公开(公告)号：US06696344B1

公开(公告)日：2004-02-24

申请号：US10384947

申请日：2003-03-10

申请人： Shian-Jyh Lin ,  Hsin-Jung Ho ,  Chao-Sung Lai ,  Tzu-Ching Tsai

发明人： Shian-Jyh Lin ,  Hsin-Jung Ho ,  Chao-Sung Lai ,  Tzu-Ching Tsai

IPC分类号： H01L218242

CPC分类号： H01L27/1087

摘要： A method for forming a bottle-shaped trench. A semiconductor substrate having a pad stack layer thereon and a trench in a predetermined position is provided. A first dielectric layer is then formed on the lower sidewalls of the trench. Next, a second dielectric layer is formed to cover the upper sidewalls of the trench and the pad stack layer. Then, a protection layer is formed on the sidewalls portions of the second dielectric layer. The first dielectric layer is then removed to expose the lower portion of trench. Wet stripping is then carried out to increase the radius of the lower portion of the trench thereby forming a bottle-shaped trench.

摘要翻译： 一种用于形成瓶形沟槽的方法。 提供其上具有衬垫叠层的半导体衬底和处于预定位置的沟槽。 然后在沟槽的下侧壁上形成第一电介质层。 接下来，形成第二电介质层以覆盖沟槽和衬垫叠层层的上侧壁。 然后，在第二电介质层的侧壁部分上形成保护层。 然后去除第一电介质层以暴露沟槽的下部。 然后进行湿剥离以增加沟槽下部的半径，从而形成瓶形沟槽。

公开(公告)号：US06541347B2

公开(公告)日：2003-04-01

申请号：US09740827

申请日：2000-12-21

申请人： Tzu Ching Tsai ,  Han Chih Lin ,  Hui Min Mao

发明人： Tzu Ching Tsai ,  Han Chih Lin ,  Hui Min Mao

IPC分类号： H01L2120

CPC分类号： H01L27/1087 ,  G03F7/16

摘要： A method of improving planarity of a photoresist. Before coating the photoresist over a silicon oxide layer, modifying a surface of the silicon oxide layer to enhance an adhesion between the silicon oxide layer and the photoresist. The photoresist flows into trenches of the silicon oxide layer, then the photoresist has good planarity, even after performing a baking process.

摘要翻译： 提高光致抗蚀剂平坦度的方法。 在将光致抗蚀剂涂覆在氧化硅层上之前，改变氧化硅层的表面以增强氧化硅层和光致抗蚀剂之间的粘附。 光致抗蚀剂流入氧化硅层的沟槽，即使在进行烘烤处理之后，光致抗蚀剂也具有良好的平坦度。

公开(公告)号：US20120231648A1

公开(公告)日：2012-09-13

申请号：US13046708

申请日：2011-03-12

申请人： TERRANCE F. LITTLE ,  CHIA-PIN LIU ,  DING-CHERNG CHEN ,  TZU-CHING TSAI

发明人： TERRANCE F. LITTLE ,  CHIA-PIN LIU ,  DING-CHERNG CHEN ,  TZU-CHING TSAI

IPC分类号： H01R13/62

CPC分类号： H01R12/716 ,  H01R12/7029 ,  H01R12/73

摘要： A connector assembly (1000) includes a first connector (100) having a first insulative housing (11), a plurality of first terminals (12) supported by the first insulative housing and at least one latching member (13) combined with the first insulative housing, the latching member (13) having two locking arms (132) spaced apart from each other along a longitudinal direction; a second connector (200) having a second insulative housing (21), a plurality of second terminals (22) supported by the second insulative housing and at least one clasping member (23) combined with the second insulative housing, the clasping member (23) having a rigid longitudinal bar (232) with two free ends protruding at opposite directions; and wherein the rigid longitudinal bar is sandwiched between the two locking arms and the two free ends engaged with the two locking arms when the first connector mates with the second connector.

摘要翻译： 连接器组件（1000）包括具有第一绝缘壳体（11）的第一连接器（100），由第一绝缘壳体支撑的多个第一端子（12）和与第一绝缘壳体 所述闩锁构件（13）具有沿着纵向方向彼此间隔开的两个锁定臂（132）; 具有第二绝缘壳体（21）的第二连接器（200），由所述第二绝缘壳体支撑的多个第二端子（22）和与所述第二绝缘壳体组合的至少一个夹紧构件（23），所述夹紧构件 ）具有刚性纵向杆（232），两个自由端在相反方向突出; 并且其中当所述第一连接器与所述第二连接器配合时，所述刚性纵向杆夹在所述两个锁定臂之间并且所述两个自由端与所述两个锁定臂接合。

