公开(公告)号：US20110289141A1

公开(公告)日：2011-11-24

申请号：US12970704

申请日：2010-12-16

申请人： Daniel L. Pletter ,  Andrew Waite ,  Doug Chasman ,  James K. Mooney ,  James Troup

发明人： Daniel L. Pletter ,  Andrew Waite ,  Doug Chasman ,  James K. Mooney ,  James Troup

IPC分类号： G06F15/16

CPC分类号： G06F8/38 ,  G06F3/0481 ,  G06F16/27 ,  G06F17/2247 ,  H04L67/10

摘要： Methods, devices and systems for providing a user interface in an on-demand software service environment are described. Some implementations involve sending a request from a first apparatus to a second apparatus and receiving a response from the second apparatus. The response may include serialized instantiated component definitions, serialized data for the instantiated component definitions and serialized metadata for the instantiated component definitions. Such implementations may involve deserializing the response to create a metadata structure, traversing the metadata structure to create an instance data structure, traversing the instance data structure to render or re-render a page and displaying the page on a display of the first apparatus.

摘要翻译： 描述了在点播软件服务环境中提供用户界面的方法，设备和系统。 一些实现涉及将请求从第一设备发送到第二设备并且从第二设备接收响应。 响应可以包括序列化的实例化组件定义，用于实例化组件定义的序列化数据和用于实例化组件定义的序列化元数据。 这样的实现可以包括反序列化响应以创建元数据结构，遍历元数据结构以创建背景数据结构，遍历该背景数据结构以呈现或重新呈现页面并且在第一设备的显示器上显示该页面。

公开(公告)号：US20110283267A1

公开(公告)日：2011-11-17

申请号：US13104775

申请日：2011-05-10

申请人： Andrew Waite ,  Alan Ballard ,  K. Sagar Wanaselja ,  Richard Unger

发明人： Andrew Waite ,  Alan Ballard ,  K. Sagar Wanaselja ,  Richard Unger

IPC分类号： G06F9/44

CPC分类号： G06F11/3672

摘要： Disclosed herein are techniques for compiling a procedure for testing a page. In some implementations, a component definition for a component instance referred to in computer programming language instructions defining a test procedure for testing a page may be received. The page may be defined by a page description implemented in a markup language. The page description may include a reference to a first portion of a component instance. Compiled wrapper code operable to simulate the presence of the component instance may be generated. The compiled wrapper code may represent the first portion of the component instance referenced in the page description. A compiled test procedure may be generated based on the computer programming language instructions. The compiled test procedure may include the compiled wrapper code. The compiled test procedure may be capable of being executed to perform the test procedure.

摘要翻译： 这里公开了用于编译用于测试页面的过程的技术。 在一些实现中，可以接收定义用于测试页面的测试过程的计算机程序设计语言指令中引用的组件实例的组件定义。 该页面可以由以标记语言实现的页面描述来定义。 页面描述可以包括对组件实例的第一部分的引用。 可以生成用于模拟组件实例的存在的可编译包装器代码。 编译的包装代码可以表示页面描述中引用的组件实例的第一部分。 可以基于计算机编程语言指令生成编译的测试程序。 编译的测试过程可能包括编译的包装器代码。 编译的测试程序可以被执行以执行测试程序。

公开(公告)号：US20110068637A1

公开(公告)日：2011-03-24

申请号：US12959875

申请日：2010-12-03

申请人： Fouad Kiamilev ,  Nicholas Andrew Waite

发明人： Fouad Kiamilev ,  Nicholas Andrew Waite

IPC分类号： G05F3/02

CPC分类号： G05F1/67 ,  Y02E10/58

摘要： This invention relates to a method for Maximum Power Point Tracking (MPPT) a photovoltaic cell by a power converter that provides an output current at voltages useful to operate electronics or charge batteries.This invention also relates to a method for Maximum Power Point Tracking (MPPT) multiple photovoltaic cells by a power combiner that combines the output of the multiple photovoltaic cells into a single output. The power combiner is comprised of multiple power converters, one for each photovoltaic cell. Each power converter used in these methods has an input-regulating element that has an output wave form with a characteristic that is related to the photovoltaic cell voltage and current. As a result only the photovoltaic cell voltage is directly measured in these methods and the photovoltaic cell current is determined indirectly.

摘要翻译： 本发明涉及一种通过功率转换器的光伏电池的最大功率点跟踪（MPPT）方法，该功率转换器在用于操作电子装置或充电电池的电压下提供输出电流。 本发明还涉及通过将多个光伏电池的输出组合成单个输出的功率组合器的用于最大功率点跟踪（MPPT）多光伏电池的方法。 功率组合器由多个功率转换器组成，每个光伏电池一个。 在这些方法中使用的每个功率转换器具有输入调节元件，其具有与光伏电池电压和电流相关的特性的输出波形。 因此，仅在这些方法中直接测量光伏电池电压，间接地确定光电池电流。

公开(公告)号：US20100133615A1

公开(公告)日：2010-06-03

申请号：US12620265

申请日：2009-11-17

申请人： Robert Mulfinger ,  Andy Wei ,  Jan Hoentschel ,  Andrew Waite

发明人： Robert Mulfinger ,  Andy Wei ,  Jan Hoentschel ,  Andrew Waite

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66795 ,  H01L29/785

摘要： The drain and source regions of a multiple gate transistor may be formed without an epitaxial growth process by using a placeholder structure for forming the drain and source dopant profiles and subsequently masking the drain and source areas and removing the placeholder structures so as to expose the channel area of the transistor. Thereafter, corresponding fins may be patterned and a gate electrode structure may be formed. Consequently, reduced cycle times may be accomplished due to the avoidance of the epitaxial growth process.

