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    METHOD FOR FABRICATING LIGHT EMITTING DIODE CHIP
    21.
    发明申请
    METHOD FOR FABRICATING LIGHT EMITTING DIODE CHIP 有权
    用于制造发光二极管芯片的方法

    公开(公告)号：US20110318855A1

    公开(公告)日：2011-12-29

    申请号：US13220693

    申请日：2011-08-30

    Applicant: Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

    Inventor： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

    IPC: H01L33/44

    CPC classification number: H01L33/387 ,  H01L33/382 ,  H01L33/44

    Abstract: A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.

    Abstract translation: 提供一种制造发光二极管芯片的方法。 首先，在基板上形成半导体器件层。 之后，在半导体器件层的一部分上形成电流扩散层。 然后，在未被电流扩展层覆盖的半导体器件层的一部分上形成电流阻挡层和钝化层。 最后，在电流阻挡层和电流扩展层上形成第一电极。 此外，在半导体器件层上形成第二电极。

    Casting for an LED module
    22.
    发明授权
    Casting for an LED module 有权
    铸造LED模块

    公开(公告)号：US08084779B2

    公开(公告)日：2011-12-27

    申请号：US12702574

    申请日：2010-02-09

    Applicant: Ying-Tso Chen ,  Teng-Huei Huang

    Inventor： Ying-Tso Chen ,  Teng-Huei Huang

    IPC: H01L33/00

    CPC classification number: H01L25/167 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49113 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: A casting adapted to carry a light emitting diode die and an anti-static die is disclosed. The casting comprises two electrodes for opposite electrodes and a wall. The light emitting diode die is mounted one of electrodes and the anti-static die is mounted on the other electrode. The wall is arranged between the light emitting diode die and the anti-static die. Further, the height of the wall is larger than that of the anti-static die to shade the anti-static die, whereby reflecting the light emitted from the light emitting diode die. Therefore, the reflection ratio of the light emitting diode die is improved, and the intensity generated by the whole light emitting diode is also improved.

    Abstract translation: 公开了一种适用于承载发光二极管管芯和抗静电管芯的铸件。 铸件包括用于相对电极和壁的两个电极。 发光二极管管芯安装在电极之一中，防静电管芯安装在另一个电极上。 壁布置在发光二极管管芯和防静电管芯之间。 此外，壁的高度大于防静电模具的高度以遮蔽防静电模具，从而反射从发光二极管管芯发射的光。 因此，发光二极管管芯的反射率提高，并且由整个发光二极管产生的强度也得到改善。

    Package substrate and light emitting device using the same
    23.
    发明授权
    Package substrate and light emitting device using the same 有权
    封装衬底和使用其的发光器件

    公开(公告)号：US08049244B2

    公开(公告)日：2011-11-01

    申请号：US12334476

    申请日：2008-12-14

    Applicant: Chih-Ming Chen ,  Cheng-Hung Yang

    Inventor： Chih-Ming Chen ,  Cheng-Hung Yang

    IPC: H01L33/00 ,  H01L33/44

    CPC classification number: H01L33/641 ,  F21K9/00 ,  H01L24/73 ,  H01L25/0753 ,  H01L33/60 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/14 ,  H01L2924/00012 ,  H01L2924/00

    Abstract: A package substrate of the present invention at least comprises a metal substrate and a plurality of light emitting dies. The metal substrate is provided thereon with at least one trench. The trench is recessed into the surface of the metal substrate through an insulating layer. The light emitting dies are secured in the trench and electrically connected to a predetermined wiring layer on the metal substrate by metal wires, thereby obtaining a light emitting die package substrate with good thermal conductivity, high heat dissipation, separate electrical and thermal paths and a simple and firm structure.

    Abstract translation: 本发明的封装基板至少包括金属基板和多个发光管芯。 金属基底上设置有至少一个沟槽。 沟槽通过绝缘层凹陷到金属基板的表面中。 发光管芯固定在沟槽中，并通过金属线与金属基板上的预定布线层电连接，从而获得具有良好导热性，高散热性，分开的电路和热路径以及简单的发光模组封装基板 和坚定的结构。

    Method for Fabricating LED Chip Comprising Reduced Mask Count and Lift-Off Processing
    25.
    发明申请
    Method for Fabricating LED Chip Comprising Reduced Mask Count and Lift-Off Processing 有权
    制造LED芯片的方法包括减少掩模计数和剥离处理

    公开(公告)号：US20110165705A1

    公开(公告)日：2011-07-07

    申请号：US13046606

    申请日：2011-03-11

    Applicant: Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

    Inventor： Kuo-Lung Fang ,  Chien-Sen Weng ,  Chih-Wei Chao

    IPC: H01L33/36

    CPC classification number: H01L33/44 ,  H01L33/387 ,  Y10S438/951

    Abstract: A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.

