公开(公告)号：US20130284374A1

公开(公告)日：2013-10-31

申请号：US13793512

申请日：2013-03-11

Applicant: Dmitry LUBOMIRSKY ,  Jennifer Y. SUN ,  Senh THACH ,  Xing LIN ,  Michael D. WILLWERTH ,  Konstantin MAKHRATCHEV

Inventor： Dmitry LUBOMIRSKY ,  Jennifer Y. SUN ,  Senh THACH ,  Xing LIN ,  Michael D. WILLWERTH ,  Konstantin MAKHRATCHEV

IPC: H02N13/00

CPC classification number: H02N13/00 ,  B23B31/28 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/68792

Abstract: Embodiments of the present invention provide electrostatic chucks for operating at elevated temperatures. One embodiment of the present invention provides a dielectric chuck body for an electrostatic chuck. The dielectric chuck body includes a substrate supporting plate having a top surface for receiving a substrate and a back surface opposing the top surface, an electrode embedded in the substrate supporting plate, and a shaft having a first end attached to the back surface of the substrate supporting plate and a second end opposing the first end. The second end is configured to contact a cooling base and provide temperature control to the substrate supporting plate. The shaft is hollow having a sidewall enclosing a central opening, and two or more channels formed through the sidewall and extending from the first end to the second end.

Abstract translation: 本发明的实施例提供了用于在升高的温度下操作的静电卡盘。 本发明的一个实施例提供了一种用于静电卡盘的电介质卡盘体。 电介质卡盘体包括：基板支撑板，具有用于接收基板的顶表面和与顶表面相对的后表面;嵌入在基板支撑板中的电极;以及轴，其具有连接到基板的背面的第一端 支撑板和与第一端相对的第二端。 第二端构造成接触冷却基座并且向衬底支撑板提供温度控制。 轴是中空的，具有封闭中心开口的侧壁，以及穿过侧壁形成并且从第一端延伸到第二端的两个或更多个通道。

公开(公告)号：US20120091108A1

公开(公告)日：2012-04-19

申请号：US13097822

申请日：2011-04-29

Applicant: XING LIN ,  DOUGLAS A. BUCHBERGER, Jr. ,  XIAOPING ZHOU ,  VALENTIN TODOROW ,  ANDREW NGUYEN ,  ANCHEL SHEYNER

Inventor： XING LIN ,  DOUGLAS A. BUCHBERGER, Jr. ,  XIAOPING ZHOU ,  VALENTIN TODOROW ,  ANDREW NGUYEN ,  ANCHEL SHEYNER

IPC: H05B1/00

CPC classification number: H05B6/105 ,  H01L21/67109 ,  H01L21/6831

Abstract: Methods and apparatus for controlling the temperature of a substrate during processing are provided herein. In some embodiments, an apparatus for retaining and controlling substrate temperature may include a puck of dielectric material; an electrode disposed in the puck proximate a surface of the puck upon which a substrate is to be retained; and a plurality of heater elements disposed in the puck and arranged in concentric rings to provide independent temperature control zones.

Abstract translation: 本文提供了在处理期间控制基板的温度的方法和装置。 在一些实施例中，用于保持和控制衬底温度的装置可以包括电介质材料的圆盘; 设置在靠近所述圆盘的表面的所述圆盘中的电极，待保持基板的电极; 以及多个加热器元件，其布置在圆盘中并且布置成同心环以提供独立的温度控制区。

公开(公告)号：US20120036560A1

公开(公告)日：2012-02-09

申请号：US13263994

申请日：2009-05-05

Applicant: Xing Lin Wang ,  Lei Li ,  Xue Gang Huang

Inventor： Xing Lin Wang ,  Lei Li ,  Xue Gang Huang

IPC: G06F21/20 ,  G06F15/16

CPC classification number: H04W12/06 ,  H04L63/0823 ,  H04L63/162 ,  H04W4/00 ,  H04W36/0038

Abstract: The present invention relates to methods, apparatuses, and computer program products for providing secure access for a user or terminal to a network, wherein an intermediate authentication node is authorized to listen to and store authentication related information. When an authentication request is received, the stored authentication related information is checked and the user or terminal is authenticated if a match between authentication related information of the authentication request and the stored authentication related information is determined, and an authentication server responsible for the authentication request is notified about the authentication result.

Abstract translation: 本发明涉及用于向网络提供用户或终端的安全接入的方法，装置和计算机程序产品，其中授权中间认证节点收听和存储认证相关信息。 当接收到认证请求时，检查存储的认证相关信息，并且如果确定了认证请求的认证相关信息与存储的认证相关信息之间的匹配，则认证用户或终端，以及负责认证请求的认证服务器 通知认证结果。

公开(公告)号：US07772135B2

公开(公告)日：2010-08-10

申请号：US11601689

申请日：2006-11-20

Applicant: Fang-Tsun Chu ,  Jla-Xing Lin

Inventor： Fang-Tsun Chu ,  Jla-Xing Lin

IPC: H01L21/00

CPC classification number: H01L21/02532 ,  H01L21/0268 ,  Y10T117/1016

Abstract: A method for forming a poly-silicon film, using sequential lateral solidification (SLS) by laser irradiation through an optical device to pattern the laser beam and provide a periodic energy profile on the edges of transparent regions so as to widen the poly-silicon grains and achieve grain size uniformity. The optical device comprises a plurality of first transparent regions with a length of L, wherein at least one side of the edge of each of the first transparent regions has a first periodic shape.

