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    HIGH TEMPERATURE ELECTROSTATIC CHUCK WITH REAL-TIME HEAT ZONE REGULATING CAPABILITY
    1.
    发明申请
    HIGH TEMPERATURE ELECTROSTATIC CHUCK WITH REAL-TIME HEAT ZONE REGULATING CAPABILITY 有权
    具有实时热区调节能力的高温静电切割机

    公开(公告)号：US20130284374A1

    公开(公告)日：2013-10-31

    申请号：US13793512

    申请日：2013-03-11

    申请人： Dmitry LUBOMIRSKY ,  Jennifer Y. SUN ,  Senh THACH ,  Xing LIN ,  Michael D. WILLWERTH ,  Konstantin MAKHRATCHEV

    发明人： Dmitry LUBOMIRSKY ,  Jennifer Y. SUN ,  Senh THACH ,  Xing LIN ,  Michael D. WILLWERTH ,  Konstantin MAKHRATCHEV

    IPC分类号： H02N13/00

    CPC分类号： H02N13/00 ,  B23B31/28 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/68792

    摘要： Embodiments of the present invention provide electrostatic chucks for operating at elevated temperatures. One embodiment of the present invention provides a dielectric chuck body for an electrostatic chuck. The dielectric chuck body includes a substrate supporting plate having a top surface for receiving a substrate and a back surface opposing the top surface, an electrode embedded in the substrate supporting plate, and a shaft having a first end attached to the back surface of the substrate supporting plate and a second end opposing the first end. The second end is configured to contact a cooling base and provide temperature control to the substrate supporting plate. The shaft is hollow having a sidewall enclosing a central opening, and two or more channels formed through the sidewall and extending from the first end to the second end.

    摘要翻译： 本发明的实施例提供了用于在升高的温度下操作的静电卡盘。 本发明的一个实施例提供了一种用于静电卡盘的电介质卡盘体。 电介质卡盘体包括：基板支撑板，具有用于接收基板的顶表面和与顶表面相对的后表面;嵌入在基板支撑板中的电极;以及轴，其具有连接到基板的背面的第一端 支撑板和与第一端相对的第二端。 第二端构造成接触冷却基座并且向衬底支撑板提供温度控制。 轴是中空的，具有封闭中心开口的侧壁，以及穿过侧壁形成并且从第一端延伸到第二端的两个或更多个通道。

    PLASMA SOURCE DESIGN
    2.
    发明申请
    PLASMA SOURCE DESIGN 有权

    公开(公告)号：US20110114601A1

    公开(公告)日：2011-05-19

    申请号：US12949661

    申请日：2010-11-18

    申请人： Dmitry LUBOMIRSKY ,  Jang-Gyoo YANG ,  Matthew MILLER ,  Jay PINSON ,  Kien CHUC

    发明人： Dmitry LUBOMIRSKY ,  Jang-Gyoo YANG ,  Matthew MILLER ,  Jay PINSON ,  Kien CHUC

    IPC分类号： C23F1/08 ,  C23C16/44 ,  C23C16/505 ,  H05H1/24 ,  C23F1/00

    CPC分类号： H01J37/32357 ,  H01J37/3211

    摘要： Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.

    ESC WITH COOLING BASE
    4.
    发明申请
    ESC WITH COOLING BASE 审中-公开
    带冷却基座的ESC

    公开(公告)号：US20130276980A1

    公开(公告)日：2013-10-24

    申请号：US13860479

    申请日：2013-04-10

    申请人： Dmitry LUBOMIRSKY ,  Kyle TANTIWONG

    发明人： Dmitry LUBOMIRSKY ,  Kyle TANTIWONG

    IPC分类号： H05H1/00

    CPC分类号： H05H1/00 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32724

    摘要： An electrostatic chuck (ESC) with a cooling base for plasma processing chambers, such as a plasma etch chamber. An ESC assembly includes a 2-stage design where a heat transfer fluid inlet (supply) and heat transfer fluid outlet (return) is in a same physical plane. The 2-stage design includes an assembly of a base upon which a ceramic (e.g., AlN) is disposed. The base is disposed over a diffuser which may have hundreds of small holes over the chuck area to provide a uniform distribution of heat transfer fluid. Affixed to the diffuser is a reservoir plate which is to provide a reservoir between the diffuser and the reservoir plate that supplies fluid to the diffuser. Heat transfer fluid returned through the diffuser is passed through the reservoir plate.

