公开(公告)号：US20240072125A1

公开(公告)日：2024-02-29

申请号：US17893277

申请日：2022-08-23

Applicant: Wolfspeed, Inc.

Inventor： Kyle Bothe ,  Evan Jones ,  Chris Hardiman

IPC: H01L29/40 ,  H01L21/02 ,  H01L21/04 ,  H01L21/285 ,  H01L29/16 ,  H01L29/20 ,  H01L29/45

CPC classification number: H01L29/401 ,  H01L21/0217 ,  H01L21/0485 ,  H01L21/28575 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/45 ,  H01L29/452

Abstract: A method of forming ohmic contacts on a semiconductor layer includes forming silicon ohmic contact precursors on the semiconductor layer, depositing a layer of metal on the semiconductor layer including the silicon ohmic contact precursors, reacting the layer of metal with the silicon ohmic contact precursors to form metal silicide ohmic contacts on the semiconductor layer, and selectively removing the layer of metal from the semiconductor layer without removing the metal silicide contacts from the semiconductor layer.

公开(公告)号：US20230130614A1

公开(公告)日：2023-04-27

申请号：US17508846

申请日：2021-10-22

Applicant: Wolfspeed, Inc.

Inventor： Kyle Bothe ,  Evan Jones

IPC: H01L29/45 ,  H01L29/20 ,  H01L29/778

Abstract: A transistor includes a semiconductor layer and a channel region. The transistor further includes a first doped contact region in the semiconductor layer and adjacent the channel region. The transistor further includes a first ohmic contact including an interface region comprising a first interface length between the first ohmic contact and the first doped contact region larger than a length of the interface region.

公开(公告)号：US20230078017A1

公开(公告)日：2023-03-16

申请号：US17477004

申请日：2021-09-16

Applicant: Wolfspeed, Inc.

Inventor： Evan Jones ,  Saptha Sriram ,  Kyle Bothe

IPC: H01L29/10 ,  H01L29/778 ,  H01L29/78 ,  H01L29/812

Abstract: A semiconductor device includes a substrate having an upper surface including a recess region, a semiconductor structure on the substrate, a portion of the semiconductor structure within the recess region, and a gate contact, a drain contact, and a source contact on the semiconductor structure. The recess region does not vertically overlap the drain contact or the source contact.

公开(公告)号：US12113114B2

公开(公告)日：2024-10-08

申请号：US17508846

申请日：2021-10-22

Applicant: Wolfspeed, Inc.

Inventor： Kyle Bothe ,  Evan Jones

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/45

CPC classification number: H01L29/452 ,  H01L29/2003 ,  H01L29/7786

Abstract: A transistor includes a semiconductor layer and a channel region. The transistor further includes a first doped contact region in the semiconductor layer and adjacent the channel region. The transistor further includes a first ohmic contact including an interface region comprising a first interface length between the first ohmic contact and the first doped contact region larger than a length of the interface region.

公开(公告)号：US20240313099A1

公开(公告)日：2024-09-19

申请号：US18121782

申请日：2023-03-15

Applicant: Wolfspeed, Inc.

Inventor： Kyle Bothe ,  Evan Jones ,  Daniel Etter

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/423 ,  H01L29/872

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/4232 ,  H01L29/872

Abstract: A transistor device includes a semiconductor body and a non-ohmic contact on the semiconductor body. The non-ohmic contact includes a phonon scattering layer on the semiconductor body, a protection layer on a surface of the phonon scattering layer opposite the semiconductor body, and a contact layer on a surface of the protection layer opposite the phonon scattering layer. The phonon scattering layer has a work function in a range of about 4.5 eV to about 5.7 eV and a melting point in a range of about 1550° C. to about 3200° C.

公开(公告)号：US20240194751A1

公开(公告)日：2024-06-13

申请号：US18063787

申请日：2022-12-09

Applicant: Wolfspeed, Inc.

Inventor： Kyle Bothe ,  Chris Hardiman ,  Chloe Hawes ,  Daniel Namishia ,  Evan Jones

IPC: H01L29/417 ,  H01L23/66 ,  H01L29/40

CPC classification number: H01L29/41783 ,  H01L23/66 ,  H01L29/401 ,  H01L29/7786

Abstract: A transistor device includes a semiconductor structure having an implanted region adjacent a surface thereof; and a source/drain contact including an ohmic contact portion on the implanted region of the semiconductor structure. The implanted region laterally extends beyond the ohmic contact portion by less than about 0.8 microns, e.g., by less than about 0.2 microns or such that a boundary of the implanted region is substantially aligned with an edge of the ohmic contact portion. Related fabrication methods are also discussed.

公开(公告)号：US12218202B2

公开(公告)日：2025-02-04

申请号：US17477004

申请日：2021-09-16

Applicant: Wolfspeed, Inc.

Inventor： Evan Jones ,  Saptha Sriram ,  Kyle Bothe

IPC: H01L29/778 ,  H01L29/10

Abstract: A semiconductor device includes a substrate having an upper surface including a recess region, a semiconductor structure on the substrate, a portion of the semiconductor structure within the recess region, and a gate contact, a drain contact, and a source contact on the semiconductor structure. The recess region does not vertically overlap the drain contact or the source contact.

公开(公告)号：US11616136B2

公开(公告)日：2023-03-28

申请号：US17180048

申请日：2021-02-19

Applicant: Wolfspeed, Inc.

Inventor： Kyle Bothe ,  Evan Jones ,  Dan Namishia ,  Chris Hardiman ,  Fabian Radulescu ,  Terry Alcorn ,  Scott Sheppard ,  Bruce Schmukler

IPC: H01L21/00 ,  H01L29/08 ,  H01L29/778 ,  H01L21/285 ,  H01L21/306 ,  H01L21/765 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H03F1/02 ,  H03F3/21

Abstract: A power amplifier comprising a GaN-based high electron mobility transistor (HEMT) device, wherein a power added efficiency (PAE) of the power amplifier is greater than 32% at P1DB during operation of the power amplifier between 26.5 GHz and 30.5 GHz.