公开(公告)号：US4866000A

公开(公告)日：1989-09-12

申请号：US245297

申请日：1988-09-16

申请人： Yoshihisa Okita

发明人： Yoshihisa Okita

IPC分类号： H01L29/73 ,  H01L21/285 ,  H01L21/331 ,  H01L29/732

CPC分类号： H01L29/66272 ,  H01L21/28525 ,  H01L29/7325

摘要： In method of fabricating a bipolar transistor on a semiconductor substrate, the emitter pattern is formed using the horizontal etching effect and filling-in effect of the RF-bias sputtering method, so a fine, self-aligned emitter pattern can be created that is disposed entirely in the center of the active base region without the use of photoetching. In addition, the passive base layer and the emitter layer can approach each other to any desired degree as long as they do not touch, so no high-concentration base layer is necessary, the base resistance is reduced, and the passive base region is reduced to a very small size. Furthermore, after the formation of the base region, the only heat treatment step that alters the diffusion layer profile is the formation of the emitter layer, so the use of a thin epitaxial layer to reduce the collector resistance does not result in proximity of the buried collector layer and the passive base layer.

摘要翻译： 在半导体衬底上制造双极晶体管的方法中，使用RF偏压溅射法的水平蚀刻效果和填充效果形成发射极图案，因此可以产生精细的自对准发射极图案，其被布置 完全在活性基区的中心，而不使用光刻。 另外，被动基极层和发射极层只要不接触即可相互接近，因此不需要高浓度基极层，基极电阻降低，被动基极区域减小 到非常小的尺寸。 此外，在形成基极区之后，改变扩散层轮廓的唯一热处理步骤是形成发射极层，因此使用薄的外延层来降低集电极电阻不会导致埋入 集电极层和被动基极层。

公开(公告)号：US06208541B1

公开(公告)日：2001-03-27

申请号：US09599926

申请日：2000-06-22

申请人： Kazuyuki Itoh ,  Yoshihisa Okita ,  Katsuaki Tanaka

发明人： Kazuyuki Itoh ,  Yoshihisa Okita ,  Katsuaki Tanaka

IPC分类号： H02M324

CPC分类号： H02M7/538 ,  H02M2001/0048 ,  Y02B70/1491

摘要： This PWM inverter apparatus includes a first and second current control type semiconductor switching elements connected in series which are connected in parallel to a DC power supply. An output is generated by alternately switching the first and second semiconductor switching elements. Resistive semiconductor switching elements having a higher switching speed than the first and second semiconductor switching elements and a resistance-to-current characteristics producing a voltage drop are respectively connected in parallel to respective the first and second semiconductor switching elements. In a half cycle of an alternating output current, while the output current is higher than a predetermined rate with respect to a peak current, a switching timing is controlled to produce a switching control signal to the resistive semiconductor switching elements ahead of a switching control signal to the first and second semiconductor switching elements, and to terminate the switching control signal to the resistive semiconductor switching elements at a time when a predetermined period passes after the switching control signal given to the first and second semiconductor switching elements has been terminated. In the half cycle of the alternating output current, while the output current is lower than the predetermined rate with respect to the peak current, the switching timing is controlled to generate the output by the switching operation only of the resistive semiconductor switching elements.

摘要翻译： 该PWM逆变器装置包括并联连接到DC电源的串联连接的第一和第二电流控制型半导体开关元件。 通过交替地切换第一和第二半导体开关元件来产生输出。 具有比第一和第二半导体开关元件更高的开关速度的电阻半导体开关元件和产生电压降的电阻 - 电流特性分别并联连接到第一和第二半导体开关元件。 在交流输出电流的半周期中，当输出电流相对于峰值电流高于预定速率时，控制切换定时以在切换控制信号之前产生到电阻性半导体开关元件的切换控制信号 并且在给予第一和第二半导体开关元件的开关控制信号已经终止之后，在预定周期经过时，将开关控制信号终止于电阻性半导体开关元件。 在交流输出电流的半周期中，当输出电流相对于峰值电流低于预定速率时，控制开关定时以仅通过电阻式半导体开关元件的开关操作产生输出。

公开(公告)号：US4749663A

公开(公告)日：1988-06-07

申请号：US66082

申请日：1987-06-24

申请人： Yoshihisa Okita

发明人： Yoshihisa Okita

IPC分类号： H01L21/3205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/316 ,  H01L21/768 ,  H01L21/465

CPC分类号： H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76819

摘要： In a process of fabricating a semiconductor IC having a plurality of metal wiring conductor layers on a semiconductor substrate and an insulation layer between the metal wiring conductor layers, the insulation layer being formed of a silicon oxide film is formed by means of RF bias-sputtering, a silicon oxide film is formed by means of RF bias sputtering under such a condition that the deposition rate and the etching rate on a pattern surface 45.degree. inclined with respect to the reference surface of the semiconductor substrate are equal, part of the silicon oxide film over the underlying metal wiring conductor layer being protruded; a trench is formed in part of the silicon oxide film covering the metal wiring conductor layer, and the silicon oxide is etched by RF bias sputtering under such a condition that the deposition rate and etching rate on a pattern surface parallel to the reference surface of the semiconductor substrate are equal, until the protrusion of the silicon oxide film over the metal wiring conductor is removed so that the entire silicon oxide film is planarized.

