公开(公告)号：US5939149A

公开(公告)日：1999-08-17

申请号：US860770

申请日：1997-07-02

申请人： Jin Jang ,  Kyu Chang Park

发明人： Jin Jang ,  Kyu Chang Park

IPC分类号： C01B31/06 ,  C23C14/06 ,  C23C14/58 ,  C23C16/26 ,  C23C16/27 ,  C23F4/00 ,  C30B25/00 ,  C30B29/04 ,  H01J9/02 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  B05D3/06 ,  H05H1/00

CPC分类号： H01J9/025 ,  C23C16/26 ,  C23C16/56

摘要： The present invention relates to a method for forming substantially hydrogen free DLC layers, wherein DLC layer of thickness about 1 to 100 nanometers is deposited over a sample substrate or a field emitter array and subsequently exposed to etching plasma comprising fluorine gas, wherein during the latter step, hydrogen contained in the substrate is eliminated by chemical etching reaction with fluorine, wherein steps to form the hydrogen free DLC layer can be repeated to obtain a predetermined thickness of a DLC film.

摘要翻译： PCT No.PCT / KR96 / 00192 Sec。 371日期1997年7月2日 102（e）日期1997年7月2日PCT 1996年11月2日PCT公布。 公开号WO97 / 16580 日期1997年5月9日本发明涉及一种形成基本上无氢的DLC层的方法，其中厚度约1至100纳米的DLC层沉积在样品衬底或场致发射阵列上，随后暴露于蚀刻包含氟气的等离子体， 其中在后一步骤中，通过与氟的化学蚀刻反应来除去衬底中所含的氢，其中可以重复形成无氢DLC层的步骤以获得DLC膜的预定厚度。

公开(公告)号：US4018490A

公开(公告)日：1977-04-19

申请号：US593618

申请日：1975-07-07

申请人： Melvin Berkenblit ,  Robert O. Lussow ,  Kyu Chang Park ,  Arnold Reisman

发明人： Melvin Berkenblit ,  Robert O. Lussow ,  Kyu Chang Park ,  Arnold Reisman

IPC分类号： H01J9/385 ,  H01J9/26 ,  H01J9/395 ,  H01J9/40 ,  H01J17/16 ,  H01J9/38

CPC分类号： H01J9/261

摘要： An in situ process is disclosed for fabricating gas discharge display panels in a sequential seal, bake-out and backfill mode of operation. The single thermal cycle process involves placing unassembled panel parts in a controlled gas ambient furnace system with required seal frame, evacuating said furnace and backfilling with an appropriate ambient atmosphere to an appropriate pressure while heating the furnace. During the heating, the furnace is repeatedly evacuated to moderate vacuum and refilled to some predetermined pressure. The furnace is heated to just above the glass transition temperature of the seal frame in this evacuate-refill mode, then held for some time to achieve outgassing of both panel parts and furnace chamber. Thereafter, the furnace chamber is refilled to one atmosphere and further heated to complete the sealing of the panel. The panel is then cooled to approximately 300.degree. C, still under one atmosphere, after which the evacuate-refill cycle is continuously repeated as the temperature is lowered down to the temperature of tip-off using the refill gas for the pressurization. The panel is refilled to an appropriate pressure at elevated temperature such that at room temperature the pressure is the desired pressure and the panel is tipped off. The process of successive evacuations and backfillings at the appropriate portions of the cycle are highly desirable for cleaning of the panel parts via contaminant dilution.

摘要翻译： 公开了一种在顺序密封，烘烤和回填操作模式下制造气体放电显示面板的原位工艺。 单个热循环过程包括将未组装的面板部件放置在具有所需密封框架的受控气体环境炉系统中，在加热炉的同时将适当的环境气氛排出所述炉并回填至适当的压力。 在加热期间，将炉子反复抽空至中等真空度并再填充至一定的压力。 在这种抽空 - 再充填模式下，将炉子加热到刚好高于密封框架的玻璃化转变温度，然后保持一段时间以实现面板部件和炉室的除气。 此后，将炉室重新填充至一个大气压并进一步加热以完成面板的密封。 然后将面板冷却至约300℃，仍然在一个大气压下，随后使用再填充气体进行加压，随着温度降低到脱落温度，连续重复抽空循环。 面板在升高的温度下重新填充到适当的压力，使得在室温下，压力是期望的压力并且面板被翻倒。 在循环的适当部分进行连续排空和回填的过程非常需要通过污染物稀释来清洁面板部件。