公开(公告)号：US20090104881A1

公开(公告)日：2009-04-23

申请号：US12314644

申请日：2008-12-15

申请人： Takashi Ogawa ,  Shinichiro Takatani ,  Shigeki Koya ,  Hiroyuki Takazawa ,  Shinya Osakabe ,  Akishige Nakajima ,  Yasushi Shigeno

发明人： Takashi Ogawa ,  Shinichiro Takatani ,  Shigeki Koya ,  Hiroyuki Takazawa ,  Shinya Osakabe ,  Akishige Nakajima ,  Yasushi Shigeno

IPC分类号： H04B1/44 ,  H01L29/778

CPC分类号： H01L27/0605 ,  H01L27/0629 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7783 ,  H01L2924/0002 ,  H01L2924/00

摘要： A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes 39, 40 formed on a semiconductor substrate, at least two gate electrodes 41, 42 disposed between the two ohmic electrodes, and a conductive region 45 disposed between the adjacent gate electrodes among the at least two gate electrodes, a field effective transistor being structured by the two ohmic electrodes, the at least two gate electrodes, and the conductive region. The conductive region has a wider portion that is wider in width than the conductive region interposed between the adjacent gate electrodes on one end thereof. The distance between the adjacent gate electrodes is narrower than the width of the wider portion. Resistors 44, 46 are connected in series between the two ohmic electrodes through the wider portion.

摘要翻译： 提供了一种开关元件，其实现了在不增加插入损耗的情况下使多栅极的栅极之间的电位稳定，并且每个使用开关元件的天线开关电路和射频模块。 开关元件包括形成在半导体衬底上的两个欧姆电极39,40，设置在两个欧姆电极之间的至少两个栅极电极41,42以及设置在至少两个栅电极之间的相邻栅电极之间的导电区域45， 场效应晶体管由两个欧姆电极，至少两个栅极电极和导电区域构成。 导电区域的宽度部分的宽度比插入在其一端的相邻栅电极之间的导电区域宽。 相邻栅电极之间的距离比较宽部分的宽度窄。 电阻器44,46通过较宽部分串联连接在两个欧姆电极之间。

公开(公告)号：US07437129B2

公开(公告)日：2008-10-14

申请号：US11892044

申请日：2007-08-20

申请人： Akishige Nakajima ,  Takashi Ogawa ,  Hidenori Suenaga ,  Eigo Tange ,  Shinya Osakabe ,  Yasushi Shigeno

发明人： Akishige Nakajima ,  Takashi Ogawa ,  Hidenori Suenaga ,  Eigo Tange ,  Shinya Osakabe ,  Yasushi Shigeno

IPC分类号： H04B1/44

CPC分类号： H03F3/195 ,  H03F1/0277 ,  H03F1/32 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/372 ,  H03F2200/429

摘要： There are provided a transmission/reception switching circuit which is small in insertion loss and harmonic distortion and allows an increase in the output power of a power amplifier and an electronic component for communication on which the transmission/reception switching circuit is mounted. As an element composing a transmission/reception switching circuit in a wireless communication system, series-connected FETs or a multi-gate FET are used in place of a diode. Gate resistors connected between the individual gate terminals and a control terminal are designed to have resistance values which become progressively smaller from the gate to which a highest voltage is applied toward the gate to which a lowest voltage is applied.

摘要翻译： 提供了一种插入损耗和谐波失真小的发送/接收切换电路，并且允许功率放大器和安装发送/接收切换电路的通信用电子部件的输出功率的增加。 作为构成无线通信系统中的发送/接收切换电路的元件，使用串联连接的FET或多栅极FET来代替二极管。 连接在各个栅极端子和控制端子之间的栅极电阻被设计成具有从施加最低电压的栅极施加最高电压的栅极逐渐变小的电阻值。

公开(公告)号：US20080042776A1

公开(公告)日：2008-02-21

申请号：US11892044

申请日：2007-08-20

申请人： Akishige Nakajima ,  Takashi Ogawa ,  Hidenori Suenaga ,  Eigo Tange ,  Shinya Osakabe ,  Yasushi Shigeno

发明人： Akishige Nakajima ,  Takashi Ogawa ,  Hidenori Suenaga ,  Eigo Tange ,  Shinya Osakabe ,  Yasushi Shigeno

IPC分类号： H01P1/10 ,  H04B1/44

CPC分类号： H03F3/195 ,  H03F1/0277 ,  H03F1/32 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/372 ,  H03F2200/429

摘要： There are provided a transmission/reception switching circuit which is small in insertion loss and harmonic distortion and allows an increase in the output power of a power amplifier and an electronic component for communication on which the transmission/reception switching circuit is mounted. As an element composing a transmission/reception switching circuit in a wireless communication system, series-connected FETs or a multi-gate FET are used in place of a diode. Gate resistors connected between the individual gate terminals and a control terminal are designed to have resistance values which become progressively smaller from the gate to which a highest voltage is applied toward the gate to which a lowest voltage is applied.

