Field emission flat lamp with strip cathode structure and strip gate structure in the same plane
    11.
    发明授权
    Field emission flat lamp with strip cathode structure and strip gate structure in the same plane 失效
    场致发射平板灯,带阴极结构,带状栅极结构在同一平面

    公开(公告)号:US07602114B2

    公开(公告)日:2009-10-13

    申请号:US11309008

    申请日:2006-06-08

    IPC分类号: H01J63/04

    摘要: A cathode plate including a substrate, a cathode structure, a gate structure and emission sources is provided. The cathode structure and the gate structure are disposed on the substrate. The emission sources are arranged regularly on the cathode structure. A field emission flat lamp including said cathode plate, an anode plate and a sealant is provided. The sealant is disposed between and seals the cathode plate and the anode plate. Since the volume of each emission source is small, the bubbles resided inside the emission sources can be reduced, such that the qualities of the field emission flat lamp and the cathode plate thereof can be improved.

    摘要翻译: 提供了包括基板,阴极结构,栅极结构和发射源的阴极板。 阴极结构和栅极结构设置在基板上。 发射源规则地排列在阴极结构上。 提供了包括所述阴极板,阳极板和密封剂的场致发射平板灯。 密封剂设置在阴极板和阳极板之间并密封。 由于每个发光源的体积小,因此可以减少发射源内部的气泡,从而可以提高场发射平板灯及其阴极板的质量。

    Field emission device, display adopting the same and method of manufacturing the same
    12.
    发明授权
    Field emission device, display adopting the same and method of manufacturing the same 失效
    场发射装置,采用相同的显示器及其制造方法

    公开(公告)号:US07508124B2

    公开(公告)日:2009-03-24

    申请号:US11455193

    申请日:2006-06-19

    IPC分类号: H01J1/62 H01J63/04

    摘要: A field emission device comprises a glass substrate, an emitter electrode formed on the glass substrate, a carbon nanotube (CNT) emitter formed on the emitter electrode, and a gate stack formed around the CNT emitter for extracting electron beams from the CNT emitter and focusing the extracted electron beams onto a given position. The gate stack includes a mask layer covering the emitter electrode and provided around the CNT emitter, a gate insulating layer formed on the mask layer to a predetermined height, a mirror electrode formed on an inclined plane of the gate insulating layer, a gate electrode formed on the gate insulating layer and spaced apart from the mirror electrode, and a focus gate insulating layer and a focus gate electrode sequentially formed on the gate electrode. The field emission device is manufactured and employed in a display device in accordance with the present invention.

    摘要翻译: 场发射器件包括玻璃衬底,形成在玻璃衬底上的发射电极,在发射极上形成的碳纳米管(CNT)发射极,以及形成在CNT发射器周围的用于从CNT发射器提取电子束的聚焦 提取的电子束到给定位置。 栅极堆叠包括覆盖发射极并且设置在CNT发射极周围的掩模层,在掩模层上形成预定高度的栅极绝缘层,形成在栅极绝缘层的倾斜平面上的反射镜电极,形成的栅电极 在栅绝缘层上并且与镜电极间隔开,以及顺序形成在栅电极上的聚焦栅极绝缘层和聚焦栅电极。 在根据本发明的显示装置中制造并采用场致发射装置。

    LOW VOLTAGE ELECTRON SOURCE WITH SELF ALIGNED GATE APERTURES, FABRICATION METHOD THEREOF, AND DEVICES USING THE ELECTRON SOURCE
    14.
    发明申请
    LOW VOLTAGE ELECTRON SOURCE WITH SELF ALIGNED GATE APERTURES, FABRICATION METHOD THEREOF, AND DEVICES USING THE ELECTRON SOURCE 失效
    具有自对准门极的低电压电源,其制造方法和使用电子源的器件

    公开(公告)号:US20090039754A1

    公开(公告)日:2009-02-12

    申请号:US11929615

    申请日:2007-10-30

    申请人: Zhidan L. Tolt

    发明人: Zhidan L. Tolt

    IPC分类号: H01J1/304

    摘要: A method of fabricating an electron source having a self-aligned gate aperture is disclosed. A substrate is deposited on a first conductive layer. Over the first conductive layer an emitter layer is deposited. The emitter layer includes one or a plurality of spaced-apart nano-structures and a solid surface with nano-structures protruding above the surface. An insulator is conformally deposited over the emitter layer surface and forms a post from each protruding nano-structure. A second conductive layer is deposited over the insulator and the second conductive layer and the insulator are removed from the nano-structures such that apertures are formed in the second conductive layer and at least the ends of the nano-structures are exposed at the centers of said apertures.