摘要翻译： 在半导体衬底上制造具有多个金属布线导体层的半导体IC和金属布线导体层之间的绝缘层的工艺中，通过RF偏压溅射法形成由氧化硅膜形成的绝缘层 在相对于半导体衬底的参考表面倾斜45°的图案表面上的沉积速率和蚀刻速率相等的条件下，通过RF偏压溅射形成氧化硅膜，部分氧化硅 在下面的金属布线导体层上突出的膜; 在覆盖金属布线导体层的氧化硅膜的一部分上形成沟槽，并且通过RF偏压溅射来蚀刻氧化硅，条件是在与基板表面平行的图案表面上的沉积速率和蚀刻速率 半导体衬底相等，直到去除金属布线导体上的氧化硅膜的突起，使得整个氧化硅膜被平坦化。

公开(公告)号：US06438004B1

公开(公告)日：2002-08-20

申请号：US10033412

申请日：2001-12-26

申请人： Katsuaki Tanaka ,  Yoshihisa Okita ,  Kazuyuki Itoh

发明人： Katsuaki Tanaka ,  Yoshihisa Okita ,  Kazuyuki Itoh

IPC分类号： H02H7122

CPC分类号： H02M7/5233 ,  H02M1/12 ,  H02M7/4826 ,  H02M2001/0048 ,  Y02B70/1491

摘要： The present invention discloses a power conversion apparatus comprising a control circuit for generating a switching signal at the timing allowing soft-switching to be achieved, and free from any occurrence of ripple. The power conversion apparatus includes a first main switch (Q1) and a second main switch (Q2) which are connected in series with each other. One of the ends of the first main switch is connected with the positive side of a DC power supply, and one of the ends of the second main switch is connected to the negative side of the DC power supply. A diode (D1, D2) is connected in parallel with each of the main switches so as to become reverse biased with respect to the DC power supply. A main-switch snubber capacitor (C1, C2) is connected in parallel with each of the main switches. A load is connected with the junction between the pair of main switches, and the main switches are controllably switched according a switching signal from a control circuit to generate an output. A first auxiliary resonant circuit including serial-connected first and second auxiliary switches (Q3, Q4, Q5, Q6) and a resonant inductor (L1) connected in series with the second auxiliary switch is connected with each of the positive side of the DC power supply and the junction between the two main switches. A diode is connected to each of the first and second auxiliary switches so as to become reverse biased with respect to the DC power supply. The control circuit provides a turn-on signal to the first and second auxiliary switches according to a voltage signal as an input representing the voltage across each of the main switches and auxiliary switches from voltage detecting means before a turn-on signal as the switching signal is provided to the first main switch.

摘要翻译： 本发明公开了一种电力转换装置，包括控制电路，用于在允许实现软切换的时刻产生开关信号，并且不发生纹波。电力转换装置包括第一主开关（Q1）和 第二主开关（Q2），它们彼此串联连接。 第一主开关的一端与直流电源的正极连接，第二主开关的一端与直流电源的负极连接。 二极管（D1，D2）与每个主开关并联连接，以便相对于直流电源反向偏置。 主开关缓冲电容器（C1，C2）与每个主开关并联连接。 负载与一对主开关之间的连接点连接，并且主开关根据来自控制电路的开关信号可控地切换以产生输出。 包括串联连接的第一和第二辅助开关（Q3，Q4，Q5，Q6）和与第二辅助开关串联连接的谐振电感器（L1）的第一辅助谐振电路与直流电源的正极侧 供应和两个主开关之间的连接处。 二极管连接到第一和第二辅助开关中的每一个，以便相对于直流电源反向偏置。 控制电路根据作为输入的电压信号向第一辅助开关和第二辅助开关提供导通信号，该输入表示在作为开关信号的导通信号之前，来自电压检测装置的每个主开关和辅助开关上的电压 被提供给第一主开关。

