公开(公告)号：US20110205823A1

公开(公告)日：2011-08-25

申请号：US12708699

申请日：2010-02-19

申请人： Gerrit Jan Hemink ,  Shinji Sato

发明人： Gerrit Jan Hemink ,  Shinji Sato

IPC分类号： G11C7/04

CPC分类号： G11C16/26 ,  G11C7/04 ,  G11C11/5642

摘要： Data is programmed into and read from a set of target memory cells. When reading the data, temperature compensation is provided. The temperature compensation is based on temperature information and the state of one or more neighbor memory cells. In one embodiment, when data is read from set of target memory cells, the system senses the current temperature and determines the differences in temperature between the current temperature and the temperature at the time the data was programmed. If the difference in temperature is greater than a threshold, then the process of reading the data includes providing temperature compensation based on temperature information and neighbor state information. In one alternative, the decision to provide the temperature compensation can be triggered by conditions other than a temperature differential.

摘要翻译： 数据被编程到一组目标存储器单元中并从其读取。 读取数据时，提供温度补偿。 温度补偿基于温度信息和一个或多个相邻存储单元的状态。 在一个实施例中，当从目标存储器单元的集合读取数据时，系统感测当前温度并确定当前温度与数据编程时的温度之间的温度差。 如果温度差大于阈值，则读取数据的过程包括基于温度信息和邻近状态信息提供温度补偿。 在一个替代方案中，提供温度补偿的决定可以由温差以外的条件触发。

公开(公告)号：US07902031B2

公开(公告)日：2011-03-08

申请号：US12835468

申请日：2010-07-13

申请人： Gerrit Jan Hemink ,  Shinji Sato

发明人： Gerrit Jan Hemink ,  Shinji Sato

IPC分类号： H01L21/336

CPC分类号： H01L27/11521 ,  G11C16/0483 ,  G11C16/10 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/66825 ,  H01L29/7885

摘要： A method for creating NAND flash memory. Source implantations are performed at a first implantation angle to areas between stacked gate structures of a NAND string. Drain implantations are performed at a second implantation angle to areas between the stacked gate structures. The implantations can dope a source line area while not doping a bit line contact area, and providing an additional implantation for the bit line contact area, or dope the bit line contact area while not doping the source line area, followed by an additional implantation for the source line area, or dope neither the source line area nor the bit line contact area, followed by additional implantations for the source line area and the bit line contact area.

摘要翻译： 一种用于创建NAND闪存的方法。 以与NAND串的堆叠栅极结构之间的区域的第一注入角度执行源注入。 排水注入以与叠置的栅极结构之间的区域的第二注入角度进行。 注入可以掺杂源极区域而不掺杂位线接触区域，并且为位线接触区域提供额外的注入，或掺杂位线接触区域而不掺杂源极区域，然后进行额外的注入 源极区域，或者既不影响源极线区域也不掺杂位线接触区域，随后对源极线区域和位线接触区域进行额外的注入。

公开(公告)号：US07534690B2

公开(公告)日：2009-05-19

申请号：US11469281

申请日：2006-08-31

申请人： Gerrit Jan Hemink ,  Shinji Sato

发明人： Gerrit Jan Hemink ,  Shinji Sato

IPC分类号： H01L21/336

CPC分类号： H01L27/11521 ,  G11C16/0483 ,  G11C16/10 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/66825 ,  H01L29/7885

摘要： Stacked gate structures for a NAND string are created on a substrate. Source implantations are performed at a first implantation angle to areas between the stacked gate structures. Drain implantations are performed at a second implantation angle to areas between the stacked gate structures. The drain implantations create lower doped regions of a first conductivity type in the substrate on drain sides of the stacked gate structures. The source implantations create higher doped regions of the first conductivity type in the substrate on source sides of the stacked gate structures.

摘要翻译： 在衬底上产生用于NAND串的堆叠栅极结构。 以与堆叠的栅极结构之间的区域的第一注入角度进行源植入。 排水注入以与叠置的栅极结构之间的区域的第二注入角度进行。 漏极注入在堆叠栅极结构的漏极侧的衬底中产生第一导电类型的较低掺杂区域。 源极注入在层叠栅极结构的源极侧的衬底中产生第一导电类型的较高掺杂区域。

公开(公告)号：US07294882B2

公开(公告)日：2007-11-13

申请号：US10952689

申请日：2004-09-28

申请人： Gerrit Jan Hemink ,  Shinji Sato

发明人： Gerrit Jan Hemink ,  Shinji Sato

IPC分类号： H01L29/788

CPC分类号： H01L27/11521 ,  G11C16/0483 ,  G11C16/10 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/66825 ,  H01L29/7885

摘要： Stacked gate structures for a NAND string are created on a substrate. Source implantations are performed at a first implantation angle to areas between the stacked gate structures. Drain implantations are performed at a second implantation angle to areas between the stacked gate structures. The drain implantations create lower doped regions of a first conductivity type in the substrate on drain sides of the stacked gate structures. The source implantations create higher doped regions of the first conductivity type in the substrate on source sides of the stacked gate structures.

