公开(公告)号：US20100002895A1

公开(公告)日：2010-01-07

申请号：US12539892

申请日：2009-08-12

申请人： Hidenori NOTAKE ,  Tohru YAMAOKA

发明人： Hidenori NOTAKE ,  Tohru YAMAOKA

IPC分类号： H04R11/04 ,  H01L29/84

CPC分类号： H01G7/02 ,  B81B3/0051 ,  B81B2201/0257 ,  H04R19/016

摘要： An air gap is formed between a first film having a first electrode film and a second film having a second electrode film. The first film has a stopper protruding toward the second film, and a recess communicating with the air gap is provided in the center of the stopper.

摘要翻译： 在具有第一电极膜的第一膜和具有第二电极膜的第二膜之间形成气隙。 第一膜具有朝向第二膜突出的止动件，并且在止动件的中心设置有与气隙连通的凹部。

公开(公告)号：US07109095B2

公开(公告)日：2006-09-19

申请号：US10396505

申请日：2003-03-26

申请人： Hidenori Notake ,  Teruhito Ohnishi ,  Akira Asai ,  Shigetaka Aoki

发明人： Hidenori Notake ,  Teruhito Ohnishi ,  Akira Asai ,  Shigetaka Aoki

IPC分类号： H01L21/20

CPC分类号： H01L21/0209 ,  H01L21/02052 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/32134 ,  H01L29/66242

摘要： Immediately after a Si/SiGe film containing a contaminant is formed over all surfaces of a substrate by epitaxial growth, a portion of the Si/SiGe film formed to the back surface side of the substrate is removed by wet etching. In addition, the Si/SiGe film is subjected to processing with heating in a container, after which a dummy run is carried out in the container. These processings prevent secondary wafer contamination through a stage, a robot arm or a vacuum wand for handling a wafer and the contamination of the container also used in the fabrication process of a semiconductor device free from any group IV element but Si.

公开(公告)号：US20100059836A1

公开(公告)日：2010-03-11

申请号：US12436374

申请日：2009-05-06

申请人： Yuichi Miyoshi ,  Tohru Yamaoka ,  Hidenori Notake ,  Yusuke Takeuchi

发明人： Yuichi Miyoshi ,  Tohru Yamaoka ,  Hidenori Notake ,  Yusuke Takeuchi

IPC分类号： H01L29/84 ,  H01L21/30

CPC分类号： B81C1/00158 ,  B81B2201/0257 ,  B81C2201/0133 ,  G01P15/0802 ,  G01P15/097 ,  G01P15/123

摘要： A MEMS device, including: a substrate having a first principal plane and a second principal plane opposite to the first principal plane; a through hole formed in the substrate; and a vibrating film formed over the first principal plane so as to cover the through hole. The first principal plane and the second principal plane are both a (110) crystal face; and the through hole has a substantially rhombic shape on the second principal plane.

摘要翻译： 一种MEMS器件，包括：具有第一主平面和与第一主平面相对的第二主平面的衬底; 形成在基板中的通孔; 以及形成在所述第一主平面上以覆盖所述通孔的振动膜。 第一主平面和第二主平面都是（110）晶面; 并且通孔在第二主平面上具有基本上菱形的形状。

公开(公告)号：US08166827B2

公开(公告)日：2012-05-01

申请号：US12436374

申请日：2009-05-06

申请人： Yuichi Miyoshi ,  Tohru Yamaoka ,  Hidenori Notake ,  Yusuke Takeuchi

发明人： Yuichi Miyoshi ,  Tohru Yamaoka ,  Hidenori Notake ,  Yusuke Takeuchi

IPC分类号： G01L9/06

CPC分类号： B81C1/00158 ,  B81B2201/0257 ,  B81C2201/0133 ,  G01P15/0802 ,  G01P15/097 ,  G01P15/123

摘要： A MEMS device, including: a substrate having a first principal plane and a second principal plane opposite to the first principal plane; a through hole formed in the substrate; and a vibrating film formed over the first principal plane so as to cover the through hole. The first principal plane and the second principal plane are both a (110) crystal face; and the through hole has a substantially rhombic shape on the second principal plane.

摘要翻译： 一种MEMS器件，包括：具有第一主平面和与第一主平面相对的第二主平面的衬底; 形成在基板中的通孔; 以及形成在所述第一主平面上以覆盖所述通孔的振动膜。 第一主平面和第二主平面都是（110）晶面; 并且通孔在第二主平面上具有基本上菱形的形状。