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公开(公告)号：US20100201411A1
公开(公告)日：2010-08-12
申请号：US12459093
申请日：2009-06-26
申请人： Saeng Hwan Kim
发明人： Saeng Hwan Kim
IPC分类号： H03L7/00
CPC分类号： H03K19/0016 , G11C5/144 , G11C5/147 , G11C2207/2227
摘要： A semiconductor memory device includes a first power switch for interrupting supply of a first power voltage to a first node in a standby mode, and a second power switch connected between the first node and a second node applied with a second power voltage.
摘要翻译： 半导体存储器件包括用于在备用模式下中断向第一节点提供第一电源电压的第一电源开关和连接在第一节点和施加第二电源电压的第二节点之间的第二电源开关。
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公开(公告)号：US07750718B2
公开(公告)日：2010-07-06
申请号：US12291259
申请日：2008-11-07
申请人： Saeng Hwan Kim
发明人： Saeng Hwan Kim
IPC分类号： H03L5/00
CPC分类号： H03K19/01721 , H03K19/01707
摘要： A level shifter removes delay, which is generated at the time of transition of an input signal level, by adjusting a size of NMOS transistors to perform pull-down and pull-up operations. The level shifter includes a coupling unit for setting up a voltage level of a first node according to a voltage level of an input signal, a first buffer for transferring an output signal by buffering a signal from the first node, and a driving unit configured to receive the input signal and the output signal and drive the first node.
摘要翻译： 电平移位器通过调整NMOS晶体管的尺寸来执行下拉和上拉操作来消除在输入信号电平转变时产生的延迟。 电平移位器包括：耦合单元，用于根据输入信号的电压电平建立第一节点的电压电平;第一缓冲器，用于通过缓冲来自第一节点的信号传送输出信号;以及驱动单元，被配置为 接收输入信号和输出信号并驱动第一个节点。
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公开(公告)号：US20090302924A1
公开(公告)日：2009-12-10
申请号：US12315010
申请日：2008-11-26
申请人： Saeng Hwan Kim
发明人： Saeng Hwan Kim
IPC分类号： H03L5/00
CPC分类号： H03K3/356113
摘要： A level shifter circuit is provided that is capable of improving current drivability and executing stable operation with a low voltage by boosting a voltage level of an input signal. The level shifter circuit includes a level shifting unit for producing a boosted voltage by boosting an input signal and shifting a voltage level of the boosted voltage to output an output signal.
摘要翻译： 提供了一种电平移位器电路，其能够通过提高输入信号的电压电平来改善电流驱动能力并且以低电压执行稳定的操作。 电平移位器电路包括电平移位单元，用于通过升高输入信号和移位升压电压的电压电平来产生升压电压以输出输出信号。
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公开(公告)号：US20090116317A1
公开(公告)日：2009-05-07
申请号：US12070952
申请日：2008-02-22
申请人： Saeng Hwan Kim
发明人： Saeng Hwan Kim
CPC分类号： G11C29/83
摘要： A block repair apparatus includes a plurality of cell blocks, a block repair fuse, a block isolation control unit, and a block repair selector. The block repair fuse outputs a repair signal of the plurality of cell blocks. The block isolation control unit outputs a control signal for activating the plurality of cell blocks or electrically isolating a defective cell block of the plurality of cell blocks, in response to the block repair signal. The block repair selector outputs a block repair selection signal for replacing the defective cell block with another cell block in response to a cell block address signal.
摘要翻译： 块修复装置包括多个单元块，块修复保险丝，块隔离控制单元和块修复选择器。 块修复保险丝输出多个单元块的修复信号。 块隔离控制单元响应于块修复信号输出用于激活多个单元块的控制信号或电隔离多个单元块的有缺陷单元块。 块修复选择器响应于单元块地址信号输出用于用另一个单元块替换缺陷单元块的块修复选择信号。
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公开(公告)号：US06778456B2
公开(公告)日：2004-08-17
申请号：US10331251
申请日：2002-12-30
申请人： Saeng Hwan Kim
发明人： Saeng Hwan Kim
IPC分类号： G11C700
摘要： A temperature detector includes a pulse generator adapted to generate pulse signals based on temperature detecting signals, a first delay circuit adapted to delay the temperature detecting signals in accordance with different delay times and generate a plurality of first delayed signals, a second delay circuit adapted to delay the temperature detecting signals and generate a plurality of second delayed signals, a plurality of detectors adapted to compare the plurality of first delayed signals from the first delay circuit and the plurality of second delayed signals from the second delay circuit and generate compared values based on the pulse signals, a plurality of pads adapted to read outputs generated by the plurality of detectors, and a comparison unit adapted to compare temperature values read from the plurality of pads and current temperature values to determine an optimum detector that generates an optimum temperature value.