摘要翻译： 在衬底上产生用于NAND串的堆叠栅极结构。 以与堆叠的栅极结构之间的区域的第一注入角度进行源植入。 排水注入以与叠置的栅极结构之间的区域的第二注入角度进行。 漏极注入在堆叠栅极结构的漏极侧的衬底中产生第一导电类型的较低掺杂区域。 源极注入在层叠栅极结构的源极侧的衬底中产生第一导电类型的较高掺杂区域。

公开(公告)号：US09036438B2

公开(公告)日：2015-05-19

申请号：US13486305

申请日：2012-06-01

申请人： Gerrit Jan Hemink ,  Shinji Sato

发明人： Gerrit Jan Hemink ,  Shinji Sato

IPC分类号： G11C7/04 ,  G11C11/56

CPC分类号： G11C16/26 ,  G11C7/04 ,  G11C11/5642

摘要： Data is programmed into and read from a set of target memory cells. When reading the data, temperature compensation is provided. The temperature compensation is based on temperature information and the state of one or more neighbor memory cells. In one embodiment, when data is read from set of target memory cells, the system senses the current temperature and determines the differences in temperature between the current temperature and the temperature at the time the data was programmed. If the difference in temperature is greater than a threshold, then the process of reading the data includes providing temperature compensation based on temperature information and neighbor state information. In one alternative, the decision to provide the temperature compensation can be triggered by conditions other than a temperature differential.

摘要翻译： 数据被编程到一组目标存储器单元中并从其读取。 读取数据时，提供温度补偿。 温度补偿基于温度信息和一个或多个相邻存储单元的状态。 在一个实施例中，当从目标存储器单元的集合读取数据时，系统感测当前温度并确定当前温度与数据编程时的温度之间的温度差。 如果温度差大于阈值，则读取数据的过程包括基于温度信息和邻近状态信息提供温度补偿。 在一个替代方案中，提供温度补偿的决定可以由温差以外的条件触发。

公开(公告)号：US08213255B2

公开(公告)日：2012-07-03

申请号：US12708699

申请日：2010-02-19

申请人： Gerrit Jan Hemink ,  Shinji Sato

发明人： Gerrit Jan Hemink ,  Shinji Sato

IPC分类号： G11C7/04

CPC分类号： G11C16/26 ,  G11C7/04 ,  G11C11/5642

摘要： Data is programmed into and read from a set of target memory cells. When reading the data, temperature compensation is provided. The temperature compensation is based on temperature information and the state of one or more neighbor memory cells. In one embodiment, when data is read from set of target memory cells, the system senses the current temperature and determines the differences in temperature between the current temperature and the temperature at the time the data was programmed. If the difference in temperature is greater than a threshold, then the process of reading the data includes providing temperature compensation based on temperature information and neighbor state information. In one alternative, the decision to provide the temperature compensation can be triggered by conditions other than a temperature differential.

摘要翻译： 数据被编程到一组目标存储器单元中并从其读取。 读取数据时，提供温度补偿。 温度补偿基于温度信息和一个或多个相邻存储单元的状态。 在一个实施例中，当从目标存储器单元的集合读取数据时，系统感测当前温度并确定当前温度与数据编程时的温度之间的温度差。 如果温度差大于阈值，则读取数据的过程包括基于温度信息和邻近状态信息提供温度补偿。 在一个替代方案中，提供温度补偿的决定可以由温差以外的条件触发。

公开(公告)号：US08163622B2

公开(公告)日：2012-04-24

申请号：US13024663

申请日：2011-02-10

申请人： Gerrit Jan Hemink ,  Shinji Sato

发明人： Gerrit Jan Hemink ,  Shinji Sato

IPC分类号： H01L21/336

CPC分类号： H01L27/11521 ,  G11C16/0483 ,  G11C16/10 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/66825 ,  H01L29/7885

摘要： A method for creating NAND flash memory. Source implantations are performed at a first implantation angle to areas between stacked gate structures of a NAND string. Drain implantations are performed at a second implantation angle to areas between the stacked gate structures. The source implantation can include n-type and p-type materials implanted under different angles, and the drain implantation can include n-type and p-type materials implanted under different angles. Or, the source implantation can include multiple n-type implantations under different angles, and the drain implantation can include multiple n-type implantations under different angles.