公开(公告)号：US08133067B2

公开(公告)日：2012-03-13

申请号：US12778963

申请日：2010-05-12

申请人： Tzu-Ching Tsai ,  Xiao-Dong Wang

发明人： Tzu-Ching Tsai ,  Xiao-Dong Wang

IPC分类号： H01R13/15

CPC分类号： H01R12/79 ,  H01R12/88

摘要： An electrical connector for connecting a flexible printed circuit board comprises an insulator, a plurality of terminals and an actuator mounting onto the insulator. The insulator comprises a top wall, a bottom wall opposite to the top wall and a pair of side wall joining with the top wall and the bottom wall thereby defining a cavity therebetween. The terminals arranged exposed into the cavity. The actuator can rotate between an opened position where the flexible printed circuit board can be inserted into the cavity and a closed position where the flexible printed circuit board can be abutted against the terminals. A post protrudes from the bottom wall. The actuator defines a locking beam for locking with the post and a through hole for receiving the post when the actuator is located at the closed position.

摘要翻译： 用于连接柔性印刷电路板的电连接器包括绝缘体，多个端子和安装在绝缘体上的致动器。 绝缘体包括顶壁，与顶壁相对的底壁和与顶壁和底壁接合的一对侧壁，从而在其间限定空腔。 端子布置成暴露在空腔中。 致动器可以在柔性印刷电路板可以插入空腔的打开位置和柔性印刷电路板可以抵靠端子的关闭位置之间旋转。 柱从底壁突出。 致动器限定了用于与柱一起锁定的锁定梁和当致动器位于关闭位置时用于接收柱的通孔。

公开(公告)号：US20110212636A1

公开(公告)日：2011-09-01

申请号：US13036055

申请日：2011-02-28

申请人： TZU-CHING TSAI ,  KAI-LI WANG

发明人： TZU-CHING TSAI ,  KAI-LI WANG

IPC分类号： H01R13/62

CPC分类号： G06K13/08

摘要： An electrical card connector includes an insulative housing, a number of contacts and a push-push mechanism. The push-push mechanism includes a slider, an elastic member for driving the slider and a locking arm fixed to the slider. The locking arm includes a hook protruding into a card receiving space for locking with the card when the card is fully inserted into the card receiving space at a card locking position. When the card is ejected under a normal speed, the locking arm can be outwardly deformed to disengage from the card at a card release position. When the card is ejected under an abnormal speed faster than the normal speed, the slider gets over the card release position where the locking arm is restricted by a stop member to prevent the hook from releasing the card.

摘要翻译： 电卡连接器包括绝缘壳体，多个触点和推 - 推机构。 推动机构包括滑块，用于驱动滑块的弹性构件和固定到滑块的锁定臂。 当卡在卡锁定位置完全插入卡容纳空间时，锁定臂包括突出到卡接收空间中的钩子，用于与卡锁定。 当卡以正常速度弹出时，锁定臂可以向外变形以在卡释放位置脱离卡。 当卡片以比正常速度快的异常速度弹出时，滑块越过卡片释放位置，锁定臂被止动构件限制，以防止钩子释放卡片。

公开(公告)号：US07892035B2

公开(公告)日：2011-02-22

申请号：US12542714

申请日：2009-08-18

申请人： Tzu-Ching Tsai ,  Kuo-Chun Hsu

发明人： Tzu-Ching Tsai ,  Kuo-Chun Hsu

IPC分类号： H01R24/00

CPC分类号： H01R12/714 ,  H01R12/721 ,  H01R13/6594 ,  H01R27/02 ,  Y10S439/946

摘要： An electrical card connector includes a first insulative housing (1), a number of first contacts (2) mounted in the first housing and having a first soldering portion (22), a second insulative housing (4) located behind the first housing, a number of second contacts (5) mounted in the second housing and having a second soldering portion (51), and a shell (6) covering the first housing and the second housing. The first housing and the second housing is separated each other. A gap (9) is formed between the shell and the second housing. The second housing with the second contacts moves around the gap, corresponding to the first housing, and then the second soldering portion is adjusted, the first soldering portion and the second soldering portion are in coplanar, and soldered on the PCB without missing.

