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    Method of fabricating thin film transistor
    21.
    发明授权
    Method of fabricating thin film transistor 有权
    制造薄膜晶体管的方法

    公开(公告)号：US08420513B2

    公开(公告)日：2013-04-16

    申请号：US13419757

    申请日：2012-03-14

    Applicant: Ji-Su Ahn ,  Eui-Hoon Hwang ,  Cheol-Ho Yu ,  Kwang-Nam Kim ,  Sung-Chul Kim

    Inventor： Ji-Su Ahn ,  Eui-Hoon Hwang ,  Cheol-Ho Yu ,  Kwang-Nam Kim ,  Sung-Chul Kim

    IPC: H01L29/04 ,  H01L21/20

    CPC classification number: H01L29/78675 ,  H01L27/1248 ,  H01L27/1285 ,  H01L27/3262 ,  H01L29/66757

    Abstract: A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two first source/drain contact holes and a semiconductor pattern access hole therein, a gate electrode on the gate insulating layer, the gate electrode being between the two first source/drain contact holes, an interlayer insulating layer covering the gate electrode, the interlayer insulating layer having two second source/drain contact holes therein, and source and drain electrodes on the interlayer insulating layer, each of the source and drain electrodes being insulated from the gate electrode, and having a portion connected to the crystalline semiconductor pattern through the first and second source/drain contact holes.

    Abstract translation: 一种薄膜晶体管（TFT），包括在基板上的晶体半导体图形，在晶体半导体图案上的栅极绝缘层，栅极绝缘层具有两个第一源极/漏极接触孔和半导体图案访问孔，栅电极 在栅极绝缘层上，栅电极位于两个第一源极/漏极接触孔之间，覆盖栅电极的层间绝缘层，其中具有两个第二源极/漏极接触孔的层间绝缘层，以及栅电极上的源极和漏极 层间绝缘层，源极和漏极中的每一个与栅电极绝缘，并且具有通过第一和第二源极/漏极接触孔连接到晶体半导体图案的部分。

    Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same
    22.
    发明授权
    Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same 有权
    薄膜晶体管，其制造方法以及包括该薄膜晶体管的有机发光二极管显示装置

    公开(公告)号：US08158984B2

    公开(公告)日：2012-04-17

    申请号：US12458126

    申请日：2009-07-01

    Applicant: Ji-Su Ahn ,  Eui-Hoon Hwang ,  Cheol-Ho Yu ,  Kwang-Nam Kim ,  Sung-Chul Kim

    Inventor： Ji-Su Ahn ,  Eui-Hoon Hwang ,  Cheol-Ho Yu ,  Kwang-Nam Kim ,  Sung-Chul Kim

    IPC: H01L29/04

    CPC classification number: H01L29/78675 ,  H01L27/1248 ,  H01L27/1285 ,  H01L27/3262 ,  H01L29/66757

    Abstract: A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two first source/drain contact holes and a semiconductor pattern access hole therein, a gate electrode on the gate insulating layer, the gate electrode being between the two first source/drain contact holes, an interlayer insulating layer covering the gate electrode, the interlayer insulating layer having two second source/drain contact holes therein, and source and drain electrodes on the interlayer insulating layer, each of the source and drain electrodes being insulated from the gate electrode, and having a portion connected to the crystalline semiconductor pattern through the first and second source/drain contact holes.

    Abstract translation: 一种薄膜晶体管（TFT），包括在基板上的晶体半导体图形，在晶体半导体图案上的栅极绝缘层，栅极绝缘层具有两个第一源极/漏极接触孔和半导体图案访问孔，栅电极 在栅极绝缘层上，栅电极位于两个第一源极/漏极接触孔之间，覆盖栅电极的层间绝缘层，其中具有两个第二源极/漏极接触孔的层间绝缘层，以及栅电极上的源极和漏极 层间绝缘层，源极和漏极中的每一个与栅电极绝缘，并且具有通过第一和第二源极/漏极接触孔连接到晶体半导体图案的部分。

    Thin film transistor array arrangement, and organic light emitting display device
    25.
    发明授权
    Thin film transistor array arrangement, and organic light emitting display device 有权
    薄膜晶体管阵列布置，以及有机发光显示装置

    公开(公告)号：US07893440B2

    公开(公告)日：2011-02-22

    申请号：US12385792

    申请日：2009-04-20

    Applicant: Do-Hyun Kwon ,  Choong-Youl Im ,  Dae-Hyun No ,  Il-Jeong Lee ,  Cheol-Ho Yu

    Inventor： Do-Hyun Kwon ,  Choong-Youl Im ,  Dae-Hyun No ,  Il-Jeong Lee ,  Cheol-Ho Yu

    IPC: H01L29/04 ,  H01L29/47

    CPC classification number: H01L27/1255 ,  H01L27/1288 ,  H01L2227/323

    Abstract: A thin film transistor (TFT) array arrangement, an organic light emitting display device that includes the TFT array arrangement and a method of making the TFT array arrangement and the organic light emitting display device. The method seeks to reduce the number of masks used in the making of the TFT array arrangement by employing half-tone masks that are followed by a two step etching process and by forming layers of the capacitor simultaneous with the formation of layers of the source, drain and pixel electrodes. As a result, individual layers of the capacitor are on the same level and are made of the same material as ones of the layers of the source, drain and pixel electrodes. The capacitor has three electrodes spaced apart by two separate dielectric layers to result in an increased capacity capacitor without increasing the size of the capacitor.