公开(公告)号：US20120229192A1

公开(公告)日：2012-09-13

申请号：US13419194

申请日：2012-03-13

申请人： Kaoru KATOH ,  Shigeki KOYA ,  Shinichiro TAKATANI ,  Yasushi SHIGENO ,  Akishige NAKAJIMA ,  Takashi OGAWA

发明人： Kaoru KATOH ,  Shigeki KOYA ,  Shinichiro TAKATANI ,  Yasushi SHIGENO ,  Akishige NAKAJIMA ,  Takashi OGAWA

IPC分类号： H03K17/687

CPC分类号： H03K17/693 ,  H03K17/063

摘要： A semiconductor integrated circuit which reduces an increase in the level of a harmonic signal of an RF transmission output signal at the time of supplying an RF transmission signal to a bias generation circuit of an antenna switch, including an antenna switch having a bias generation circuit, a transmitter switch, and a receiver switch. The on/off state of a transistor of the transmitter switch coupled between a transmitter port and an I/O port is controlled by a transmit control bias. The on/off state of the transistors of the receiver switch coupled between the I/O port and a receiver port is controlled by a receiver control bias. An RF signal input port of the bias generation circuit is coupled to the transmit port, and a negative DC output bias generated from a DC output port is supplied to a gate control port of transistors of the receiver switch.

摘要翻译： 一种半导体集成电路，其在将RF发送信号提供给天线开关的偏置产生电路时降低RF发送输出信号的谐波信号的电平的增加，包括具有偏置产生电路的天线开关， 发射机开关和接收器开关。 耦合在发送器端口和I / O端口之间的发送器开关的晶体管的开/关状态由发送控制偏置来控制。 耦合在I / O端口和接收器端口之间的接收器开关的晶体管的开/关状态由接收器控制偏置来控制。 偏置产生电路的RF信号输入端口耦合到发送端口，并且从DC输出端口产生的负DC输出偏置被提供给接收器开关的晶体管的栅极控制端口。

公开(公告)号：US20110221519A1

公开(公告)日：2011-09-15

申请号：US13043626

申请日：2011-03-09

申请人： Kaoru KATOH ,  Shigeki KOYA ,  Yasushi SHIGENO ,  Akishige NAKAJIMA ,  Takashi OGAWA

发明人： Kaoru KATOH ,  Shigeki KOYA ,  Yasushi SHIGENO ,  Akishige NAKAJIMA ,  Takashi OGAWA

IPC分类号： H03B1/04

CPC分类号： H04B1/48 ,  H04B1/0057 ,  H04B1/0458

摘要： The present invention reduces harmonic components of an RF transmission output signal. In the semiconductor integrated circuit which the present invention provides, a transmission switch of an antenna switch thereof includes transmission field effect transistors whose S-D current paths are coupled between a transmission terminal and an input/output terminal and whose gate terminals are coupled to a transmission control terminal. A reception switch of the antenna switch includes reception field effect transistors whose S-D current paths are coupled between the input/output terminal and a reception terminal and whose gate terminals are coupled to a reception control terminal. The transmission and reception n-channel MOS field effect transistors are respectively formed in a silicon-on-insulator structure. A substrate voltage of a voltage generator, set to reducing each harmonic component of the antenna switch, is supplied to the transmission control terminal and the reception coupled to a support silicon substrate having the SOI structure.

