公开(公告)号：US20220216242A1

公开(公告)日：2022-07-07

申请号：US17704109

申请日：2022-03-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA

IPC: H01L27/12 ,  G09G3/3266 ,  G09G3/36 ,  G11C19/28

Abstract: The power consumption of a shift register or a display device including the shift register is reduced. A clock signal is supplied to a shift register by a plurality of wirings, not by one wiring. Any one of the plurality of wirings supplies a clock signal in only part of the operation period of the shift register, not during the whole operation period of the shift register. Therefore, the capacity load caused with the supply of clock signals can be reduced, leading to reduction in power consumption of the shift register.

公开(公告)号：US20220123149A1

公开(公告)日：2022-04-21

申请号：US17565771

申请日：2021-12-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/02

Abstract: A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leading to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.

公开(公告)号：US20210295773A1

公开(公告)日：2021-09-23

申请号：US17221927

申请日：2021-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuaki OSAME ,  Aya ANZAI ,  Jun KOYAMA ,  Makoto UDAGAWA ,  Masahiko HAYAKAWA ,  Shunpei YAMAZAKI

IPC: G09G3/3233 ,  H01L27/32 ,  H01L33/08

Abstract: A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. The channel length of the driving TFTs is selected to be very larger than the channel width of the driving TFTs to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT.

公开(公告)号：US20210202542A1

公开(公告)日：2021-07-01

申请号：US17204460

申请日：2021-03-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC: H01L27/12 ,  G02F1/1368 ,  G02F1/1333 ,  G02F1/1362

Abstract: A display device is manufactured with five photolithography steps: a step of forming a gate electrode, a step of forming a protective layer for reducing damage due to an etching step or the like, a step of forming a source electrode and a drain electrode, a step of forming a contact hole, and a step of forming a pixel electrode. The display device includes a groove portion which is formed in the step of forming the contact hole and separates the semiconductor layer.

公开(公告)号：US20210201834A1

公开(公告)日：2021-07-01

申请号：US17191807

申请日：2021-03-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE ,  Kouhei TOYOTAKA

IPC: G09G3/34 ,  G09G3/36

Abstract: A liquid crystal display device comprising a backlight and a pixel portion including first to 2n-th scan lines, wherein, in a first case of expressing a color image, first pixels controlled by the first to n-th scan lines are configured to express a first image using at least one of first to third hues supplied in a first rotating order, and second pixels controlled by the (n+1)-th to 2n-th scan lines are configured to express a second image using at least one of the first to third hues supplied in a second rotating order, wherein, in a second case of expressing a monochrome image, the first and second pixels controlled by the first to 2n-th scan lines are configured to express the monochrome image by external light reflected by the reflective pixel electrode, and wherein the first rotating order is different from the second rotating order.

公开(公告)号：US20210035525A1

公开(公告)日：2021-02-04

申请号：US17063861

申请日：2020-10-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA ,  Shunpei YAMAZAKI

IPC: G09G5/00 ,  G02F1/1368 ,  G09G3/36 ,  H01L27/12

Abstract: The liquid crystal display device includes a pixel portion including a plurality of pixels to which image signals are supplied; a driver circuit including a signal line driver circuit which selectively controls a signal line and a gate line driver circuit which selectively controls a gate line; a memory circuit which stores the image signals; a comparison circuit which compares the image signals stored in the memory circuit in the pixels and detects a difference; and a display control circuit which controls the driver circuit and reads the image signal in accordance with the difference. The display control circuit supplies the image signal only to the pixel where the difference is detected. The pixel includes a thin film transistor including a semiconductor layer including an oxide semiconductor.

公开(公告)号：US20200321362A1

公开(公告)日：2020-10-08

申请号：US16910196

申请日：2020-06-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroyuki MIYAKE ,  Hideaki SHISHIDO ,  Jun KOYAMA

IPC: H01L27/12 ,  H01L29/786

Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.

公开(公告)号：US20200220362A1

公开(公告)日：2020-07-09

申请号：US16821011

申请日：2020-03-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC: H02J7/00

Abstract: The versatility of a power feeding device is improved. A power storage system includes a power storage device and a power feeding device. The power storage device includes data for identifying the power storage device. The power storage device includes a power storage unit, a switch that controls whether power from the power feeding device is supplied to the power storage unit, and a control circuit having a function of controlling a conduction state of the switch in accordance with a control signal input from the power feeding device. The power feeding device includes a signal generation circuit having a function of identifying the power storage device by the data input from the power storage device, generating the control signal corresponding to the identified power storage device, and outputting the generated control signal to the power storage device.

公开(公告)号：US20200176450A1

公开(公告)日：2020-06-04

申请号：US16779774

申请日：2020-02-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Kiyoshi KATO

IPC: H01L27/105 ,  H01L29/786 ,  H01L29/24 ,  H01L27/12 ,  H01L27/108 ,  H01L27/1156 ,  H01L27/11551

Abstract: An object of one embodiment of the present invention is to provide a semiconductor device with a novel structure in which stored data can be stored even when power is not supplied in a data storing time and there is no limitation on the number of times of writing. The semiconductor device includes a first transistor which includes a first channel formation region using a semiconductor material other than an oxide semiconductor, a second transistor which includes a second channel formation region using an oxide semiconductor material, and a capacitor. One of a second source electrode and a second drain electrode of the second transistor is electrically connected to one electrode of the capacitor.

公开(公告)号：US20200098416A1

公开(公告)日：2020-03-26

申请号：US16697292

申请日：2019-11-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC: G11C11/404 ,  G11C11/408 ,  H01L21/84 ,  H01L27/06 ,  H01L27/108 ,  H01L27/12 ,  H01L49/02

Abstract: To provide a memory device which operates at high speed or a memory device in which the frequency of refresh operations is reduced. In a cell array, a potential is supplied from a driver circuit to a wiring connected to a memory cell. The cell array is provided over the driver circuit. Each of memory cells included in the cell array includes a switching element, and a capacitor in which supply, holding, and discharge of electric charge are controlled by the switching element. Further, a channel formation region of the transistor used as the switching element includes a semiconductor whose band gap is wider than that of silicon and whose intrinsic carrier density is lower than that of silicon.