Abstract:
Embodiments of the present invention provide a semiconductor structure having a strain relaxed buffer, and method of fabrication. A strain relaxed buffer is disposed on a semiconductor substrate. A silicon region and silicon germanium region are disposed adjacent to each other on the strain relaxed buffer. An additional region of silicon or silicon germanium provides quantum well isolation.
Abstract:
Systems and methods are provided for managing storage cache resources among all servers within the cluster storage environment. A method includes partitioning a main cache of a corresponding node into a global cache and a local cache, sharing each global cache of each node with other ones of the nodes of the multiple nodes, and dynamically adjusting a ratio of an amount of space of the main cache making up the global cache and an amount of space of the main cache making up the local cache, based on access latency and cache hit over a predetermined period of time of each of the global cache and the local cache.