公开(公告)号：US20090294968A1

公开(公告)日：2009-12-03

申请号：US12537328

申请日：2009-08-07

Applicant: Jonathan D. Chapple-Sokol ,  Terence B. Hook ,  Baozhen Li ,  Thomas L. McDevitt ,  Christopher A. Ponsolle ,  Bette B. Reuter ,  Timothy D. Sullivan ,  Jeffrey S. Zimmerman

Inventor： Jonathan D. Chapple-Sokol ,  Terence B. Hook ,  Baozhen Li ,  Thomas L. McDevitt ,  Christopher A. Ponsolle ,  Bette B. Reuter ,  Timothy D. Sullivan ,  Jeffrey S. Zimmerman

IPC: H01L23/532

CPC classification number: H01L21/7684 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure for suppressing localized metal precipitate formation (LMPF) in semiconductor processing. For each metal wire that is exposed to the manufacturing environment and is electrically coupled to an N region, at least one P+ region is formed electrically coupled to the same metal wire. As a result, few excess electrons are available to combine with metal ions to form localized metal precipitate at the metal wire. A monitoring ramp terminal can be formed around and electrically disconnected from the metal wire. By applying a voltage difference to the metal wire and the monitoring ramp terminal and measuring the resulting current flowing through the metal wire and the monitoring ramp terminal, it can be determined whether localized metal precipitate is formed at the metal wire.

Abstract translation: 用于抑制半导体处理中的局部金属沉淀形成（LMPF）的结构。 对于暴露于制造环境并且电耦合到N区域的每个金属线，至少一个P +区形成为电耦合到相同的金属线。 结果，几乎没有多余的电子可用于与金属离子结合以在金属线上形成局部金属沉淀。 可以在金属线周围形成监测斜坡端子并与金属线电断开。 通过向金属线和监视斜坡端子施加电压差并测量流过金属线和监视斜坡端子的所得电流，可以确定在金属线处是否形成了局部金属沉淀物。

公开(公告)号：US5534066A

公开(公告)日：1996-07-09

申请号：US143228

申请日：1993-10-29

Applicant: James A. O'Neill ,  Michael L. Passow ,  Tina J. Cotler ,  Jonathan D. Chapple-Sokol ,  Richard A. Conti ,  Jyothi Singh

Inventor： James A. O'Neill ,  Michael L. Passow ,  Tina J. Cotler ,  Jonathan D. Chapple-Sokol ,  Richard A. Conti ,  Jyothi Singh

IPC: G01N21/33 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  C23F4/00 ,  G01N21/35 ,  H01L21/205 ,  H01L21/302 ,  H01L21/31 ,  H01L31/00 ,  B05C5/00

CPC classification number: G01N21/3504 ,  C23C16/52

Abstract: An apparatus for processing a layer on a workpiece includes a source of reactant fluid, a reaction chamber having a support for the workpiece and a fluid delivery apparatus for feeding an input fluid into the reaction chamber with the input fluid being utilized to process the material. An infrared sensor is adapted to cooperate with the fluid delivery apparatus for sensing the concentration of a component of the input fluid. The infrared sensor includes an infrared light source positioned to direct a beam of infrared light at an infrared light detector through the input fluid. The infrared light detector produces an electrical output signal indicative of the amount of light received by the detector and therefore not absorbed by the input fluid.

Abstract translation: 用于处理工件上的层的设备包括反应物流体源，具有用于工件的支撑的反应室和用于将输入流体输送到反应室中的流体输送装置，其中输入流体用于处理材料。 红外传感器适于与流体输送装置配合，用于感测输入流体的组分的浓度。 红外传感器包括红外光源，其被定位成通过输入流体引导红外光检测器处的​​红外光束。 红外光检测器产生指示由检测器接收的光量的电输出信号，因此不被输入流体吸收。

公开(公告)号：US5465859A

公开(公告)日：1995-11-14

申请号：US234899

申请日：1994-04-28

Applicant: Jonathan D. Chapple-Sokol ,  Louis L.-C. Hsu ,  Paul J.-M. Tsang ,  Chi-Min Yuan

Inventor： Jonathan D. Chapple-Sokol ,  Louis L.-C. Hsu ,  Paul J.-M. Tsang ,  Chi-Min Yuan

IPC: G03F1/28 ,  G03F1/30 ,  H01L21/027 ,  B44C1/22 ,  C23F1/02

CPC classification number: G03F1/30 ,  G03F1/28

Abstract: A subtractive method for making a Levenson type lithographic phase shift mask using a sacrificial etch monitor film in which some of the monitor film is left standing on the opaque portions of the mask. The monitor film otherwise is consumed when it is simultaneously etched with selected portions of the mask substrate to produce recesses of desired depth in the substrate. The etching is stopped upon detecting that the etched monitor film is completely consumed. The technique also is adapted for the fabrication of a RIM type lithographic phase shift mask combined with the Levenson type phase shift mask in the same mask. The technique further is adapted to include 90 degree shift transitions at the end of the Levenson line-space pairs of the mask. The monitor film left standing on the opaque portions of the mask provides self-aligned phase error correction to offset sidewall scattering in the Levenson type mask.

Abstract translation: 使用牺牲蚀刻监测膜制造莱文森型光刻相移掩模的减法方法，其中一些监测膜留在掩模的不透明部分上。 当与掩模基板的选定部分同时蚀刻时，监视器膜被消耗以在基板中产生所需深度的凹槽。 检测到蚀刻的监视膜被完全消耗后，停止蚀刻。 该技术还适用于在相同的掩模中制造与莱文森型相移掩模组合的RIM型光刻相移掩模。 该技术进一步适于在掩模的Levenson线空间对的末端包括90度移位转变。 静置在掩模的不透明部分上的监视器胶片提供自对准相位误差校正以抵消莱文森型掩模中的侧壁散射。

公开(公告)号：US5383088A

公开(公告)日：1995-01-17

申请号：US103620

申请日：1993-08-09

Applicant: Jonathan D. Chapple-Sokol ,  Richard A. Conti ,  Jeffrey P. Gambino

Inventor： Jonathan D. Chapple-Sokol ,  Richard A. Conti ,  Jeffrey P. Gambino

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01G1/01

CPC classification number: H01L27/10852 ,  H01L28/40

Abstract: A capacitor having a high dielectric constant and method of making the same is disclosed. The capacitor comprises a bottom electrode comprising a conductive oxide deposited upon a substrate by chemical vapor deposition. A dielectric layer having a high dielectric constant is deposited upon the conductive oxide. Lastly, a counter electrode is formed upon the dielectric layer.

Abstract translation: 公开了具有高介电常数的电容器及其制造方法。 电容器包括底部电极，其包括通过化学气相沉积沉积在衬底上的导电氧化物。 具有高介电常数的介电层沉积在导电氧化物上。 最后，在电介质层上形成对电极。