公开(公告)号：US07452815B2

公开(公告)日：2008-11-18

申请号：US11148670

申请日：2005-06-09

Applicant: Jae Seok Lee ,  Kil Sung Lee

Inventor： Jae Seok Lee ,  Kil Sung Lee

IPC: H01L21/302 ,  H01L21/461

CPC classification number: C11D3/14 ,  C09G1/02 ,  C11D7/06 ,  C11D7/08 ,  C11D7/263 ,  C11D11/0047 ,  H01L21/3212

Abstract: Methods of forming integrated circuit devices use metal CMP slurry compositions having relatively low chemical etch rate and relatively high mechanical polishing rate characteristics. The relatively high mechanical polishing rate characteristics are achieved using relatively high concentrations of mechanical abrasive (e.g., ≧8 wt %) in combination with sufficient quantities of a wetting agent to inhibit micro-scratching of underlying surfaces (e.g., insulating layers, conductive vias, . . . ) being polished. The slurry compositions also include a highly stable metal-propylenediaminetetraacetate (M-PDTA) complex, which may operate to inhibit metal-oxide re-adhesion on the metal surface being polished and/or inhibit oxidation of the metal surface by chelating with the surface.

Abstract translation: 形成集成电路器件的方法使用具有相对低的化学蚀刻速率和相对高的机械抛光速率特性的金属CMP浆料组合物。 使用相对高浓度的机械磨料（例如> = 8重量％）与足够量的润湿剂组合以抑制下面的表面（例如，绝缘层，导电通孔）的微划痕来实现相对较高的机械抛光速率特性 ，...）被抛光。 浆料组合物还包括高度稳定的金属 - 丙二胺四乙酸酯（M-PDTA）络合物，其可以用于抑制正在抛光的金属表面上的金属氧化物再附着和/或通过与表面螯合来抑制金属表面的氧化。

公开(公告)号：US20080149827A1

公开(公告)日：2008-06-26

申请号：US11963662

申请日：2007-12-21

Applicant: Jae-Seok LEE ,  Heung-Bin LIM ,  Won-Kyung RYU ,  Seung-Ki CHAE ,  Yang-Koo LEE ,  Hun-Jung YI

Inventor： Jae-Seok LEE ,  Heung-Bin LIM ,  Won-Kyung RYU ,  Seung-Ki CHAE ,  Yang-Koo LEE ,  Hun-Jung YI

IPC: H01J49/26 ,  G01N21/00

CPC classification number: G01N21/94 ,  G01N21/718 ,  G01N21/9501 ,  H01L21/6838 ,  H01L21/68728 ,  H01L21/68785

Abstract: Provided is an apparatus and method for analyzing contaminants on a wafer. The apparatus includes: a wafer holder for supporting a wafer on which contaminants to be analyzed are located, a laser ablation device for irradiating a laser to the wafer to extract a discrete specimen from the wafer, an analysis cell for collecting a discrete specimen from the surface of the wafer by irradiating the laser, and an analysis device connected to the analysis cell for analyzing contaminants from the collected discrete specimen.

Abstract translation: 提供了一种用于分析晶片上的污染物的装置和方法。 该装置包括：晶片保持器，用于支撑要分析的污染物所在的晶片;激光烧蚀装置，用于将激光照射到晶片以从晶片提取离散的样本;分析单元，用于从 通过照射激光的晶片的表面，以及连接到分析单元的分析装置，用于分析来自收集的离散样本的污染物。

公开(公告)号：US20080145942A1

公开(公告)日：2008-06-19

申请号：US11955086

申请日：2007-12-12

Applicant: Hyun-Kee Hong ,  Jae-Seok Lee ,  Yang-Koo Lee ,  Hun-Jung Yi

Inventor： Hyun-Kee Hong ,  Jae-Seok Lee ,  Yang-Koo Lee ,  Hun-Jung Yi

IPC: G01N33/20

CPC classification number: G01N31/22 ,  G01N2021/7783

Abstract: Provided herein are metal detection reagents including at least one ammonium salt of Formula 1: wherein R1, R2, R3 and R4 are independently selected from the group consisting of hydrogen, C1-30 alkyl and C3-14 aryl, and X− is independently selected from the group consisting of bromide, chloride, iodide, fluoride, nitrate, phosphate and sulfate and methods of using the metal detection reagents to monitor one or more metal ion levels in a solution.

Abstract translation: 本文提供的金属检测试剂包括至少一种式1的铵盐：其中R 1，R 2，R 3和R 3 > 4 <！ - SIPO - >独立地选自氢，C 1-3 - 烷基和C 3-14-14芳基，X - SUP>独立地选自溴化物，氯化物，碘化物，氟化物，硝酸盐，磷酸盐和硫酸盐，以及使用金属检测试剂监测溶液中的一种或多种金属离子水平的方法。

公开(公告)号：US20070172952A1

公开(公告)日：2007-07-26

申请号：US11646142

申请日：2006-12-27

Applicant: Jae-Seok Lee ,  Pil-Kwon Jun ,  Sun-Hee Park ,  Mi-Ae Kim

Inventor： Jae-Seok Lee ,  Pil-Kwon Jun ,  Sun-Hee Park ,  Mi-Ae Kim

IPC: G01N31/00

CPC classification number: G01N23/2258 ,  Y10T436/108331

Abstract: A method of manufacturing a reference sample substrate for analyzing a metal contamination level includes coating an organic silica solution including metal impurities on a semiconductor substrate and forming an oxide layer on the semiconductor substrate by thermally treating the semiconductor substrate having the coated organic silica solution. The metal impurities are substantially uniformly distributed in the oxide layer and the metal impurities are positioned at predetermined portions of the oxide layer.

Abstract translation: 制造用于分析金属污染水平的参考样品基材的方法包括在半导体衬底上涂覆包含金属杂质的有机二氧化硅溶液，并通过热处理具有涂覆的有机二氧化硅溶液的半导体衬底，在半导体衬底上形成氧化物层。 金属杂质基本均匀分布在氧化物层中，金属杂质位于氧化物层的预定部分。

公开(公告)号：US20140003581A1

公开(公告)日：2014-01-02

申请号：US13535734

申请日：2012-06-28

Applicant: Kang Min HWANG ,  Hae Sung LEE ,  Jong Chul KIM ,  Jae Seok LEE

Inventor： Kang Min HWANG ,  Hae Sung LEE ,  Jong Chul KIM ,  Jae Seok LEE

IPC: H05G1/64

CPC classification number: G01T1/247 ,  G01T1/2018 ,  G01T1/24 ,  H04N5/32 ,  H04N5/361

Abstract: Described embodiments provide an X-ray detector and a method for driving the same. The X-ray detector includes: a sensor panel in which a plurality of pixels are defined, the plurality of pixels each including a photodiode for converting light corresponding to incident X-ray into an electric signal, and a switching element connected to one terminal of the photodiode to control the output of the electric signal; a light emitting unit for providing light to the photodiode; and a voltage supply unit connected to the other terminal of the photodiode to selectively supply first and second voltages different from each other.

Abstract translation: 描述的实施例提供一种X射线检测器及其驱动方法。 X射线检测器包括：传感器面板，其中限定了多个像素，所述多个像素各自包括用于将对应于入射X射线的光转换为电信号的光电二极管，以及连接到 光电二极管控制电信号的输出; 用于向光电二极管提供光的发光单元; 以及电压供给单元，连接到所述光电二极管的另一个端子，以选择性地提供彼此不同的第一和第二电压。