公开(公告)号：US06696344B1

公开(公告)日：2004-02-24

申请号：US10384947

申请日：2003-03-10

申请人： Shian-Jyh Lin ,  Hsin-Jung Ho ,  Chao-Sung Lai ,  Tzu-Ching Tsai

发明人： Shian-Jyh Lin ,  Hsin-Jung Ho ,  Chao-Sung Lai ,  Tzu-Ching Tsai

IPC分类号： H01L218242

CPC分类号： H01L27/1087

摘要： A method for forming a bottle-shaped trench. A semiconductor substrate having a pad stack layer thereon and a trench in a predetermined position is provided. A first dielectric layer is then formed on the lower sidewalls of the trench. Next, a second dielectric layer is formed to cover the upper sidewalls of the trench and the pad stack layer. Then, a protection layer is formed on the sidewalls portions of the second dielectric layer. The first dielectric layer is then removed to expose the lower portion of trench. Wet stripping is then carried out to increase the radius of the lower portion of the trench thereby forming a bottle-shaped trench.

摘要翻译： 一种用于形成瓶形沟槽的方法。 提供其上具有衬垫叠层的半导体衬底和处于预定位置的沟槽。 然后在沟槽的下侧壁上形成第一电介质层。 接下来，形成第二电介质层以覆盖沟槽和衬垫叠层层的上侧壁。 然后，在第二电介质层的侧壁部分上形成保护层。 然后去除第一电介质层以暴露沟槽的下部。 然后进行湿剥离以增加沟槽下部的半径，从而形成瓶形沟槽。

公开(公告)号：US06800535B1

公开(公告)日：2004-10-05

申请号：US10645681

申请日：2003-08-21

申请人： Tzu-Ching Tsai ,  Yi-Nan Chen ,  Hsin-Jung Ho

发明人： Tzu-Ching Tsai ,  Yi-Nan Chen ,  Hsin-Jung Ho

IPC分类号： H01L2120

CPC分类号： H01L27/1087

摘要： A method for forming bottle-shaped trenches. First, a substrate is provided. Next, a hard mask with openings is formed on the substrate. The substrate is etched through the openings to form trenches with an upper portion and a lower portion. An isolated layer is formed conformally on the hard mask and in the trenches. A shield layer is formed in the lower portion of the trenches. A part of the insulating layer, which is not covered by the shield layer, is then removed. A protective layer is formed on the upper portion of the trenches. The shield layer and the isolated layer are removed. Finally, the substrate of the lower part of the trenches is wet etched using the protective layer as a mask so as to form bottle-shaped trenches.

摘要翻译： 一种用于形成瓶形沟槽的方法。 首先，提供基板。 接下来，在基板上形成具有开口的硬掩模。 通过开口蚀刻衬底以形成具有上部和下部的沟槽。 隔离层在硬掩模和沟槽中共形地形成。 在沟槽的下部形成有屏蔽层。 然后除去未被屏蔽层覆盖的绝缘层的一部分。 在沟槽的上部形成有保护层。 去除屏蔽层和隔离层。 最后，使用保护层作为掩模对沟槽下部的基底进行湿式蚀刻，以形成瓶形沟槽。

公开(公告)号：US06815356B2

公开(公告)日：2004-11-09

申请号：US10379445

申请日：2003-03-03

申请人： Tzu-Ching Tsai ,  Hsin-Jung Ho ,  Yi-Nan Chen

发明人： Tzu-Ching Tsai ,  Hsin-Jung Ho ,  Yi-Nan Chen

IPC分类号： H01L21311

CPC分类号： H01L21/76232 ,  H01L27/1087 ,  H01L29/66181

摘要： A method for forming a bottle trench in a substrate having a pad structure and a trench. First, a first insulating layer is formed in the trench, and a portion of the first insulating layer is removed to a certain depth of the trench. Next, a second insulating layer is formed in the trench, and portions of the second insulating layer on the pad structure and the sidewalls of the trench are removed. Next, an etching stop layer is formed in the trench, and a bottom portion of the etching stop layer is removed. Finally, the etching stop layer is used as a mask to remove the remaining second insulating layer and the first insulating layer.