摘要翻译： 电卡连接器包括第一绝缘壳体（1），安装在第一壳体中并具有第一焊接部分（22）的多个第一触头（2），位于第一壳体后面的第二绝缘壳体（4） 安装在第二壳体中并具有第二焊接部分（51）的第二触点（5）的数量，以及覆盖第一壳体和第二壳体的壳体（6）。 第一壳体和第二壳体彼此分离。 在壳体和第二壳体之间形成间隙（9）。 具有第二触头的第二壳体围绕第一壳体的间隙移动，然后调整第二焊接部分，第一焊接部分和第二焊接部分共面，并且焊接在PCB上而不丢失。

公开(公告)号：USD587209S1

公开(公告)日：2009-02-24

申请号：US29308722

申请日：2008-07-01

申请人： Tzu-Ching Tsai ,  Ren-Chih Li

设计人： Tzu-Ching Tsai ,  Ren-Chih Li

公开(公告)号：US06977134B2

公开(公告)日：2005-12-20

申请号：US10452274

申请日：2003-06-02

申请人： Chung-Peng Hao ,  Hui-Min Mao ,  Yi-Nan Chen ,  Tzu-Ching Tsai

发明人： Chung-Peng Hao ,  Hui-Min Mao ,  Yi-Nan Chen ,  Tzu-Ching Tsai

IPC分类号： H01L21/336 ,  G03C5/00

CPC分类号： H01L29/66583

摘要： A manufacturing method for a MOSFET gate structure. The method comprises providing a substrate, sequentially depositing a pad layer and a dielectric layer thereon, defining a gate trench passing through the dielectric layer and the pad layer to expose a predetermined gate area of the substrate, sequentially forming a gate dielectric layer, a first conductive layer, a second conductive layer, and a cap layer on the exposed substrate in the gate trench to form a damascene gate structure, and removing the dielectric layer.

摘要翻译： 一种用于MOSFET栅极结构的制造方法。 该方法包括提供衬底，在其上依次沉积衬垫层和电介质层，限定通过介电层和焊盘层的栅极沟槽，以暴露衬底的预定栅极区域，顺序地形成栅极电介质层，第一 导电层，第二导电层和盖层，以形成镶嵌栅极结构，并去除介电层。

公开(公告)号：US06838866B2

公开(公告)日：2005-01-04

申请号：US10283699

申请日：2002-10-30

申请人： Tzu-Ching Tsai ,  Hui Min Mao

发明人： Tzu-Ching Tsai ,  Hui Min Mao

IPC分类号： H01L21/334 ,  H01L21/66 ,  H01L21/762 ,  H01L21/8242 ,  H01L23/544 ,  H01L27/108 ,  G01R31/26

CPC分类号： H01L22/34 ,  H01L21/76224 ,  H01L22/12 ,  H01L27/10829 ,  H01L27/10867 ,  H01L27/1087 ,  H01L29/66181

摘要： A process for measuring depth of a source and drain of a MOS transistor. The MOS transistor is formed on a semiconductor substrate on which a trench capacitor is formed and a buried strap is formed between the MOS transistor and the trench capacitor. The process includes the following steps. First, resistances of the buried strap at a plurality of different depths are measured. Next, a curve correlating the resistances with the depths is established. Next, slopes of the resistance to the depth for the curve are obtained. Finally, a depth corresponding to a minimum resistance before the slope of the resistance to the depth reaches to zero is obtained.

摘要翻译： 用于测量MOS晶体管的源极和漏极的深度的过程。 MOS晶体管形成在其上形成有沟槽电容器的半导体衬底上，并且在MOS晶体管和沟槽电容器之间形成掩埋带。 该过程包括以下步骤。 首先，测量在多个不同深度处的掩埋带的电阻。 接下来，建立将电阻与深度相关联的曲线。 接下来，获得对曲线的深度的阻力的斜率。 最后，获得与深度电阻斜率之前的最小电阻对应的深度达到零的深度。

公开(公告)号：US06831016B2

公开(公告)日：2004-12-14

申请号：US10153347

申请日：2002-05-21

申请人： Tzu-Ching Tsai ,  Ping Hsu

发明人： Tzu-Ching Tsai ,  Ping Hsu

IPC分类号： H01L21302

CPC分类号： H01L21/7684

摘要： A method to prevent electrical shorts between adjacent metal lines on a semiconductor substrate having an insulating layer with a pair of damascene structures connecting to the semiconductor substrate and a scratch on the upper surface of the insulating layer, between the damascene structures, is provided. A diffusion barrier layer is deposited on the damascene structures and the scratch. Then, a metal layer is formed to fill the damascene structures. Next, the metal is chemical-mechanically polished to form a metal line. Finally, the diffusion barrier layer disposed on the surface of the scratch is removed by etching process.

摘要翻译： 提供了防止在具有绝缘层的半导体衬底上的相邻金属线之间的电短路的方法，所述绝缘层具有连接到半导体衬底的一对镶嵌结构和在镶嵌结构之间的绝缘层的上表面上的划痕。 扩散阻挡层沉积在镶嵌结构和划痕上。 然后，形成金属层以填充镶嵌结构。 接下来，金属被化学机械抛光以形成金属线。 最后，通过蚀刻工艺去除设置在划痕表面上的扩散阻挡层。