摘要翻译： 多栅极晶体管的漏极和源极区可以通过使用用于形成漏极和源极掺杂物分布的占位符结构而形成，而不需要外延生长工艺，随后掩蔽漏极和源极区域并去除占位符结构以露出​​沟道 晶体管的面积。 此后，可以对相应的翅片进行构图，并且可以形成栅电极结构。 因此，由于避免了外延生长过程，可以实现缩短的循环时间。

公开(公告)号：US20080012018A1

公开(公告)日：2008-01-17

申请号：US11775619

申请日：2007-07-10

申请人： Andrew WAITE ,  Scott LUNING

发明人： Andrew WAITE ,  Scott LUNING

IPC分类号： H01L29/00 ,  B05D1/00

CPC分类号： H01L29/6656 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/1054 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

摘要： An MOS device having enhanced mobility and a method for its fabrication are provided. The method comprises providing a P-type monocrystalline silicon germanium substrate having a first lattice constant and a channel region at the substrate surface, forming a gate insulator layer on the substrate, forming a gate electrode having a first sidewall and a second sidewall overlying the channel. First and second recesses are etched into the substrate in alignment with the first and the second gate electrode sidewalls, respectively. The recesses are filled by epitaxially growing a layer of embedded monocrystalline semiconductor material characterized by a second lattice constant less than the first lattice constant to impart a tensile strain on the channel region.

摘要翻译： 提供了具有增强的移动性的MOS器件及其制造方法。 该方法包括提供在衬底表面上具有第一晶格常数和沟道区的P型单晶硅锗衬底，在衬底上形成栅极绝缘体层，形成具有第一侧壁和覆盖沟道的第二侧壁的栅电极 。 第一和第二凹槽分别蚀刻到与第一和第二栅电极侧壁对准的衬底中。 通过外延生长嵌入式单晶半导体材料的层来填充凹部，其特征在于小于第一晶格常数的第二晶格常数以在沟道区域上施加拉伸应变。

公开(公告)号：US20060272574A1

公开(公告)日：2006-12-07

申请号：US11147600

申请日：2005-06-07

申请人： Andrew Waite ,  Scott Luning

发明人： Andrew Waite ,  Scott Luning

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： H01L29/045 ,  H01L21/76254 ,  H01L21/823807

摘要： Methods for manufacturing an integrated circuit are provided. An exemplary method comprises the step of providing a silicon substrate having a first crystalline orientation. A silicon layer having a second crystalline orientation is bonded to the silicon substrate. The second crystalline orientation is different from the first crystalline orientation. The silicon layer is etched to expose a portion of the silicon substrate and an amorphous silicon layer is deposited on the exposed portion. The amorphous silicon layer is transformed into a regrown crystalline silicon layer having the first crystalline orientation. A first field effect transistor is formed on the silicon layer and a second field effect transistor is formed on the regrown crystalline silicon layer.

摘要翻译： 提供了制造集成电路的方法。 一种示例性方法包括提供具有第一晶体取向的硅衬底的步骤。 具有第二结晶取向的硅层与硅衬底接合。 第二结晶取向与第一结晶取向不同。 蚀刻硅层以暴露硅衬底的一部分，并且非晶硅层沉积在暴露部分上。 将非晶硅层转变成具有第一晶体取向的再结晶的晶体硅层。 在硅层上形成第一场效应晶体管，在再生晶体硅层上形成第二场效应晶体管。

公开(公告)号：US08914438B2

公开(公告)日：2014-12-16

申请号：US12970666

申请日：2010-12-16

申请人： Daniel L. Pletter ,  Andrew Waite ,  Doug Chasman ,  James K. Mooney ,  James Troup

发明人： Daniel L. Pletter ,  Andrew Waite ,  Doug Chasman ,  James K. Mooney ,  James Troup

IPC分类号： G06F17/00 ,  G06F15/16 ,  G06F17/30 ,  G06F9/44 ,  G06F17/22

CPC分类号： G06F8/38 ,  G06F3/0481 ,  G06F17/2247 ,  G06F17/30575 ,  H04L67/10

摘要： Methods, devices and systems for providing a user interface in an on-demand software service environment are described. Some implementations involve receiving a component request from a first client device, locating class-level definition source code for a component definition corresponding to the component request, identifying the component definition within the source code, determining a language of the component definition and selecting a parser according to the language of the component definition. Such implementations may also involve parsing the source code to create the component definition and transmitting an intermediate representation of the requested component to the client device. The intermediate representation may allow the client device to create an instance of the requested component.