摘要翻译： 温度检测器包括适于基于温度检测信号产生脉冲信号的脉冲发生器，适于根据不同的延迟时间延迟温度检测信号并产生多个第一延迟信号的第一延迟电路，适于 延迟温度检测信号并产生多个第二延迟信号，多个检测器适于比较来自第一延迟电路的多个第一延迟信号和来自第二延迟电路的多个第二延迟信号，并且基于 所述脉冲信号，适于读取由所述多个检测器产生的输出的多个焊盘以及适于比较从所述多个焊盘读取的温度值和当前温度值的比较单元，以确定产生最佳温度值的最佳检测器。
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公开(公告)号：US06194954B1
公开(公告)日：2001-02-27
申请号：US09221990
申请日：1998-12-29
申请人： Saeng-Hwan Kim , Kwang-Jin Lee , Ki-Chang Chun
发明人： Saeng-Hwan Kim , Kwang-Jin Lee , Ki-Chang Chun
IPC分类号： G05F110
CPC分类号： G05F3/205 , H03K3/0315
摘要： The voltage control generator for a semiconductor device is disclosed, in which the substrate bias voltage through the oscillation period of the step-up voltage generator circuit are quickly adjusted with respect to the level variation of a corresponding voltage. The circuit according to the present invention includes a control level generator generating at least one control signal for detecting a substrate bias voltage level from a substrate of a semiconductor device and adjusting the width of an oscillation period to a set level in accordance with the detected signal, a voltage control oscillator generating a signal in which the width of an oscillation period is varied to the set level in response to an output signal from the control level generator, and a charge pump supplying a stable bias voltage to the substrate of the semiconductor device by increasing or decreasing a pumping speed in response to an output signal from the voltage control oscillator. Since the voltage control oscillator is used as an oscillator for determining the pumping period of the charge pump, it is possible to effectively control the oscillation period in accordance with the detected voltage level variation for thereby decreasing the power consumption.
摘要翻译： 公开了一种用于半导体器件的电压控制发生器，其中通过升压电压发生器电路的振荡周期的衬底偏置电压相对于相应电压的电平变化被快速调节。 根据本发明的电路包括控制电平发生器，其产生用于从半导体器件的衬底检测衬底偏置电压电平的至少一个控制信号，并且根据检测到的信号将振荡周期的宽度调整到设定电平 产生振荡周期的宽度响应于来自控制电平发生器的输出信号而变化到设定电平的信号的电压控制振荡器，以及向半导体器件的衬底提供稳定的偏置电压的电荷泵 通过响应于来自电压控制振荡器的输出信号增加或减小泵送速度。 由于电压控制振荡器用作用于确定电荷泵的泵浦周期的振荡器，因此可以根据检测到的电压电平变化来有效地控制振荡周期，从而降低功耗。
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27.发明申请公开(公告)号：US20110208471A1
公开(公告)日：2011-08-25
申请号：US12946928
申请日：2010-11-16
申请人： Seong Seop Lee , Saeng Hwan Kim
发明人： Seong Seop Lee , Saeng Hwan Kim
CPC分类号： G01K7/186 , G01K2219/00
摘要： A temperature sensor includes a counting signal generation unit, a counting signal decoding unit, an input reference voltage selection unit, and a latch pulse generation unit. The counting signal generation unit is configured to generate one or more counting signals in response to an oscillation signal. The counting signal decoding unit is configured to decode the one or more counting signals and to generate one or more test selection signals and an end signal. The input reference voltage selection unit is configured to output a first selection reference voltage or a second selection reference voltage as an input reference voltage in response to the one or more test selection signals. The latch pulse generation unit is configured to generate one or more latch pulses in response to the one or more test selection signals.