    摘要翻译： 具有用于等离子体处理室的冷却基座的静电卡盘（ESC），例如等离子体蚀刻室。 ESC组件包括2级设计，其中传热流体入口（供应）和传热流体出口（返回）处于相同的物理平面中。 2级设计包括一个基座的组件，陶瓷（例如，AlN）被布置在该基座上。 底座设置在扩散器上，扩散器可以在卡盘区域上具有数百个小孔，以提供传热流体的均匀分布。 与扩散器相连的是储存器板，其用于在扩散器和储存器板之间提供储存器，以将流体供应到扩散器。 通过扩散器返回的传热流体通过储存器板。

    PROCESS CHAMBER FOR ETCHING LOW K AND OTHER DIELECTRIC FILMS
    5.
    发明申请
    PROCESS CHAMBER FOR ETCHING LOW K AND OTHER DIELECTRIC FILMS 有权
    用于蚀刻低K和其他电介质膜的工艺室

    公开(公告)号：US20130105303A1

    公开(公告)日：2013-05-02

    申请号：US13651074

    申请日：2012-10-12

    申请人： Dmitry LUBOMIRSKY ,  Srinivas NEMANI ,  Ellie YIEH ,  Sergey G. BELOSTOTSKIY

    发明人： Dmitry LUBOMIRSKY ,  Srinivas NEMANI ,  Ellie YIEH ,  Sergey G. BELOSTOTSKIY

    IPC分类号： C23F1/00

    CPC分类号： H01L21/67069 ,  C23C16/0245 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32477 ,  H01J37/32532 ,  H01J37/32587 ,  H01J37/32715 ,  H01J2237/3341 ,  H01L21/02126 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/6831

    摘要： Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.

    摘要翻译： 描述了用于蚀刻低k和其他电介质膜的方法和处理室。 例如，一种方法包括用等离子体处理来修改低k电介质层的部分。 选择性地在低k电介质层的掩模层和低k电介质层的未修改部分上蚀刻低k电介质层的改性部分。 描述了具有用于交替产生不同等离子体的多个室区的蚀刻室。 在实施例中，提供第一电荷耦合等离子体源以在一个操作模式中产生到工件的离子通量，而提供次级等离子体源以在另一个操作模式中提供反应物质通量，而不会对工件产生显着的离子通量。 控制器操作以随着时间重复地循环操作模式以去除期望的累积量的电介质材料。

    PULSED PLASMA WITH LOW WAFER TEMPERATURE FOR ULTRA THIN LAYER ETCHES
    6.
    发明申请
    PULSED PLASMA WITH LOW WAFER TEMPERATURE FOR ULTRA THIN LAYER ETCHES 有权
    用于超薄薄层蚀刻的低温度的脉冲等离子体

    公开(公告)号：US20130109190A1

    公开(公告)日：2013-05-02

    申请号：US13654285

    申请日：2012-10-17

    申请人： Thorsten LILL ,  Klaus SCHUEGRAF ,  Dmitry LUBOMIRSKY

    发明人： Thorsten LILL ,  Klaus SCHUEGRAF ,  Dmitry LUBOMIRSKY

    IPC分类号： H01L21/3065 ,  C23F1/08

    CPC分类号： H01L21/3065 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/194 ,  H01J37/32146 ,  H01J37/32449

    摘要： Ultrathin material layers are plasma etched with an etch system configured for cryogenic cooling of a substrate to reduce the diffusion coefficients of foreign and intrinsic stop layer atoms (e.g., of the bombarded crystal lattice), and further configured for plasma pulsing to reduce the energy of the impinging ions with cryogenic wafer temperatures. Substrate temperatures of −50° C. or more are employed to reduce the susceptibility of a stop layer material to damage associated with ion impact. Ion energy is reduced to below the threshold where stop layer lattice atoms are displaced or ions are implanted into the bulk lattice. In embodiments, a plasma of an etchant gas having ion energies less than 10 eV are achieved through plasma pulsing, which when directed at the low temperature substrate may controllably etch ultra-thin material layers.

    摘要翻译： 超薄材料层被等离子体蚀刻，其中蚀刻系统被配置用于低温冷却衬底，以减少外来和固有停止层原子（例如，被轰击的晶格）的扩散系数，并进一步配置用于等离子体脉冲以降低 用低温晶片温度冲击离子。 使用-50℃以上的基板温度来降低停止层材料对与离子冲击有关的损伤的敏感性。 离子能量降低到阈值以下，其中阻挡层晶格原子被置换或离子注入到体晶格中。 在实施例中，具有小于10eV的离子能量的蚀刻剂气体的等离子体通过等离子脉冲实现，其在指向低温衬底时可以可控制地蚀刻超薄材料层。