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    Multilayer-structured bolometer and method of fabricating the same
    2.
    发明授权
    Multilayer-structured bolometer and method of fabricating the same 失效
    多层结构测辐射热计及其制造方法

    公开(公告)号：US07667202B2

    公开(公告)日：2010-02-23

    申请号：US12182456

    申请日：2008-07-30

    申请人： Sang Hoon Cheon ,  Ho Jun Ryu ,  Woo Seok Yang ,  Seong Mok Cho ,  Byoung Gon Yu ,  Chang Auck Choi

    发明人： Sang Hoon Cheon ,  Ho Jun Ryu ,  Woo Seok Yang ,  Seong Mok Cho ,  Byoung Gon Yu ,  Chang Auck Choi

    IPC分类号： G01J5/20

    CPC分类号： G01J5/20 ,  G01J5/02 ,  G01J5/023

    摘要： Provided are a multilayer-structured bolometer and a method of fabricating the same. In the multilayer-structured bolometer, the number of support arms supporting the body of a sensor structure is reduced to one, and two electrodes are formed on the one support arm. Thus, the sensor structure is electrically connected with a substrate through the only one support arm. According to the multilayer-structured bolometer and method of fabricating the bolometer, the thermal conductivity of the sensor structure is considerably reduced to remarkably improve sensitivity to temperature, and also the pixel size of the bolometer is reduced to obtain high-resolution thermal images. In addition, the multilayer-structured bolometer can have a high fill-factor due to a sufficiently large infrared-absorbing layer, and thus can improve infrared absorbance.

    摘要翻译： 提供一种多层结构的测辐射热计及其制造方法。 在多层结构的测辐射热计中，支撑传感器结构的主体的支撑臂的数量减少到一个，并且在一个支撑臂上形成两个电极。 因此，传感器结构通过仅一个支撑臂与基板电连接。 根据多层结构的测辐射热计和制造测辐射热计的方法，传感器结构的导热性显着降低，显着提高了对温度的敏感性，还减小了测辐射热计的像素尺寸以获得高分辨率的热图像。 此外，由于具有足够大的红外线吸收层，多层结构的测辐射热计可以具有高的填充因子，因此可以提高红外吸收。

    Resistive material for bolometer, bolometer for infrared detector using the material, and method of manufacturing the bolometer
    4.
    发明授权
    Resistive material for bolometer, bolometer for infrared detector using the material, and method of manufacturing the bolometer 有权
    辐射热测量仪的电阻材料，使用该材料的红外探测器的测辐射热仪，以及制造测辐射热计的方法

    公开(公告)号：US08143579B2

    公开(公告)日：2012-03-27

    申请号：US12859466

    申请日：2010-08-19

    申请人： Woo Seok Yang ,  Sang Hoon Cheon ,  Seong Mok Cho ,  Ho Jun Ryu ,  Chang Auck Choi

    发明人： Woo Seok Yang ,  Sang Hoon Cheon ,  Seong Mok Cho ,  Ho Jun Ryu ,  Chang Auck Choi

    IPC分类号： G01J5/20

    CPC分类号： G01J5/04 ,  G01J5/046

    摘要： A resistive material for a bolometer, a bolometer for an infrared detector using the material, and a method of manufacturing the bolometer are provided. In the resistive material, at least one element selected from the group consisting of nitrogen (N), oxygen (O) and germanium (Ge) is included in antimony (Sb). The resistive material has superior properties such as high temperature coefficient of resistance (TCR), low resistivity, a low noise constant, and is easily formed in a thin film structure by sputtering typically used in a complementary metal-oxide semiconductor (CMOS) process, so that it can be used as a resistor for the bolometer for an uncooled infrared detector, and thus provide the infrared detector with superior temperature precision.

    摘要翻译： 提供了用于测辐射热力计的电阻材料，用于使用该材料的红外探测器的测辐射热计，以及制造测辐射热计的方法。 在电阻材料中，选自氮（N），氧（O）和锗（Ge）中的至少一种元素包括在锑（Sb）中。 电阻材料具有优异的性能，例如高温电阻系数（TCR），低电阻率，低噪声常数，并且易于通过通常用于互补金属氧化物半导体（CMOS）工艺中的溅射在薄膜结构中形成， 因此它可以用作非制冷红外探测器的辐射热计的电阻器，从而为红外检测器提供出色的温度精度。

    BOLOMETER AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    BOLOMETER AND METHOD OF MANUFACTURING THE SAME 审中-公开
    测量仪及其制造方法

    公开(公告)号：US20080135758A1

    公开(公告)日：2008-06-12

    申请号：US11776945

    申请日：2007-07-12

    申请人： Woo Seok YANG ,  Seong Mok Cho ,  Hojun Ryu ,  Byoung Gon Yu

    发明人： Woo Seok YANG ,  Seong Mok Cho ,  Hojun Ryu ,  Byoung Gon Yu

    IPC分类号： G01J5/00 ,  H01L21/00 ,  H01L27/14

    CPC分类号： H01L27/14669 ,  G01J5/20 ,  H01L27/14683

    摘要： Provided are a bolometer and a method of manufacturing the bolometer. The bolometer includes: a semiconductor substrate comprising a detection circuit; a reflective layer disposed in an area of a surface of the semiconductor substrate; metal pads disposed on the surface of the semiconductor substrate beside both sides of the reflective layer to keep predetermined distances from the both sides of the reflective layer; and a sensor structure forming a space corresponding to quarter of an infrared wavelength (λ/4) from a surface of the reflective layer and positioned above the semiconductor substrate, wherein the sensor structure includes: a body including a polycrystalline resistive layer formed of one of doped Si and Si1-xGex (where x=0.2˜0.5) to be positioned above the reflective layer; and support arms positioned outside the body to be electrically connected to the metal pads.

