Method for low-temperature sharpening of silicon-based field emitter tips
    11.
    发明申请
    Method for low-temperature sharpening of silicon-based field emitter tips 有权
    硅基场发射器尖端的低温锐化方法

    公开(公告)号:US20020187714A1

    公开(公告)日:2002-12-12

    申请号:US09880160

    申请日:2001-06-12

    CPC classification number: H01J9/025

    Abstract: A low temperature process for silicon-based field emitter tip sharpening. A rough silicon-based field emitter tip is exposed to xenon difluoride gas in a process chamber to carry out low-temperature, isotropic etching of the rough silicon-based field emitter tip to produce a final, sharpened field emitter tip.

    Abstract translation: 硅基场发射极尖锐化的低温工艺。 粗糙的硅基场发射极尖端在处理室中暴露于氙气二氧化物气体,以对粗糙的硅基场发射极尖端进行低温,各向同性蚀刻,以产生最终的尖锐的场致发射极尖端。

    Field emission arrays and method of fabricating emitter tips and corresponding resistors thereof with a single mask
    12.
    发明申请
    Field emission arrays and method of fabricating emitter tips and corresponding resistors thereof with a single mask 失效
    场致发射阵列和用单个掩模制造发射极尖端及其对应的电阻器的方法

    公开(公告)号:US20020005694A1

    公开(公告)日:2002-01-17

    申请号:US09942222

    申请日:2001-08-29

    Inventor: Ammar Derraa

    CPC classification number: H01J9/025

    Abstract: A field emission array includes a plurality of pixels. Each pixel includes at least one resistor, at least one emitter tip overlying each resistor, and at least one substantially vertically oriented conductive line positioned laterally adjacent each resistor. The pixels may be arranged in substantially parallel lines. Adjacent pixels are separated and electrically isolated from one another by recessed areas located therebetween. Each conductive line is located within a recessed area. The conductive lines of a field emission array that includes lines of pixels may contact the resistors of each pixel of the corresponding line of pixels. Base portions of at least some of the emitter tips of the field emission array may overlie a portion of the conductive line that corresponds to the pixel of which such emitter tips are a part. Field emission displays that include such field emission arrays are also disclosed.

    Abstract translation: 场致发射阵列包括多个像素。 每个像素包括至少一个电阻器,覆盖每个电阻器的至少一个发射极尖端以及横向邻近每个电阻器定位的至少一个基本垂直取向的导电线路。 像素可以以基本平行的线排列。 相邻的像素被分离并且通过位于其间的凹陷区域彼此电隔离。 每个导线位于凹陷区域内。 包括像素线的场发射阵列的导线可以接触相应像素线的每个像素的电阻。 场发射阵列的至少一些发射极尖端的基极部分可以覆盖导电线的对应于其发射极尖端为其一部分的像素的部分。 还公开了包括这种场致发射阵列的场致发射显示器。

    Method to increase the emission current in FED displays through the surface modification of the emitters
    13.
    发明申请
    Method to increase the emission current in FED displays through the surface modification of the emitters 审中-公开
    通过发射体的表面改性来增加FED显示器中的发射电流的方法

    公开(公告)号:US20040266308A1

    公开(公告)日:2004-12-30

    申请号:US10730041

    申请日:2003-12-09

    Inventor: Kanwal K. Raina

    CPC classification number: H01J9/025

    Abstract: A system and method for fabricating a FED device is disclosed. The system and method provide for use of PECVD hydrogenation followed by nitrogen plasma treatment of the tip of the current emitter of the FED device. The use of this process greatly reduces the native oxides in the tip of the current emitter. Such native oxides function as undesirable insulators degrading current emission. By reducing the amount of oxides in the tip, this invention provides for an increase in the current emission of the FED device.

    Abstract translation: 公开了一种用于制造FED装置的系统和方法。 该系统和方法提供使用PECVD氢化,然后对FED装置的电流发射器的尖端进行氮等离子体处理。 该方法的使用大大降低了电流发射极尖端的天然氧化物。 这种天然氧化物起到降低电流发射的不期望的绝缘体的作用。 通过减少尖端中的氧化物的量,本发明提供了FED装置的电流发射的增加。

    Electron emitter, method for manufacturing the same, electro-optical device, and electronic apparatus
    14.
    发明申请
    Electron emitter, method for manufacturing the same, electro-optical device, and electronic apparatus 审中-公开
    电子发射体,其制造方法,电光装置和电子装置

    公开(公告)号:US20040245903A1

    公开(公告)日:2004-12-09

    申请号:US10809203

    申请日:2004-03-25

    Inventor: Toshimitsu Hirai

    CPC classification number: H01J9/027

    Abstract: A method is provided for forming pairs of element electrodes and conductive layers between the element electrodes on a substrate. The method includes a step of forming banks surrounding electrode-forming regions for forming the element electrodes and conductive layer-forming regions for forming the conductive layers; a step of discharging first droplets toward the electrode-forming regions; and a step of discharging second droplets toward the conductive layer-forming regions.

