High performance capacitors using nano-structure multilayer materials
fabrication
    21.
    发明授权
    High performance capacitors using nano-structure multilayer materials fabrication 失效
    高性能电容器采用纳米结构多层材料制造

    公开(公告)号:US5414588A

    公开(公告)日:1995-05-09

    申请号:US122940

    申请日:1993-09-20

    摘要: A high performance capacitor fabricated from nano-structure multilayer materials, such as by controlled, reactive sputtering, and having very high energy-density, high specific energy and high voltage breakdown. The multilayer capacitors, for example, may be fabricated in a "notepad" configuration composed of 200-300 alternating layers of conductive and dielectric materials so as to have a thickness of 1 mm, width of 200 mm, and length of 300 mm, with terminals at each end of the layers suitable for brazing, thereby guaranteeing low contact resistance and high durability. The "notepad" capacitors may be stacked in single or multiple rows (series-parallel banks) to increase the voltage and energy density.

    摘要翻译: 由纳米结构多层材料制成的高性能电容器,例如通过受控的反应溅射,并且具有非常高的能量密度,高的比能和高压击穿。 例如,多层电容器可以以由200-300个导电和介电材料交替层组成的“记事本”构造制成,以便具有1mm,宽度200mm,长度为300mm的厚度, 适用于钎焊的各个端部的端子,从而保证低接触电阻和高耐久性。 “记事本”电容器可以以单行或多行(串联 - 并联组)堆叠,以增加电压和能量密度。

    Multilayer diffraction grating
    22.
    发明授权
    Multilayer diffraction grating 失效
    多层衍射光栅

    公开(公告)号:US4915463A

    公开(公告)日:1990-04-10

    申请号:US259564

    申请日:1988-10-18

    IPC分类号: G02B5/18

    CPC分类号: G02B5/1838

    摘要: This invention is for a reflection diffraction grating that functions at X-ray to VUV wavelengths and at normal angles of incidence. The novel grating is comprised of a laminar grating of period D with flat-topped grating bars. A multiplicity of layered synthetic microstructures, of period d and comprised of alternating flat layers of two different materials, are disposed on the tops of the grating bars of the laminar grating. In another embodiment of the grating, a second multiplicity of layered synthetic microstructures are also disposed on the flat faces, of the base of the grating, between the bars. D is in the approximate range from 3,000 to 50,000 Angstroms, but d is in the approximate range from 10 to 400 Angstroms. The laminar grating and the layered microstructures cooperatively interact to provide many novel and beneficial instrumentational advantages.

    摘要翻译: 本发明是用于在X射线至VUV波长和正常入射角下起作用的反射衍射光栅。 新型光栅由周期D的层状光栅组成,具有平顶光栅条。 在层状光栅的光栅的顶部设置多个层状的合成微结构,周期d并由两个不同材料的交替的平坦层构成。 在光栅的另一个实施例中,第二多层分层的合成微结构也被布置在光栅的基底的平面之间。 D在大约3000至50,000埃的范围内,但d在大约10至400埃的范围内。 层状光栅和层状微结构协同相互作用,提供许多新颖有益的仪器优点。

    Selectively-etched nanochannel electrophoretic and electrochemical devices
    23.
    发明授权
    Selectively-etched nanochannel electrophoretic and electrochemical devices 失效
    选择性蚀刻的纳米通道电泳和电化学装置

    公开(公告)号:US07067351B2

    公开(公告)日:2006-06-27

    申请号:US10864778

    申请日:2004-06-08

    IPC分类号: H01L21/44

    CPC分类号: B82Y30/00 C23F1/02

    摘要: Nanochannel electrophoretic and electrochemical devices having selectively-etched nanolaminates located in the fluid transport channel. The normally flat surfaces of the nanolaminate having exposed conductive (metal) stripes are selectively-etched to form trenches and baffles. The modifications of the prior utilized flat exposed surfaces increase the amount of exposed metal to facilitate electrochemical redox reaction or control the exposure of the metal surfaces to analytes of large size. These etched areas variously increase the sensitivity of electrochemical detection devices to low concentrations of analyte, improve the plug flow characteristic of the channel, and allow additional discrimination of the colloidal particles during cyclic voltammetry.

    摘要翻译: 纳米通道电泳和电化学装置具有位于流体输送通道中的选择性蚀刻的纳米级氨基酸盐。 具有暴露的导电(金属)条纹的纳米材料的通常平坦表面被选择性蚀刻以形成沟槽和挡板。 现有利用的平坦暴露表面的改进增加暴露的金属的量以促进电化学氧化还原反应或控制金属表面暴露于大尺寸分析物。 这些蚀刻区域将电化学检测装置的灵敏度各不相同地提高到低浓度的分析物,改善了通道的插塞流动特性,并允许在循环伏安法期间对胶体颗粒进行额外的鉴别。

    Method for forming a barrier layer
    24.
    发明授权
    Method for forming a barrier layer 失效
    形成阻挡层的方法

    公开(公告)号:US06339020B1

    公开(公告)日:2002-01-15

    申请号:US09567513

    申请日:2000-05-09

    IPC分类号: H01L214763

    摘要: Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr3C2), tungsten carbide (WC), and molybdenum carbide (MoC).

    摘要翻译: 立方或亚稳态立方难熔金属碳化物作为阻挡层,以在半导体制造中分离,粘附和钝化铜。 金属碳化物的一个或多个阻挡层与铜金属化结合沉积以形成特征在于具有强(100)结构的立方晶体结构的多层。 合适的阻挡层材料包括耐火过渡金属碳化物,如碳化钒(VC),碳化铌(NbC),碳化钽(TaC),碳化铬(Cr3C2),碳化钨(WC)和碳化钼(MoC)。

    Layered and homogeneous films of aluminum and aluminum/silicon with titanium and tungsten for multilevel interconnects
    25.
    再颁专利
    Layered and homogeneous films of aluminum and aluminum/silicon with titanium and tungsten for multilevel interconnects 有权
    具有钛和钨的铝和铝/硅的分层和​​均匀的薄膜用于多层互连

    公开(公告)号:USRE37032E1

    公开(公告)日:2001-01-30

    申请号:US09253492

    申请日:1999-02-19

    IPC分类号: H01L2912

    摘要: Layered structures (e.g., Al-Si/Ti/Al-Si . . . ) and homogeneous alloys of aluminum and aluminum/1 at. % silicon with titanium and tungsten and other refractory metals have been found to significantly reduce hillock densities in the films when small amounts of titanium or tungsten are homogeneously added. However, the resistivity of the films can become excessive. In addition, a new type of low density hillock can form. Layering of the films eliminates all hillocks and results in films of low resistivity. Such layered and homogeneous films made with Al-Si and Ti were found to be dry etchable. Electrical shorts in test structures with two levels of metal and LPCVD SiO2 as an interlayer dielectric have been characterized and layered films using Al-Si and Ti gave excellent results.

    摘要翻译: 层状结构(例如Al-Si / Ti / Al-Si ...)和铝和铝/ 1的均匀合金。 已经发现,当少量的钛或钨被均匀地加入时,已经发现具有钛和钨和其它难熔金属的%硅显着降低膜中的小丘密度。 然而,膜的电阻率可能变得过大。 另外,可以形成一种新型的低密度小丘。 膜的分层消除了所有的小丘并导致低电阻率的薄膜。 发现用Al-Si和Ti制成的这种层状和均匀的膜是可干蚀刻的。 已经表征了具有两层金属和LPCVD SiO2作为层间电介质的测试结构中的电短路,并且使用Al-Si和Ti的分层膜具有优异的结果。