摘要翻译： 描述了在点播软件服务环境中提供用户界面的方法，设备和系统。 一些实现涉及从第一客户端设备接收组件请求，定义与组件请求对应的组件定义的类级定义源代码，识别源代码内的组件定义，确定组件定义的语言并选择解析器 根据组件定义的语言。 这样的实现还可以包括解析源代码以创建组件定义并将所请求的组件的中间表示传送到客户端设备。 中间表示可以允许客户端设备创建所请求的组件的实例。

公开(公告)号：US20110283181A1

公开(公告)日：2011-11-17

申请号：US13104772

申请日：2011-05-10

申请人： Andrew Waite ,  Alan Ballard ,  K. Sagar Wanaselja ,  Richard Unger

发明人： Andrew Waite ,  Alan Ballard ,  K. Sagar Wanaselja ,  Richard Unger

IPC分类号： G06F17/00

CPC分类号： G06F11/3672

摘要： Disclosed herein are techniques for testing a page. In some implementations, an intermediate representation of a page is created. The page may be defined by a page description implemented in a markup language. The page description may refer to data accessible via a data model. The intermediate representation may include at least a portion of the data accessible via the data model. The intermediate representation may be capable of being rendered to create a rendered page. The rendered page may be capable of being displayed on a display device. A determination may be made as to whether a test value for a portion of the intermediate representation matches an expected value for the portion of the intermediate representation. When the test value does not match the expected value, an indication of an error may be stored.

摘要翻译： 这里公开了用于测试页面的技术。 在一些实现中，创建页面的中间表示。 该页面可以由以标记语言实现的页面描述来定义。 页面描述可以指通过数据模型访问的数据。 中间表示可以包括经由数据模型可访问的数据的至少一部分。 中间表示可能能够被呈现以创建呈现的页面。 渲染页面可能能够显示在显示设备上。 可以确定中间表示的一部分的测试值是否与中间表示的部分的期望值相匹配。 当测试值与期望值不匹配时，可能会存储错误的指示。

公开(公告)号：US08021942B2

公开(公告)日：2011-09-20

申请号：US12049548

申请日：2008-03-17

申请人： Andy Wei ,  Andrew Waite ,  Martin Trentzsch ,  Johannes Groschopf ,  Gunter Grasshoff ,  Andreas Ott

发明人： Andy Wei ,  Andrew Waite ,  Martin Trentzsch ,  Johannes Groschopf ,  Gunter Grasshoff ,  Andreas Ott

IPC分类号： H01L21/8238 ,  H01L21/70 ,  H01L27/092

CPC分类号： H01L21/82345 ,  H01L21/823462 ,  H01L21/823807 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/84 ,  H01L27/088 ,  H01L27/0922 ,  H01L29/66545 ,  H01L29/7843 ,  H01L29/7848 ,  Y10S438/926

摘要： In the process sequence for replacing conventional gate electrode structures by high-k metal gate structures, the number of additional masking steps may be maintained at a low level, for instance by using highly selective etch steps, thereby maintaining a high degree of compatibility with conventional CMOS techniques. Furthermore, the techniques disclosed herein enable compatibility to front-end process techniques and back-end process techniques, thereby allowing the integration of well-established strain-inducing mechanisms in the transistor level as well as in the contact level.

摘要翻译： 在通过高k金属栅极结构代替常规栅电极结构的工艺顺序中，例如通过使用高选择性蚀刻步骤，附加掩模步骤的数量可以保持在低水平，从而保持与常规栅极结构的高度兼容性 CMOS技术。 此外，本文公开的技术使得能够与前端处理技术和后端处理技术兼容，从而允许将已建立的应变诱发机制集成在晶体管级以及接触级中。

公开(公告)号：US20100289080A1

公开(公告)日：2010-11-18

申请号：US12759785

申请日：2010-04-14

申请人： Andy WEI ,  Andrew WAITE

发明人： Andy WEI ,  Andrew WAITE

IPC分类号： H01L27/06 ,  H01L21/8234 ,  H01L27/12

CPC分类号： H01L29/7848 ,  H01L21/823807 ,  H01L21/823842 ,  H01L27/0629 ,  H01L28/20

摘要： In a semiconductor device comprising sophisticated high-k metal gate structures formed in accordance with a replacement gate approach, semiconductor-based resistors may be formed above isolation structures substantially without being influenced by the replacement gate approach. Consequently, enhanced area efficiency may be achieved compared to conventional strategies, in which the resistive structures may have to be provided on the basis of a gate electrode metal, while, nevertheless, a low parasitic capacitance may be accomplished due to providing the resistive structures above the isolation structure.

摘要翻译： 在包括根据替换栅极方法形成的复杂的高k金属栅极结构的半导体器件中，半导体基电阻器可以基本上不受更换栅极方法的影响而形成在隔离结构之上。 因此，与常规策略相比，可以实现增强的面积效率，其中电阻结构可能必须基于栅电极金属提供，而尽管如此，可以通过提供上述电阻结构来实现低寄生电容 隔离结构。