公开(公告)号：US12272709B2

公开(公告)日：2025-04-08

申请号：US17655576

申请日：2022-03-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minho Jang ,  Jeongsoon Kang ,  Donghyun Kim ,  Seungkuk Kang ,  Insung Joe

IPC: H01L27/146

Abstract: An image sensor includes a first structure, a second structure, and a third structure that are sequentially stacked in a vertical direction. The first structure includes a first substrate and at least one first transistor disposed on the first substrate. The second structure includes a second substrate and at least one second transistor disposed on the second substrate. The third structure includes a third substrate that includes an upper surface on which light is incident and a lower surface that is opposite to the upper surface, a photoelectric conversion region disposed in the third substrate, a transfer gate disposed on the lower surface of the third substrate, and a reflective structure disposed on the lower surface of the third substrate and on a lower surface and side surface of the transfer gate.

公开(公告)号：US12272705B2

公开(公告)日：2025-04-08

申请号：US17239291

申请日：2021-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae Kim ,  Chang Kyu Lee ,  Dongmo Im ,  Ju-eun Kim ,  Miseon Park ,  Jungim Choe ,  Soojin Hong

IPC: H01L31/062 ,  H10F39/00

Abstract: An image sensor is provided and may include a semiconductor substrate having a surface and including trench, the trench extending from the surface into the semiconductor substrate, an insulating pattern provided in the trench; and a doped region in the semiconductor substrate and on the insulating patterns. The doped region includes a side portion on a side surface of the insulating pattern, and a bottom portion on a bottom surface of the insulating pattern. A thickness of the side portion of the doped region is from 85% to 115% of a thickness of the bottom portion of the doped region, and a number of dopants per unit area in the side portion of the doped region is from 85% to 115% of a number of dopants per unit area in the bottom portion.

公开(公告)号：US12272702B2

公开(公告)日：2025-04-08

申请号：US17546401

申请日：2021-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yujung Choi ,  Junho Seok ,  Munhwan Kim ,  Wonchul Choi

IPC: H01L27/146 ,  H01L27/148

Abstract: An image sensor including first and second pixel groups, each of which includes first to ninth pixels arranged to form a 3×3 array is disclosed. The image sensor further includes first to ninth transfer transistors disposed in each of the pixel groups to correspond to the first to ninth pixels, respectively, each of the first to ninth transfer transistors including a transfer gate and a floating diffusion region, a selection transistor disposed in at least one of the fourth to sixth pixels in each of the pixel group, and source follower transistors respectively disposed in at least two pixels of the first to third and seventh to ninth pixels in each of the pixel groups. Source follower gates of the source follower transistors may be connected to the floating diffusion region of each of the first to ninth transfer transistors.

公开(公告)号：US12272694B2

公开(公告)日：2025-04-08

申请号：US17680907

申请日：2022-02-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Seong Lee ,  Ah Reum Kim ,  Min Su Kim

IPC: H01L27/118

Abstract: A semiconductor device includes first, second, and third power rails extending in a first direction on a substrate and sequentially spaced apart in a second direction intersecting the first direction. A fourth power rail extends in the first direction on the substrate between the first and third power rails. A first well of a first conductive type is displaced inside the substrate between the first and third power rails. Cells are continuously displaced between the first and third power rails and share the first well. The first and third power rails are provided with a first voltage, the second power rail is provided with a second voltage different from the first voltage, the fourth power rail is provided with a third voltage different from the first voltage and the second voltage, and the cells are provided with the third voltage from the fourth power rail.

公开(公告)号：US12272606B2

公开(公告)日：2025-04-08

申请号：US18300983

申请日：2023-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangmin Yoo ,  Juyoun Kim ,  Hyungjoo Na ,  Bongseok Suh ,  Jooho Jung ,  Euichul Hwang ,  Sungmoon Lee

IPC: H01L21/8238 ,  H01L21/762 ,  H01L27/118

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.