    Abstract translation: 提供一种制造发光二极管芯片的方法。 在该方法中，应用半色调掩模处理，灰度色调处理或多色调掩模处理，并与剥离处理相结合，以进一步减少发光二极管芯片的处理步骤。 在本发明中，一些部件也可以通过相同的工艺同时形成，以减少发光二极管芯片的工艺步骤。 因此，本发明中提供的发光二极管的制造方法降低了用于制造发光二极管的成本和时间。

    Light emitting diode package
    27.
    发明授权
    Light emitting diode package 有权
    发光二极管封装

    公开(公告)号：US07935981B2

    公开(公告)日：2011-05-03

    申请号：US12497703

    申请日：2009-07-06

    Applicant: Yu-Chun Lee ,  Ya-Hsien Chang ,  Cheng-Ta Kuo

    Inventor： Yu-Chun Lee ,  Ya-Hsien Chang ,  Cheng-Ta Kuo

    IPC: H01L33/00

    CPC classification number: H01L33/501 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/00014

    Abstract: A light emitting diode (LED) package includes a carrier, an LED chip, an encapsulant, a plurality of phosphor particles, and a plurality of anti-humidity particles. The LED chip is disposed on and electrically connected to the carrier. The encapsulant encapsulates the LED chip. The phosphor particles and the anti-humidity particles are distributed within the encapsulant. A first light emitted from the LED chip excites the phosphor particles to emit a second light. Some of the anti-humidity particles are adhered onto a surface of the phosphor particles, while the other anti-humidity particles are not adhered onto the surface of the phosphor particles. The anti-humidity particles absorb H2O so as to avoid H2O from being reacted with the phosphor particles. The LED package of the present application has favorable water resistance.

    Abstract translation: 发光二极管（LED）封装包括载体，LED芯片，密封剂，多个荧光体颗粒和多个抗湿颗粒。 LED芯片设置在载体上并与其电连接。 密封剂封装了LED芯片。 荧光体颗粒和抗湿颗粒分布在密封剂内。 从LED芯片发射的第一个光线使荧光体颗粒发射第二个光。 一些抗湿颗粒附着在荧光体颗粒的表面上，而其它的防湿颗粒不附着在荧光体颗粒的表面上。 抗湿颗粒吸收H2O，以避免H2O与荧光体颗粒反应。 本申请的LED封装具有良好的耐水性。

    FABRICATION METHOD OF LIGHT EMITTING DIODE
    29.
    发明申请
    FABRICATION METHOD OF LIGHT EMITTING DIODE 有权
    发光二极管的制造方法

    公开(公告)号：US20100285626A1

    公开(公告)日：2010-11-11

    申请号：US12542703

    申请日：2009-08-18

    Applicant: Te-Chung Wang ,  Chun-Jong Chang ,  Kun-Fu Huang

    Inventor： Te-Chung Wang ,  Chun-Jong Chang ,  Kun-Fu Huang

    IPC: H01L33/00

    CPC classification number: H01L33/007 ,  Y10S438/962 ,  Y10S977/755

    Abstract: A fabrication method of light emitting diode is provided. A first type doped semiconductor layer is formed on a substrate. Subsequently, a light emitting layer is formed on the first type doped semiconductor layer. A process for forming the light emitting layer includes alternately forming a plurality of barrier layers and a plurality of quantum well layers on the first type doped semiconductor layer. The quantum well layers are formed at a growth temperature T1, and the barrier layers are formed at a growth temperature T2, where T1

    Abstract translation: 提供了一种发光二极管的制造方法。 在基板上形成第一种类型的掺杂半导体层。 随后，在第一种掺杂半导体层上形成发光层。 形成发光层的工艺包括在第一掺杂半导体层上交替地形成多个势垒层和多个量子阱层。 量子阱层以生长温度T1形成，并且阻挡层以T1

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