摘要翻译： 一种用于创建NAND闪存的方法。 以与NAND串的堆叠栅极结构之间的区域的第一注入角度执行源注入。 排水注入以与叠置的栅极结构之间的区域的第二注入角度进行。 源植入可以包括以不同角度注入的n型和p型材料，并且漏极注入可以包括以不同角度注入的n型和p型材料。 或者，源植入可以包括在不同角度下的多个n型注入，并且漏极注入可以包括在不同角度下的多个n型注入。

公开(公告)号：US11666759B2

公开(公告)日：2023-06-06

申请号：US17069193

申请日：2020-10-13

申请人： Shinji Sato ,  Sukchan Kim ,  Taishi Watanabe ,  Yuki Mitani ,  Yuki Miyano ,  Shigenori Kawabata ,  Toru Sasaki

发明人： Shinji Sato ,  Sukchan Kim ,  Taishi Watanabe ,  Yuki Mitani ,  Yuki Miyano ,  Shigenori Kawabata ,  Toru Sasaki

IPC分类号： A61N1/36

CPC分类号： A61N1/36031 ,  A61N1/36034

摘要： A nerve stimulating apparatus includes a plurality of stimulating units configured to respectively apply stimuli to a plurality of nerve regions branching from a particular nerve region of a living body, and a stimulation timing controller configured to set generating timings of respectively generating the stimuli at the plurality of stimulating units. The stimulation timing controller sets the generating timings of generating the stimuli at the plurality of stimulating units based on response results of the particular nerve region, the response results being obtained in response to the stimuli that are respectively generated at the plurality of stimulating units and that are respectively applied to the plurality of nerve regions, and the response results being measured by a biometric information measuring apparatus that measures biometric information.

公开(公告)号：US08896806B2

公开(公告)日：2014-11-25

申请号：US12644703

申请日：2009-12-22

申请人： Shinji Sato

发明人： Shinji Sato

IPC分类号： G03B27/52

CPC分类号： G03F7/70341 ,  G03F7/70916

摘要： An exposure apparatus that exposes a substrate includes: an optical system that includes an emission surface from which an exposure light is emitted; a first surface that is disposed in at least a part of a surrounding of an optical path of the exposure light emitted from the emission surface; a second surface that is disposed in at least a part of a surrounding of the first surface and at a position lower than the first surface; a space portion into which a liquid can flow via a first aperture between the first surface and the second surface and which is opened to the atmosphere via a second aperture different from the first aperture; and a first recovery portion that recovers at least a part of the liquid flowing into the space portion. Here, the emission surface, the first surface, and the second surface are opposed to the surface of the substrate in at least a part of the exposure of the substrate, and the substrate is exposed with the exposure light from the emission surface via the liquid between the emission surface and the surface of the substrate.

摘要翻译： 曝光基板的曝光装置包括：包括发射曝光光的发射面的光学系统; 第一表面，其设置在从所述发射表面发射的所述曝光光的光路的周围的至少一部分中; 第二表面，其设置在所述第一表面的周围的至少一部分中并且位于比所述第一表面低的位置; 空间部分，液体可以经由第一表面和第二表面之间的第一孔流动，并且经由不同于第一孔的第二孔向大气开放; 以及第一回收部，其回收流入空间部的液体的至少一部分。 这里，在基板的曝光的至少一部分中，发光面，第一表面和第二表面与基板的表面相对，并且通过液体从发射表面暴露出曝光的基板 在发射表面和衬底的表面之间。

公开(公告)号：US20140166622A1

公开(公告)日：2014-06-19

申请号：US14233305

申请日：2012-08-24

申请人： Junichi Abe ,  Shinji Sato ,  Tomoko Tanabe ,  Naoaki Inoue

发明人： Junichi Abe ,  Shinji Sato ,  Tomoko Tanabe ,  Naoaki Inoue

IPC分类号： H01H33/26

CPC分类号： H01H33/26 ,  G01R31/1227 ,  H01H33/668 ,  H02B13/0655

摘要： Capacitors (5a, 5b) are provided in the insulators of bushings (4a, 4b), respectively. One ends of the capacitors (5a, 5b) are connected to central conductors (3a, 3b) side, and the other ends are connected to a tank (1) side at the ground potential. When a discharge signal from the outside of the tank (1) reaches the capacitors (5a, 5b) through the central conductors (3a, 3b), the capacitors (5a, 5b) work as a filter to attenuate and prevent the signal in the frequency band of the discharge waveform from propagating to the inside of the tank (1). When an antenna (7) placed in the tank (1) receives a signal in the frequency band of the discharge waveform, a discharge detection unit (20) determines that a discharge inside the tank has been detected.

摘要翻译： 电容器（5a，5b）分别设置在衬套（4a，4b）的绝缘体中。 电容器（5a，5b）的一端与中心导体（3a，3b）侧连接，另一端与接地电位的水箱（1）侧连接。 当来自罐（1）的外部的放电信号通过中心导体（3a，3b）到达电容器（5a，5b）时，电容器（5a，5b）用作滤波器，以衰减并防止 放电波形的频带从传播到罐（1）的内部。 当放置在储罐（1）中的天线（7）接收到放电波形的频带中的信号时，放电检测单元（20）确定已经检测到罐内的放电。