HEPATOCELLULAR CARCINOMA PROTEIN MARKER, AND METHOD FOR DETECTION OF HEPATOCELLULAR CARCINOMA USING THE SAME
    22.
    发明申请
    HEPATOCELLULAR CARCINOMA PROTEIN MARKER, AND METHOD FOR DETECTION OF HEPATOCELLULAR CARCINOMA USING THE SAME 失效
    肝细胞癌蛋白标记物及使用其检测肝细胞癌的方法

    公开(公告)号:US20100248256A1

    公开(公告)日:2010-09-30

    申请号:US12452216

    申请日:2008-06-16

    IPC分类号: G01N33/53 C07K14/435

    CPC分类号: C07K14/4748 G01N33/57438

    摘要: Provided are: a method of assessing hepatocellular carcinoma by using a protein with a different phosphorylated state in hepatocellular carcinoma cells compared with non-hepatocellular carcinoma cells; and a hepatocellular carcinoma protein marker for detecting hepatocellular carcinoma formed of the protein. The hepatocellular carcinoma protein marker for detecting hepatocellular carcinoma includes tumor rejection antigen gp96 formed of the amino acid represented by SEQ ID NO: 1, and is measured for its phosphorylated state to detect the presence or absence of hepatocellular carcinoma.

    摘要翻译: 提供:与非肝细胞癌细胞相比,通过使用肝细胞癌细胞中具有不同磷酸化状态的蛋白质来评估肝细胞癌的方法; 和用于检测由蛋白质形成的肝细胞癌的肝细胞癌蛋白标记物。 用于检测肝细胞癌的肝细胞癌蛋白标志物包括由SEQ ID NO:1表示的氨基酸形成的肿瘤排斥抗原gp96,并测量其磷酸化状态以检测肝细胞癌的存在或不存在。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    23.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号:US20090315071A1

    公开(公告)日:2009-12-24

    申请号:US12482060

    申请日:2009-06-10

    IPC分类号: H01L29/732 H01L21/331

    摘要: A manufacturing method of a semiconductor device 10 includes forming a plurality of second conductive second semiconductor regions at specific intervals on one main surface of a first conductive first semiconductor region, the plurality of second conductive second semiconductor regions being opposite to the first conductive first semiconductor region, forming a plurality of the first conductive third semiconductor regions on a main surface of the second semiconductor region, the plurality of the first conductive third regions being separated from each other, forming a plurality of holes at specific intervals on an another main surface which faces the one main surface of the first semiconductor region, the plurality of holes being separated from each other, forming a pair of adjacent second conductive fourth semiconductor regions which are alternately connected at a bottom part of the hole within the first semiconductor region, and burying an electrode within the hole.

    摘要翻译: 半导体器件10的制造方法包括在第一导电第一半导体区域的一个主表面上以特定间隔形成多个第二导电第二半导体区域,所述多个第二导电第二半导体区域与第一导电第一半导体区域相对 在所述第二半导体区域的主表面上形成多个所述第一导电第三半导体区域,所述多个所述第一导电第三区域彼此分离,在另一个主表面上以特定间隔形成多个孔,所述另一个主表面 第一半导体区域的一个主表面,多个孔彼此分离,形成一对相邻的第二导电第四半导体区域,其在第一半导体区域内的孔的底部交替连接,并且将 电极内孔。

    Method of forming low-resistance contact electrodes in semiconductor devices

    公开(公告)号:US06524949B2

    公开(公告)日:2003-02-25

    申请号:US10003192

    申请日:2001-10-29

    IPC分类号: H01L214763

    CPC分类号: H01L21/76804

    摘要: There is formed on a semiconductor substrate a lamination of a first insulating film of nondoped silicon glass or the like and, on this first insulating film, a second insulating film of boron phosphor silicate glass or the like, with a conductor layer between the two insulating films. A hole is first dry-etched in the second insulating film, leaving the substrate surface covered by the first insulating film. Then the second insulating film is heated to a reflow temperature such that the hole is thermally deformed, flaring as it extends away from the insulating film. Then a second hole is dry-etched in the first insulating film through the first recited hole in the second insulating film, with the consequent exposure of the semiconductor surface. Then a contract electrode is fabricated by filling the first and the second hole with an electroconductive material into direct contact with the substrate surface. Being covered by the first insulating film, the substrate surface is not to be contaminated with impurities during the heating of the second insulating film.