摘要翻译： 一种在具有衬垫结构和沟槽的衬底中形成瓶沟槽的方法。 首先，在沟槽中形成第一绝缘层，并且将第一绝缘层的一部分去除到沟槽的一定深度。 接下来，在沟槽中形成第二绝缘层，并且去除衬垫结构上的第二绝缘层的部分和沟槽的侧壁。 接下来，在沟槽中形成蚀刻停止层，去除蚀刻停止层的底部。 最后，将蚀刻停止层用作掩模以去除剩余的第二绝缘层和第一绝缘层。

公开(公告)号：US08395139B1

公开(公告)日：2013-03-12

申请号：US13311576

申请日：2011-12-06

申请人： Hsin-Jung Ho ,  Chang-Rong Wu ,  Wei-Chia Chen

发明人： Hsin-Jung Ho ,  Chang-Rong Wu ,  Wei-Chia Chen

IPC分类号： H01L47/00

CPC分类号： H01L27/2454 ,  H01L45/146 ,  H01L45/1683

摘要： A memory structure includes an active area surrounded by first isolation trenches and second isolation trenches; a bit line trench recessed into the active area of the semiconductor substrate; a word line trench recessed into the active area of the semiconductor substrate and being shallower than the bit line trench. The bit line trench and the word line trench together divide the active area into four pillar-shaped sub-regions. A bit line is embedded in the bit line trench. A word line is embedded in the word line trench. A vertical transistor is built in each of the pillar-shaped sub-regions. A resistive memory element is electrically coupled to the vertical transistor.

摘要翻译： 存储器结构包括由第一隔离沟槽和第二隔离沟槽包围的有源区域; 凹陷到半导体衬底的有源区域中的位线沟槽; 凹入到半导体衬底的有源区域中且比位线沟槽浅的字线沟槽。 位线沟槽和字线沟槽将有源区域分成四个柱状子区域。 位线被嵌入位线沟槽中。 字线嵌入字线沟槽中。 每个柱状子区域内置有一个垂直晶体管。 电阻式存储器元件电耦合到垂直晶体管。

公开(公告)号：US06867089B2

公开(公告)日：2005-03-15

申请号：US10254786

申请日：2002-09-24

申请人： Yi-Nan Chen ,  Tung-Wang Huang ,  Hsin-Jung Ho ,  Hsien-Wen Liu

发明人： Yi-Nan Chen ,  Tung-Wang Huang ,  Hsin-Jung Ho ,  Hsien-Wen Liu

IPC分类号： H01L21/02 ,  H01L21/8242

CPC分类号： H01L27/1087 ,  H01L28/84

摘要： A method of forming a bottle-shaped trench for capacitor in a semiconductor substrate. First, the semiconductor substrate is selectively etched to form a trench, wherein the trench has a top portion and a bottom portion. Then, an oxide film is formed on the top portion of the trench. Next, a rugged polysilicon layer is formed on the bottom portion and the top portion of the trench. The rugged polysilicon layer and the semiconductor substrate are etched through the bottom portion of the trench by diluted ammonia solution as the etchant to form a bottle-shaped trench having a rugged surface. Next, the oxide film is removed.

摘要翻译： 一种在半导体衬底中形成用于电容器的瓶形沟槽的方法。 首先，选择性地蚀刻半导体衬底以形成沟槽，其中沟槽具有顶部和底部。 然后，在沟槽的顶部形成氧化膜。 接下来，在沟槽的底部和顶部上形成凹凸多晶硅层。 凹凸多晶硅层和半导体衬底通过稀释的氨溶液作为蚀刻剂蚀刻通过沟槽的底部，以形成具有粗糙表面的瓶形沟槽。 接下来，去除氧化膜。

