公开(公告)号：US10032947B2

公开(公告)日：2018-07-24

申请号：US15083742

申请日：2016-03-29

Applicant: X Development LLC

Inventor： Martin F. Schubert

IPC: H01L31/044 ,  H01L31/055 ,  G02B19/00 ,  H01S3/0915 ,  H01S3/16 ,  H01L31/054 ,  H01S3/063 ,  H01S3/093 ,  H01S3/094 ,  H01S3/06

Abstract: A light concentrator includes a luminescent concentrator and a gain medium. The luminescent concentrator includes a semiconductor material and the semiconductor material absorbs first photons. The first photons have energy greater than or equal to a threshold energy, and the semiconductor material emits second photons through a spontaneous emission process where the second photons have less energy than the first photons. The gain medium is optically coupled to the luminescent concentrator to receive the second photons. The gain medium absorbs the second photons, and in response to absorbing the second photons, the gain medium emits third photons through a stimulated emission process. The third photons have less energy than the second photons.

公开(公告)号：US09979480B1

公开(公告)日：2018-05-22

申请号：US15159014

申请日：2016-05-19

Applicant: X Development LLC

Inventor： Martin F. Schubert

IPC: H04B10/25 ,  H04B10/40

CPC classification number: H04B10/2503 ,  H04B10/2504 ,  H04B10/40

Abstract: A system of optical power and data transfer includes an optical emitter to emit a data signal and a power signal along a common path. The system also includes a demultiplexer coupled to receive the data signal and the power signal, where the demultiplexer includes a first output coupled to output the data signal and a second output coupled to output the power signal. An optical receiver is optically coupled to the first output to receive the data signal and convert the data signal into electrical data. A power converter is optically coupled to the second output to receive the power signal and to convert the power signal into electrical power to power operation of other circuitry.

公开(公告)号：US20180047872A1

公开(公告)日：2018-02-15

申请号：US15726094

申请日：2017-10-05

Applicant: X Development LLC

Inventor： Michael Grundmann ,  Martin F. Schubert

IPC: H01L33/14 ,  H01L33/30

CPC classification number: H01L33/145 ,  H01L33/30

Abstract: A method for fabricating a semiconductor device includes generating a wafer by generating an N-type semiconductor layer and an active region on the N-type semiconductor layer. The N-type semiconductor layer is located on a first side of the active layer. One or more oxidizing layers are generated along with a P-type semiconductor layer generated on a second, opposite side of the active layer. The wafer is etched to expose a surface of each oxidizing layer. Oxidation of a first region of each oxidizing layer is allowed, where a second region of each oxidizing layer remains non-oxidized.

公开(公告)号：US20170288087A1

公开(公告)日：2017-10-05

申请号：US15083919

申请日：2016-03-29

Applicant: X Development LLC

Inventor： Martin F. Schubert ,  Jason D. Thompson ,  Michael Grundmann

IPC: H01L33/00 ,  H01L33/32

CPC classification number: H01L33/007 ,  H01L21/7806 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/32

Abstract: Embodiments regard micro-size devices formed by etch of sacrificial epitaxial layers. An embodiment of a method includes forming a plurality of epitaxial layers on a sapphire crystal, wherein the epitaxial layers include a buffer layer on the sapphire crystal, a sacrificial layer above the buffer layer, and one or more device layers above the sacrificial layer; etching to singulate the semiconductor devices, the etching being through the one or more device layers and wholly or partially through the sacrificial layer; electrochemical etching of the sacrificial layer; and lift-off of one or more semiconductor devices from the buffer layer.

公开(公告)号：US20170288079A1

公开(公告)日：2017-10-05

申请号：US15083742

申请日：2016-03-29

Applicant: X Development LLC

Inventor： Martin F. Schubert

IPC: H01L31/055

CPC classification number: H01L31/055 ,  G02B19/00 ,  H01L31/0547 ,  H01S3/0612 ,  H01S3/063 ,  H01S3/0915 ,  H01S3/093 ,  H01S3/09403 ,  H01S3/169 ,  Y02E10/50 ,  Y02E10/52

Abstract: A light concentrator includes a luminescent concentrator and a gain medium. The luminescent concentrator includes a semiconductor material and the semiconductor material absorbs first photons. The first photons have energy greater than or equal to a threshold energy, and the semiconductor material emits second photons through a spontaneous emission process where the second photons have less energy than the first photons. The gain medium is optically coupled to the luminescent concentrator to receive the second photons. The gain medium absorbs the second photons, and in response to absorbing the second photons, the gain medium emits third photons through a stimulated emission process. The third photons have less energy than the second photons.