公开(公告)号：US12272535B2

公开(公告)日：2025-04-08

申请号：US17673903

申请日：2022-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se Jin Oh ,  Doo Young Gwak ,  Tae Hyun Kim ,  Sang Ki Nam ,  Jae Ho Jang ,  Jin Kyou Choi

IPC: H01J37/32 ,  H01L21/3065

Abstract: A spectroscopic analysis method having improved accuracy and correlation, a method for fabricating a semiconductor device using the same, and a substrate process system using the same are provided. The spectroscopic analysis method includes receiving plasma light emitted from plasma to generate an emission spectrum, detecting n (here, n is a natural number of 2 or more) peak wavelengths from the emission spectrum, generating a plurality of correlation factor time series from correlation factors between the peak wavelengths, filtering the plurality of correlation factor time series, and analyzing the plasma, using the filtered correlation factor time series.

公开(公告)号：US12272403B2

公开(公告)日：2025-04-08

申请号：US17955733

申请日：2022-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoung-Ho Son ,  Doo-Yeun Jung ,  Sung-Kwan Jung

IPC: G11C16/08 ,  G11C16/16 ,  G11C29/12 ,  G11C16/04

Abstract: An operating method of a memory device includes: acquiring an address of a first bad word line, the first bad word line included in a plurality of word lines of the memory device; detecting whether word lines adjacent to the first bad word line are bad based on the address of the first bad word line, the word lines adjacent to the first bad word line included in the plurality of word lines; designating a first word line among the word lines adjacent to the first bad word line as a prohibited word line, the first word line being detected as a second bad word line; and sending first data via a second word line among the word lines adjacent to the first bad word line, the second word line being detected as a normal word line.

公开(公告)号：US12272332B2

公开(公告)日：2025-04-08

申请号：US18214560

申请日：2023-06-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyehun Jeon ,  Sungyul Choe ,  Seonghoon Choi ,  Nawoong Han ,  Sangheon Kim ,  Yeunwook Lim

IPC: G09G5/00 ,  G09G5/14

Abstract: An electronic device may include: a display configured to display an execution screen of an application, and a processor operatively connected to the display. The processor is configured to: execute the application; receive a frequency event from the application; identify predetermined settings based on the application being executed; determine, based on the frequency event and the predetermined settings, a refresh rate of an execution screen of the application; identify, based on state information of the electronic device and the determined refresh rate, information for controlling operation of a high speed screen; and controlling, based on the identified information, the high speed screen related to the execution screen of the application on the display.

公开(公告)号：US12271767B2

公开(公告)日：2025-04-08

申请号：US18105799

申请日：2023-02-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mohammadreza Soltaniyeh ,  Xuebin Yao ,  Ramdas Kachare

IPC: G06F16/00 ,  G06F9/00 ,  G06F9/48 ,  G06F9/50 ,  G06F9/54 ,  G06F16/11 ,  G06F16/13 ,  G06F16/178 ,  G06F16/25

Abstract: A device is disclosed. A receiver may receive a portion using a first data format from a source device. A transformation unit may transform the portion into a transformed portion. The transformed portion may use a second data format. A transmitter may deliver the transformed portion to a destination device.

公开(公告)号：US12271245B2

公开(公告)日：2025-04-08

申请号：US17321633

申请日：2021-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changryong Heo ,  Kenhyung Park ,  Kiyeon Park ,  Yongyi Kim

IPC: G06F1/3206 ,  G06F1/16 ,  G06F1/3209 ,  G06F1/3215 ,  G06F1/3231 ,  G06F1/3234 ,  G06F1/3293 ,  G06F3/01 ,  G06F3/16

Abstract: An apparatus and method for waking up a main processor (MP) in a low power or ultra-low power device preferably includes the MP, and a sub-processor (SP) that utilizes less power than the MP to monitor ambient conditions than the MP, and may be internalized in the MP. The MP and SP can remain in a sleep mode while an interrupt sensor monitors for changes in the ambient environment. A sensor is preferably an interrupt-type sensor, as opposed to polling-type sensors conventionally used to detect ambient changes. The MP and SP may remain in sleep mode, as a low-power or an ultra-low power interrupt sensor operates with the SP being in sleep mode, and awakens the SP via an interrupt indicating a detected change. The SP then wakes the MP after comparing data from the interrupt sensor with values in storage or with another sensor.