公开(公告)号：US20080205336A1

公开(公告)日：2008-08-28

申请号：US11965781

申请日：2007-12-28

Applicant: Jae-Hoon Lee ,  Seong-Taek Hwang ,  Won-Jin Sung ,  Jin-Woo Choe ,  Byoung-Seok Lee ,  In-Hong Shong

Inventor： Jae-Hoon Lee ,  Seong-Taek Hwang ,  Won-Jin Sung ,  Jin-Woo Choe ,  Byoung-Seok Lee ,  In-Hong Shong

IPC: H04Q7/00 ,  H04B7/00

CPC classification number: H04B7/061 ,  H04W52/265 ,  H04W72/1231 ,  H04W72/1242 ,  H04W84/047

Abstract: A joint scheduling apparatus and method for increasing frequency efficiency and fairness in a multi-channel distributed antenna system using frequency reuse and common control power. One of a Base Station (BS) or Relay Station (RS) are selected to transmit packets to a Mobile Station (MSs), taking into account Quality of Service (QoS) in one of a BS and an RS and grouped into packet groups. The packets are selected from the packet groups, links corresponding to the packets are grouped into a link group, a joint power control is performed on the link group, link elimination and link addition are performed for the link group until optimal solutions are achieved for the links group, channels are allocated to the links when the optimal solutions are achieved for the links, and the status of a user queue is updated.

Abstract translation: 一种使用频率复用和公共控制功率在多信道分布式天线系统中提高频率效率和公平性的联合调度装置和方法。 选择基站（BS）或中继站（RS）之一以考虑到BS和RS之一的服务质量（QoS）并分组成分组组，将分组传送到移动台（MS）。 从分组组中选择分组，对应于分组的链路被分组成链路组，对链路组执行联合功率控制，链路消除和链路加入对链路组执行，直到达到最优解为止 链路组，当为链路实现最优解时，分配给链路，更新用户队列的状态。

公开(公告)号：US20080145057A1

公开(公告)日：2008-06-19

申请号：US12001632

申请日：2007-12-12

Applicant: Jae-Hoon Lee ,  Seong-Taek Hwang ,  Byung-Jik Kim ,  Sang-Ho Kim

Inventor： Jae-Hoon Lee ,  Seong-Taek Hwang ,  Byung-Jik Kim ,  Sang-Ho Kim

IPC: H04J14/08 ,  H04B10/00

CPC classification number: H04W88/085 ,  H04Q11/0067 ,  H04Q2011/0088

Abstract: Disclosed are a method and a system for generating switching control signal separating transmission signal on an access point and a mobile communication terminal in an optical repeater employing, for example, a TDD scheme. The method includes the steps of generating a control signal for generating a switching control signal in transmitting data from the AP and transmitting the control information to a remote during an idle time interval, detecting synchronization information on the downlink signal and time-delay information from the control information, delaying a time interval between the synchronization information and a starting point of the downlink signal, generating the switching control signal for the downlink signal according to the transmission time information of the downlink signal, and performing a switching operation according to the switching control signal and setting a downlink path.

Abstract translation: 公开了一种用于在采用例如TDD方案的光中继器中产生在接入点和移动通信终端上分离传输信号的切换控制信号的方法和系统。 该方法包括以下步骤：在空闲时间间隔期间产生用于产生切换控制信号以从AP发送数据并将控制信息发送给远端，检测下行链路信号的同步信息和来自 控制信息，延迟同步信息和下行链路信号的起始点之间的时间间隔，根据下行链路信号的发送时间信息生成下行链路信号的切换控制信号，根据切换控制进行切换动作 信号并设置下行链路路径。

公开(公告)号：US20080131988A1

公开(公告)日：2008-06-05

申请号：US12016020

申请日：2008-01-17

Applicant: Jae Hoon Lee ,  Jeong Tak Oh ,  Jin Sub Park

Inventor： Jae Hoon Lee ,  Jeong Tak Oh ,  Jin Sub Park

IPC: H01L21/329

CPC classification number: H01L33/32 ,  H01L33/14

Abstract: A nitride semiconductor light emitting device and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, an undoped GaN layer formed on the p-type nitride semiconductor layer, an AlGaN layer formed on the undoped GaN layer to form a two-dimensional electron gas (2DEG) layer at a bonding interface between the AlGaN layer and the undoped GaN layer, and an n-side electrode and a p-side electrode respectively formed on the n-type nitride semiconductor layer and the AlGaN layer to be connected to each other. As a hetero-junction structure of GaN/AlGaN is formed on the p-type nitride semiconductor layer, contact resistance between the p-type nitride semiconductor layer and the p-side electrode is enhanced by virtue of tunneling effect through the 2DEG layer.