摘要翻译： 本发明减少了RF传输输出信号的谐波分量。 在本发明提供的半导体集成电路中，天线开关的发送开关包括：发送场效应晶体管，其SD电流路径耦合在发送端和输入/输出端之间，其栅极端耦合到发送控制 终奌站。 天线开关的接收开关包括其S-D电流路径耦合在输入/输出端子和接收端子之间并且其栅极端子耦合到接收控制端子的接收场效应晶体管。 发送和接收n沟道MOS场效应晶体管分别形成在绝缘体上硅结构中。 设置为减小天线开关的每个谐波分量的电压发生器的基板电压被提供给发送控制端子，并且耦合到具有SOI结构的支撑硅基板的接收。

公开(公告)号：US20110156983A1

公开(公告)日：2011-06-30

申请号：US12929940

申请日：2011-02-25

申请人： Takashi Ogawa ,  Shinichiro Takatani ,  Shigeki Koya ,  Hiroyuki Takazawa ,  Shinya Osakabe ,  Akishige Nakajima ,  Yasushi Shigeno

发明人： Takashi Ogawa ,  Shinichiro Takatani ,  Shigeki Koya ,  Hiroyuki Takazawa ,  Shinya Osakabe ,  Akishige Nakajima ,  Yasushi Shigeno

IPC分类号： H01Q1/50 ,  H01L29/12

CPC分类号： H01L27/0605 ,  H01L27/0629 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7783 ,  H01L2924/0002 ,  H01L2924/00

摘要： A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes 39, 40 formed on a semiconductor substrate, at least two gate electrodes 41, 42 disposed between the two ohmic electrodes, and a conductive region 45 disposed between the adjacent gate electrodes among the at least two gate electrodes, a field effective transistor being structured by the two ohmic electrodes, the at least two gate electrodes, and the conductive region. The conductive region has a wider portion that is wider in width than the conductive region interposed between the adjacent gate electrodes on one end thereof. The distance between the adjacent gate electrodes is narrower than the width of the wider portion. Resistors 44, 46 are connected in series between the two ohmic electrodes through the wider portion.

公开(公告)号：US07899412B2

公开(公告)日：2011-03-01

申请号：US12805409

申请日：2010-07-29

申请人： Takashi Ogawa ,  Shinichiro Takatani ,  Shigeki Koya ,  Hiroyuki Takazawa ,  Shinya Osakabe ,  Akishige Nakajima ,  Yasushi Shigeno

发明人： Takashi Ogawa ,  Shinichiro Takatani ,  Shigeki Koya ,  Hiroyuki Takazawa ,  Shinya Osakabe ,  Akishige Nakajima ,  Yasushi Shigeno

IPC分类号： H04B1/44

CPC分类号： H01L27/0605 ,  H01L27/0629 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7783 ,  H01L2924/0002 ,  H01L2924/00

摘要： A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes 39, 40 formed on a semiconductor substrate, at least two gate electrodes 41, 42 disposed between the two ohmic electrodes, and a conductive region 45 disposed between the adjacent gate electrodes among the at least two gate electrodes, a field effective transistor being structured by the two ohmic electrodes, the at least two gate electrodes, and the conductive region. The conductive region has a wider portion that is wider in width than the conductive region interposed between the adjacent gate electrodes on one end thereof. The distance between the adjacent gate electrodes is narrower than the width of the wider portion. Resistors 44, 46 are connected in series between the two ohmic electrodes through the wider portion.

摘要翻译： 提供了一种开关元件，其实现了在不增加插入损耗的情况下使多栅极的栅极之间的电位稳定，并且每个使用开关元件的天线开关电路和射频模块。 开关元件包括形成在半导体衬底上的两个欧姆电极39,40，设置在两个欧姆电极之间的至少两个栅极电极41,42以及设置在至少两个栅电极之间的相邻栅电极之间的导电区域45， 场效应晶体管由两个欧姆电极，至少两个栅极电极和导电区域构成。 导电区域的宽度部分的宽度比插入在其一端的相邻栅电极之间的导电区域宽。 相邻栅电极之间的距离比较宽部分的宽度窄。 电阻器44,46通过较宽部分串联连接在两个欧姆电极之间。

公开(公告)号：US20100297960A1

公开(公告)日：2010-11-25

申请号：US12805409

申请日：2010-07-29

申请人： Takashi Ogawa ,  Shinichiro Takatani ,  Shigeki Koya ,  Hiroyuki Takazawa ,  Shinya Osakabe ,  Akishige Nakajima ,  Yasushi Shigeno

发明人： Takashi Ogawa ,  Shinichiro Takatani ,  Shigeki Koya ,  Hiroyuki Takazawa ,  Shinya Osakabe ,  Akishige Nakajima ,  Yasushi Shigeno

