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    Magnetic memory
    11.
    发明授权
    Magnetic memory 有权
    磁记忆

    公开(公告)号：US06831855B2

    公开(公告)日：2004-12-14

    申请号：US10345188

    申请日：2003-01-16

    申请人： Tatsuya Kishi ,  Minoru Amano ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Yoshihisa Iwata

    发明人： Tatsuya Kishi ,  Minoru Amano ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Yoshihisa Iwata

    IPC分类号： G11C1100

    CPC分类号： G11C11/16

    摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first writing wiring extending in a first direction on or below the magnetoresistance effect element, a center of gravity of an axial cross section of the wiring being apart from a center of thickness at the center of gravity, and the center of gravity being eccentric toward the magnetoresistance effect element; and a writing circuit configured to pass a current through the first writing wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.

    摘要翻译： 磁存储器包括：具有磁记录层的磁阻效应元件; 在磁阻效应元件上或其下方沿第一方向延伸的第一写入布线，布线的轴向横截面的重心与重心处的厚度中心分开，并且重心偏向 磁阻效应元件; 以及写入电路，其被配置为使电流通过所述第一写入布线，以便通过所述电流产生的磁场将信息记录在所述磁记录层中。

    Magnetic memory
    12.
    发明授权
    Magnetic memory 有权
    磁记忆

    公开(公告)号：US06807094B2

    公开(公告)日：2004-10-19

    申请号：US10769757

    申请日：2004-02-03

    申请人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi ,  Minoru Amano ,  Tomomasa Ueda ,  Hiroaki Yoda ,  Yoshiaki Asao ,  Yoshihisa Iwata ,  Tatsuya Kishi

    发明人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi ,  Minoru Amano ,  Tomomasa Ueda ,  Hiroaki Yoda ,  Yoshiaki Asao ,  Yoshihisa Iwata ,  Tatsuya Kishi

    IPC分类号： G11C1115

    CPC分类号： G11C11/16

    摘要： A magnetic memory includes a magnetoresistance effect element having a magnetic recording layer, a first wiring extending in a first direction on or below the magnetoresistance effect element, a covering layer provided on at least both sides of the first wiring, and a writing circuit configured to pass a current through the first wiring in order to record information in the magnetic recording layer by a magnetic field generated by the current. The covering layer is made of magnetic material and has a uniaxial anisotropy in the first direction, along which a magnetization of the covering layer occurs.

    摘要翻译： 磁存储器包括具有磁记录层的磁阻效应元件，在磁阻效应元件上或其下方沿第一方向延伸的第一布线，设置在第一布线的至少两侧的覆盖层，以及写入电路， 通过第一布线传递电流，以便通过电流产生的磁场将信息记录在磁记录层中。 覆盖层由磁性材料制成，并且在第一方向上具有单轴各向异性，沿着该方向发生覆盖层的磁化。

    Magnetic memory
    13.
    发明授权
    Magnetic memory 有权
    磁记忆

    公开(公告)号：US06765821B2

    公开(公告)日：2004-07-20

    申请号：US10662533

    申请日：2003-09-16

    申请人： Yoshiaki Saito ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Minoru Amano

    发明人： Yoshiaki Saito ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Minoru Amano

    IPC分类号： G11C1114

    CPC分类号： G11C11/15

    摘要： There are provided at least one wire, a magnetoresistive effect element having a storage layer whose magnetization direction varies according to a current magnetic field generated by causing a current to flow in the wire, and first yokes provided so as to be spaced from at least one pair of opposed side faces of the magnetoresistive effect element to form a magnetic circuit in cooperation with the magnetoresistive effect element when a current is caused to flow in the wire. Each of the first yokes has at least two soft magnetic layers which are stacked via a non-magnetic layer.

    摘要翻译： 提供了至少一根导线，一个磁阻效应元件，其具有存储层，其磁化方向根据通过使电流在线中流动而产生的电流磁场而变化，并且第一磁轭设置成与至少一个 磁阻效应元件的一对相对的侧面，当电流在电线中流动时与磁阻效应元件协同地形成磁路。 每个第一轭具有至少两个通过非磁性层堆叠的软磁性层。

    Method for producing magnetic memory device
    14.
    发明授权
    Method for producing magnetic memory device 失效

    公开(公告)号：US07041603B2

    公开(公告)日：2006-05-09

    申请号：US10396435

    申请日：2003-03-26

    申请人： Minoru Amano ,  Tatsuya Kishi ,  Yoshiaki Saito ,  Tomomasa Ueda ,  Hiroaki Yoda

    发明人： Minoru Amano ,  Tatsuya Kishi ,  Yoshiaki Saito ,  Tomomasa Ueda ,  Hiroaki Yoda

    IPC分类号： H01L21/302

    CPC分类号： G11C11/15 ,  Y10T29/49021

    摘要： There is provided a magnetic memory device which has a small switching current for a writing line and which has a small variation therein. A method for producing such a magnetic memory device includes: forming a magnetoresistive effect element; forming a first insulating film so as to cover the magnetoresistive effect element; forming a coating film so as to cover the first insulating film; exposing a top face of the magnetoresistive effect element; forming an upper writing line on the magnetoresistive effect element; exposing the first insulating film on a side portion of the magnetoresistive effect element by removing a part or all of the coating film; and forming a yoke structural member so as to cover at least a side portion of the upper writing line and so as to contact the exposed first insulating film on the side portion of the magnetoresistive effect element.