    Abstract translation: 提供了一种在衬底上的元件电极之间形成元件电极对和导电层的方法。 该方法包括:形成围绕用于形成元件电极的电极形成区域和用于形成导电层的导电层形成区域的堤; 向所述电极形成区域排出第一液滴的步骤; 以及向导电层形成区域排出第二液滴的步骤。

    ELECTRODE MATERIALS FOR ELECTRIC LAMPS AND METHODS OF MANUFACTURE THEREOF
    15.
    发明申请
    ELECTRODE MATERIALS FOR ELECTRIC LAMPS AND METHODS OF MANUFACTURE THEREOF 失效
    电动物质电极材料及其制造方法

    公开(公告)号:US20040239229A1

    公开(公告)日:2004-12-02

    申请号:US10452037

    申请日:2003-05-30

    CPC classification number: H01J1/146 H01J1/14 H01J61/0677 H01J61/0737

    Abstract: An electron emissive composition comprises a barium tantalate composition of the formula (Ba1-x, Cax, Srp, Dq)6(Ta1-y, Wy, Et, Fu, Gv, Caw)2O(11nullnull) where null is an amount of about 0 to about null3; and wherein D is either an alkali earth metal ion or an alkaline earth ion; E, F, and G, are alkaline earth ions and/or transition metal ion; x is an amount of up to about 0.7; y is an amount of up to about 1; p and q are amounts of up to about 0.3; and t is an amount of about 0.05 to about 0.10, u is an amount of up to about 0.5, v is an amount of up to about 0.5 and w is an amount of up to about 0.25. A method for manufacturing an electron emissive composition comprises blending a barium tantalate composition with a binder; and sintering the barium tantalate composition with the binder at a temperature of about 1000null C. to about 1700null C.

    Abstract translation: 电子发射组合物包含式(Ba1-x,Cax,Srp,Dq)6(Ta1-y,Wy,Et,Fu,Gv,Caw)2O(11±δ)的钽酸钡组合物,其中δ是量 约0至约-3; 并且其中D是碱土金属离子或碱土金属离子; E,F和G是碱土离子和/或过渡金属离子; x是高达约0.7的量; y是高达约1的量; p和q是高达约0.3的量; 并且t为约0.05至约0.10的量,u为至多约0.5的量,v为至多约0.5的量,w为高达约0.25的量。 制造电子发射组合物的方法包括将钡钽酸盐组合物与粘合剂混合; 并在约1000℃至约1700℃的温度下用粘合剂烧结钽酸钡组合物。

    Plasma display panel, back and front substrates for plasma display panel, and coated metal particle for forming electrode
    16.
    发明申请
    Plasma display panel, back and front substrates for plasma display panel, and coated metal particle for forming electrode 审中-公开
    等离子体显示面板,等离子体显示面板的背面和前面基板以及用于形成电极的涂覆金属颗粒

    公开(公告)号:US20040169470A1

    公开(公告)日:2004-09-02

    申请号:US10477186

    申请日:2003-11-10

    Inventor: Kazuyoshi Inoue

    CPC classification number: H01J11/22 H01J9/02 H01J11/12 H01J2211/225

    Abstract: In a plasma display panel, a back substrate has a first metal electrode on a back base substrate, and a front substrate has a transparent electrode and a second metal electrode on a front base substrate. The front substrate is arranged opposite to the back substrate. At least one of the first metal electrode and the second metal electrode being formed by e electrophotographic printing. At this time, coated metal particles are used as toner, which particles are formed by coating metal particles having an average diameter of 0.1 to 20 nullm with thermoplastic resin. The electrophotographic printing enables manufacture of plasma display panels and the like with less waste of materials.

