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    NUCLEIC ACID AMPLIFICATION DEVICE, NUCLEIC ACID AMPLIFICATION METHOD, AND CHIP FOR NUCLEIC ACID AMPLIFICATION
    255.
    发明申请
    NUCLEIC ACID AMPLIFICATION DEVICE, NUCLEIC ACID AMPLIFICATION METHOD, AND CHIP FOR NUCLEIC ACID AMPLIFICATION 审中-公开

    公开(公告)号：US20170130261A1

    公开(公告)日：2017-05-11

    申请号：US15322000

    申请日：2015-07-07

    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

    Inventor： Hidenori NAGAI ,  Shunsuke FURUTANI ,  Yoshihisa HAGIHARA ,  Yusuke FUCHIWAKI

    IPC: C12Q1/68 ,  B01L3/00 ,  B01L7/00

    Abstract: The present invention provides a reciprocal-flow-type nucleic acid amplification device comprising:heaters capable of forming a denaturation temperature zone and an extension/annealing temperature zone; a fluorescence detector capable of detecting movement of a sample solution between the two temperature zones; a pair of liquid delivery mechanisms that allow the sample solution to move between the two temperature zones and that are configured to be open to atmospheric pressure when liquid delivery stops; a substrate on which the chip for nucleic acid amplification according to claim 2 can be placed; and a control mechanism that controls driving of each liquid delivery mechanism by receiving an electrical signal from the fluorescence detector relating to movement of the sample solution from the control mechanism; the device being capable of performing real-time PCR by measuring fluorescence intensity for each thermal cycle.

    METHOD FOR DETECTING GUANINE-ABASIC SITE IN DNA
    259.
    发明申请
    METHOD FOR DETECTING GUANINE-ABASIC SITE IN DNA 审中-公开

    公开(公告)号：US20170088884A1

    公开(公告)日：2017-03-30

    申请号：US15126178

    申请日：2015-01-29

    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

    Inventor： Chun WU

    IPC: C12Q1/68

    CPC classification number: C12Q1/6827 ,  C12Q1/44 ,  C12Q1/6869 ,  C12Y301/21 ,  C12Y301/21005 ,  C12Q2525/119

    Abstract: The present invention provides a method for detecting the presence or absence of a guanine-abasic site, the method being a process for detecting guanine opposite at least one abasic sites generated in a double-stranded DNA, comprising: (1) step 1 of site-selectively cleaving at least one abasic sites in a double-stranded DNA using an enzyme; (2) step 2 of modifying the amino group at position 2 of guanine opposite the abasic sites using a modifier; and (3) step 3 of performing polymerase chain reaction on the modified double-stranded DNA obtained by conducting step 1 and step 2, which serves as a template, to search for the presence or absence of an amplification product, the sequence of steps 1 and 2 being not limited to the order presented.

    INTEGRATED CIRCUIT COMPOSED OF TUNNEL FIELD-EFFECT TRANSISTORS AND METHOD FOR MANUFACTURING SAME
    260.
    发明申请
    INTEGRATED CIRCUIT COMPOSED OF TUNNEL FIELD-EFFECT TRANSISTORS AND METHOD FOR MANUFACTURING SAME 审中-公开
    组合隧道场效应晶体管的集成电路及其制造方法

    公开(公告)号：US20170077092A1

    公开(公告)日：2017-03-16

    申请号：US15125263

    申请日：2015-02-20

    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

    Inventor： Takahiro MORI

    IPC: H01L27/088 ,  H01L21/265 ,  H01L27/12 ,  H01L29/417 ,  H01L21/8234 ,  H01L21/84

    CPC classification number: H01L27/088 ,  H01L21/26513 ,  H01L21/823418 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/41725

    Abstract: The present invention provides an integrated circuit formed of tunneling field-effect transistors that includes a first tunneling field-effect transistor in which one of a first P-type region and a first N-type region operates as a source region and the other one operates as a drain region; and a second tunneling field-effect transistor in which one of a second P-type region and a second N-type region operates as a source region and the other one operates as a drain region, the first and second tunneling field-effect transistors being formed in one active region to have the same polarity, the first P-type region and the second N-type region being formed adjacently, the adjacent first P-type region and second N-type region being electrically connected through metal semiconductor alloy film.

    Abstract translation: 本发明提供一种由隧穿场效应晶体管构成的集成电路，其包括第一P型区域和第一N型区域中的一个作为源极区域工作的第一隧道场效应晶体管，另一个工作晶体管 作为漏极区域; 以及第二隧道场效应晶体管，其中第二P型区域和第二N型区域中的一个作为源极区域工作，另一个作为漏极区域工作，第一和第二隧道场效应晶体管为 形成在一个有源区中以具有相同的极性，第一P型区和第二N型区相邻形成，相邻的第一P型区和第二N型区通过金属半导体合金膜电连接。

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