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    Nonvolatile memory device
    221.
    发明授权
    Nonvolatile memory device 有权

    公开(公告)号：US12268001B2

    公开(公告)日：2025-04-01

    申请号：US17736384

    申请日：2022-05-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung-Hwan Lee ,  Hyun Min Cho

    IPC: H10B43/27 ,  H10B43/10 ,  H10B43/30

    Abstract: A nonvolatile memory device with improved reliability is provided. The nonvolatile memory device comprises a substrate, a mold structure including a plurality of word lines stacked on the substrate, a first word line cut region configured to cut the mold structure, a first channel structure spaced apart from the first word line cut region by a first distance, and disposed in the mold structure and the substrate, and a second channel structure spaced apart from the first word line cut region by a second distance, and disposed in the mold structure and the substrate, wherein the second distance is greater than the first distance, a first width of the first channel structure is different from a second width of the second channel structure, and a first length of the first channel structure is different from a second length of the second channel structure.

    Methods and device for communicating PPDU
    222.
    发明授权
    Methods and device for communicating PPDU 有权

    公开(公告)号：US12267821B2

    公开(公告)日：2025-04-01

    申请号：US17313232

    申请日：2021-05-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Myeongjin Kim ,  Wookbong Lee

    IPC: H04W72/0453 ,  H04L5/00 ,  H04W72/23 ,  H04W74/04 ,  H04W84/12

    Abstract: A method of communicating, by a first device, with at least one second device in a wireless local area network (WLAN) system includes allocating at least one resource unit (RU) within a bandwidth to a second device; generating at least one subfield defining the at least one RU; generating a trigger frame comprising a user information field comprising the at least one subfield, and transmitting a PPDU including the trigger frame to the at least one second device, wherein the generating comprises setting at least seven bits associated with the at least one RU and setting at least two bits as a value defining a subband that includes the at least one RU when the band width comprises at least four subbands.

    Method for operating failure timer during conditional handover in wireless communication system
    226.
    发明授权
    Method for operating failure timer during conditional handover in wireless communication system 有权

    公开(公告)号：US12267739B2

    公开(公告)日：2025-04-01

    申请号：US17312879

    申请日：2019-12-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： June Hwang

    IPC: H04W36/00 ,  H04W36/36

    Abstract: The present disclosure relates to a communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. Various embodiments of the present invention include a method for operating a failure timer during conditional handover in a wireless communication system and a method for operating channel occupation for mobility improvement in an unlicensed band.

    Electronic device including antenna
    227.
    发明授权
    Electronic device including antenna 有权

    公开(公告)号：US12266856B2

    公开(公告)日：2025-04-01

    申请号：US17879609

    申请日：2022-08-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jaewoong Jeon ,  Yonghyun Yoon

    IPC: H01Q13/18 ,  H01Q1/24 ,  H01Q1/52

    Abstract: According to an example embodiment, an electronic device includes: a housing including a front surface, a rear surface opposite to the front surface, and a side surface surrounding at least a portion of an internal space between the front surface and the rear surface, the side surface comprising a conductive material; a wireless communication circuit disposed in the internal space, and an antenna structure including an antenna electrically connected to the wireless communication circuit. The antenna structure includes, an antenna slit formed in an area of the side surface comprising the conductive material and having a longitudinal direction, a feeder configured to apply a current to the antenna slit, and a conductive member comprising a conductive material connected to the side surface to cover at least a portion of the antenna slit.

    Image sensor including separation structure
    228.
    发明授权
    Image sensor including separation structure 有权

    公开(公告)号：US12266668B2

    公开(公告)日：2025-04-01

    申请号：US17643938

    申请日：2021-12-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chongkwang Chang ,  Donghoon Khang ,  Jinyoung Kim ,  Kwangyoung Oh ,  Taehun Lee

    IPC: H01L27/146

    Abstract: An image sensor includes a substrate having first and second surfaces. A separation structure penetrates the substrate. Photoelectric conversion device regions are spaced apart from each other in the substrate. Color filters are disposed on the second surface of the substrate. Microlenses are disposed on the color filters. The separation structure includes lower and upper separation patterns, first line portions that run parallel to each other, and second line portions that perpendicularly intersect the first line portions. An upper surface of the lower separation pattern or a lower surface of the upper separation pattern has a wavy or sawtooth shape. In intersecting regions in which the first line portions and the second line portions intersect, a vertical length of one of the lower separation pattern and the upper separation pattern is about 2 to 10 times greater than a vertical length of the other.

    Semiconductor device
    229.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12266659B2

    公开(公告)日：2025-04-01

    申请号：US17843263

    申请日：2022-06-17

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Keunhwi Cho ,  Jinkyu Kim ,  Myunggil Kang ,  Dongwon Kim ,  Jaechul Kim ,  Sanghoon Lee

    IPC: H01L27/118 ,  H03K19/20

    Abstract: A semiconductor device includes a substrate including a first device region and a second device region, active regions spaced apart from each other on the substrate, having a constant width, extending in a first direction parallel to an upper surface of the substrate and including a first active region and a second active region provided on the first device region and a third active region and a fourth active region provided on the second device region, a plurality of channel layers provided on the active regions and configured to be spaced apart from each other in a direction perpendicular to the upper surface of the substrate, gate structures provided on the substrate and extending to cross the active regions and the plurality of channel layers, and source/drain regions provided on the active regions on at least one side of the gate structures.

    Semiconductor device and method for fabricating the same
    230.
    发明授权
    Semiconductor device and method for fabricating the same 有权

    公开(公告)号：US12266609B2

    公开(公告)日：2025-04-01

    申请号：US17680808

    申请日：2022-02-25

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyung Jun Jeon ,  Kwang Jin Moon ,  Son-Kwan Hwang

    IPC: H01L23/538 ,  H01L25/065

    Abstract: A semiconductor package includes a first semiconductor chip, which includes a first semiconductor substrate and a first bonding layer on the first semiconductor substrate. A second semiconductor chip includes a second semiconductor substrate, a second bonding layer bonded to the first bonding layer, and a chip-through-via which penetrates the second semiconductor substrate and is connected to the second bonding layer. A passivation film extends along an upper side of the second semiconductor chip and does not extend along side-faces of the second semiconductor chip. The chip-through-via penetrates the passivation film. A multiple-gap-fill film extends along the upper side of the first semiconductor chip, the side faces of the second semiconductor chip, and the side faces of the passivation film. The multiple-gap-fill films includes an inorganic filling film and an organic filling film which are sequentially stacked on the first semiconductor chip.

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