Abstract:
An integrated circuit includes at least one photodiode associated with a read transistor. The photodiode is formed from a stack of three semiconductor layers comprising a buried layer, an floating substrate layer and an upper layer. The drain region and/or the source region of the transistor are incorporated within the upper layer. The buried layer is electrically isolated from the upper layer so as to allow the buried layer to be biased independently of the upper layer.
Abstract:
A method for recording at least one block of variable data in a first volatile memory external to a microprocessor, including calculating and storing a digital signature taking into account at least partially the address and the content of said data block in the memory, and at least a first random digital value internal to the microprocessor.
Abstract:
The switch mode power supply includes a switching cell SC controllable cyclically and including only one inductive element L and several individually selectable outputs. During each conduction cycle, a total power level corresponding to the sum of the individual power levels respectively required by all the outputs OUTi during this cycle is injected into the inductive element L, the outputs requiring a non-zero individual power level are selected successively and in a predetermined order that is identical for all the cycles, and, at each selected output, the corresponding individual power level is produced.
Abstract:
A bipolar transistor with very high dynamic performance, usable in an integrated circuit. The bipolar transistor has a single-crystal silicon emitter region with a thickness smaller than 50 nm. The base of the bipolar transistor is made of an SiGe alloy.
Abstract:
An integrated circuit includes a substrate and a resistor. The resistor is formed from at least two access wells of a first conductivity type and a deep buried layer electrically connecting the wells. The deep buried layer is at least partly covered by a region of opposite conductivity.
Abstract:
A radiofrequency unit comprising a first dielectric substrate supporting a first conductive antenna layer; a second dielectric substrate supporting circuit elements connected or coupled to ground formed in a second conductive layer, and comprising a radiofrequency antenna line; and a third screen conductive layer arranged between the first and second substrates, provided with a slot to couple the antenna line to the antenna layer, this conductive layer being floating; in which the thickness and the nature of the second substrate are chosen by taking into account the surface of said circuit elements for the screen layer to be coupled to ground by a capacitor forming a short-circuit for radiofrequencies.
Abstract:
The invention concerns the control of thyristor-type semiconductor power components (Sw) powered by an alternating current network (VS). The control signal is a pulse (Ie). It is stored in the form of magnetic induction (B), positive or negative, in a core (T) made of ferromagnetic material. At each current alternation of the network, the interrogation of the magnetic state of the strand results in the presence, or not, of a control signal on the power device (Sw).
Abstract:
A method and circuit to control of a circuit for addressing at least one line electrode of a plasma display panel having, for each line, a line selection stage formed of two switches in series between two input terminals of the selection stage, the method including use of a first one of the two switches of the selection stage of each line to flow a current from or to an inductive element of the addressing circuit.
Abstract:
A digital subscriber line transmission system comprising an IFFT circuit generating successive outgoing time domain symbols on a subscriber line from respective groups of digital frequency domain coefficients; an FFT circuit generating groups of digital frequency domain coefficients from respective incoming time domain symbols received on the subscriber line, a current incoming symbol being delayed with respect to a current outgoing symbol by a predetermined time interval; and circuitry for, during an end portion of a current incoming symbol, subtracting from the signal received on the subscriber line an estimated echo obtained by a filter from a signal portion following the end of the current outgoing symbol, and adding thereto, through said filter, a beginning portion of the current outgoing symbol, wherein said portions have a duration at least equal to said predetermined time interval.
Abstract:
An integrated circuit semiconductor substrate includes an active silicon layer separated from a silicon substrate layer by a buried insulating material layer. The active silicon layer, however, locally includes at least one over-thickness on the side of the buried layer, while maintaining a flat surface state of the semiconductor layer across the integrated circuit. The over-thickness is created by forming a cavity under the active silicon layer in the local area, and then providing the over-thickness by partially filling the cavity at the bottom of the active silicon layer through epitaxial growth. An insulating layer then fills the remaining portions of the cavity.