公开(公告)号：US11666759B2

公开(公告)日：2023-06-06

申请号：US17069193

申请日：2020-10-13

申请人： Shinji Sato ,  Sukchan Kim ,  Taishi Watanabe ,  Yuki Mitani ,  Yuki Miyano ,  Shigenori Kawabata ,  Toru Sasaki

发明人： Shinji Sato ,  Sukchan Kim ,  Taishi Watanabe ,  Yuki Mitani ,  Yuki Miyano ,  Shigenori Kawabata ,  Toru Sasaki

IPC分类号： A61N1/36

CPC分类号： A61N1/36031 ,  A61N1/36034

摘要： A nerve stimulating apparatus includes a plurality of stimulating units configured to respectively apply stimuli to a plurality of nerve regions branching from a particular nerve region of a living body, and a stimulation timing controller configured to set generating timings of respectively generating the stimuli at the plurality of stimulating units. The stimulation timing controller sets the generating timings of generating the stimuli at the plurality of stimulating units based on response results of the particular nerve region, the response results being obtained in response to the stimuli that are respectively generated at the plurality of stimulating units and that are respectively applied to the plurality of nerve regions, and the response results being measured by a biometric information measuring apparatus that measures biometric information.

公开(公告)号：US08896806B2

公开(公告)日：2014-11-25

申请号：US12644703

申请日：2009-12-22

申请人： Shinji Sato

发明人： Shinji Sato

IPC分类号： G03B27/52

CPC分类号： G03F7/70341 ,  G03F7/70916

摘要： An exposure apparatus that exposes a substrate includes: an optical system that includes an emission surface from which an exposure light is emitted; a first surface that is disposed in at least a part of a surrounding of an optical path of the exposure light emitted from the emission surface; a second surface that is disposed in at least a part of a surrounding of the first surface and at a position lower than the first surface; a space portion into which a liquid can flow via a first aperture between the first surface and the second surface and which is opened to the atmosphere via a second aperture different from the first aperture; and a first recovery portion that recovers at least a part of the liquid flowing into the space portion. Here, the emission surface, the first surface, and the second surface are opposed to the surface of the substrate in at least a part of the exposure of the substrate, and the substrate is exposed with the exposure light from the emission surface via the liquid between the emission surface and the surface of the substrate.

摘要翻译： 曝光基板的曝光装置包括：包括发射曝光光的发射面的光学系统; 第一表面，其设置在从所述发射表面发射的所述曝光光的光路的周围的至少一部分中; 第二表面，其设置在所述第一表面的周围的至少一部分中并且位于比所述第一表面低的位置; 空间部分，液体可以经由第一表面和第二表面之间的第一孔流动，并且经由不同于第一孔的第二孔向大气开放; 以及第一回收部，其回收流入空间部的液体的至少一部分。 这里，在基板的曝光的至少一部分中，发光面，第一表面和第二表面与基板的表面相对，并且通过液体从发射表面暴露出曝光的基板 在发射表面和衬底的表面之间。

公开(公告)号：US20140166622A1

公开(公告)日：2014-06-19

申请号：US14233305

申请日：2012-08-24

申请人： Junichi Abe ,  Shinji Sato ,  Tomoko Tanabe ,  Naoaki Inoue

发明人： Junichi Abe ,  Shinji Sato ,  Tomoko Tanabe ,  Naoaki Inoue

IPC分类号： H01H33/26

CPC分类号： H01H33/26 ,  G01R31/1227 ,  H01H33/668 ,  H02B13/0655

摘要： Capacitors (5a, 5b) are provided in the insulators of bushings (4a, 4b), respectively. One ends of the capacitors (5a, 5b) are connected to central conductors (3a, 3b) side, and the other ends are connected to a tank (1) side at the ground potential. When a discharge signal from the outside of the tank (1) reaches the capacitors (5a, 5b) through the central conductors (3a, 3b), the capacitors (5a, 5b) work as a filter to attenuate and prevent the signal in the frequency band of the discharge waveform from propagating to the inside of the tank (1). When an antenna (7) placed in the tank (1) receives a signal in the frequency band of the discharge waveform, a discharge detection unit (20) determines that a discharge inside the tank has been detected.