    Abstract translation: 薄膜晶体管（TFT）阵列布置，包括TFT阵列布置的有机发光显示装置和制造TFT阵列布置的方法和有机发光显示装置。 该方法通过采用半色调掩模来减少用于制造TFT阵列布置的掩模的数量，其后面是两步蚀刻工艺，并且通过在形成层的同时形成电容层， 漏极和像素电极。 结果，电容器的各个层位于同一水平上，并且由与源极，漏极和像素电极的层相同的材料制成。 电容器具有通过两个单独的电介质层隔开的三个电极，从而在不增加电容器尺寸的情况下产生增加的容量电容器。

    ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
    26.
    发明申请
    ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
    有机发光二极管显示装置及其制造方法

    公开(公告)号：US20110031478A1

    公开(公告)日：2011-02-10

    申请号：US12712404

    申请日：2010-02-25

    Applicant: Do-Hyun KWON ,  Choong-Youl IM ,  Dae-Hyun NO ,  Jong-Mo YEO ,  Ju-Won YOON ,  Song-Yi JEON ,  Il-Jeong LEE ,  Cheol-Ho YU

    Inventor： Do-Hyun KWON ,  Choong-Youl IM ,  Dae-Hyun NO ,  Jong-Mo YEO ,  Ju-Won YOON ,  Song-Yi JEON ,  Il-Jeong LEE ,  Cheol-Ho YU

    IPC: H01L51/52 ,  H01L51/56

    CPC classification number: H01L27/3248 ,  H01L2251/5315

    Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same. The OLED display device includes a substrate having a pixel region and a non-pixel region, a buffer layer arranged on the substrate, a semiconductor layer arranged in the non-pixel region of the substrate, a first electrode arranged in the non-pixel region and in the pixel region and electrically connected to the semiconductor layer, a gate insulating layer arranged on an entire surface of the substrate and partially exposing the first electrode in the pixel region, a gate electrode arranged on the gate insulating layer to correspond to the semiconductor layer, a pixel defining layer partially exposing the first electrode, an organic layer arranged on the first electrode; and a second electrode arranged on the entire surface of the substrate.

    Abstract translation: 一种有机发光二极管（OLED）显示装置及其制造方法。 OLED显示装置包括具有像素区域和非像素区域的衬底，布置在衬底上的缓冲层，布置在衬底的非像素区域中的半导体层，布置在非像素区域中的第一电极 并且在所述像素区域中并且电连接到所述半导体层，栅极绝缘层，布置在所述衬底的整个表面上并且部分地暴露所述像素区域中的所述第一电极;栅极，布置在所述栅极绝缘层上以对应于所述半导体 层，部分地暴露第一电极的像素限定层，布置在第一电极上的有机层; 以及布置在所述基板的整个表面上的第二电极。

    FLAT PANEL DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
    27.
    发明申请
    FLAT PANEL DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权
    平板显示装置及其制造方法

    公开(公告)号：US20100193790A1

    公开(公告)日：2010-08-05

    申请号：US12647055

    申请日：2009-12-24

    Applicant: Jong-Mo YEO ,  Dae-Hyun No ,  Do-Hyun Kwon ,  Choong-Youl Im ,  Soo-Beon Jo ,  Sung-Won Doh ,  Il-Jeong Lee ,  Cheol-Ho Yu

    Inventor： Jong-Mo YEO ,  Dae-Hyun No ,  Do-Hyun Kwon ,  Choong-Youl Im ,  Soo-Beon Jo ,  Sung-Won Doh ,  Il-Jeong Lee ,  Cheol-Ho Yu

    IPC: H01L33/00 ,  H01L21/28

    CPC classification number: H01L27/3248 ,  H01L27/1255 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/4908 ,  H01L51/5206 ,  H01L2227/323

    Abstract: A flat panel display apparatus that can be manufactured with less patterning operations using a mask, and a method of manufacturing the same, the flat panel display apparatus including a substrate; an active layer of a thin film transistor (TFT); a first bottom electrode and a first top electrode of a capacitor; a first insulation layer formed on the substrate; a gate bottom electrode and a gate top electrode corresponding to the channel region; a second bottom electrode and a second top electrode of the capacitor; a pixel bottom electrode and a pixel top electrode; a second insulation layer formed on the gate electrode, the second electrode of the capacitor, and the pixel top electrode; and a source electrode and a drain electrode formed on the second insulation layer.

