Abstract:
Deep via technology is used to construct an integrated silicon cantilever and cavity oriented in a vertical plane which creates an electrostatically-switched MEMS switch in a small wafer area. Another embodiment is a small wafer area electrostatically-switched, vertical-cantilever MEMS switch wherein the switch cavity is etched within a volume defined by walls grown internally within a silicon substrate using through vias.
Abstract:
A Microelectromechanical systems (MEMS)-based N×M cross-point switch, a MEMS-based system, and a method provide MEMS-based cross-point electrical switching for a Layer 0 flow-based switch. The N×M cross-point switch includes N inputs each at least 10 Gbps, M output each at least 10 Gbps, a plurality of Radio Frequency (RF) MEMS switches selectively interconnecting the N inputs to the M outputs; and control and addressing circuitry to selectively control the plurality of RF MEMS switches to switch each of the N inputs to a corresponding output of the M outputs. The systems and methods provide an electrical switching fabric for flow-based switching of wavelengths that can be part of a Reconfigurable Electrical Add/Drop Multiplexer (READM) with similar functionality as a ROADM in the electronic domain.