    摘要翻译： 提供测辐射热度计和制造测辐射热计的方法。 测辐射热计包括：包括检测电路的半导体衬底; 设置在所述半导体衬底的表面的区域中的反射层; 设置在半导体衬底的表面上的金属焊盘，位于反射层的两侧，以保持与反射层两侧的预定距离; 以及传感器结构，其从所述反射层的表面形成对应于红外波长（λ/ 4）的四分之一并位于所述半导体衬底上方的空间，其中所述传感器结构包括：主体，包括由以下之一形成的多晶电阻层： 掺杂的Si和Si 1-x Ge x x（其中x = 0.2〜0.5）位于反射层上方; 以及位于主体外部的支撑臂，以电连接到金属垫。

    Infrared sensor and method of fabricating the same
    8.
    发明授权
    Infrared sensor and method of fabricating the same 失效
    红外线传感器及其制造方法

    公开(公告)号：US08053730B2

    公开(公告)日：2011-11-08

    申请号：US12511251

    申请日：2009-07-29

    申请人： Seong Mok Cho ,  Ho Jun Ryu ,  Woo Seok Yang ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auk Choi

    发明人： Seong Mok Cho ,  Ho Jun Ryu ,  Woo Seok Yang ,  Sang Hoon Cheon ,  Byoung Gon Yu ,  Chang Auk Choi

    IPC分类号： G01J5/02

    CPC分类号： G01J5/20 ,  G01J5/02 ,  G01J5/023 ,  G01J5/10 ,  H01L31/022408 ,  H01L31/108

    摘要： An infrared sensor and a method of fabricating the same are provided. The sensor includes a substrate including a reflection layer and a plurality of pad electrodes, an interdigitated sensing electrode connected to the pad electrode and formed to be spaced apart from the reflection layer by a predetermined distance and a sensing layer formed on the sensing electrode and having an opening exposing a portion in which an interdigitated region of the sensing electrode connected to one pad region is separated from the sensing electrode connected to the other pad electrode. Therefore, the sensor has an electrode in a very simple constitution, and a sensing layer divided into rectangular blocks, so that current that non-uniformly flows into the electrode can be removed. Accordingly, the sensor in which current of the sensing layer can be uniformly flown, and noise is lowered can be implemented.

    摘要翻译： 提供了一种红外线传感器及其制造方法。 该传感器包括：基板，包括反射层和多个焊盘电极;连接到焊盘电极并形成为与反射层隔开预定距离的叉指感测电极，以及形成在感测电极上的感测层， 连接到一个焊盘区域的感测电极的交错区域与连接到另一个焊盘电极的感测电极分离的部分露出。 因此，传感器具有非常简单的结构的电极和分为矩形块的感测层，从而可以去除不均匀地流入电极的电流。 因此，可以实现感测层的电流可以均匀地流动并且噪声降低的传感器。

    RESISTIVE MATERIAL FOR BOLOMETER, BOLOMETER FOR INFRARED DETECTOR USING THE MATERIAL, AND METHOD OF MANUFACTURING THE BOLOMETER
    10.
    发明申请
    RESISTIVE MATERIAL FOR BOLOMETER, BOLOMETER FOR INFRARED DETECTOR USING THE MATERIAL, AND METHOD OF MANUFACTURING THE BOLOMETER 有权
    用于使用该材料的红外探测器的玻璃体，BOLOMETER的电阻材料及其制造方法

    公开(公告)号：US20110049366A1

    公开(公告)日：2011-03-03

    申请号：US12859466

    申请日：2010-08-19

    申请人： Woo Seok Yang ,  Sang Hoon Cheon ,  Seong Mok Cho ,  Ho Jun Ryu ,  Chang Auck Choi

    发明人： Woo Seok Yang ,  Sang Hoon Cheon ,  Seong Mok Cho ,  Ho Jun Ryu ,  Chang Auck Choi

    IPC分类号： H01L31/09 ,  H01L31/18 ,  C09K3/00

    CPC分类号： G01J5/04 ,  G01J5/046

    摘要： A resistive material for a bolometer, a bolometer for an infrared detector using the material, and a method of manufacturing the bolometer are provided. In the resistive material, at least one element selected from the group consisting of nitrogen (N), oxygen (O) and germanium (Ge) is included in antimony (Sb). The resistive material has superior properties such as high temperature coefficient of resistance (TCR), low resistivity, a low noise constant, and is easily formed in a thin film structure by sputtering typically used in a complementary metal-oxide semiconductor (CMOS) process, so that it can be used as a resistor for the bolometer for an uncooled infrared detector, and thus provide the infrared detector with superior temperature precision.

    摘要翻译： 提供了用于测辐射热力计的电阻材料，用于使用该材料的红外探测器的测辐射热计，以及制造测辐射热计的方法。 在电阻材料中，选自氮（N），氧（O）和锗（Ge）中的至少一种元素包括在锑（Sb）中。 电阻材料具有优异的性能，例如高温电阻系数（TCR），低电阻率，低噪声常数，并且易于通过通常用于互补金属氧化物半导体（CMOS）工艺中的溅射在薄膜结构中形成， 因此它可以用作非制冷红外探测器的辐射热计的电阻器，从而为红外检测器提供出色的温度精度。