公开(公告)号：US08795461B2

公开(公告)日：2014-08-05

申请号：US12583429

申请日：2009-08-20

申请人： Kai-Li Jiang ,  Chen Feng ,  Lin Xiao ,  Zhuo Chen ,  Liang Liu ,  Shou-Shan Fan ,  Qun-Qing Li ,  Li Qian ,  Kai Liu ,  Yang Wei

发明人： Kai-Li Jiang ,  Chen Feng ,  Lin Xiao ,  Zhuo Chen ,  Liang Liu ,  Shou-Shan Fan ,  Qun-Qing Li ,  Li Qian ,  Kai Liu ,  Yang Wei

IPC分类号： B29C65/00 ,  B65C9/06 ,  B28B11/08

CPC分类号： B29C55/04 ,  B29K2105/162 ,  D02J1/22

摘要： A method for stretching a carbon nanotube film includes providing one or more carbon nanotube films and one or more elastic supporters, attaching at least one portion of the one or more carbon nanotube films to the one or more elastic supporters, and stretching the elastic supporters.

摘要翻译： 拉伸碳纳米管膜的方法包括提供一个或多个碳纳米管膜和一个或多个弹性支撑体，将一个或多个碳纳米管膜的至少一部分附着到一个或多个弹性支撑体上，并拉伸弹性支撑体。

公开(公告)号：US08298623B2

公开(公告)日：2012-10-30

申请号：US12592497

申请日：2009-11-25

申请人： Jia-Ping Wang ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Jia-Ping Wang ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： B05D3/04

CPC分类号： B01J35/002 ,  B01J21/185 ,  B01J35/0013 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/174 ,  Y10T428/25 ,  Y10T428/2927

摘要： A method for fabricating a composite material includes providing a free-standing carbon nanotube structure having a plurality of carbon nanotubes, introducing at least two reacting materials into the carbon nanotube structure to form a reacting layer, activating the reacting materials to grow a plurality of nanoparticles, wherein the nanoparticles are spaced from each other and coated on a surface of each of the carbon nanotubes of the carbon nanotube structure.

摘要翻译： 一种制备复合材料的方法包括提供具有多个碳纳米管的独立碳纳米管结构，将至少两个反应材料引入到碳纳米管结构中以形成反应层，活化反应材料以生长多个纳米颗粒 ，其中所述纳米颗粒彼此间隔开并涂覆在所述碳纳米管结构的每个碳纳米管的表面上。

公开(公告)号：US08053291B2

公开(公告)日：2011-11-08

申请号：US12384310

申请日：2009-04-02

申请人： Chang-Hong Liu ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Chang-Hong Liu ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558 ,  Y10S977/938

摘要： A method for making a thin film transistor, the method includes the steps of: providing a plurality of carbon nanotubes and an insulating substrate; flocculating the carbon nanotubes to acquire a carbon nanotube structure, applying the carbon nanotube structure on the insulating substrate; forming a source electrode, a drain electrode, and a gate electrode; and covering the carbon nanotube structure with an insulating layer. The source electrode and the drain electrode are connected to the carbon nanotube structure, the gate electrode is electrically insulated from the carbon nanotube structure by the insulating layer.

摘要翻译： 一种制造薄膜晶体管的方法，所述方法包括以下步骤：提供多个碳纳米管和绝缘基板; 絮凝碳纳米管以获得碳纳米管结构，将碳纳米管结构施加在绝缘基板上; 形成源电极，漏电极和栅电极; 并用绝缘层覆盖碳纳米管结构。 源电极和漏极连接到碳纳米管结构，栅电极通过绝缘层与碳纳米管结构电绝缘。

公开(公告)号：US07973305B2

公开(公告)日：2011-07-05

申请号：US12384299

申请日：2009-04-02

申请人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01L29/06

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0562

摘要： A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The semiconducting layer comprises at least two stacked carbon nanotube films, and each carbon nanotube film comprises a plurality of carbon nanotubes primarily oriented along a same direction, and the carbon nanotubes in at least two adjacent carbon nanotube films are aligned along different directions.

摘要翻译： 薄膜晶体管包括源电极，漏电极，半导体层和栅电极。 漏电极与源电极间隔开。 半导体层连接到源电极和漏电极。 栅电极通过绝缘层与源电极，漏电极和半导体层绝缘。 半导体层包括至少两个层叠的碳纳米管膜，并且每个碳纳米管膜包括主要沿相同方向定向的多个碳纳米管，并且至少两个相邻的碳纳米管膜中的碳纳米管沿着不同的方向排列。

公开(公告)号：US20100086150A1

公开(公告)日：2010-04-08

申请号：US12583388

申请日：2009-08-20

申请人： Kai-Li Jiang ,  Chen Feng ,  Lin Xiao ,  Zhuo Chen ,  Liang Liu ,  Shou-Shan Fan ,  Qun-Qing Li ,  Li Qian

发明人： Kai-Li Jiang ,  Chen Feng ,  Lin Xiao ,  Zhuo Chen ,  Liang Liu ,  Shou-Shan Fan ,  Qun-Qing Li ,  Li Qian

IPC分类号： H04R25/00

CPC分类号： H04R23/002

摘要： A flexible thermoacoustic device includes a soft supporter and a sound wave generator. The sound wave generator is located on a surface of the softer supporter. The sound wave generator includes a carbon nanotube structure. The carbon nanotube structure includes a plurality of carbon nanotubes combined by van der Waals attractive force.

