摘要:
An adsorbent for removing hepatitis C virus which has the ability to adsorb HCV particles, particularly immune-complex HCV particles, from a patient's body blood safely and with high efficiency and high selectivity for enhancing the efficacy of interferon therapy, an HCV adsorption apparatus including said adsorbent, and a adsorbing method for removing HCV are provided. An adsorbent for removing hepatitis C virus which comprises a compound capable of adsorbing hepatitis C virus as immobilized on a water-insoluble carrier, an adsorption apparatus including said adsorbent, and an adsorbing method for removing HCV.
摘要:
Provided are: a method of assessing hepatocellular carcinoma by using a protein with a different phosphorylated state in hepatocellular carcinoma cells compared with non-hepatocellular carcinoma cells; and a hepatocellular carcinoma protein marker for detecting hepatocellular carcinoma formed of the protein. The hepatocellular carcinoma protein marker for detecting hepatocellular carcinoma includes tumor rejection antigen gp96 formed of the amino acid represented by SEQ ID NO: 1, and is measured for its phosphorylated state to detect the presence or absence of hepatocellular carcinoma.
摘要翻译:提供:与非肝细胞癌细胞相比,通过使用肝细胞癌细胞中具有不同磷酸化状态的蛋白质来评估肝细胞癌的方法; 和用于检测由蛋白质形成的肝细胞癌的肝细胞癌蛋白标记物。 用于检测肝细胞癌的肝细胞癌蛋白标志物包括由SEQ ID NO:1表示的氨基酸形成的肿瘤排斥抗原gp96,并测量其磷酸化状态以检测肝细胞癌的存在或不存在。
摘要:
A manufacturing method of a semiconductor device 10 includes forming a plurality of second conductive second semiconductor regions at specific intervals on one main surface of a first conductive first semiconductor region, the plurality of second conductive second semiconductor regions being opposite to the first conductive first semiconductor region, forming a plurality of the first conductive third semiconductor regions on a main surface of the second semiconductor region, the plurality of the first conductive third regions being separated from each other, forming a plurality of holes at specific intervals on an another main surface which faces the one main surface of the first semiconductor region, the plurality of holes being separated from each other, forming a pair of adjacent second conductive fourth semiconductor regions which are alternately connected at a bottom part of the hole within the first semiconductor region, and burying an electrode within the hole.
摘要:
There is formed on a semiconductor substrate a lamination of a first insulating film of nondoped silicon glass or the like and, on this first insulating film, a second insulating film of boron phosphor silicate glass or the like, with a conductor layer between the two insulating films. A hole is first dry-etched in the second insulating film, leaving the substrate surface covered by the first insulating film. Then the second insulating film is heated to a reflow temperature such that the hole is thermally deformed, flaring as it extends away from the insulating film. Then a second hole is dry-etched in the first insulating film through the first recited hole in the second insulating film, with the consequent exposure of the semiconductor surface. Then a contract electrode is fabricated by filling the first and the second hole with an electroconductive material into direct contact with the substrate surface. Being covered by the first insulating film, the substrate surface is not to be contaminated with impurities during the heating of the second insulating film.