摘要:
A resistive material for a bolometer, a bolometer for an infrared detector using the material, and a method of manufacturing the bolometer are provided. In the resistive material, at least one element selected from the group consisting of nitrogen (N), oxygen (O) and germanium (Ge) is included in antimony (Sb). The resistive material has superior properties such as high temperature coefficient of resistance (TCR), low resistivity, a low noise constant, and is easily formed in a thin film structure by sputtering typically used in a complementary metal-oxide semiconductor (CMOS) process, so that it can be used as a resistor for the bolometer for an uncooled infrared detector, and thus provide the infrared detector with superior temperature precision.
摘要:
In an infrared detection sensor according to the present invention, all material constituting an upper portion of a sensing electrode in a supporting arm region is removed so that a supporting arm has low thermal conductivity. As a result, thermal conductivity of the infrared sensor structure is reduced, and the infrared detection sensor has excellent sensitivity.
摘要:
In an infrared detection sensor according to the present invention, all material constituting an upper portion of a sensing electrode in a supporting arm region is removed so that a supporting arm has low thermal conductivity. As a result, thermal conductivity of the infrared sensor structure is reduced, and the infrared detection sensor has excellent sensitivity.
摘要:
A resistive material for a bolometer, a bolometer for an infrared detector using the material, and a method of manufacturing the bolometer are provided. In the resistive material, at least one element selected from the group consisting of nitrogen (N), oxygen (O) and germanium (Ge) is included in antimony (Sb). The resistive material has superior properties such as high temperature coefficient of resistance (TCR), low resistivity, a low noise constant, and is easily formed in a thin film structure by sputtering typically used in a complementary metal-oxide semiconductor (CMOS) process, so that it can be used as a resistor for the bolometer for an uncooled infrared detector, and thus provide the infrared detector with superior temperature precision.
摘要:
An infrared sensor and a method of fabricating the same are provided. The sensor includes a substrate including a reflection layer and a plurality of pad electrodes, an interdigitated sensing electrode connected to the pad electrode and formed to be spaced apart from the reflection layer by a predetermined distance and a sensing layer formed on the sensing electrode and having an opening exposing a portion in which an interdigitated region of the sensing electrode connected to one pad region is separated from the sensing electrode connected to the other pad electrode. Therefore, the sensor has an electrode in a very simple constitution, and a sensing layer divided into rectangular blocks, so that current that non-uniformly flows into the electrode can be removed. Accordingly, the sensor in which current of the sensing layer can be uniformly flown, and noise is lowered can be implemented.
摘要:
Disclosed is a sound detecting circuit which includes a sensing unit configured to generate an AC signal in response to a sound pressure level of a sound signal; an amplification unit configured to amplify the AC signal; and a bias voltage generating unit configured to generate a bias voltage to be provided to the amplification unit. The bias voltage generating unit comprises a current source configured to provide a power current; and a current-voltage converting circuit configured to convert the power current into the bias voltage and to reduce a noise due to the power current.
摘要:
The inventive concept discloses a new temperature sensor structure based on oscillator which is insensitive to a process change and improves an error rate of temperature output. The temperature sensor based on oscillator compares an oscillator circuit structure insensitive to a temperature change with an oscillator circuit structure having a frequency change in proportion to a temperature change to output a relative difference between the two oscillator circuit structures and thereby it is compensated itself. In the temperature sensor based on oscillator, a problem of performance reduction due to an external environment and a process deviation of temperature sensor is improved and an output distortion and temperature nonlinearity are effectively improved. Thus, since the temperature sensor based on oscillator has a structure of high performance, low power and low cost, it can be variously used in a detection equipment of temperature environment.
摘要:
Disclosed are a MEMS microphone and a method of manufacturing the same. The MEMS microphone includes: a substrate; a rear acoustic chamber formed inside a front surface of the substrate; a vibrating plate formed on the substrate and having an exhaust hole; a fixed electrode formed on the vibrating plate; and a fixed electrode support supported by a bottom of the rear acoustic chamber and connected to the fixed electrode through the exhaust hole.
摘要:
A method for fabricating an acoustic sensor according to an exemplary embodiment of the present disclosure includes: forming an acoustic sensor unit by forming a lower electrode on an upper portion of a substrate, forming etching holes on the lower electrode, forming a sacrifice layer on an upper portion of the lower electrode, and coupling a diaphragm to an upper portion of the sacrifice layer; coupling a lower portion of the substrate of the acoustic sensor unit to a printed circuit board on which a sound pressure input hole is formed so as to expose the lower portion of the substrate of the acoustic sensor unit to the outside through the sound pressure input hole; attaching a cover covering the acoustic sensor unit on the printed circuit board; etching the substrate of the acoustic sensor unit to form an acoustic chamber; and removing the sacrifice layer.
摘要:
Provided is an acoustic sensor. The acoustic sensor includes: a substrate including sidewall portions and a bottom portion extending from a bottom of the sidewall portions; a lower electrode fixed at the substrate and including a concave portion and a convex portion, the concave portion including a first hole on a middle region of the bottom, the convex portion including a second hole on an edge region of the bottom; diaphragms facing the concave portion of the lower electrode, with a vibration space therebetween; diaphragm supporters provided on the lower electrode at a side of the diaphragm and having a top surface having the same height as the diaphragm; and an acoustic chamber provided in a space between the bottom portion and the sidewall portions below the lower electrode.