摘要翻译： 柔性热声装置包括软支架和声波发生器。 声波发生器位于较软的支架的表面上。 声波发生器包括碳纳米管结构。 碳纳米管结构包括通过范德华力吸引力组合的多个碳纳米管。

公开(公告)号：US07638112B2

公开(公告)日：2009-12-29

申请号：US12291302

申请日：2008-11-06

申请人： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： C01F7/00 ,  C23C14/00

CPC分类号： C01G9/00 ,  B82Y30/00 ,  C01P2004/64

摘要： A method for making zinc aluminate nano-material, the method comprises the following steps. Firstly, providing a growing substrate and a growing device, and the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of reacting materials into the reaction room, and the reacting materials comprising zinc and aluminum. Thirdly, introducing an oxygen-containing gas into the reaction room. Lastly, heating the reaction room to a temperature of 660˜1100° C.

公开(公告)号：US20090298239A1

公开(公告)日：2009-12-03

申请号：US12384310

申请日：2009-04-02

申请人： Chang-Hong Liu ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Chang-Hong Liu ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01L21/336

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558 ,  Y10S977/938

摘要： A method for making a thin film transistor, the method includes the steps of: providing a plurality of carbon nanotubes and an insulating substrate; flocculating the carbon nanotubes to acquire a carbon nanotube structure, applying the carbon nanotube structure on the insulating substrate; forming a source electrode, a drain electrode, and a gate electrode; and covering the carbon nanotube structure with an insulating layer. The source electrode and the drain electrode are connected to the carbon nanotube structure, the gate electrode is electrically insulated from the carbon nanotube structure by the insulating layer.

摘要翻译： 一种制造薄膜晶体管的方法，所述方法包括以下步骤：提供多个碳纳米管和绝缘基板; 絮凝碳纳米管以获得碳纳米管结构，将碳纳米管结构施加在绝缘基板上; 形成源电极，漏电极和栅电极; 并用绝缘层覆盖碳纳米管结构。 源电极和漏极连接到碳纳米管结构，栅电极通过绝缘层与碳纳米管结构电绝缘。

公开(公告)号：US20090286362A1

公开(公告)日：2009-11-19

申请号：US12384245

申请日：2009-04-02

申请人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01L21/336

CPC分类号： H01L51/102 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545 ,  Y10S977/742 ,  Y10S977/75 ,  Y10S977/842 ,  Y10S977/932

摘要： A method for making a thin film transistor, the method comprising the steps of: providing a growing substrate; applying a catalyst layer on the growing substrate; heating the growing substrate with the catalyst layer in a furnace with a protective gas therein, supplying a carbon source gas and a carrier gas at a ratio ranging from 100:1 to 100:10, and growing a carbon nanotube layer on the growing substrate; forming a source electrode, a drain electrode, and a gate electrode; and covering the carbon nanotube layer with an insulating layer, wherein the source electrode and the drain electrode are electrically connected to the single-walled carbon nanotube layer, the gate electrode is opposite to and electrically insulated from the single-walled carbon nanotube layer.

摘要翻译： 一种制造薄膜晶体管的方法，所述方法包括以下步骤：提供生长衬底; 在生长衬底上施加催化剂层; 在其中具有保护气体的炉中用催化剂层加热生长衬底，以100:1至100:10的比例供应碳源气体和载气，并在生长衬底上生长碳纳米管层; 形成源电极，漏电极和栅电极; 并且用绝缘层覆盖碳纳米管层，其中源电极和漏电极电连接到单壁碳纳米管层，栅电极与单壁碳纳米管层相对并与其电绝缘。

公开(公告)号：US20090260688A1

公开(公告)日：2009-10-22

申请号：US12339364

申请日：2008-12-19

申请人： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： H01L31/00

CPC分类号： H01L31/022466 ,  H01L31/0745 ,  H01L31/1884 ,  Y02E10/50 ,  Y10S977/742 ,  Y10S977/932 ,  Y10S977/948

摘要： A photovoltaic device includes a silicon substrate, an intrinsic layer, a carbon nanotube structure and a first electrode. The silicon substrate has a front surface and a rear surface. The intrinsic layer is disposed on the front surface of the silicon substrate. The carbon nanotube structure is disposed on the intrinsic layer. The first electrode is disposed on the rear surface of the silicon substrate.

摘要翻译： 光电器件包括硅衬底，本征层，碳纳米管结构和第一电极。 硅衬底具有前表面和后表面。 本征层设置在硅衬底的前表面上。 碳纳米管结构设置在本征层上。 第一电极设置在硅衬底的后表面上。

公开(公告)号：US20090257947A1

公开(公告)日：2009-10-15

申请号：US12291302

申请日：2008-11-06

申请人： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

发明人： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

IPC分类号： C01F7/02 ,  C23C16/00 ,  C23C14/00

CPC分类号： C01G9/00 ,  B82Y30/00 ,  C01P2004/64

摘要： A method for making zinc aluminate nano-material, the method comprises the following steps. Firstly, providing a growing substrate and a growing device, and the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of reacting materials into the reaction room, and the reacting materials comprising zinc and aluminum. Thirdly, introducing an oxygen-containing gas into the reaction room. Lastly, heating the reaction room to a temperature of 660˜1100° C.

摘要翻译： 一种制备铝酸锌纳米材料的方法，该方法包括以下步骤。 首先，提供不断增长的衬底和生长装置，并且生长装置包括加热装置和反应室。 其次，将生长的基材和一定数量的反应材料放置在反应室中，以及包含锌和铝的反应材料。 第三，将含氧气体引入反应室。 最后，将反应室加热至660〜1100℃