公开(公告)号：US06693006B2

公开(公告)日：2004-02-17

申请号：US10322111

申请日：2002-12-17

申请人： Hsin-Jung Ho ,  Chang Rong Wu ,  Yi-Nan Chen ,  Tung-Wang Huang

发明人： Hsin-Jung Ho ,  Chang Rong Wu ,  Yi-Nan Chen ,  Tung-Wang Huang

IPC分类号： H01L218242

CPC分类号： H01L27/1087 ,  H01L21/3086 ,  H01L29/66181 ,  H01L29/945

摘要： A method for increasing area of a trench capacitor. First, a first oxide layer and a first nitride layer are sequentially formed on a substrate. An opening is formed through the first oxide layer and the first nitride layer into the substrate. A part of the first oxide layer exposed in the opening is removed to form a first recess, and then a second nitride layer is formed therein. A second oxide layer is formed in the lower portion of the opening. After a third nitride layer is formed in the upper portion of the opening, the second oxide layer is removed. The substrate in the opening is etched using the first nitride layer, the second nitride layer and the third nitride layer as a mask to form a second recess in the lower portion of the opening. The second nitride layer and the third nitride layer are then removed.

摘要翻译： 一种增加沟槽电容器面积的方法。 首先，在基板上依次形成第一氧化物层和第一氮化物层。 通过第一氧化物层和第一氮化物层形成到衬底中的开口。 去除暴露在开口中的第一氧化物层的一部分以形成第一凹部，然后在其中形成第二氮化物层。 第二氧化物层形成在开口的下部。 在开口的上部形成第三氮化物层后，除去第二氧化物层。 使用第一氮化物层，第二氮化物层和第三氮化物层作为掩模来蚀刻开口中的衬底，以在开口的下部形成第二凹部。 然后去除第二氮化物层和第三氮化物层。

公开(公告)号：US06998347B2

公开(公告)日：2006-02-14

申请号：US10605238

申请日：2003-09-17

申请人： Min-Yi Hsu ,  Hsin-Jung Ho ,  Kun-Shin Huang ,  Yi-Nan Chen ,  Kaanlu Tzou

发明人： Min-Yi Hsu ,  Hsin-Jung Ho ,  Kun-Shin Huang ,  Yi-Nan Chen ,  Kaanlu Tzou

IPC分类号： H01L21/302

CPC分类号： H01L21/02079 ,  H01L21/32134 ,  H01L21/32135

摘要： A method of reworking an integrated circuit device is described. A substrate having a dielectric layer, a barrier layer, a conductive layer and an anti-reflective layer formed thereon, is provided. The method of reworking the barrier layer, the conductive layer and the anti-reflective layer comprises removing the anti-reflection layer by performing a dry etching process, removing the conductive layer by performing a wet etching process, and then removing the barrier layer by performing a chemical machine polishing process.

摘要翻译： 描述了对集成电路器件进行返工的方法。 提供了具有形成在其上的电介质层，阻挡层，导电层和抗反射层的基板。 对阻挡层，导电层和抗反射层进行再加工的方法包括通过进行干蚀刻工艺去除抗反射层，通过进行湿蚀刻工艺去除导电层，然后通过执行 化学机械抛光工艺。

公开(公告)号：US06858516B2

公开(公告)日：2005-02-22

申请号：US10279511

申请日：2002-10-23

申请人： Tzu-En Ho ,  Chang Rong Wu ,  Hsin-Jung Ho

发明人： Tzu-En Ho ,  Chang Rong Wu ,  Hsin-Jung Ho

IPC分类号： H01L21/762 ,  H01L21/8242 ,  H01L21/76

CPC分类号： H01L21/76224

摘要： A manufacturing method of a high aspect ratio shallow trench isolation region. A substrate with a trench therein is provided and placed into a chamber. A first insulation layer is formed on the substrate as well as inside the trench by high density plasma chemical vapor deposition. The majority of the first insulation layer outside the trench is removed by in situ etching using carbon fluoride as an etching gas with high selectivity for SiO2/SiN etching ratio, and a second insulation layer is formed on the first insulation layer by high density plasma chemical vapor deposition, filling the trench. According to the present invention, a high aspect ratio shallow trench isolation region without voids can thus be achieved.

