公开(公告)号：US08848443B2

公开(公告)日：2014-09-30

申请号：US13205780

申请日：2011-08-09

申请人： Saeng-Hwan Kim

发明人： Saeng-Hwan Kim

IPC分类号： G11C29/04 ,  G11C7/00 ,  H01L25/065 ,  H01L27/105 ,  H01L25/18 ,  H01L23/525 ,  H01L25/00

CPC分类号： H01L27/1052 ,  G11C29/785 ,  G11C29/81 ,  H01L23/5256 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L27/105 ,  H01L2225/06596 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor memory device includes at least one first semiconductor chip including a plurality of memory cells and a second semiconductor chip including a fuse circuit configured to repair defective cells among the memory cells of the at least one first semiconductor chip.

摘要翻译： 一种半导体存储器件包括至少一个包括多个存储器单元的第一半导体芯片和第二半导体芯片，该第二半导体芯片包括构造成修复至少一个第一半导体芯片的存储单元之间的有缺陷单元的熔丝电路。

公开(公告)号：US08331174B2

公开(公告)日：2012-12-11

申请号：US12833819

申请日：2010-07-09

申请人： Seong Nyuh Yoo ,  Duck Hwa Hong ,  Saeng Hwan Kim

发明人： Seong Nyuh Yoo ,  Duck Hwa Hong ,  Saeng Hwan Kim

IPC分类号： G11C29/00

CPC分类号： G11C29/76 ,  G11C29/785 ,  G11C29/806

摘要： A semiconductor memory device includes: a repair address generation unit configured to generate a repair address signal in response to a first address signal; a line choice address generation unit configured to generate a line choice address signal by combining the first address signal and the repair address signal according to a determination as to whether the repair address signal is to be used; and a cell line decoding unit configured to select one of a normal cell region and a redundancy cell region according to the determination, and select one of a plurality of local cell lines provided in the selected cell region in response to the line choice address signal.

摘要翻译： 半导体存储器件包括：修复地址生成单元，被配置为响应于第一地址信号产生修复地址信号; 线路选择地址生成单元，被配置为根据关于是否使用修复地址信号的确定，通过组合第一地址信号和修复地址信号来生成行选择地址信号; 以及细胞线解码单元，被配置为根据该确定来选择正常小区区域和冗余小区区域中的一个，并且响应于线路选择地址信号选择提供在所选择的小区区域中的多个本地小区线路中的一个。

公开(公告)号：US20110242917A1

公开(公告)日：2011-10-06

申请号：US12833819

申请日：2010-07-09

申请人： Seong Nyuh Yoo ,  Duck Hwa Hong ,  Saeng Hwan Kim

发明人： Seong Nyuh Yoo ,  Duck Hwa Hong ,  Saeng Hwan Kim

IPC分类号： G11C29/04

CPC分类号： G11C29/76 ,  G11C29/785 ,  G11C29/806

摘要： A semiconductor memory device includes: a repair address generation unit configured to generate a repair address signal in response to a first address signal; a line choice address generation unit configured to generate a line choice address signal by combining the first address signal and the repair address signal according to a determination as to whether the repair address signal is to be used; and a cell line decoding unit configured to select one of a normal cell region and a redundancy cell region according to the determination, and select one of a plurality of local cell lines provided in the selected cell region in response to the line choice address signal.

摘要翻译： 半导体存储器件包括：修复地址生成单元，被配置为响应于第一地址信号产生修复地址信号; 线路选择地址生成单元，被配置为根据关于是否使用修复地址信号的确定，通过组合第一地址信号和修复地址信号来生成行选择地址信号; 以及细胞线解码单元，被配置为根据该确定来选择正常小区区域和冗余小区区域中的一个，并且响应于线路选择地址信号选择提供在所选择的小区区域中的多个本地小区线路中的一个。

公开(公告)号：US20110134707A1

公开(公告)日：2011-06-09

申请号：US13024169

申请日：2011-02-09

申请人： Saeng Hwan KIM

发明人： Saeng Hwan KIM

IPC分类号： G11C29/44 ,  G11C7/10

CPC分类号： G11C29/832 ,  G11C29/785

摘要： A block isolation control circuit includes: a control signal generation unit configured to generate a control signal which is disabled when a defect occurs in a cell block and it is necessary to replace a defective cell block with a redundant cell block, or when the cell block is not selected in a test mode; and at least one switch element connected between the cell block and a bit line sense amplifier, wherein the switch element isolates the cell block from the bit line sense amplifier when the control signal is disabled.

