公开(公告)号：US08146437B2

公开(公告)日：2012-04-03

申请号：US12630179

申请日：2009-12-03

Applicant: Yuichi Miyoshi ,  Yusuke Takeuchi ,  Tohru Yamaoka ,  Hiroshi Ogura

Inventor： Yuichi Miyoshi ,  Yusuke Takeuchi ,  Tohru Yamaoka ,  Hiroshi Ogura

IPC: G01L9/06

CPC classification number: G01L9/0016 ,  H04R19/005

Abstract: A diaphragm structure for a MEMS device includes a through-hole formed so as to penetrate from an upper surface to a bottom surface of a substrate; and a vibrating electrode film formed on the upper surface of the substrate so as to cover the through-hole. An opening shape of the through-hole in the upper surface of the substrate is substantially hexagonal.

Abstract translation: 用于MEMS器件的隔膜结构包括形成为从衬底的上表面到底表面穿透的通孔; 以及形成在基板的上表面上以覆盖通孔的振动电极膜。 基板的上表面中的通孔的开口形状基本上是六边形。

公开(公告)号：US08067811B2

公开(公告)日：2011-11-29

申请号：US12938007

申请日：2010-11-02

Applicant: Tohru Yamaoka ,  Yuichi Miyoshi

Inventor： Tohru Yamaoka ,  Yuichi Miyoshi

IPC: H01L21/00 ,  H04R25/00

CPC classification number: H04R19/005 ,  B81B3/0086 ,  B81B2201/0257 ,  H04R19/016 ,  H04R19/04 ,  H04R2410/03

Abstract: A MEMS device includes a first insulating film formed on a semiconductor substrate, a vibrating film formed on the first insulating film, and a fixed film above the vibrating film with an air gap being interposed therebetween. The semiconductor substrate has a region containing N-type majority carriers. A concentration of N-type majority carriers in a portion of the semiconductor substrate where the semiconductor substrate contacts the first insulating film, is higher than a concentration of N-type majority carriers in the other portion of the semiconductor substrate.

Abstract translation: MEMS器件包括形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的振动膜和位于振动膜上方的固定膜，其间夹有气隙。 半导体衬底具有包含N型多数载流子的区域。 在半导体衬底与第一绝缘膜接触的半导体衬底的一部分中的N型多数载流子的浓度高于半导体衬底的另一部分中的N型多数载流子的浓度。

公开(公告)号：US20100059836A1

公开(公告)日：2010-03-11

申请号：US12436374

申请日：2009-05-06

Applicant: Yuichi Miyoshi ,  Tohru Yamaoka ,  Hidenori Notake ,  Yusuke Takeuchi

Inventor： Yuichi Miyoshi ,  Tohru Yamaoka ,  Hidenori Notake ,  Yusuke Takeuchi

IPC: H01L29/84 ,  H01L21/30

CPC classification number: B81C1/00158 ,  B81B2201/0257 ,  B81C2201/0133 ,  G01P15/0802 ,  G01P15/097 ,  G01P15/123

Abstract: A MEMS device, including: a substrate having a first principal plane and a second principal plane opposite to the first principal plane; a through hole formed in the substrate; and a vibrating film formed over the first principal plane so as to cover the through hole. The first principal plane and the second principal plane are both a (110) crystal face; and the through hole has a substantially rhombic shape on the second principal plane.

Abstract translation: 一种MEMS器件，包括：具有第一主平面和与第一主平面相对的第二主平面的衬底; 形成在基板中的通孔; 以及形成在所述第一主平面上以覆盖所述通孔的振动膜。 第一主平面和第二主平面都是（110）晶面; 并且通孔在第二主平面上具有基本上菱形的形状。

公开(公告)号：US07620192B2

公开(公告)日：2009-11-17

申请号：US10576518

申请日：2004-11-12

Applicant: Tohru Yamaoka ,  Hiroshi Ogura ,  Yuichi Miyoshi ,  Tomoyuki Sasaki

Inventor： Tohru Yamaoka ,  Hiroshi Ogura ,  Yuichi Miyoshi ,  Tomoyuki Sasaki

IPC: H04R25/00

CPC classification number: H01G5/0136 ,  H01G5/16 ,  H01G7/025 ,  H04R19/016 ,  H04R2499/11

Abstract: A silicon nitride film (103) and a silicon nitride film (106) are formed to cover a charged silicon oxide film (105) serving as an electret.

Abstract translation: 形成氮化硅膜（103）和氮化硅膜（106），以覆盖用作驻极体的带电氧化硅膜（105）。