摘要:
Selective ion implantation on the respective polysilicon is performed by utilizing a low temperature accelerated oxidation phenomenon in polysilicon with a high impurity concentration and the dependence of an accelerated energy of the impurity projection range in the ion implantation, so that formation of a mask resist pattern by photoetching is not necessary for each incorporation step of an impurity.A base (source drain) electrode is formed by polysilicon separated by a selective oxidation method and a selective oxide film in connection with an emitter (gate) region is removed to form a side wall spacer on the inner surface of the emitter (gate) region, thus loading to formation of the emitter (gate) in a reduced size.
摘要:
A power conversion apparatus capable of reducing the conduction loss to achieve high efficiency yielding a downsized and weight-reduced apparatus and a method for driving such a power conversion apparatus is disclosed. A power conversion apparatus comprising a switching-element driving circuit which includes a current transformer having a primary coil connected to an current control type switching element, and a driving-current generating circuit formed of a secondary coil of the current transformer and a rectifying circuit connected to the secondary coil, wherein an output current generated in the driving-current generating circuit is supplied to the switching element as a driving current of the switching element, and a method for driving the switching element of such a power conversion apparatus are disclosed. This method comprises the steps of detecting an output current of the switching element, and extracting a part of the output current of the driving-current generating circuit out of the switching-element driving circuit so as to variably controlling the driving current of the switching element in response to the output current of the switching element. Preferably, the output current of the driving-current generating circuit extracted out of the switching-element driving circuit is supplied to any other auxiliary power supply as a regenerative power.
摘要:
It is an object of the invention to provide a magnetic sensor and a current sensor that exhibit high performance at low costs. A magnetic sensor has a magnetic core (1) having a magnetic saturation property and a sensor coil (2) wound around the magnetic core (1). An end of a detection coil (20) is connected to an end of the sensor coil (2). The other end of the detection coil (20) is grounded. The magnetic sensor further comprises a drive circuit (3) and a detection circuit (4). The drive circuit (3) has a series resonance circuit part of which is made up of the sensor coil (2). To the sensor coil (2) the drive circuit (3) supplies a resonance current flowing into the series resonance circuit as an alternating current that allows the magnetic core (1) to reach a saturation region. The detection circuit (4) detects a magnetic field to be measured by detecting variations in resonance current flowing through the sensor coil (2).
摘要:
The present invention provide a partial resonance PWM converter capable of making the switching loss occurring at a switch approximately zero and high efficiency by controlling a switching timing. A series circuit composed of upper and lower main switches is connected in parallel with a DC power supply, and diodes are respectively connected in parallel with each of the main switches in the opposite direction of a polarity of the DC power supply. A series circuit composed of upper and lower auxiliary switches is connected in parallel with the DC power supply, and diodes are respectively connected in parallel with each of the auxiliary switches in the opposite direction of the polarity of the DC power supply. A series resonance circuit composed of a capacitor and an inductor is inserted between the juncture of the upper and lower main switches and a juncture of the upper and lower auxiliary switches. The switching timing is controlled to make the auxiliary switch turn on just before the main switch is switched, to make the main switch turn off during the diode connected in parallel with each of the main switches is in ON condition, and to make the auxiliary switch turn off during the ON condition of the diode connected in parallel with each of the auxiliary switches.
摘要:
A bi-polar transistor structure in a superhigh speed logic integrated circuit, and a process for producing the same are disclosed. The transistor has a substantially coaxial symmetric structure. Single crystal active layers as base and collector regions have peripheries surrounded wholly or partially by respective polycrystalline electrode layers. The polysilicon electrodes have lateral portions and downward depending portions that connect to single crystal layers. The polycrystalline electrode layers are separated from each other by insulation. One process for producing the structure uses only thin film forming techniques and etching techniques to dispose the active layers, an emitter electrode layer, parts of the other electrode layers and parts of the insulating layers inside a recess formed in an insulating layer formed on a substrate. Another process uses a photoetching technique by which polycrystalline layers for base and collector electrodes are patterned. Around the patterned polycrystalline electrode, side wall insulating layers are formed in the respective later steps.