Method for fabricating a semiconductor device
    11.
    发明授权
    Method for fabricating a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US5219768A

    公开(公告)日:1993-06-15

    申请号:US640423

    申请日:1991-01-09

    申请人: Yoshihisa Okita

    发明人: Yoshihisa Okita

    摘要: Selective ion implantation on the respective polysilicon is performed by utilizing a low temperature accelerated oxidation phenomenon in polysilicon with a high impurity concentration and the dependence of an accelerated energy of the impurity projection range in the ion implantation, so that formation of a mask resist pattern by photoetching is not necessary for each incorporation step of an impurity.A base (source drain) electrode is formed by polysilicon separated by a selective oxidation method and a selective oxide film in connection with an emitter (gate) region is removed to form a side wall spacer on the inner surface of the emitter (gate) region, thus loading to formation of the emitter (gate) in a reduced size.

    摘要翻译: PCT No.PCT / JP90 / 00590 Sec。 371日期1991年1月9日 102(e)日期1991年1月9日PCT提交1990年5月9日PCT公布。 出版物WO90 / 日期为1990年11月15日。通过利用具有高杂质浓度的多晶硅中的低温加速氧化现象和离子注入中的杂质投影范围的加速能量的依赖性来进行各多晶硅上的选择性离子注入,使得 通过光刻法形成掩模抗蚀剂图案对于杂质的每个掺入步骤不是必需的。 基极(源极漏极)电极由选择性氧化法分离的多晶硅形成,去除与发射极(栅极)区域相关的选择性氧化物膜,以在发射极(栅极)区域的内表面上形成侧壁间隔物 ,从而以减小的尺寸加载到发射极(栅极)的形成。

    Method and apparatus for driving switching element in power converter
    12.
    发明授权
    Method and apparatus for driving switching element in power converter 失效
    用于驱动电源转换器中的开关元件的方法和装置

    公开(公告)号:US06614667B1

    公开(公告)日:2003-09-02

    申请号:US09830102

    申请日:2001-04-23

    IPC分类号: H02M3335

    摘要: A power conversion apparatus capable of reducing the conduction loss to achieve high efficiency yielding a downsized and weight-reduced apparatus and a method for driving such a power conversion apparatus is disclosed. A power conversion apparatus comprising a switching-element driving circuit which includes a current transformer having a primary coil connected to an current control type switching element, and a driving-current generating circuit formed of a secondary coil of the current transformer and a rectifying circuit connected to the secondary coil, wherein an output current generated in the driving-current generating circuit is supplied to the switching element as a driving current of the switching element, and a method for driving the switching element of such a power conversion apparatus are disclosed. This method comprises the steps of detecting an output current of the switching element, and extracting a part of the output current of the driving-current generating circuit out of the switching-element driving circuit so as to variably controlling the driving current of the switching element in response to the output current of the switching element. Preferably, the output current of the driving-current generating circuit extracted out of the switching-element driving circuit is supplied to any other auxiliary power supply as a regenerative power.

    摘要翻译: 公开了一种能够降低传导损耗以实现高效率产生小型化和减重装置的电力转换装置和用于驱动这种电力转换装置的方法。 一种电力转换装置,包括开关元件驱动电路,该开关元件驱动电路包括具有连接到电流控制型开关元件的初级线圈的电流互感器以及由电流互感器的次级线圈形成的驱动电流产生电路和连接到电流互感器的整流电路 到二次线圈,其中在驱动电流产生电路中产生的输出电流作为开关元件的驱动电流被提供给开关元件,并且公开了一种用于驱动这种电力转换装置的开关元件的方法。 该方法包括以下步骤:检测开关元件的输出电流,并将驱动电流产生电路的输出电流的一部分提取出开关元件驱动电路,以便可变地控制开关元件的驱动电流 响应于开关元件的输出电流。 优选地,从开关元件驱动电路抽出的驱动电流产生电路的输出电流作为再生电力被提供给任何其它辅助电源。

    Magnetic sensor apparatus and current sensor apparatus
    13.
    发明授权
    Magnetic sensor apparatus and current sensor apparatus 失效
    磁传感器装置和电流传感器装置

    公开(公告)号:US06316931B1

    公开(公告)日:2001-11-13

    申请号:US09484796

    申请日:2000-01-18

    IPC分类号: G01R3300

    CPC分类号: G01V3/101 G01R15/20

    摘要: It is an object of the invention to provide a magnetic sensor and a current sensor that exhibit high performance at low costs. A magnetic sensor has a magnetic core (1) having a magnetic saturation property and a sensor coil (2) wound around the magnetic core (1). An end of a detection coil (20) is connected to an end of the sensor coil (2). The other end of the detection coil (20) is grounded. The magnetic sensor further comprises a drive circuit (3) and a detection circuit (4). The drive circuit (3) has a series resonance circuit part of which is made up of the sensor coil (2). To the sensor coil (2) the drive circuit (3) supplies a resonance current flowing into the series resonance circuit as an alternating current that allows the magnetic core (1) to reach a saturation region. The detection circuit (4) detects a magnetic field to be measured by detecting variations in resonance current flowing through the sensor coil (2).