摘要翻译： 温度传感器包括计数信号生成单元，计数信号解码单元，输入基准电压选择单元和锁存脉冲生成单元。 计数信号生成部构成为响应振荡信号生成一个以上的计数信号。 计数信号解码单元被配置为对一个或多个计数信号进行解码并生成一个或多个测试选择信号和结束信号。 输入参考电压选择单元被配置为响应于一个或多个测试选择信号而输出第一选择参考电压或第二选择参考电压作为输入参考电压。 锁存脉冲产生单元被配置为响应于一个或多个测试选择信号而产生一个或多个锁存脉冲。
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公开(公告)号：US08000164B2
公开(公告)日：2011-08-16
申请号：US12724394
申请日：2010-03-15
申请人： Jin-Hong Ahn , Bong-Hwa Jeong , Saeng-Hwan Kim , Shin-Ho Chu
发明人： Jin-Hong Ahn , Bong-Hwa Jeong , Saeng-Hwan Kim , Shin-Ho Chu
CPC分类号： G11C11/406 , G11C7/20 , G11C11/40615 , G11C11/40618 , G11C11/4072 , G11C2211/4061
摘要： A method for driving a semiconductor memory device, includes initializing first data corresponding to a refresh time of each corresponding row included in a cell array; storing second data corresponding to column data included in the first row after entering a self refresh mode; setting the first data corresponding to the first row by detecting the refresh time of the first row while performing refresh operations on the other rows in the cell array according to a refresh period selected based on the corresponding first data for predetermined refresh cycles, wherein the refresh operation is not performed on the first row during the predetermined refresh cycles; restoring the second data to the first row; and repeating the above steps for the other rows to thereby set the corresponding first data until the setting step is completed for all rows or the self refresh mode expires.
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公开(公告)号：US07990203B2
公开(公告)日：2011-08-02
申请号：US11647733
申请日：2006-12-29
申请人： Saeng Hwan Kim
发明人： Saeng Hwan Kim
IPC分类号： G11C5/14
CPC分类号： G11C5/143
摘要： An internal voltage generation apparatus for a semiconductor device is disclosed. The internal voltage generation apparatus includes a power-up detector for receiving an external supply voltage and generating a power-up signal, an internal voltage generator for generating a plurality of internal voltages, and an initial level holder including a plurality of transistors for supplying the external supply voltage to the internal voltage generator in response to the power-up signal, and a plurality of passive elements connected in parallel with the transistors, respectively.
摘要翻译： 公开了一种用于半导体器件的内部电压产生装置。 内部电压产生装置包括用于接收外部电源电压并产生上电信号的上电检测器，用于产生多个内部电压的内部电压发生器，以及包括多个晶体管的初始电平保持器，用于提供 响应于上电信号对内部电压发生器的外部电源电压，以及分别与晶体管并联连接的多个无源元件。
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公开(公告)号：US07710809B2
公开(公告)日：2010-05-04
申请号：US11786594
申请日：2007-04-12
申请人： Jin-Hong Ahn , Bong-Hwa Jeong , Saeng-Hwan Kim , Shin-Ho Chu
发明人： Jin-Hong Ahn , Bong-Hwa Jeong , Saeng-Hwan Kim , Shin-Ho Chu
CPC分类号： G11C11/406 , G11C7/20 , G11C11/40615 , G11C11/40618 , G11C11/4072 , G11C2211/4061
摘要： A method for driving a semiconductor memory device, includes initializing first data corresponding to a refresh time of each corresponding row included in a cell array; storing second data corresponding to column data included in the first row after entering a self refresh mode; setting the first data corresponding to the first row by detecting the refresh time of the first row while performing refresh operations on the other rows in the cell array according to a refresh period selected based on the corresponding first data for predetermined refresh cycles, wherein the refresh operation is not performed on the first row during the predetermined refresh cycles; restoring the second data to the first row; and repeating the above steps for the other rows to thereby set the corresponding first data until the setting step is completed for all rows or the self refresh mode expires.
摘要翻译： 一种用于驱动半导体存储器件的方法，包括初始化与单元阵列中包括的每个对应行的刷新时间对应的第一数据; 在进入自刷新模式之后存储对应于包括在第一行中的列数据的第二数据; 根据对于预定的刷新周期的基于对应的第一数据选择的刷新周期，在对单元阵列中的其他行执行刷新操作的同时，通过检测第一行的刷新时间来设置与第一行对应的第一数据，其中刷新 在预定的刷新周期期间不对第一行执行操作; 将第二数据恢复到第一行; 并对其他行重复上述步骤，从而设置对应的第一数据，直到完成所有行的设置步骤或自刷新模式期满。
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