摘要翻译： 电容器（5a，5b）分别设置在衬套（4a，4b）的绝缘体中。 电容器（5a，5b）的一端与中心导体（3a，3b）侧连接，另一端与接地电位的水箱（1）侧连接。 当来自罐（1）的外部的放电信号通过中心导体（3a，3b）到达电容器（5a，5b）时，电容器（5a，5b）用作滤波器，以衰减并防止 放电波形的频带从传播到罐（1）的内部。 当放置在储罐（1）中的天线（7）接收到放电波形的频带中的信号时，放电检测单元（20）确定已经检测到罐内的放电。

公开(公告)号：US08638608B2

公开(公告)日：2014-01-28

申请号：US13430502

申请日：2012-03-26

申请人： Chun-Hung Lai ,  Deepanshu Dutta ,  Shinji Sato ,  Gerrit Jan Hemink

发明人： Chun-Hung Lai ,  Deepanshu Dutta ,  Shinji Sato ,  Gerrit Jan Hemink

IPC分类号： G11C11/34

CPC分类号： G11C11/5628 ,  G11C16/0483 ,  G11C16/10

摘要： Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the location of the word line that is selected for programming, which may reduce or eliminate program disturb. The voltage applied to the gate of a select transistor of a NAND string may depend on the location of the selected word line. This could be either a source side or drain side select transistor. This may prevent or reduce program disturb that could result due to DIBL. This may also prevent or reduce program disturb that could result due to GIDL. A negative bias may be applied to the gate of a source side select transistor when programming at least some of the word lines. In one embodiment, progressively lower voltages are used for the gate of the drain side select transistor when programming progressively higher word lines.

摘要翻译： 公开了用于操作非易失性存储器的方法和装置。 一个或多个编程条件取决于选择用于编程的字线的位置，这可以减少或消除程序干扰。 施加到NAND串的选择晶体管的栅极的电压可以取决于所选字线的位置。 这可以是源极侧或漏极侧选择晶体管。 这可能会阻止或减少由于DIBL而导致的程序干扰。 这也可以防止或减少由于GIDL可能导致的程序干扰。 当编程至少一些字线时，负偏压可以施加到源极侧选择晶体管的栅极。 在一个实施例中，当编程逐渐增加的字线时，逐渐降低的电压用于漏极侧选择晶体管的栅极。

公开(公告)号：US08354322B2

公开(公告)日：2013-01-15

申请号：US13187399

申请日：2011-07-20

申请人： Fumitoshi Ito ,  Shinji Sato

发明人： Fumitoshi Ito ,  Shinji Sato

IPC分类号： H01L21/8249

CPC分类号： G11C11/5621 ,  G11C2211/5641

摘要： Techniques are disclosed herein for applying different process steps to single-level cell (SLC) blocks in a memory array than to multi-level cell (MLC) blocks such that the SLC blocks will have high endurance and the MLC blocks will have high reliability. In some aspects, different doping is used in the MLC blocks than the SLC blocks. In some aspects, different isolation is used in the MLC blocks than the SLC blocks. Techniques are disclosed that apply different read parameters depending on how many times a block has been programmed/erased. Therefore, blocks that have been cycled many times are read using different parameters than blocks that have been cycled fewer times.

公开(公告)号：US20120305790A1

公开(公告)日：2012-12-06

申请号：US13577741

申请日：2011-02-07

申请人： Katsushi Hanawa ,  Yasushi Iseki ,  Nobukazu Kakutani ,  Takuji Furukawa ,  Taku Inaniwa ,  Shinji Sato ,  Kouji Noda

发明人： Katsushi Hanawa ,  Yasushi Iseki ,  Nobukazu Kakutani ,  Takuji Furukawa ,  Taku Inaniwa ,  Shinji Sato ,  Kouji Noda