公开(公告)号：US06414854B2

公开(公告)日：2002-07-02

申请号：US09873606

申请日：2001-09-07

申请人： Kazuyuki Itoh ,  Yoshihisa Okita ,  Katsuaki Tanaka ,  Yoshinobu Takayanagi

发明人： Kazuyuki Itoh ,  Yoshihisa Okita ,  Katsuaki Tanaka ,  Yoshinobu Takayanagi

IPC分类号： H02M3335

CPC分类号： H02M1/08 ,  H02M3/155 ,  H02M2001/0048 ,  Y02B70/1491

摘要： In a power conversion apparatus using a semiconductor switching element, a collector-emitter voltage detecting device is provided to detect the collector-emitter voltage in the semiconductor switching element in the power conversion apparatus in order to comprehensively reduce switching loss and conduction loss arising in a switching element. A base current supplied to the switching element is controlled based on the detected collector-emitter voltage so as to control the collector-emitter voltage or control a regenerative power to be transmitted from a switching element driving power supply to an external auxiliary power supply or the like. This provides an optimum driving in consideration of factors including dispersion in a specific current amplification factor (hfe) of the switching element, variance in the hfe caused by temperature, and variance in the hfe to a current flowing through the switching element, for reducing a sum of conduction loss and driving power of the switching element.

公开(公告)号：US06323634B1

公开(公告)日：2001-11-27

申请号：US09484793

申请日：2000-01-18

申请人： Shiro Nakagawa ,  Katsuaki Tanaka ,  Katsumi Yabusaki ,  Yoshihisa Okita

发明人： Shiro Nakagawa ,  Katsuaki Tanaka ,  Katsumi Yabusaki ,  Yoshihisa Okita

IPC分类号： G01R3300

CPC分类号： G01R15/20 ,  G01R33/04

摘要： A magnetic sensor apparatus comprises a magnetic detector (101) that outputs a signal responsive to a magnetic field and a magnetic substance (110) having a cavity (111) in which the magnetic detector (101) is placed. The magnetic detector (101) is placed in the cavity (111) of the magnetic substance (110). The ratio between a magnetic field (H) to be measured and a magnetic field applied to the magnetic detector (101) is set to a specific value, based on at least one of a first demagnetizing factor depending on the shape of the magnetic substance (110) and a second demagnetizing factor depending on the shape of the cavity (111). The magnetic sensor apparatus further comprises a feedback coil (112) that applies a negative feedback magnetic field to the magnetic detector (101) and a reference magnetic field coil (113) that applies a reference alternating magnetic filed to the magnetic detector (101) for controlling the property of the magnetic detector (101).

摘要翻译： 磁传感器装置包括输出响应于磁场的信号的磁检测器（101）和具有放置磁检测器（101）的空腔（111）的磁性体（110）。 磁检测器（101）放置在磁性物质（110）的空腔（111）中。 基于磁性物质的形状的第一退磁系数中的至少一个，将要测量的磁场（H）和施加到磁​​性检测器（101）的磁场之间的比率设定为特定值（ 110）和取决于空腔（111）的形状的第二去磁因子。 磁传感器装置还包括向磁检测器（101）施加负反馈磁场的反馈线圈（112）和将参考交变磁场施加到磁检测器（101）的参考磁场线圈（113），用于 控制磁检测器（101）的性质。

公开(公告)号：US4974045A

公开(公告)日：1990-11-27

申请号：US318604

申请日：1989-03-03

申请人： Yoshihisa Okita

发明人： Yoshihisa Okita

IPC分类号： H01L21/331 ,  H01L29/73 ,  H01L29/732

CPC分类号： H01L29/66287 ,  H01L29/7317 ,  H01L29/732

摘要： A bi-polar transistor structure in a superhigh speed logic integrated circuit, and a process for producing the same are disclosed. The transistor has a substantially coaxial symmetric structure. Single crystal active layers as base and collector regions have peripheries surrounded wholly or partially by respective polycrystalline electrode layers. The polysilicon electrodes have lateral portions and downward depending portions that connect to single crystal layers. The polycrystalline electrode layers are separated from each other by insulation. One process for producing the structure uses only thin film forming techniques and etching techniques to dispose the active layers, an emitter electrode layer, parts of the other electrode layers and parts of the insulating layers inside a recess formed in an insulating layer formed on a substrate. Another process uses a photoetching technique by which polycrystalline layers for base and collector electrodes are patterned. Around the patterned polycrystalline electrode, side wall insulating layers are formed in the respective later steps.

