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公开(公告)号：US10373764B2
公开(公告)日：2019-08-06
申请号：US15792785
申请日：2017-10-25
摘要： A method for producing agglomerated tantalum particles, comprising: a step for grinding secondary tantalum particles, which are obtained by reducing a tantalum salt, and adding water thereto to give a water-containing mass; a step for drying said water-containing mass to give a dry mass; a step for sieving said dry mass to give spherical particles; and a step for heating said spherical particles. A mixed tantalum powder comprising a mixture of agglomerated tantalum particles (X) with agglomerated tantalum particles (Y), wherein said agglomerated tantalum particles (X) show a cumulative percentage of particles with particle size of 3 μm or less of 5 mass % or less after 25 W ultrasonic radiation for 10 min, while said agglomerated tantalum particles (Y) show a cumulative percentage of particles with particle size of 3 μm or less of 10 mass % or more after 25 W ultrasonic radiation for 10 min.
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22.发明申请公开(公告)号：US20170209925A1
公开(公告)日：2017-07-27
申请号：US15328501
申请日：2014-08-12
发明人： Eiji Kataoka , Shuhei Yoshikawa , John Koenitzer
CPC分类号： B22F1/0096 , B22F1/0088 , B22F9/026 , B22F9/04 , B22F9/08 , B22F9/20 , B22F9/24 , B22F9/28 , B22F2201/20 , B22F2998/10 , C01G33/00 , C01P2002/54 , C01P2004/51 , C01P2004/61 , C01P2006/10 , C01P2006/12 , C04B35/495 , C04B35/62655 , C04B2235/3253 , C04B2235/5409 , C04B2235/5436 , C04B2235/5463 , C04B2235/72 , C04B2235/721 , C04B2235/722 , C04B2235/723 , C04B2235/727 , C04B2235/728 , C22C1/045 , C22C27/02 , H01G9/042 , H01G9/052 , H01G9/0525 , B22F9/10 , B22F1/0085 , B22F2201/10 , B22F3/10
摘要： The present invention related to a method to make capacitor grade powder. The method includes the use of a spray dryer that includes a rotating atomizer disk to form agglomerated powder and the method further includes a heat treatment step. Capacitor grade powder formed by the methods of the present invention are further described.
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公开(公告)号：US08500928B2
公开(公告)日：2013-08-06
申请号：US13551697
申请日：2012-07-18
CPC分类号： C22C5/06 , C22C5/02 , C22C9/00 , C22C14/00 , C22C16/00 , C22C19/07 , C22C21/00 , C22C27/00 , C22F1/16 , C22F1/18 , C23C14/3414
摘要： A method of making sputter targets using rotary axial forging is described. Other thermomechanical working steps can be used prior to and/or after the forging step. Sputter targets are further described which can have unique grain size and/or crystal structures.
摘要翻译： 描述了使用旋转轴向锻造制造溅射靶的方法。 在锻造步骤之前和/或之后可以使用其它热机械加工步骤。 进一步描述可以具有独特的晶粒尺寸和/或晶体结构的溅射靶。
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24.发明授权公开(公告)号：US08277896B2
公开(公告)日：2012-10-02
申请号：US11847446
申请日：2007-08-30
IPC分类号： B05D3/02
CPC分类号： C01G1/02 , C01G33/006 , C01G35/006 , C01P2002/34 , C01P2004/61 , C01P2004/80 , C01P2006/32 , C01P2006/40 , H01G4/1254 , H01L21/31691
摘要： Methods of making a ternary oxide and a perovskite-related ternary oxide structure are described. The methods include reacting a binary oxide with a metal oxide or a metal hydroxide to form a ternary oxide dielectric layer on a substrate. Powders, anodes, pressed articles, and capacitors including the ternary oxide or perovskite-related ternary oxide structure as a dielectric layer or other layers are further described.
摘要翻译： 描述了制备三元氧化物和钙钛矿相关三元氧化物结构的方法。 所述方法包括使二元氧化物与金属氧化物或金属氢氧化物反应以在基底上形成三元氧化物介电层。 还描述了包括三元氧化物或钙钛矿相关三元氧化物结构的粉末，阳极，压制品和电容器作为电介质层或其它层。
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公开(公告)号：US08231744B2
公开(公告)日：2012-07-31
申请号：US12269077
申请日：2008-11-12
IPC分类号： C22C27/02
CPC分类号： C23C14/3414 , C22C27/02 , C22F1/18
摘要： Extruded tantalum billets and niobium billets are described having a substantially uniform grain size and preferably an average grain size of about 150 microns or less and more preferably an average grain size of about 100 microns or less. The extruded billet can then be forged or processed by other conventional techniques to form end use products such as sputtering targets. A process for making the extruded tantalum billets or niobium billets is also described and involves extruding a starting billet at a sufficient temperature and for a sufficient time to at least partially recrystallize the billet and form the extruded billet of the present invention.
摘要翻译： 描述了挤出的钽坯和铌坯具有基本均匀的晶粒尺寸，优选平均晶粒尺寸为约150微米或更小，更优选平均晶粒尺寸为约100微米或更小。 然后可以通过其它常规技术来锻造或加工挤出的坯料，以形成诸如溅射靶的最终用途产品。 还描述了制造挤出的钽坯料或铌坯料的方法，并且包括在足够的温度下挤出起始坯料并且足够的时间使坯料至少部分地重结晶并形成本发明的挤出坯料。
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