IPC分类号： H04B1/44 ,  H01L29/778

CPC分类号： H01L27/0605 ,  H01L27/0629 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7783 ,  H01L2924/0002 ,  H01L2924/00

摘要： A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes 39, 40 formed on a semiconductor substrate, at least two gate electrodes 41, 42 disposed between the two ohmic electrodes, and a conductive region 45 disposed between the adjacent gate electrodes among the at least two gate electrodes, a field effective transistor being structured by the two ohmic electrodes, the at least two gate electrodes, and the conductive region. The conductive region has a wider portion that is wider in width than the conductive region interposed between the adjacent gate electrodes on one end thereof. The distance between the adjacent gate electrodes is narrower than the width of the wider portion. Resistors 44, 46 are connected in series between the two ohmic electrodes through the wider portion.

公开(公告)号：US20080317154A1

公开(公告)日：2008-12-25

申请号：US11765236

申请日：2007-06-19

申请人： Akishige Nakajima ,  Yasushi Shigeno ,  Takashi Ogawa ,  Shinnichirou Takatani ,  Shinya Osakabe ,  Tomoyuki Ishikawa

发明人： Akishige Nakajima ,  Yasushi Shigeno ,  Takashi Ogawa ,  Shinnichirou Takatani ,  Shinya Osakabe ,  Tomoyuki Ishikawa

IPC分类号： H04B1/38

CPC分类号： H04B1/006 ,  H01L27/0641 ,  H03K17/005 ,  H03K17/007 ,  H03K17/063 ,  H03K17/161 ,  H03K17/302 ,  H03K17/6871 ,  H03K17/693 ,  H03K17/72 ,  H03K2017/066 ,  H03K2217/0018

摘要： The present invention provides a semiconductor integrated circuit device and a radio frequency module realizing reduction in high-order harmonic distortion or IMD. For example, a so-called antenna switch having a plurality of transistors between an antenna terminal and a plurality of signal terminals is provided with a voltage supply circuit. The voltage supply circuit is a circuit for supplying voltage from a voltage supply terminal to at least two signal terminals in the plurality of signal terminals via resistive elements. With the configuration, antenna voltage dropped due to a leakage or the like can be boosted and, for example, transistors in an off state can be set to a deep off state.

摘要翻译： 本发明提供一种半导体集成电路器件和实现高阶谐波失真或IMD降低的射频模块。 例如，在天线端子和多个信号端子之间具有多个晶体管的所谓的天线开关设置有电压供给电路。 电压供给电路是用于经由电阻元件将电压从电压端子提供给多个信号端子中的至少两个信号端子的电路。 通过该结构，可以提高由于漏电等而导致的天线电压下降，例如，可以将关断状态的晶体管设定为深断状态。

公开(公告)号：US20080197923A1

公开(公告)日：2008-08-21

申请号：US11960242

申请日：2007-12-19

申请人： Akishige NAKAJIMA ,  Yasushi Shigeno ,  Tomoyuki Ishikawa

发明人： Akishige NAKAJIMA ,  Yasushi Shigeno ,  Tomoyuki Ishikawa

IPC分类号： H03F1/32

CPC分类号： H03F3/189 ,  H03F1/56 ,  H03F3/68

摘要： Upon application of an on-state voltage to a control terminal, an antenna switch provided between an antenna terminal and a transmission terminal is turned on, and a transmission signal of a PCS/DCS system passes from the transmission terminal through the antenna terminal. At this time, a booster circuit, to which a part of the transmission signal is supplied, generates at an output terminal a boost voltage higher than a control voltage output from a controller due to the rectification of diodes, and applies the same to the gate of a transistor circuit of the antenna switch. Since in the booster circuit a resistor is coupled to the output terminal, the passage through resistors of an input transmission power in an RF signal path is only the passage through one resistor, thus reducing the attenuation of the transmission signal and providing an excellent insertion loss characteristic.

摘要翻译： 在向控制终端施加通状态电压时，设置在天线端子和发送端子之间的天线开关导通，并且PCS / DCS系统的发送信号通过天线端子从发送端子通过。 此时，提供传输信号的一部分的升压电路在输出端产生比由二极管整流由控制器输出的控制电压高的升压电压，并将其施加到栅极 的天线开关的晶体管电路。 由于在升压电路中，电阻器耦合到输出端子，所以通过RF信号路径中的输入传输功率的电阻器的通过仅是通过一个电阻器，从而减少了传输信号的衰减并提供了优异的插入损耗 特性。