摘要翻译： 高宽比浅沟槽隔离区域的制造方法。 提供其中具有沟槽的衬底并将其放置在室中。 第一绝缘层通过高密度等离子体化学气相沉积形成在衬底上以及沟内。 通过使用氟化碳作为蚀刻气体的原位蚀刻除去沟槽外部的第一绝缘层的大部分，对SiO 2 / SiN蚀刻比率具有高选择性，并且通过高密度等离子体化学品在第一绝缘层上形成第二绝缘层 气相沉积，填充沟槽。 根据本发明，可以实现无空隙的高纵横比浅沟槽隔离区域。

公开(公告)号：US20050037622A1

公开(公告)日：2005-02-17

申请号：US10605238

申请日：2003-09-17

申请人： Min-Yi Hsu ,  Hsin-Jung Ho ,  Kun-Shin Huang ,  Yi-Nan Chen ,  Kaanlu Tzou

发明人： Min-Yi Hsu ,  Hsin-Jung Ho ,  Kun-Shin Huang ,  Yi-Nan Chen ,  Kaanlu Tzou

IPC分类号： H01L21/302 ,  H01L21/3213

CPC分类号： H01L21/02079 ,  H01L21/32134 ,  H01L21/32135

摘要： A method of reworking an integrated circuit device is described. A substrate having a dielectric layer, a barrier layer, a conductive layer and an anti-reflective layer formed thereon, is provided. The method of reworking the barrier layer, the conductive layer and the anti-reflective layer comprises removing the anti-reflection layer by performing a dry etching process, removing the conductive layer by performing a wet etching process, and then removing the barrier layer by performing a chemical machine polishing process.

摘要翻译： 描述了对集成电路器件进行返工的方法。 提供了具有形成在其上的电介质层，阻挡层，导电层和抗反射层的基板。 对阻挡层，导电层和抗反射层进行再加工的方法包括通过进行干蚀刻工艺去除抗反射层，通过进行湿蚀刻工艺去除导电层，然后通过执行 化学机械抛光工艺。

公开(公告)号：US07232718B2

公开(公告)日：2007-06-19

申请号：US10605234

申请日：2003-09-17

申请人： Chih-Han Chang ,  Hsin-Jung Ho ,  Chang-Rong Wu ,  Chien-Jung Sun

发明人： Chih-Han Chang ,  Hsin-Jung Ho ,  Chang-Rong Wu ,  Chien-Jung Sun

IPC分类号： H01L21/8242

CPC分类号： H01L27/1087

摘要： A method for forming a deep trench capacitor buried plate. A substrate having a pad oxide and a pad nitride is provided. A deep trench is formed in the substrate. A doped silicate film is deposited on a sidewall of the deep trench. A sacrificial layer is deposited in the deep trench, and etched back to expose parts of the doped silicate film. Then, an etching process is performed to remove the exposed doped silicate film and parts of the pad oxide for forming a recess. The sacrificial layer is removed. A silicon nitride layer is deposited to fill the recess and to cover the doped silicate film. Finally, a thermal oxidation process is performed to form a doped ion region. The silicon nitride layer is removed. The doped silicate film is removed.

摘要翻译： 一种形成深沟槽电容器掩埋板的方法。 提供具有衬垫氧化物和衬垫氮化物的衬底。 在衬底中形成深沟槽。 掺杂的硅酸盐膜沉积在深沟槽的侧壁上。 牺牲层沉积在深沟槽中，并被回蚀以暴露部分掺杂的硅酸盐膜。 然后，进行蚀刻处理以去除暴露的掺杂硅酸盐膜和用于形成凹槽的衬垫氧化物的一部分。 牺牲层被去除。 沉积氮化硅层以填充凹部并覆盖掺杂的硅酸盐膜。 最后，进行热氧化工艺以形成掺杂的离子区域。 去除氮化硅层。 去除掺杂的硅酸盐膜。