    摘要翻译: 本发明的目的是提供一种以低成本呈现高性能的磁传感器和电流传感器。 磁传感器具有磁饱和特性的磁芯(1)和缠绕在磁芯(1)上的传感器线圈(2)。 检测线圈(20)的一端连接到传感器线圈(2)的一端。 检测线圈(20)的另一端接地。 磁传感器还包括驱动电路(3)和检测电路(4)。 驱动电路(3)的串联谐振电路部分由传感器线圈(2)构成。 驱动电路(3)向传感器线圈(2)提供作为允许磁芯(1)达到饱和区域的交流电流流入串联谐振电路的谐振电流。 检测电路(4)通过检测流过传感器线圈(2)的谐振电流的变化来检测要测量的磁场。

    Partial resonance PWM converter
    14.
    发明授权
    Partial resonance PWM converter 有权
    部分谐振PWM转换器

    公开(公告)号:US06172882B2

    公开(公告)日:2001-01-09

    申请号:US09469276

    申请日:1999-12-22

    IPC分类号: H02M3335

    CPC分类号: H02M7/5387 H02M2007/4811

    摘要: The present invention provide a partial resonance PWM converter capable of making the switching loss occurring at a switch approximately zero and high efficiency by controlling a switching timing. A series circuit composed of upper and lower main switches is connected in parallel with a DC power supply, and diodes are respectively connected in parallel with each of the main switches in the opposite direction of a polarity of the DC power supply. A series circuit composed of upper and lower auxiliary switches is connected in parallel with the DC power supply, and diodes are respectively connected in parallel with each of the auxiliary switches in the opposite direction of the polarity of the DC power supply. A series resonance circuit composed of a capacitor and an inductor is inserted between the juncture of the upper and lower main switches and a juncture of the upper and lower auxiliary switches. The switching timing is controlled to make the auxiliary switch turn on just before the main switch is switched, to make the main switch turn off during the diode connected in parallel with each of the main switches is in ON condition, and to make the auxiliary switch turn off during the ON condition of the diode connected in parallel with each of the auxiliary switches.

    摘要翻译: 本发明提供一种部分谐振PWM转换器,其能够通过控制切换定时使开关处的开关损耗在近似为零和高效率下发生。 由上,下主开关构成的串联电路与直流电源并联连接,二极管与直流电源极性相反的方向分别与主开关并联。 由上,下辅助开关构成的串联电路与直流电源并联连接,二极管分别与直流电源极性相反的方向与各辅助开关并联。 由电容器和电感器组成的串联谐振电路插入在上下主开关的接合部和上下辅助开关的接合部之间。 控制切换定时,使辅助开关刚好在主开关切换之前打开,使主开关在与主开关并联连接的二极管处于导通状态时关闭,并使辅助开关 在与每个辅助开关并联连接的二极管的导通条件期间关闭。

    Process for forming bipolar transistor structure
    15.
    发明授权
    Process for forming bipolar transistor structure 失效
    用于形成双极晶体管结构的工艺

    公开(公告)号:US5234844A

    公开(公告)日:1993-08-10

    申请号:US734620

    申请日:1991-07-23

    申请人: Yoshihisa Okita

    发明人: Yoshihisa Okita

    摘要: A bi-polar transistor structure in a superhigh speed logic integrated circuit, and a process for producing the same are disclosed. The transistor has a substantially coaxial symmetric structure. Single crystal active layers as base and collector regions have peripheries surrounded wholly or partially by respective polycrystalline electrode layers. The polysilicon electrodes have lateral portions and downward depending portions that connect to single crystal layers. The polycrystalline electrode layers are separated from each other by insulation. One process for producing the structure uses only thin film forming techniques and etching techniques to dispose the active layers, an emitter electrode layer, parts of the other electrode layers and parts of the insulating layers inside a recess formed in an insulating layer formed on a substrate. Another process uses a photoetching technique by which polycrystalline layers for base and collector electrodes are patterned. Around the patterned polycrystalline electrode, side wall insulating layers are formed in the respective later steps.

    摘要翻译: 公开了超高速逻辑集成电路中的双极晶体管结构及其制造方法。 晶体管具有基本上同轴的对称结构。 作为基极和集电极区域的单晶有源层具有由相应的多晶电极层完全或部分地围绕的周边。 多晶硅电极具有连接到单晶层的侧向部分和向下的垂直部分。 多晶电极层通过绝缘彼此分离。 制造该结构的一个方法仅使用薄膜形成技术和蚀刻技术来将有源层,发射极电极层,其它电极层的一部分和绝缘层的部分置于形成在形成于基板上的绝缘层中的凹部内 。 另一种方法使用光刻技术,通过该技术,用于基极和集电极电极的多晶层被图案化。 在图案化的多晶电极周围,在相应的后续步骤中形成侧壁绝缘层。