Abstract:
There is provided an optical modulator in which positive holes produced in the valence band are not piled up, the electrostatic capacity can be decreased, the frequency response characteristic is improved, and which is capable of operating at a high speed. In an optical modulator comprising: an n-type clad layer; a stripe-like modulation layer elongated in the direction of light propagation and formed on the top surface of the n-type clad layer; a buffer layer formed on the top surface of the modulation layer; and a p-type clad layer formed on the top surface of the buffer layer, the buffer layer has its composition the band gap energy of which is higher by an energy due to a p-type acceptor level than that of the modulation layer, thereby to remove a difference in band gap energy between the modulation layer and the buffer layer.
Abstract:
An optical device, such as an electro-absorption modulator, has a waveguide formed onto a base. Electrodes adjacent the waveguide are used to selectively apply an electric field to the device in order to control the passage of light through the device. To prevent overheating of the device in a region near the point of optical entry, the electrode, which acts as a thermal conduit to dissipate heat from the waveguide is extended over the region. To prevent undesirable electrical contact between the electrode and the region, the normally electrically conducting contact layer between the electrode and the waveguide is removed in that region and replaced by an isolation dielectric.
Abstract:
The present invention relates to optical devices and, more particularly, to optical waveguide devices in which characteristics of a light signal are modulated or changed in accordance with an applied electric field. Conventionally, in such devices, such as, for example, a Mach-Zehnder modulator, DC drift problems, as are well known within the art, must be surmounted if the optical device is to meet minimum performance criteria. Suitably the present invention provides a layer of an oxide of silicon, preferably substantially, free of metallic impurities, where the ratio of oxygen to silicon is greater than 2 and is preferably greater than or equal to 2.2.
Abstract:
An electrooptic device and method for making the same, including one or more of substrate, a buffer layer, a charge dissipation layer, and electrodes. An Fnull containing active trapping layer is deposited at the substrate/buffer interface, within the buffer layer, and/or on top of the buffer layer. The active Fnull ions in the Fnull containing active trapping layer react with positive ions, such as Linull from the substrate to form stable compounds such as LiF. Porous material such as carbon nanotubes may be used in place of or in addition to the Fnull containing active trapping layer. The reduced number of Linull ions reduces the DC drift of the associated electrooptic device. The profile of the implanted ions may be adjusted to control and/or optimize the properties of the electrooptic device. Fluorine is particularly advantageous because it also lowers the dielectric constant thereby facilitating higher frequency operation.
Abstract:
An integrated optical waveguide device, for example an optical phase modulator or an optical intensity modulator or a frequency converter, comprises a substrate (10) of a ferroelectric material having a first (11) and a second (12) surfaces perpendicular to a direction of spontaneous polarization of the ferroelectric material. At least the second surface is substantially inactive with respect to an operation of applying an externally generated electric field to the substrate. The device has at least one waveguide (18,19) integrated in the substrate in correspondence of the first surface thereof. At least a longitudinal waveguide section of the at least one waveguide is formed in a respective first substrate region (14,15;50) having a first orientation of spontaneous polarization. At least one second substrate region (15,14;51,52) is provided on the first surface adjacent to the first substrate region transversally to the longitudinal waveguide section. The second substrate regions has a second orientation of spontaneous polarization, opposite to the first orientation, so as to develop an electric field component tangential to the first surface in consequence to polarization or free charges generated by one or more of the pyroelectric, piezoelectric and photovoltaic effects. A material layer (117) is associated with the first surface and contains mobile charges so that, under the action of the tangential electric field component, a displacement of the mobile charges is induced which substantially compensates the polarization or free charges in the substrate to significantly reduce an electric field component perpendicular to the first surface at least where the longitudinal waveguide section is integrated.
Abstract:
An electro-optic device such as a Mach-Zehnder interferometer that includes a lithium niobate substrate having an optical waveguide that is formed in an upper surface of the substrate is described. The device includes a polymer buffer layer formed on the upper surface of the substrate. The polymer may be non-conductive or conductive. An electrode is formed on an upper surface of the buffer layer and is positioned to receive an RF signal that induces an electrical field in the optical waveguide. A conductive charge bleed-off layer may be formed between the buffer layer and the electrode in order to bleed-off pyroelectric charge. A semiconductor charge bleed-off layer may be formed between the substrate and the buffer layer.
Abstract:
In a method of manufacturing an integrated optical device using a wafer of lithium niobate, an optical waveguide is formed in the wafer by diffusing from a surface thereof a metal such as titanium, nickel or zinc and which changes the refractive index of the lithium niobate. A chemical vapor deposition process is used to deposit on the wafer surface a silicon dioxide buffer layer, the process being operated with the temperature of the wafer substantially in the region of about 170.degree. C. to 225.degree. C. A metallic electrode array is deposited on the silicon dioxide buffer layer, and then the wafer is mounted in a package, with suitable optic and electric connections being made thereto. The package is hermetically sealed to protect the connected wafer from the environment.
Abstract:
This invention aims at providing an optical waveguide device capable of stably operating for an extended period of time. The optical waveguide device comprises an optical waveguide path formed inside a surface of an electro-optical substrate, a buffer layer formed on the optical waveguide path, and a driving electrode for impressing an electric field so as to change a refractive index of the optical waveguide path, wherein the buffer layer is made of a transparent dielectric or insulator of a mixture between silicon dioxide and an oxide of at least one element selected from the group consisting of the metal elements of the Groups III to VIII, Ib and IIb of the Periodic Table and semiconductor elements other than silicon, or a transparent dielectric or insulator of an oxide between silicon and at least one of the metal elements and semiconductor elements described above.
Abstract:
An article is manufactured from a substrate of a material that exhibits the pyroelectric effect by depositing a film containing a selected material in a first state over a front surface of the substrate. At least one electrode is formed on the film, portions of the film being exposed around the electrode. The exposed portions of the film are subjected to a treatment such that they are converted from the first state to a second state, in which the material has a resistivity that lies within a desired range of values.
Abstract:
A planar waveguide device including metallic electrodes has a buffer layer of reduced ordinary index of refraction formed in a substrate between its waveguide and electrodes. The device is preferably formed by first fabricating the waveguide in an x-or y-cut substrate of crystalline material, subsequently overcoating the substrate, including the waveguide, with a layer of magnesium, oxidizing the magnesium at temperature to form the buffer layer and then laying the electrodes over the buffer layer. Alternatively, the buffer layer may be formed by a proton exchange process.