    摘要翻译: 公开了一种制造具有自对准栅极孔径的电子源的方法。 衬底沉积在第一导电层上。 在第一导电层上沉积发射极层。 发射极层包括一个或多个间隔开的纳米结构和具有突出在表面上方的纳米结构的固体表面。 绝缘体共形沉积在发射极层表面上,并从每个突出的纳米结构形成柱。 第二导电层沉积在绝缘体上,并且第二导电层和绝缘体从纳米结构中移除,使得在第二导电层中形成孔,并且纳米结构的至少端部暴露在 所述孔。

    Electron emission device with auxiliary electrode and manufacturing method thereof
    15.
    发明授权
    Electron emission device with auxiliary electrode and manufacturing method thereof 失效
    具有辅助电极的电子发射装置及其制造方法

    公开(公告)号:US07486012B2

    公开(公告)日:2009-02-03

    申请号:US10996761

    申请日:2004-11-22

    IPC分类号: H01J1/62 H01J63/04

    摘要: An electron emission device includes a first substrate and a second substrate provided opposing one another with a predetermined gap therebetween. A first electrode is formed on the first substrate. A second electrode is formed on the first substrate crossing the first electrode. Each second electrode includes an auxiliary electrode and a main electrode formed to a thickness that is less than a thickness of the auxiliary electrode. An insulation layer is interposed between the at least first electrode and second electrodes. At least one anode electrode is formed on the second substrate; and phosphor layers are formed on one surface of the at least one anode electrode.

    摘要翻译: 电子发射器件包括第一衬底和第二衬底,第一衬底和第二衬底彼此相对地设置,其间具有预定的间隙。 第一电极形成在第一基板上。 在与第一电极交叉的第一基板上形成第二电极。 每个第二电极包括辅助电极和形成为小于辅助电极的厚度的厚度的主电极。 在至少第一电极和第二电极之间插入绝缘层。 在第二基板上形成至少一个阳极电极; 并且在所述至少一个阳极电极的一个表面上形成荧光体层。

    LOW VOLTAGE ELECTRON SOURCE WITH SELF ALIGNED GATE APERTURES, FABRICATION METHOD THEREOF, AND LUMINOUS DISPLAY USING THE ELECTRON SOURCE
    16.
    发明申请
    LOW VOLTAGE ELECTRON SOURCE WITH SELF ALIGNED GATE APERTURES, FABRICATION METHOD THEREOF, AND LUMINOUS DISPLAY USING THE ELECTRON SOURCE 失效
    具有自对准栅极孔径的低电压电源,其制造方法和使用电子源的发光显示器

    公开(公告)号:US20080261337A1

    公开(公告)日:2008-10-23

    申请号:US11927323

    申请日:2007-10-29

    申请人: Zhidan Li Tolt

    发明人: Zhidan Li Tolt

    IPC分类号: H01L21/02

    摘要: A method of fabricating an electron source having a self-aligned gate aperture is disclosed. A substrate is deposited on a first conductive layer. Over the first conductive layer an emitter layer is deposited. The emitter layer includes one or a plurality of spaced-apart nano-structures and a solid surface with nano-structures protruding above the surface. An insulator is conformally deposited over the emitter layer surface and forms a post from each protruding nano-structure. A second conductive layer is deposited over the insulator and the second conductive layer and the insulator are removed from the nano-structures such that apertures are formed in the second conductive layer and at least the ends of the nano-structures are exposed at the centers of said apertures.