Abstract translation: 公开了一种氮化物半导体发光器件及其制造方法。 氮化物半导体发光器件包括形成在衬底上的n型氮化物半导体层，形成在n型氮化物半导体层上的有源层，形成在有源层上的p型氮化物半导体层，形成的未掺杂的GaN层 在p型氮化物半导体层上，形成在未掺杂的GaN层上的AlGaN层，以在AlGaN层和未掺杂的GaN层之间的键合界面处形成二维电子气（2DEG）层，以及n侧电极 以及分别形成在相互连接的n型氮化物半导体层和AlGaN层上的p侧电极。 由于在p型氮化物半导体层上形成GaN / AlGaN的异质结结构，因此通过2DEG层的隧道效应，p型氮化物半导体层与p侧电极之间的接触电阻增强。

公开(公告)号：US20080122516A1

公开(公告)日：2008-05-29

申请号：US11771138

申请日：2007-06-29

Applicant: Kee-Chan PARK ,  Min-Koo HAN ,  Woo-Jin NAM ,  Jae-Hoon LEE

Inventor： Kee-Chan PARK ,  Min-Koo HAN ,  Woo-Jin NAM ,  Jae-Hoon LEE

IPC: H03L5/00

CPC classification number: H03K3/35613 ,  G09G3/3611 ,  G09G3/3648 ,  G09G2300/0408 ,  G09G2310/0289 ,  G09G2310/08

Abstract: A level shifter includes; a level conversion unit which receives a first input signal and a second input signal, wherein the second input signal is an inversion of the first input signal, and generates a first output signal having substantially a same phase of the first input signal and a voltage which is higher than the first input signal and a second output signal having substantially a same phase as the first input signal and a voltage which is lower than the first input signal; and wherein the level shifter further includes an amplifying unit which receives the first and second output signals and generates a third output signal having substantially a same phase as the first input signal and an amplitude which is greater than the first input signal.

Abstract translation: 电平转换器包括： 电平转换单元，其接收第一输入信号和第二输入信号，其中所述第二输入信号是所述第一输入信号的反相，并且产生具有与所述第一输入信号基本上相同相位的第一输出信号和 高于第一输入信号，第二输出信号具有与第一输入信号基本相同的相位和低于第一输入信号的电压; 并且其中所述电平移位器还包括放大单元，其接收所述第一和第二输出信号，并产生具有与所述第一输入信号基本相同的相位的第三输出信号和大于所述第一输入信号的幅度。

公开(公告)号：US07361521B2

公开(公告)日：2008-04-22

申请号：US11503944

申请日：2006-08-15

Applicant: Jeong Tak Oh ,  Jae Hoon Lee ,  Seok Beom Choi

Inventor： Jeong Tak Oh ,  Jae Hoon Lee ,  Seok Beom Choi

IPC: H01L21/00

CPC classification number: H01L33/0079 ,  H01L33/007

Abstract: The present invention relates to a method of manufacturing a vertical GaN-based LED. The method includes forming an insulating pattern on a substrate to define LED regions having a predetermined size; sequentially stacking an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer on the substrate except for the insulating pattern to form a light emitting structure; removing the insulating pattern to divide the light emitting structure into LED sections having a predetermined size; forming p-electrodes on the LED sections, respectively; forming a structure support layer on the p-electrodes; removing the substrate to expose the divided n-type GaN-based semiconductor layer; and forming n-electrodes on the exposed n-type GaN-based semiconductor layer.

Abstract translation: 本发明涉及一种制造垂直GaN基LED的方法。 该方法包括在基板上形成绝缘图案以限定具有预定尺寸的LED区域; 在除了绝缘图案之外的衬底上依次堆叠n型GaN基半导体层，有源层和p型GaN基半导体层以形成发光结构; 去除绝缘图案以将发光结构分成具有预定尺寸的LED部分; 分别在LED部分上形成p电极; 在p电极上形成结构支撑层; 去除衬底以暴露分开的n型GaN基半导体层; 在暴露的n型GaN基半导体层上形成n电极。

公开(公告)号：US07327076B2

公开(公告)日：2008-02-05

申请号：US11286315

申请日：2005-11-22

Applicant: Hyeong Rae Seon ,  Jae Hoon Lee

Inventor： Hyeong Rae Seon ,  Jae Hoon Lee

IPC: H01J1/88 ,  H01J19/42 ,  H01K1/18

CPC classification number: H01J29/864 ,  H01J31/123 ,  H01J2329/8625

Abstract: An electron emission display includes: an electron emission substrate having at least one electron emission device formed thereon, an image forming substrate, and at least two spacers for supporting the electron emission substrate and the image forming substrate to be spaced apart from each other. Areas of the spacers per unit area are increased in at least one direction from a central region to a periphery region. The areas can be increased by, for example, increasing a cross-sectional area of each spacer or increasing the number of spacers. In another embodiment, heights of the spacers are decreased in at least one direction from the center region to the periphery region.