    Abstract translation: 在等离子体显示面板中,后基板在后基板上具有第一金属电极,前基板在前基板上具有透明电极和第二金属电极。 前基板布置成与背基板相对。 第一金属电极和第二金属电极中的至少一个通过电子照相印刷形成。 此时,涂覆的金属颗粒用作调色剂,该颗粒通过用热塑性树脂涂覆平均直径为0.1至20μm的金属颗粒而形成。 电子照相印刷能够以更少的材料浪费制造等离子体显示面板等。

    Field emission arrays and method of fabricating same to optimize the size of grid openings and to minimize the occurrence of electrical shorts
    17.
    发明申请
    Field emission arrays and method of fabricating same to optimize the size of grid openings and to minimize the occurrence of electrical shorts 失效
    场致发射阵列及其制造方法,以优化栅极开口的尺寸并最小化电短路的发生

    公开(公告)号:US20040023592A1

    公开(公告)日:2004-02-05

    申请号:US10615548

    申请日:2003-07-08

    Inventor: Ammar Derraa

    CPC classification number: H01J9/025

    Abstract: A method for fabricating a field emission structure is disclosed. A first dielectric layer and a second material layer are disposed over a substrate and at least one emitter tip thereon. Planarization of the second layer exposes regions of the first layer that cover the emitter tip, which regions may then be removed through the second layer. Substantially Substantial removal of the second layer reduces any conductive defects that protrude from a surface of the first layer. A third, dielectric layer and fourth, grid layer are then formed. Planarization of the fourth layer forms grid openings and exposes dielectric material of the third layer which overlies the emitter tip. Dielectric material of one or both underlying layers may then be removed to expose the outer surfaces of the emitter tip.

    Abstract translation: 公开了一种用于制造场发射结构的方法。 第一介电层和第二材料层设置在衬底上并且其上具有至少一个发射极尖端。 第二层的平面化暴露了覆盖发射极尖端的第一层的区域,然后可以通过第二层去除哪些区域。 基本上大量地去除第二层减少从第一层的表面突出的任何导电缺陷。 然后形成第三个介电层和第四个栅格层。 第四层的平面化形成网格开口并暴露位于发射极尖端的第三层的介电材料。 然后可以去除一个或两个下层的介电材料以暴露发射极尖端的外表面。

    Method of making nanotube-based material with enhanced electron field emission properties
    19.
    发明申请
    Method of making nanotube-based material with enhanced electron field emission properties 有权
    制备具有增强的电子场发射特性的纳米管基材料的方法

    公开(公告)号:US20020193040A1

    公开(公告)日:2002-12-19

    申请号:US09881684

    申请日:2001-06-18

    Inventor: Otto Z. Zhou

    Abstract: A method of reducing electronic work function, reducing threshold field emission values, converting semiconducting behavior to metallic behavior, increasing the electron density state at the Fermi level, and increasing electron emission site density, of nanostructure or nanotube-containing material, the method including: forming openings in the nanotube-containing material; introducing a foreign species such as an alkali metal into at least some of the openings; and closing the openings, thereby forming capsules filled with the foreign species, and forming field emission cathode and flat panel displays using these capsules.

    Abstract translation: 一种减少电子功函数,降低阈值场发射值,将半导体行为转换为金属行为,增加费米能级电子密度状态,增加纳米结构或含纳米管材料的电子发射位点密度的方法,该方法包括: 在含纳米管的材料中形成开口; 将诸如碱金属的外来物质引入到至少一些开口中; 并关闭开口,从而形成填充有异物的胶囊,并使用这些胶囊形成场发射阴极和平板显示器。

    Field emission cathode, electron emission device and electron emission device manufacturing method
    20.
    发明申请
    Field emission cathode, electron emission device and electron emission device manufacturing method 失效
    场发射阴极,电子发射装置和电子发射装置的制造方法

    公开(公告)号:US20010005112A1

    公开(公告)日:2001-06-28

    申请号:US09740791

    申请日:2000-12-21

    CPC classification number: H01J9/025 H01J1/304

    Abstract: The present invention is intended to efficiently concentrate an electric field and to improve electron emission efficiency in a field emission cathode constituting a flat display device. A field emission cathode constituting a flat display device is constituted to have an electron emission section arranged to face an electron applied surface. At least the electron emission section is formed out of conductive, thin plate-like fine particles. A substance having a work function of 2 to 3 nulleVnull is bonded on the surfaces of the thin plate-like fine particles.

    Abstract translation: 本发明旨在有效地集中电场并提高构成平面显示装置的场发射阴极中的电子发射效率。 构成平面显示装置的场发射阴极被构成为具有面向电子施加面的电子发射部。 至少电子发射部分由导电的薄板状细颗粒形成。 功能为2〜3 [eV]的物质被粘合在薄板状微粒的表面上。

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