    摘要翻译: 公开了一种制造具有自对准栅极孔径的电子源的方法。 衬底沉积在第一导电层上。 在第一导电层上沉积发射极层。 发射极层包括一个或多个间隔开的纳米结构和具有突出在表面上方的纳米结构的固体表面。 绝缘体共形沉积在发射极层表面上,并从每个突出的纳米结构形成柱。 第二导电层沉积在绝缘体上,并且第二导电层和绝缘体从纳米结构中移除,使得在第二导电层中形成孔,并且纳米结构的至少端部暴露在 所述孔。

    Field emission device and field emission display using the same
    18.
    发明授权
    Field emission device and field emission display using the same 失效
    场发射装置和场发射显示使用相同

    公开(公告)号:US07382090B2

    公开(公告)日:2008-06-03

    申请号:US11130264

    申请日:2005-05-17

    IPC分类号: H01J17/30

    摘要: A field emission device and a field emission display (FED) using the same and a method of making the field emission device. The FED includes a glass substrate, a layer of a material formed on the glass substrate and having a concave portion, a cathode electrode formed on the material layer and also having a concave portion, electron emitters formed on the concave portion of the cathode electrode, a gate insulating layer formed on the cathode electrode and having a cavity communicating with the concave portion, and a gate electrode formed on the gate insulating layer and having a gate aperture aligned with the cavity.

    摘要翻译: 场发射器件和使用其的场致发射显示器(FED)以及制造场致发射器件的方法。 FED包括玻璃基板,形成在玻璃基板上的具有凹部的材料层,形成在材料层上的阴极,还具有凹部,形成在阴极电极的凹部上的电子发射体, 形成在所述阴极电极上且具有与所述凹部连通的空腔的栅极绝缘层,以及形成在所述栅极绝缘层上并具有与所述空腔对准的栅极孔的栅电极。

    High Resolution Cathode Structure
    19.
    发明申请
    High Resolution Cathode Structure 失效
    高分辨率阴极结构

    公开(公告)号:US20080084152A1

    公开(公告)日:2008-04-10

    申请号:US11632944

    申请日:2004-10-26

    IPC分类号: H01J3/00 H01J9/02

    摘要: A triode type cathode structure of an FED screen arranged in rows and columns, including a first lower metallization level forming cathodes, an electrical insulating layer, a second higher metallization level forming extraction grids, openings formed in the second metallization level and in the electrical insulating layer, and lines of electron emission arranged in the openings, which lines are parallel to the direction of the rows of the screen.

    摘要翻译: 布置成行和列的FED屏幕的三极管型阴极结构,包括形成阴极的第一下部金属化水平,电绝缘层,形成提取栅极的第二较高金属化水平,在第二金属化水平和电绝缘中形成的开口 层和布置在开口中的电子发射线,这些线平行于屏幕的行的方向。

    Triode type field emission display with high resolution
    20.
    发明授权
    Triode type field emission display with high resolution 有权
    具有高分辨率的三极型场发射显示

    公开(公告)号:US07348717B2

    公开(公告)日:2008-03-25

    申请号:US11092494

    申请日:2005-03-29

    IPC分类号: H01J1/62

    CPC分类号: H01J31/123 H01J3/022

    摘要: A triode type field emission display in accordance with the invention includes: a cathode electrode (12) formed on an insulation substrate (10); an insulation layer (13) formed on the cathode electrode; a gate electrode (14) formed on the insulation layer; a number of emitters (16); and an anode electrode (18) with a phosphor layer (19) positioned over the gate electrode. The emitters are distributed on portions of the cathode electrode at two sides of the insulation layer, and a height of the emitters is less than a thickness of the insulation layer. The emitters are capable of emitting electrons from tips thereof, and the emitted electrons are focused on the phosphor layer by an electric field generated by the gate electrode.

    摘要翻译: 根据本发明的三极管型场发射显示器包括:形成在绝缘基板(10)上的阴极电极(12); 形成在所述阴极上的绝缘层(13) 形成在绝缘层上的栅电极(14) 一些发射器(16); 以及具有位于栅电极之上的荧光体层(19)的阳极电极(18)。 发射体分布在绝缘层两侧的阴极部分上,发射体的高度小于绝缘层的厚度。 发射体能够从其尖端发射电子,并且发射的电子通过由栅电极产生的电场聚焦在荧光体层上。