摘要翻译： 块隔离控制电路包括：控制信号生成单元，其被配置为生成当在小区块中出现缺陷时被禁用的控制信号，并且需要用冗余小区块替换缺陷小区块，或者当小区块 未在测试模式中选择; 以及连接在单元块和位线读出放大器之间的至少一个开关元件，其中当禁止控制信号时，开关元件将单元块与位线读出放大器隔离。

公开(公告)号：US06400216B1

公开(公告)日：2002-06-04

申请号：US09718402

申请日：2000-11-24

申请人： Hack Soo Kim ,  Saeng Hwan Kim

发明人： Hack Soo Kim ,  Saeng Hwan Kim

IPC分类号： H01J1982

CPC分类号： G11C11/5628 ,  G11C7/06

摘要： A multi-driving apparatus by a multi-level detection which pluralizes a voltage detection level in order to effectively operate voltage generators in the voltage generation circuit, minimizes a level fluctuation, reduces noise influenced on a total operation of the apparatus, increases a reliability of the apparatus, and reduces the power-consumption. The multi-driving apparatus includes: a level detection circuit block which receives a step-up voltage VPP or a back-bias voltage VBB as an input, and detects different level potentials; a control circuit block for controlling an operation of each generator according to a detected potential by the level detection circuit block; an oscillation circuit block which is oscillated by an enable signal being output from the control circuit block, and generates electric vibrations; and a generation circuit block which receives a control signal from the control circuit block as an input, and is comprised of a plurality of generators being driven by an oscillation output from the oscillation circuit block.

摘要翻译： 通过多电平检测的多驱动装置，其为了有效地操作电压产生电路中的电压发生器而使电压检测电平多次化，使电平波动最小化，降低对装置的总体操作影响的噪声，提高了可靠性 该设备，并降低功耗。 多驱动装置包括：电平检测电路块，其接收升压电压VPP或反偏压VBB作为输入，并检测不同的电平电位; 控制电路块，用于根据电平检测电路块的检测电位来控制每个发生器的操作; 振荡电路块，其通过从控制电路块输出的使能信号振荡，并产生电振动; 以及生成电路块，其从控制电路块接收控制信号作为输入，并且包括由振荡电路块的振荡输出驱动的多个发生器。

公开(公告)号：US06292420B1

公开(公告)日：2001-09-18

申请号：US09604300

申请日：2000-06-26

申请人： Kang Yong Kim ,  Saeng Hwan Kim ,  Jong Hee Han

发明人： Kang Yong Kim ,  Saeng Hwan Kim ,  Jong Hee Han

IPC分类号： G11C700

CPC分类号： G11C11/406

摘要： The present invention discloses a method and a device for automatically performing a refresh operation, which can reduce power consumption in an auto refresh mode of a semiconductor memory device. The power consumption can be reduced by controlling the operation of input buffers or the operation of an input buffer generator for controlling the input buffers, during the auto refresh operation. The device for automatically performing the refresh operation in the semiconductor memory device, includes: a plurality of input buffers; an input buffer generator for controlling the operation of the plurality of input buffers; a command decoder for decoding a signal from one input buffer among the plurality of input buffers, and generating an auto refresh signal; a row active generator for generating a row active signal as the auto refresh signal is enabled; a delay generator for generating a delay signal delayed as long as a RAS cycle time according to the row active signal; and an auto refresh generator for controlling the plurality of input buffers by employing a control signal decided by the combination of the auto refresh signal from the command decoder and the delay signal from the delay generator.

摘要翻译： 本发明公开了一种自动执行刷新操作的方法和装置，其可以降低半导体存储器件的自动刷新模式中的功耗。 在自动刷新操作期间，通过控制输入缓冲器的操作或用于控制输入缓冲器的输入缓冲发生器的操作，能够降低功耗。 用于在半导体存储器件中自动执行刷新操作的装置包括：多个输入缓冲器; 用于控制多个输入缓冲器的操作的输入缓冲器发生器; 命令解码器，用于对来自多个输入缓冲器中的一个输入缓冲器的信号进行解码，并产生自动刷新信号; 用于在启用自动刷新信号时产生行有源信号的行有源发生器; 延迟发生器，用于根据行有效信号产生延迟RAS周期时间的延迟信号; 以及自动刷新发生器，用于通过采用由命令解码器的自动刷新信号和来自延迟发生器的延迟信号的组合决定的控制信号来控制多个输入缓冲器。

公开(公告)号：US09134183B2

公开(公告)日：2015-09-15

申请号：US13337210

申请日：2011-12-26

申请人： Hyun Sik Jeong ,  Saeng Hwan Kim

发明人： Hyun Sik Jeong ,  Saeng Hwan Kim

IPC分类号： G01K7/01 ,  G01K7/00

CPC分类号： G01K7/00

摘要： A temperature sensor includes: a gate voltage generation unit including a bias resistor, a first source resistor, and a first MOS transistor and configured to generate a gate voltage; and a variable voltage output unit including an output resistor, a second source resistor, and a second MOS transistor and configured to generate the variable voltage.

