公开(公告)号：US20250079393A1

公开(公告)日：2025-03-06

申请号：US18748354

申请日：2024-06-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Cheon PARK ,  Un-Byoung KANG ,  Ku Young KIM ,  Jun Woo MYUNG ,  Seung-Jin LEE ,  Ji-Seok HONG

IPC: H01L23/00 ,  H01L23/28 ,  H01L23/48 ,  H01L23/498 ,  H01L25/065 ,  H10B80/00

Abstract: A semiconductor package includes: a first semiconductor chip including a first substrate and a first through electrode passing through the first substrate, wherein the first substrate has a first active surface and a first non-active surface; a chip structure including a plurality of second semiconductor chips stacked on the first semiconductor chip, wherein each second semiconductor chip includes a second substrate and a second through electrode passing through the second substrate; and a third semiconductor chip disposed on the chip structure, and including a third substrate, wherein the first substrate has a first width and a first thickness, wherein the second substrate has a second width and a second thickness, and the third substrate has a third width and a third thickness, wherein the third thickness is thicker than the second thickness, and the third width is greater than the second width.

公开(公告)号：US20250079382A1

公开(公告)日：2025-03-06

申请号：US18807488

申请日：2024-08-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeean Lee ,  Dongwon Kang ,  Dahee Kim ,  Changyeon Song ,  Sunguk Lee

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/538

Abstract: Provided is a semiconductor package including a lower package substrate including lower insulating layers, a first semiconductor device mounted on the lower package substrate, a core layer on the lower package substrate to be laterally spaced apart from the first semiconductor device, an encapsulation material surrounding the first semiconductor device and covering an upper portion of the core layer, an upper package substrate disposed on the encapsulation material, the upper package substrate including a first upper redistribution layer and a second upper redistribution layer; wherein a first line width and a first line spacing of a first fine pattern of the first upper redistribution pattern are greater than or equal to a corresponding second line width and a corresponding second line spacing of a second fine pattern of the second upper redistribution pattern, respectively.

公开(公告)号：US20250079310A1

公开(公告)日：2025-03-06

申请号：US18806236

申请日：2024-08-15

Applicant: SAMSUNG ELECTRONICS CO.,LTD.

Inventor： Hoyoung TANG ,  Taehyung KIM

IPC: H01L23/528 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: An integrated circuit includes: a backside wiring layer on a back side of a substrate, the backside wiring layer including a first backside pattern and a second backside pattern isolated from each other; and a power gating switch on a front side of the substrate, the power gating switch connected to the first and second backside patterns. The power gating switch includes: a first source/drain region connected to the first backside pattern, and configured to receive a first supply voltage from the first backside pattern; a gate line structure configured to receive a power gating signal; and a second source/drain region connected to the second backside pattern, and configured to receive a power signal from the first source/drain region based on the power gating signal.

公开(公告)号：US20250079211A1

公开(公告)日：2025-03-06

申请号：US18653168

申请日：2024-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sewoong Lee ,  Jaeho Jang ,  Yohwan Joo ,  Jinkyou Choi

IPC: H01L21/67 ,  G06N3/045

Abstract: An anomaly detection method includes receiving data regarding semiconductor process variables, generating an anomaly detection model through a convolution algorithm and a transformer algorithm, classifying the data by using the generated anomaly detection model, and detecting, based upon the classified data, an anomaly associated with the semiconductor process variables.

公开(公告)号：US20250079016A1

公开(公告)日：2025-03-06

申请号：US18814096

申请日：2024-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Korosh VATANPARVAR ,  Jeremy Speth ,  Nafiul Rashid ,  Li Zhu ,  Migyeong Gwak ,  Jilong Kuang ,  Jun Gao

IPC: G16H50/30 ,  G06V10/25 ,  G06V10/32 ,  G06V10/82 ,  G06V40/16 ,  G16H50/20

Abstract: A method performed by at least one processor includes obtaining an image of a subject; preprocessing the image of the subject; inputting the preprocessed image into a machine learning model trained in accordance with a first frequency distribution corresponding to a first ground truth obtained from one or more sensors performing a vital measurement on one or more test subjects; and obtaining, from the machine learning model, an estimate of a signal corresponding to the vital measurement of the subject.

公开(公告)号：US20250078309A1

公开(公告)日：2025-03-06

申请号：US18950783

申请日：2024-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chao ZHANG ,  Weiming LI ,  Qiang WANG ,  Sunghoon HONG ,  Wooshik KIM

IPC: G06T7/70 ,  G06N3/045 ,  G06T7/73 ,  G06T19/00 ,  G06T19/20 ,  G06V10/44 ,  G06V10/764 ,  G06V20/10

Abstract: An electronic device for estimating object information and generating a virtual object and a method of operating the electronic device are disclosed. The method includes obtaining an image, obtaining a class feature, a pose feature, and a relationship feature of an object included in the image, correcting each of the class feature, the pose feature, and the relationship feature using any combination of any two or more of the class feature, the pose feature, and the relationship feature of the object, and obtaining class information, pose information, and relationship information of the object based on the corrected class feature, the corrected pose feature, and the corrected relationship feature, respectively.

公开(公告)号：US20250077979A1

公开(公告)日：2025-03-06

申请号：US18952216

申请日：2024-11-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Da LI ,  Ondrej BOHDAL ,  Timothy HOSPEDALES ,  Xu HU

IPC: G06N20/00 ,  H04L67/04 ,  H04L67/306

Abstract: Broadly speaking, the present techniques generally relate a method and apparatus for on-device personalisation of artificial intelligence models. In particular, the present application relates to a computer-implemented method for performing personalised visual or audio analysis on an electronic device using a trained machine learning, ML, model.

公开(公告)号：US20250077436A1

公开(公告)日：2025-03-06

申请号：US18748359

申请日：2024-06-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tung Pham ,  Andrew CHANG

IPC: G06F12/0862

Abstract: A method and apparatus are provided for performing early prefetch in a memory system. A method includes receiving a data request including an address of a data page stored in a memory device; storing the data request at a first position in a request queue; accessing the data request stored at the first position and performing a first lookup operation for the data request; updating the device request queue, which includes moving the data request stored at the first position to a second position in the request queue; and accessing the data request stored at the second position and performing a second lookup operation for the data request.

公开(公告)号：US20250077349A1

公开(公告)日：2025-03-06

申请号：US18430287

申请日：2024-02-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoyoun Kim

IPC: G06F11/10

Abstract: A memory device includes a first memory device configured to store a first error correction code of a first size during a first write operation, a second memory device configured to store a second error correction code of a second size, larger than the first size, during a second write operation, and a control logic circuit configured to control the first memory device and the second memory device. The control logic circuit includes an error correction circuit configured to generate one of the first error correction code and the second error correction code for write data according to puncturing option information.

公开(公告)号：US20250077082A1

公开(公告)日：2025-03-06

申请号：US18605333

申请日：2024-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Han LEE ,  Kyung Keun LEE ,  Gyeong Taek LEE ,  Bum Jun KIM

IPC: G06F3/06

Abstract: A storage device comprises a first non-volatile memory, a storage controller configured to receive a memory command for writing data in the first non-volatile memory or reading the data from the first non-volatile memory from a processor of a host device through a first channel, a microcontroller configured to receive a command related to a firmware update executed in the storage device from a baseboard management controller (BMC) of the host device through a second channel different from the first channel, and a second non-volatile memory configured to receive and store firmware data from the BMC of the host device.