Abstract:
A semiconductor memory device changes a pulse width of an over driving signal according to operation modes, which differ by a degree of accessing memory banks during an over driving operation. An over driver supplies an RTO line of the bit line sense amplifier with an over driving voltage in response to the over driving signal and an over driving signal generator changes a pulse width of the over driving signal according to the operation modes. An increase in the VCORE due to excess supply voltage VDD in the over driving operation is prevented.
Abstract:
A light-guide plate includes a body for guiding incident light, and at least an inserting portion penetrating a portion of the body, wherein at least a light source for providing the light-guide plate with the light is inserted into the inserting portion. The inserting portion can be formed at an end portion of the body. A side surface of the body can be recessed to form the inserting portion. A light-diffusing pattern can be formed at a side surface of the inserting portion, and the side surface of the inserting portion is substantially parallel with the side surface of the body.
Abstract:
There are provided a video processing apparatus, a video processing system, and an information providing method in the video processing apparatus. The video processing apparatus includes: a communication part performing communication with a service providing server providing broadcasting services; a video processing part performing video processing with respect to the broadcasting services; an output part outputting information on the broadcasting services; and a controller controlling the communication part, the output part and the video processing part to transmit user information and viewing information with respect to the video processing apparatus to the service providing server, to receive recommendation information based on the user information and the viewing information from the service providing server, and to output the received recommendation information, respectively.
Abstract:
A semiconductor device includes a plurality of input units configured to receive a plurality of data, a plurality of latching units configured to latch output signals of the plurality of input units in response to a plurality of synchronization clock signals, and a synchronization clock generating unit configured to delay a source clock signal by a time corresponding to each of signal transmission times taken between the plurality of input units and the plurality of latching units, thereby generating the plurality of synchronization clock signals.
Abstract:
Semiconductor device and operation method thereof includes an aspect of the present invention, there is provided a clock generator configured to receive an external clock signal to generate a first clock signal corresponding to a rising edge of the external clock and a second clock signal corresponding to a falling edge of the external clock, a drive control signal generator configured to restrict an activation period of the first clock signal within a deactivation period of the second clock signal to generate a first drive control signal, and restrict an activation period of the second clock signal within a deactivation period of the first clock signal to generate a second drive control signal and an output driver configured to receive a drive data in response to the first and second drive control signal to drive an output terminal in response to the drive data.
Abstract:
Provided are an image processing apparatus and an image processing method thereof. The image processing apparatus includes: an information reader which collects information related to a search word; and a controller which selects a favorite broadcast depending on a viewing pattern and provides the information reader with the search word corresponding to the favorite broadcast.
Abstract:
A semiconductor memory device has a data masking function during a write operation. The semiconductor memory device includes a data mask input unit that receives a data mask signal. A data input unit receives data and delays the output of the data more than the output of the data mask signal. A write driver selectively drives the data outputted from the data input unit according to the data mask signal outputted from the data mask input unit. The semiconductor memory device ensures that the data mask signal is inputted into the write driver prior to the input of the data, thus preventing a timing mismatch between data and the data masking signal and poor data masking.
Abstract:
In a two-way backlight assembly and a two-way LCD apparatus, the two-way backlight assembly provides light emitted from one light source to a first direction where a main LCD panel is placed and to a second direction where a sub LCD panel is placed. Also, a sub mold part for receiving the sub LCD panel comprises a black-colored material so as to prevent reflection of the light. Accordingly, thickness and power consumption of the backlight assembly may be reduced and display quality may be also improved by preventing leakage of the light at ends of the sub LCD panel.
Abstract:
A semiconductor memory apparatus include an internal tuning unit that can tune a generation timing of a data input strobe signal according to input timings of an input data and a data strobe clock signal, and a data input sense amplifier that can transmit data bits to a global line in response to the data input strobe signal.
Abstract:
A backlight assembly includes a light source, a light-guide plate, a mold frame and a bottom chassis. The mold frame includes a first bottom portion, a protrusion on a first surface of the first bottom portion and a first sidewall portion on a second surface of the first bottom portion opposite to the first surface of the first bottom portion and facing the light guide plate. The bottom chassis includes a second bottom portion having a hole to receive the protrusion of the first bottom portion, and a second sidewall portion facing the light guide plate. A cross sectional area of a first opening of the hole corresponding to an inner surface of the bottom chassis and contacting the first surface of mold frame is different than a cross sectional area of a second opening of the hole corresponding to an outer surface of the bottom chassis.