    Magnetic memory
    15.
    发明授权
    Magnetic memory 失效
    磁记忆

    公开(公告)号：US06934184B2

    公开(公告)日：2005-08-23

    申请号：US10893915

    申请日：2004-07-20

    申请人： Minoru Amano ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Yoshihisa Iwata

    发明人： Minoru Amano ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Yoshihisa Iwata

    IPC分类号： H01L27/105 ,  G11C11/15 ,  H01L21/8246 ,  H01L43/08

    CPC分类号： G11C11/15

    摘要： A highly reliable magnetic memory exhibits enhanced data-holding stability at high storage density in a storage layer of a magnetoresistive effect element used for memory cells. A magnetic memory includes a memory cell array having first wirings, second wirings intersecting the first wirings and memory cells each provided at an intersection area of the corresponding first and second wirings. Each memory cell is selected when the corresponding first and second wirings are selected. Each memory cell includes a magnetoresistive effect element having a storage layer in which data is stored by magnetic fields generated when current flows the selected first and second wirings, a first magnetic member, having two ends, provided as partially surrounding each first wiring and the two ends being situated in a direction of easy axis of magnetization, to form a closed-loop magnetic circuitry with the storage layer, and a second magnetic member, having two ends, provided as partially surrounding each second wiring and the two ends being situated in a direction of hard axis of magnetization, to amplify magnetic fields applied to the storage layer in the direction of hard axis of magnetization. Each end of the first magnetic member is situated as closer than each end of the second magnetic member to the storage layer.

    摘要翻译： 在用于存储单元的磁阻效应元件的存储层中，高度可靠的磁存储器在高存储密度下表现出增强的数据保持稳定性。 磁存储器包括具有第一布线的存储单元阵列，与第一布线相交的第二布线和各自设置在相应的第一布线和第二布线的交叉区域的存储单元。 当选择对应的第一和第二布线时，选择每个存储单元。 每个存储单元包括磁阻效应元件，其具有存储层，其中当电流流过所选择的第一和第二布线时，通过产生的磁场来存储数据;第一磁性构件，具有设置为部分地包围每个第一布线的两端， 端部位于容易的磁化轴的方向上，以形成具有存储层的闭环磁路，以及具有两端的第二磁性构件，其设置为部分地包围每个第二布线，并且两端位于 磁化强度轴的方向，放大沿着硬磁化轴的方向施加到存储层的磁场。 第一磁性构件的每个端部被定位成比第二磁性构件的每个端部更靠近存储层。

    Magnetic memory device having yoke layer
    18.
    发明授权
    Magnetic memory device having yoke layer 有权
    具有轭层的磁存储器件

    公开(公告)号：US06879515B2

    公开(公告)日：2005-04-12

    申请号：US10926047

    申请日：2004-08-26

    申请人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

    发明人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

    IPC分类号： G11C11/15 ,  G11C11/00 ,  G11C11/16 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/00 ,  H01L27/105 ,  H01L27/22 ,  H01L29/82 ,  H01L43/00 ,  H01L43/08

    CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08

    摘要： A magnetic memory device includes first wiring which runs in the first direction, second wiring which runs in the second direction, a magneto-resistance element which is arranged at an intersection between the first and second wirings, a first yoke main body which covers at least either of the lower surface and two side surfaces of the first wring, a second yoke main body which covers at least either of the upper surface and two side surfaces of the second wiring, first and second yoke tips which are arranged on two sides of the magneto-resistance element in the first direction at an interval from the magneto-resistance element, and third and fourth yoke tips which are arranged on two sides of the magneto-resistance element in the second direction at an interval from the magneto-resistance element.

    摘要翻译： 磁存储装置包括沿第一方向延伸的第一布线，沿第二方向延伸的第二布线，布置在第一布线和第二布线之间的交叉点处的磁阻元件，至少覆盖第一布线 第一绕线的下表面和两个侧表面中的任一个，覆盖第二布线的上表面和两个侧表面中的至少一个的第二轭主体，布置在第二布线的两侧上的第一和第二轭尖 磁阻元件以与磁阻元件间隔的方式在第一方向上，以及第三和第四磁轭尖端，其在与磁阻元件间隔开的第二方向上布置在磁阻元件的两侧。

    Magnetic memory device having yoke layer, and manufacturing method
    20.
    发明授权
    Magnetic memory device having yoke layer, and manufacturing method 有权
    具有轭层的磁记忆体装置及其制造方法

    公开(公告)号：US06797536B2

    公开(公告)日：2004-09-28

    申请号：US10767997

    申请日：2004-02-02

    申请人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

    发明人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

    IPC分类号： H01L2100

    CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08

    摘要： A magnetic memory device includes first wiring which runs in the first direction, second wiring which runs in the second direction, a magneto-resistance element which is arranged at an intersection between the first and second wirings, a first yoke main body which covers at least either of the lower surface and two side surfaces of the first wring, a second yoke main body which covers at least either of the upper surface and two side surfaces of the second wiring, first and second yoke tips which are arranged on two sides of the magneto-resistance element in the first direction at an interval from the magneto-resistance element, and third and fourth yoke tips which are arranged on two sides of the magneto-resistance element in the second direction at an interval from the magneto-resistance element.

    摘要翻译： 磁存储装置包括沿第一方向延伸的第一布线，沿第二方向延伸的第二布线，布置在第一布线和第二布线之间的交叉点处的磁阻元件，至少覆盖第一布线 第一绕线的下表面和两个侧表面中的任一个，覆盖第二布线的上表面和两个侧表面中的至少一个的第二轭主体，布置在第二布线的两侧上的第一和第二轭尖 磁阻元件以与磁阻元件间隔的方式在第一方向上，以及第三和第四磁轭尖端，其在与磁阻元件间隔开的第二方向上布置在磁阻元件的两侧。