摘要翻译： 温度传感器包括：栅极电压产生单元，包括偏置电阻器，第一源极电阻器和第一MOS晶体管，并且被配置为产生栅极电压; 以及包括输出电阻器，第二源极电阻器和第二MOS晶体管并被配置为产生可变电压的可变电压输出单元。

公开(公告)号：US20120257648A1

公开(公告)日：2012-10-11

申请号：US13337210

申请日：2011-12-26

申请人： Hyun Sik JEONG ,  Saeng Hwan KIM

发明人： Hyun Sik JEONG ,  Saeng Hwan KIM

IPC分类号： G01K7/00

CPC分类号： G01K7/00

摘要： A temperature sensor includes: a gate voltage generation unit including a bias resistor, a first source resistor, and a first MOS transistor and configured to generate a gate voltage; and a variable voltage output unit including an output resistor, a second source resistor, and a second MOS transistor and configured to generate the variable voltage.

摘要翻译： 温度传感器包括：栅极电压产生单元，包括偏置电阻器，第一源极电阻器和第一MOS晶体管，并且被配置为产生栅极电压; 以及包括输出电阻器，第二源极电阻器和第二MOS晶体管并被配置为产生可变电压的可变电压输出单元。

公开(公告)号：US20110234194A1

公开(公告)日：2011-09-29

申请号：US12974849

申请日：2010-12-21

申请人： Jong-Ho SON ,  Saeng-Hwan Kim

发明人： Jong-Ho SON ,  Saeng-Hwan Kim

IPC分类号： G05F3/02

CPC分类号： H02M3/158 ,  G11C5/145 ,  H02M1/36 ,  H02M1/44 ,  H02M2001/008

摘要： A internal voltage generator includes a plurality of voltage level detection units, each configured to detect a voltage level of a corresponding internal voltage terminal, based on a predetermined target voltage level assigned to the corresponding internal voltage terminal, and generate a detection signal, a common internal voltage generation unit configured to generate an internal voltage through a pumping operation in response to the detection signal outputted from the voltage level detection units, and a path multiplexing unit configured to selectively output the internal voltage to one of the internal voltage terminals.

摘要翻译： 内部电压发生器包括多个电压电平检测单元，每个电压电平检测单元被配置为基于分配给相应的内部电压端子的预定目标电压电平来检测相应的内部电压端子的电压电平，并且生成检测信号，公共 内部电压产生单元，被配置为响应于从电压电平检测单元输出的检测信号，通过泵浦操作产生内部电压;以及路径多路复用单元，被配置为选择性地将内部电压输出到内部电压端子中的一个。

公开(公告)号：US08000163B2

公开(公告)日：2011-08-16

申请号：US12724393

申请日：2010-03-15

申请人： Jin-Hong Ahn ,  Bong-Hwa Jeong ,  Saeng-Hwan Kim ,  Shin-Ho Chu

发明人： Jin-Hong Ahn ,  Bong-Hwa Jeong ,  Saeng-Hwan Kim ,  Shin-Ho Chu

IPC分类号： G11C7/00 ,  G11C8/00

CPC分类号： G11C11/406 ,  G11C7/20 ,  G11C11/40615 ,  G11C11/40618 ,  G11C11/4072 ,  G11C2211/4061

摘要： A method for driving a semiconductor memory device, includes initializing first data corresponding to a refresh time of each corresponding row included in a cell array; storing second data corresponding to column data included in the first row after entering a self refresh mode; setting the first data corresponding to the first row by detecting the refresh time of the first row while performing refresh operations on the other rows in the cell array according to a refresh period selected based on the corresponding first data for predetermined refresh cycles, wherein the refresh operation is not performed on the first row during the predetermined refresh cycles; restoring the second data to the first row; and repeating the above steps for the other rows to thereby set the corresponding first data until the setting step is completed for all rows or the self refresh mode expires.

摘要翻译： 一种用于驱动半导体存储器件的方法，包括初始化与单元阵列中包括的每个对应行的刷新时间对应的第一数据; 在进入自刷新模式之后存储对应于包括在第一行中的列数据的第二数据; 根据对于预定的刷新周期的基于对应的第一数据选择的刷新周期，在对单元阵列中的其他行执行刷新操作的同时，通过检测第一行的刷新时间来设置与第一行对应的第一数据，其中刷新 在预定的刷新周期期间不对第一行执行操作; 将第二数据恢复到第一行; 并对其他行重复上述步骤，从而设置对应的第一数据，直到完成所有行的设置步骤或自刷新模式期满。