Abstract translation: 一种用于通过激光照射通过光学装置使用顺序横向固化（SLS）来形成多晶硅膜的方法，以对激光束进行图案化并在透明区域的边缘上提供周期性能量分布，以便加宽多晶硅颗粒 并达到晶粒尺寸均匀性。 光学装置包括长度为L的多个第一透明区域，其中每个第一透明区域的边缘的至少一侧具有第一周期性形状。

公开(公告)号：US20090098471A1

公开(公告)日：2009-04-16

申请号：US12338539

申请日：2008-12-18

Applicant: Fang-Tsun Chu ,  Jia-Xing Lin

Inventor： Fang-Tsun Chu ,  Jia-Xing Lin

IPC: G03F1/00

CPC classification number: B23K26/066 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268

Abstract: A mask suitable for SLS laser crystallization includes a transparent substrate with a mask pattern thereon. The mask pattern includes a first region pattern and a second region pattern in mirror symmetry. When a laser beam irradiates on the mask to form a scanning region, the area of the scanning region is smaller than that of the mask pattern. The area of the mask pattern is larger than that of the scanning region of the laser beam. When the laser crystallization process is performed along a first direction, only a partial region on the mask is selected. When the laser crystallization process is performed along a second direction, the other region on the mask is then selected.

Abstract translation: 适用于SLS激光结晶的掩模包括其上具有掩模图案的透明基板。 掩模图案包括第一区域图案和镜像对称的第二区域图案。 当激光束照射在掩模上以形成扫描区域时，扫描区域的面积小于掩模图案的面积。 掩模图案的面积大于激光束的扫描区域的面积。 当沿着第一方向进行激光结晶处理时，仅选择掩模上的部分区域。 当沿着第二方向进行激光结晶处理时，然后选择掩模上的其它区域。

公开(公告)号：US20080123200A1

公开(公告)日：2008-05-29

申请号：US11826963

申请日：2007-07-19

Applicant: Fang-Tsun Chu ,  Jia-Xing Lin

Inventor： Fang-Tsun Chu ,  Jia-Xing Lin

IPC: G02B9/00 ,  H01L21/763

CPC classification number: H01L21/0268 ,  B23K26/066 ,  H01L21/02532

Abstract: A method and a device for forming a poly-silicon film, using sequential lateral solidification (SLS) by laser irradiation through an optical device to pattern the laser beam so as to lengthen the crystalline grains and enhance the throughput. The optical device comprises a plurality of first transparent regions, a plurality of second transparent regions and a plurality of final transparent regions. The plurality of second transparent regions are disposed between the plurality of first transparent regions and the plurality of final transparent regions. The first transparent regions and the second transparent regions have a first width W1 and a first length L1, and the final transparent regions have a second width W2 and a second length L2. An mth first transparent region of the plurality of first transparent regions and an mth second transparent region of the plurality of second transparent regions are arranged in a tier-shape. An mth final transparent region of the plurality of final transparent regions is extended from the mth second transparent region of the plurality of second transparent regions.

Abstract translation: 一种用于形成多晶硅膜的方法和装置，其通过使用光学装置的激光照射使用顺序侧向固化（SLS）来对激光束进行图案化，以延长晶粒并提高生产量。 光学装置包括多个第一透明区域，多个第二透明区域和多个最终透明区域。 多个第二透明区域设置在多个第一透明区域和多个最终透明区域之间。 第一透明区域和第二透明区域具有第一宽度W 1和第一长度L 1，并且最终透明区域具有第二宽度W 2和第二长度L 2。第m + 多个第一透明区域的第一透明区域和多个第二透明区域中的第m个第二透明区域排列成层状。 多个最终透明区域中的第m个最终透明区域从多个第二透明区域的第m个第二透明区域延伸。

公开(公告)号：US20070269993A1

公开(公告)日：2007-11-22

申请号：US11601689

申请日：2006-11-20

Applicant: Fang-Tsun Chu ,  Jla-Xing Lin

Inventor： Fang-Tsun Chu ,  Jla-Xing Lin

IPC: H01L21/00

CPC classification number: H01L21/02532 ,  H01L21/0268 ,  Y10T117/1016

Abstract: A method for forming a poly-silicon film, using sequential lateral solidification (SLS) by laser irradiation through an optical device to pattern the laser beam and provide a periodic energy profile on the edges of transparent regions so as to widen the poly-silicon grains and achieve grain size uniformity. The optical device comprises a plurality of first transparent regions with a length of L, wherein at least one side of the edge of each of the first transparent regions has a first periodic shape.