公开(公告)号：US06353543B2

公开(公告)日：2002-03-05

申请号：US09858341

申请日：2001-05-14

申请人： Kazuyuki Itoh ,  Yoshihisa Okita ,  Katsuaki Tanaka

发明人： Kazuyuki Itoh ,  Yoshihisa Okita ,  Katsuaki Tanaka

IPC分类号： H02M3335

CPC分类号： H02M7/5387 ,  H02M3/1584 ,  H02M3/33576

摘要： A switching circuit for a power conversion apparatus capable of reducing conduction loss to provide a higher efficiency, and achieving downsizing and weight-reduction and higher driving frequency based on the improved efficiency is disclosed. A driving transistor is connected to a switching main transistor to supply a driving power for ON-OFF driving thereto, and an auxiliary power source composed of a current transformer is provided between the main transistor and the driving transistor. An auxiliary transistor having a lower switching loss than that of the main transistor is connected in parallel with the main transistor to form a main switch in combination with the main transistor. A current-driven type transistor serves as the main transistor, and voltage-driven type transistors serve as both of the driving transistor and the auxiliary transistor. The auxiliary transistor is adapted to be driven at a higher speed than that of the main transistor when the main transistor is turned on, and adapted to be driven at a lower speed than that of the main transistor when the main transistor is turned off.

摘要翻译： 公开了一种用于能够降低传导损耗以提供更高效率并且基于提高的效率实现小型化和减轻重量并且实现更高驱动频率的功率转换装置的开关电路。 驱动晶体管连接到开关主晶体管以提供用于导通驱动的驱动电源，并且在主晶体管和驱动晶体管之间设置由电流互感器组成的辅助电源。 具有比主晶体管低的开关损耗的辅助晶体管与主晶体管并联连接以与主晶体管组合形成主开关。 电流驱动型晶体管用作主晶体管，电压驱动型晶体管用作驱动晶体管和辅助晶体管两者。 当主晶体管导通时，辅助晶体管适于以比主晶体管更高的速度被驱动，并且当主晶体管截止时，辅助晶体管适于以比主晶体管低的速度被驱动。

公开(公告)号：US06351107B1

公开(公告)日：2002-02-26

申请号：US09612343

申请日：2000-07-06

申请人： Yoshihisa Okita

发明人： Yoshihisa Okita

IPC分类号： G05F140

CPC分类号： H03K17/04213

摘要： In a power conversion device including a current control semiconductor switching element, a driving device of the aforementioned switching element is disclosed. The driving device comprises an output main line connected to a base or gate of the switching element, an output return line connected to an emitter or source. A collector current detecting device for detecting a collector current or drain current, and a base current control device for controlling a base current or gate current are provided. The base current control device controls the base current to reduce the sum of conduction loss and drive power in the switching element in accordance with a collector current signal from the collector current detecting device.

摘要翻译： 在包括电流控制半导体开关元件的电力转换装置中，公开了上述开关元件的驱动装置。 驱动装置包括连接到开关元件的基极或栅极的输出主线，连接到发射极或源极的输出返回线。 提供了用于检测集电极电流或漏极电流的集电极电流检测装置和用于控制基极电流或栅极电流的基极电流控制装置。 基极电流控制装置根据集电极电流检测装置的集电极电流信号，控制基极电流，以减小开关元件的导通损耗和驱动功率之和。

公开(公告)号：US6154379A

公开(公告)日：2000-11-28

申请号：US353879

申请日：1999-07-15

申请人： Yoshihisa Okita

发明人： Yoshihisa Okita

IPC分类号： H02M7/48 ,  H02M1/12 ,  H02M7/44

CPC分类号： H02M7/48 ,  H02M2007/4803

摘要： The electric power conversion device includes an AC section, a DC section, a switching section connected between the AC section and the DC section for making power conversion by switching operation, and a control section for control the switching section. In the DC section is installed a ripple detection device for detecting a ripple component emerging into the DC side and for generating a ripple detection signal. When the DC component is included in the output current of the AC section, a ripple component having the same frequency with the AC frequency of the AC section output current is superimposed in the DC section. The ripple detection device is installed in the DC section, and thereby the ripple component emerging into the DC section is detected by the ripple detection device as a reflection of the DC offset included in the output current. The control section receives the ripple detection signal from the ripple detection device, generates the DC component compensation signal for controlling the DC component included in the AC side current based on the ripple detection signal, and controls the switching section by the control signal including the DC component compensation signal to compensate the DC offset.

摘要翻译： 电力转换装置包括AC部分，DC部分，连接在AC部分和通过切换操作进行电力转换的DC部分之间的切换部分和用于控制切换部分的控制部分。 在直流部分安装有纹波检测装置，用于检测出现在直流侧的纹波分量并产生纹波检测信号。 当直流分量包含在AC部分的输出电流中时，具有与AC部分输出电流的交流频率相同频率的脉动分量被叠加在DC部分中。 波纹检测装置安装在直流部分中，由此纹波检测装置检测出出现在直流部分中的脉动分量作为包括在输出电流中的直流偏移的反映。 控制部接收来自纹波检测装置的纹波检测信号，根据纹波检测信号生成用于控制包含在AC侧电流中的直流成分的直流成分补偿信号，并通过包含DC的控制信号来控制切换部 分量补偿信号来补偿直流偏移。