IPC分类号： A61N5/10

CPC分类号： A61N5/1043 ,  A61N5/1071 ,  A61N2005/1074 ,  A61N2005/1087 ,  G21K1/025

摘要： Provided is a particle beam irradiation apparatus capable of highly reliable measurement of a dose of each beam and capable of highly sensitive measurement of a leakage dose caused by momentary beam emission. The particle beam irradiation apparatus according to the present invention includes: an emission control portion that controls emission and termination of a particle beam; a control portion that sequentially changes an irradiation position of the particle beam relative to an affected area; first and second dosimeters that measure dose rates of the particle beam directed to the affected area; and an abnormality determination portion that accumulates the dose rates output from the first and second dosimeters for each of predetermined determination periods to calculate first and second sectional dose measurement values and that performs second abnormality determination of determining that there is an abnormality and outputs an interlock signal for terminating the emission of the particle beam in at least one of a case in which the first sectional dose measurement value exceeds a predetermined first reference range and a case in which the second sectional dose measurement value exceeds a predetermined second reference range.

摘要翻译： 提供一种能够高度可靠地测量每个光束的剂量并且能够高度敏感地测量由瞬时光束发射引起的泄漏剂量的粒子束照射装置。 根据本发明的粒子束照射装置包括：发射控制部分，其控制粒子束的发射和终止; 控制部，其依次改变所述粒子束相对于受影响区域的照射位置; 测量指向受影响区域的粒子束的剂量率的第一和第二剂量计; 以及异常判定部，其对于每个规定的判定期间累积从第一和第二剂量计输出的剂量率，以计算第一和第二截面剂量测量值，并且执行确定存在异常的第二异常判定并输出互锁信号 用于在第一部分剂量测量值超过预定的第一参考范围的情况和第二部分剂量测量值超过预定的第二参考范围的情况中的至少一个中终止粒子束的发射。

公开(公告)号：US20120236670A1

公开(公告)日：2012-09-20

申请号：US13486305

申请日：2012-06-01

申请人： Gerrit Jan Hemink ,  Shinji Sato

发明人： Gerrit Jan Hemink ,  Shinji Sato

IPC分类号： G11C7/04

CPC分类号： G11C16/26 ,  G11C7/04 ,  G11C11/5642

摘要： Data is programmed into and read from a set of target memory cells. When reading the data, temperature compensation is provided. The temperature compensation is based on temperature information and the state of one or more neighbor memory cells. In one embodiment, when data is read from set of target memory cells, the system senses the current temperature and determines the differences in temperature between the current temperature and the temperature at the time the data was programmed. If the difference in temperature is greater than a threshold, then the process of reading the data includes providing temperature compensation based on temperature information and neighbor state information. In one alternative, the decision to provide the temperature compensation can be triggered by conditions other than a temperature differential.

摘要翻译： 数据被编程到一组目标存储器单元中并从其读取。 读取数据时，提供温度补偿。 温度补偿基于温度信息和一个或多个相邻存储单元的状态。 在一个实施例中，当从目标存储器单元的集合读取数据时，系统感测当前温度并确定当前温度与数据编程时的温度之间的温度差。 如果温度差大于阈值，则读取数据的过程包括基于温度信息和邻近状态信息提供温度补偿。 在一个替代方案中，提供温度补偿的决定可以由温差以外的条件触发。

公开(公告)号：US20120114845A1

公开(公告)日：2012-05-10

申请号：US13266032

申请日：2010-04-21

申请人： Fabinia H. Romero ,  Yoshiko Nishijima ,  Haruo Hamaki ,  Shinji Sato ,  Taro Niki ,  Yasunori Motegi

发明人： Fabinia H. Romero ,  Yoshiko Nishijima ,  Haruo Hamaki ,  Shinji Sato ,  Taro Niki ,  Yasunori Motegi

IPC分类号： B05D5/00 ,  H01B1/22

CPC分类号： C09D5/24 ,  C09D5/103 ,  H01B1/22

摘要： Provided is a highly versatile conductive metallic coating material which is free from the limitation related to a facility without handling complication, and which can maintain its anticorrosive action for a long period. Specifically provided is a conductive metallic coating material which has an organic resin component and a metal component containing aluminum and magnesium and which exhibits a sacrificial anticorrosive reaction on iron. A content ratio of the metal component and the organic resin component is desirably 98:2 to 80:20 in terms of weight ratio. The conductive metallic coating material according to the present invention is usable for preventing corrosion of a building structure or a civil engineering structure and for repairing a corrosion proof treated surface of an existing building structure or a civil engineering structure.