Abstract translation: 一种用于通过激光照射通过光学装置使用顺序横向固化（SLS）来形成多晶硅膜的方法，以对激光束进行图案化并在透明区域的边缘上提供周期性能量分布，以便加宽多晶硅颗粒 并达到晶粒尺寸均匀性。 光学装置包括长度为L的多个第一透明区域，其中每个第一透明区域的边缘的至少一侧具有第一周期性形状。

公开(公告)号：US20070243670A1

公开(公告)日：2007-10-18

申请号：US11279933

申请日：2006-04-17

Applicant: Chi-Lin Chen ,  Po-Hao Tsai ,  Hung-Tse Chen ,  Yu-Cheng Chen ,  Jia-Xing Lin

Inventor： Chi-Lin Chen ,  Po-Hao Tsai ,  Hung-Tse Chen ,  Yu-Cheng Chen ,  Jia-Xing Lin

IPC: H01L21/84 ,  H01L21/20

CPC classification number: H01L29/78675 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78696

Abstract: A method for fabricating a thin film transistor (“TFT”) device includes providing a substrate, forming a patterned amorphous silicon layer over the substrate including a pair of first regions, a second region disposed between the pair of first regions, and at least one third region, each of which being disposed between and contiguous with the second region and each of the pair of first regions, the second region including a sub-region contiguous with each of the at least one third region, forming a heat retaining layer over the substrate, irradiating the patterned amorphous silicon layer with a laser through the heat retaining layer to form a patterned crystallized silicon layer corresponding to the patterned amorphous silicon layer including a grain boundary extending substantially across a crystallized sub-region corresponding to the sub-region, and forming a patterned conductive layer over a portion of a crystallized second region of the patterned crystallized silicon layer corresponding to the second region of the patterned amorphous silicon layer.

Abstract translation: 一种制造薄膜晶体管（“TFT”）器件的方法包括提供衬底，在衬底上形成图案化的非晶硅层，该衬底包括一对第一区域，设置在该对第一区域之间的第二区域和至少一个 第三区域，每个区域设置在第二区域之间并与第二区域和第一区域中的每一个相邻并且与第一区域中的每一个邻接，第二区域包括与至少一个第三区域中的每一个邻接的子区域， 衬底，通过所述保温层用激光照射所述图案化非晶硅层，以形成对应于所述图案化非晶硅层的图案化结晶硅层，所述图案化非晶硅层包括基本上跨越对应于所述子区域的结晶子区域延伸的晶界，以及 在图案化的结晶硅层对角结晶的第二区域的一部分上形成图案化的导电层 结合到图案化非晶硅层的第二区域。

公开(公告)号：US20070054473A1

公开(公告)日：2007-03-08

申请号：US11226679

申请日：2005-09-14

Applicant: Jia-Xing Lin ,  Chi-Lin Chen

Inventor： Jia-Xing Lin ,  Chi-Lin Chen

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/78645

Abstract: A method for fabricating a semiconductor device includes providing a substrate, forming an amorphous silicon layer over the substrate, forming a heat retaining layer on the amorphous silicon layer, patterning the heat retaining layer, and irradiating the patterned heat retaining layer.

Abstract translation: 一种制造半导体器件的方法包括提供衬底，在衬底上形成非晶硅层，在非晶硅层上形成保温层，图案化保温层，并照射图案化保温层。

公开(公告)号：US06982195B2

公开(公告)日：2006-01-03

申请号：US10780589

申请日：2004-02-19

Applicant: Jia-Xing Lin ,  Chi-Lin Chen ,  Yu-Cheng Chen

Inventor： Jia-Xing Lin ,  Chi-Lin Chen ,  Yu-Cheng Chen

IPC: H01L21/84

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

Abstract: An amorphous silicon layer is formed on a substrate, and then a protective layer and a reflective layer are formed in turn to form a film stack on portions of the amorphous silicon layer. The reflective layer is a metal material with reflectivity of laser, and the protective layer is able to prevent metal diffusion. When an excimer laser heats the amorphous silicon layer to crystallize the amorphous silicon, nucleation sites are formed in the amorphous silicon layer under the film stack of the protective layer and the reflective layer. Next, laterally expanding crystallization occurs in the amorphous silicon layer to form poly-silicon having crystal grains with size of micrometers and high grain order.

Abstract translation: 在基板上形成非晶硅层，然后依次形成保护层和反射层，以在非晶硅层的部分上形成膜堆叠。 反射层是具有激光反射率的金属材料，保护层能够防止金属扩散。 当准分子激光器加热非晶硅层以使非晶硅结晶时，在保护层和反射层的膜堆叠下面的非晶硅层中形成成核位置。 接下来，在非晶硅层中发生横向膨胀结晶，形成晶粒大小为微米，晶粒度高的多晶硅。