Abstract translation: 电子发射显示器包括：具有形成在其上的至少一个电子发射器件的电子发射衬底，成像衬底和至少两个用于将电子发射衬底和图像形成衬底彼此间隔开的间隔物。 每单位面积的间隔物的区域在从中心区域到外围区域的至少一个方向上增加。 可以通过例如增加每个间隔物的横截面积或增加间隔物的数量来增加这些面积。 在另一个实施例中，间隔物的高度在从中心区域到外围区域的至少一个方向上减小。

公开(公告)号：US20080018655A1

公开(公告)日：2008-01-24

申请号：US11825769

申请日：2007-07-09

Applicant: Min Koo Han ,  Hyun Sang Park ,  Jae Hoon Lee

Inventor： Min Koo Han ,  Hyun Sang Park ,  Jae Hoon Lee

IPC: G09G5/36

CPC classification number: G09G3/3233 ,  G09G2300/0842 ,  G09G2310/0254 ,  G09G2320/0285 ,  G09G2320/043 ,  G09G2340/0435

Abstract: The present invention relates to an organic light emitting display, and an aspect of the invention is to minimize the phenomenon of reduction in luminance of the organic light emitting diode display, by dividing an analog data to a positive data and a negative data, applying the same data with different polarities to the control electrode of a driving transistor, and preventing the deterioration of threshold voltage of the driving transistor.For this purpose, the present invention discloses an organic light emitting display including a frame memory that stores data of one or more frames, doubles the frequency of the frame data, and repeatedly outputs the frame data; a look-up table memory that divides the frame data doubled and outputted from the frame memory, into two digital input signals such as a positive data and a negative data, and outputs the data; and a digital-analog converter that receives the positive data and negative data outputted from the look-up table memory, converts the data to analog data, and outputs the analog data.

Abstract translation: 本发明涉及一种有机发光显示器，本发明的一个方面是通过将模拟数据分割为正数据和负数据来最小化有机发光二极管显示器的亮度降低现象， 与驱动晶体管的控制电极具有不同极性的相同数据，并且防止驱动晶体管的阈值电压的劣化。 为此，本发明公开了一种有机发光显示器，包括存储一个或多个帧的数据的帧存储器，使帧数据的频率加倍，并重复输出帧数据; 将从帧存储器加倍并输出的帧数据分割为两个数字输入信号，例如正数据和负数据的查找表存储器，并输出数据; 以及数字模拟转换器，其接收从查找表存储器输出的正数据和负数据，将数据转换为模拟数据，并输出模拟数据。

公开(公告)号：US20070290225A1

公开(公告)日：2007-12-20

申请号：US11892445

申请日：2007-08-23

Applicant: Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

Inventor： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/22 ,  H01L2933/0083

Abstract: The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.

Abstract translation: 本发明涉及一种垂直构造的GaN基发光二极管的制造方法。 制造垂直结构的GaN基发光二极管的方法包括在衬底上形成GaN层; 将化合物层图案化成预定的形状; 通过外延横向过度生长工艺在图案化的化合物层上形成n型GaN层，并在n型GaN层上依次形成有源层和p型GaN层; 在p型GaN层上形成结构支撑层; 在形成结构支撑层之后，依次去除衬底和形成在衬底上的GaN层; 去除在去除GaN层之后暴露的图案化合物层，以形成图案化为凹形的n型GaN层; 在形成凹形的n型GaN层上形成n型电极。

公开(公告)号：US07306964B2

公开(公告)日：2007-12-11

申请号：US11430990

申请日：2006-05-10

Applicant: Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

Inventor： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

IPC: H01L21/00

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/22 ,  H01L2933/0083

Abstract: The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.

公开(公告)号：US20070182311A1

公开(公告)日：2007-08-09

申请号：US11595547

申请日：2006-11-10

Applicant: Su-Bong Hong ,  Sang-Jo Lee ,  Sang-Ho Jeon ,  Jin-Hui Cho ,  Sang-Hyuck Ahn ,  Byung-Gil Jea ,  Dong-Su Chang ,  Cheol-Hyeon Chang ,  Jae-Hoon Lee

Inventor： Su-Bong Hong ,  Sang-Jo Lee ,  Sang-Ho Jeon ,  Jin-Hui Cho ,  Sang-Hyuck Ahn ,  Byung-Gil Jea ,  Dong-Su Chang ,  Cheol-Hyeon Chang ,  Jae-Hoon Lee

IPC: H01J63/04 ,  H01J1/62

CPC classification number: H01J29/006 ,  H01J7/24 ,  H01J31/123 ,  H01J2329/002

Abstract: An electron emission display includes a first substrate and a second substrate facing each other, a side member formed along the edges of the first substrate and the second substrate to form a vacuum envelope together with the first substrate and the second substrate, an electron emission unit provided on the first substrate, a light emission unit provided on the second substrate to emit visible light when impacted by electrons from the electron emission unit, and a thermal conduction member connecting the first substrate and the second substrate.

Abstract translation: 电子发射显示器包括第一基板和彼此面对的第二基板，沿着第一基板和第二基板的边缘形成的侧部件，与第一基板和第二基板一起形成真空外壳;电子发射单元 设置在所述第一基板上的发光单元，设置在所述第二基板上以在受到来自所述电子发射单元的电子的冲击时发出可见光的发光单元，以及连接所述第一基板和所述第二基板的导热构件。