    Abstract translation: 一种平板显示装置，其可以使用掩模进行较少的图案化操作而制造，及其制造方法，所述平板显示装置包括基板; 薄膜晶体管（TFT）的有源层; 电容器的第一底部电极和第一顶部电极; 形成在所述基板上的第一绝缘层; 栅极底部电极和对应于沟道区域的栅极顶部电极; 电容器的第二底部电极和第二顶部电极; 像素底电极和像素顶电极; 形成在栅电极上的第二绝缘层，电容器的第二电极和像素上电极; 以及形成在第二绝缘层上的源电极和漏电极。

    Organic light emitting diode display device and method of manufacturing the same
    29.
    发明授权
    Organic light emitting diode display device and method of manufacturing the same 有权
    有机发光二极管显示装置及其制造方法

    公开(公告)号：US08946720B2

    公开(公告)日：2015-02-03

    申请号：US12980540

    申请日：2010-12-29

    Applicant: Do-Hyun Kwon ,  Choong-Youl Im ,  Dae-Hyun No ,  Jong-Mo Yeo ,  Ju-Won Yoon ,  Il-Jeong Lee ,  Song-Yi Jeon ,  Cheol-Ho Yu

    Inventor： Do-Hyun Kwon ,  Choong-Youl Im ,  Dae-Hyun No ,  Jong-Mo Yeo ,  Ju-Won Yoon ,  Il-Jeong Lee ,  Song-Yi Jeon ,  Cheol-Ho Yu

    IPC: H01L29/04 ,  H01L21/336 ,  H01L51/52 ,  H01L27/32

    CPC classification number: H01L51/5215 ,  H01L27/3246 ,  H01L2227/323

    Abstract: An organic light emitting diode display device and a method of manufacturing the same are disclosed. The organic light emitting diode display device includes a substrate having an emission section and a non-emission section, a semiconductor layer located on the substrate, a gate dielectric layer located over an entire front surface of the substrate, a gate electrode located in correspondence to the semiconductor layer, a dielectric layer located over the entire front surface of the substrate, source and drain electrodes and a first electrode located on the dielectric layer and electrically connected to the semiconductor layer, a pixel definition layer exposing a part of the first electrode, a spacer located on the pixel definition layer and located on the non-emission section of the substrate, an organic film layer located on the first electrode, and a second electrode located over the entire front surface of the substrate.

    Abstract translation: 公开了一种有机发光二极管显示装置及其制造方法。 有机发光二极管显示装置包括具有发射部分和非发射部分的衬底，位于衬底上的半导体层，位于衬底的整个正面上的栅极电介质层，位于 所述半导体层，位于所述基板的整个前表面上的电介质层，源极和漏极以及位于所述电介质层上并电连接到所述半导体层的第一电极，暴露所述第一电极的一部分的像素限定层， 位于所述像素限定层上且位于所述基板的非发光部分上的间隔物，位于所述第一电极上的有机膜层和位于所述基板的整个前表面上的第二电极。

    Organic Light Emitting Diode Display Device and Method of Manufacturing the Same
    30.
    发明申请
    Organic Light Emitting Diode Display Device and Method of Manufacturing the Same 有权
    有机发光二极管显示装置及其制造方法

    公开(公告)号：US20110168985A1

    公开(公告)日：2011-07-14

    申请号：US12980540

    申请日：2010-12-29

    Applicant: Do-Hyun Kwon ,  Choong-Youl Im ,  Dae-Hyun No ,  Jong-Mo Yeo ,  Ju-Won Yoon ,  Il-Jeong Lee ,  Song-Yi Jeon ,  Cheol-Ho Yu

    Inventor： Do-Hyun Kwon ,  Choong-Youl Im ,  Dae-Hyun No ,  Jong-Mo Yeo ,  Ju-Won Yoon ,  Il-Jeong Lee ,  Song-Yi Jeon ,  Cheol-Ho Yu

    IPC: H01L51/52 ,  H01L51/56

    CPC classification number: H01L51/5215 ,  H01L27/3246 ,  H01L2227/323

    Abstract: An organic light emitting diode display device and a method of manufacturing the same are disclosed. The organic light emitting diode display device includes a substrate having an emission section and anon-emission section, a semiconductor layer located on the substrate, a gate dielectric layer located over an entire front surface of the substrate, a gate electrode located in correspondence to the semiconductor layer, a dielectric layer located over the entire front surface of the substrate, source and drain electrodes and a first electrode located on the dielectric layer and electrically connected to the semiconductor layer, a pixel definition layer exposing a part of the first electrode, a spacer located on the pixel definition layer and located on the non-emission section of the substrate, an organic film layer located on the first electrode, and a second electrode located over the entire front surface of the substrate.

    Abstract translation: 公开了一种有机发光二极管显示装置及其制造方法。 有机发光二极管显示装置包括具有发射部分和阴极发射部分的衬底，位于衬底上的半导体层，位于衬底的整个前表面上的栅极电介质层，对应于该衬底的栅电极 半导体层，位于基板的整个前表面上的电介质层，源极和漏极以及位于电介质层上并电连接到半导体层的第一电极，暴露第一电极的一部分的像素限定层， 位于像素限定层上且位于基板的非发光部分上的间隔物，位于第一电极上的有机膜层和位于基板的整个前表面上的第二电极。

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