摘要翻译： 提供了一种高度通用的导电金属涂层材料，其不受处理并不适用于设备的限制，并且可长期保持其防腐蚀作用。 具体地提供了一种导电金属涂层材料，其具有有机树脂组分和含有铝和镁的金属组分，并且在铁上表现出牺牲性防腐蚀反应。 金属成分和有机树脂成分的含有比优选为98:2〜80:20（重量比）。 根据本发明的导电金属涂层材料可用于防止建筑结构或土木工程结构的腐蚀，以及用于修复现有建筑结构或土木工程结构的防腐处理表面。

公开(公告)号：US20110151636A1

公开(公告)日：2011-06-23

申请号：US13024663

申请日：2011-02-10

申请人： Gerrit Jan Hemink ,  Shinji Sato

发明人： Gerrit Jan Hemink ,  Shinji Sato

IPC分类号： H01L21/336

CPC分类号： H01L27/11521 ,  G11C16/0483 ,  G11C16/10 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/66825 ,  H01L29/7885

摘要： A method for creating NAND flash memory. Source implantations are performed at a first implantation angle to areas between stacked gate structures of a NAND string. Drain implantations are performed at a second implantation angle to areas between the stacked gate structures. The source implantation can include n-type and p-type materials implanted under different angles, and the drain implantation can include n-type and p-type materials implanted under different angles. Or, the source implantation can include multiple n-type implantations under different angles, and the drain implantation can include multiple n-type implantations under different angles.

摘要翻译： 一种用于创建NAND闪存的方法。 以与NAND串的堆叠栅极结构之间的区域的第一注入角度执行源注入。 排水注入以与叠置的栅极结构之间的区域的第二注入角度进行。 源植入可以包括以不同角度注入的n型和p型材料，并且漏极注入可以包括以不同角度注入的n型和p型材料。 或者，源植入可以包括在不同角度下的多个n型注入，并且漏极注入可以包括在不同角度下的多个n型注入。

公开(公告)号：US07876618B2

公开(公告)日：2011-01-25

申请号：US12409020

申请日：2009-03-23

申请人： Sanghyun Lee ,  Masaaki Higashitani ,  Shinji Sato ,  Chih-Ming Wang

发明人： Sanghyun Lee ,  Masaaki Higashitani ,  Shinji Sato ,  Chih-Ming Wang

IPC分类号： G11C16/04

CPC分类号： G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/08

摘要： A memory device with reduced leakage current during programming and sense operations, and a method for operating such a memory device. In a non-volatile memory device, current leakage at the drain select gates of NAND strings can occur in unselected blocks when a selected block undergoes a program or read operation, and the bit lines are shared by the blocks. In one approach, in which a common transfer gate driver is provided for both blocks, the drain select gates are pre-charged at an optimum level, which minimizes leakage, and subsequently floated while a program or read voltage is applied to a selected word line in the selected block. In another approach, a separate transfer gate driver is provided for the unselected block so that the optimal select gate voltage can be driven in the unselected block, even while the program or read voltage is applied in the selected block.

摘要翻译： 在编程和感测操作期间具有减小的漏电流的存储器件，以及用于操作这种存储器件的方法。 在非易失性存储器件中，当所选择的块经历程序或读取操作，并且位线由块共享时，在NAND串的漏极选择栅极处的电流泄漏可能发生在未选择的块中。 在其中为两个块提供公共传输栅极驱动器的一种方法中，漏极选择栅极以最佳电平进行预充电，这使泄漏最小化，随后浮动，同时将程序或读取电压施加到所选择的字线 在所选的块中。 在另一种方法中，为未选择的块提供单独的传输栅极驱动器，使得即使在所选择的块中施加编程或读取电压，也可以在未选择的块中驱动最佳选择栅极电压。