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公开(公告)号：US11143970B2
公开(公告)日：2021-10-12
申请号：US16943296
申请日：2020-07-30
Applicant: ASML Netherlands B.V.
Inventor： Scott Anderson Middlebrooks , Markus Gerardus Martinus Maria Van Kraaij , Adrianus Cornelis Matheus Koopman , Stefan Hunsche , Willem Marie Julia Marcel Coene
Abstract: A method and apparatus of detection, registration and quantification of an image is described. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.
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公开(公告)号：US10962886B2
公开(公告)日：2021-03-30
申请号：US16067303
申请日：2016-12-15
Applicant: ASML NETHERLANDS B.V.
Inventor： Hans Van Der Laan , Wim Tjibbo Tel , Marinus Jochemsen , Stefan Hunsche
IPC: G03F7/20 , G06F30/398 , H01L21/66
Abstract: Provided is a process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.
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公开(公告)号：US10908515B2
公开(公告)日：2021-02-02
申请号：US16468063
申请日：2017-11-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Tanbir Hasan , Vivek Kumar Jain , Stefan Hunsche , Bruno La Fontaine
Abstract: A method of topography determination, the method including: obtaining a first focus value derived from a computational lithography model modeling patterning of an unpatterned substrate or derived from measurements of a patterned layer on an unpatterned substrate; obtaining a second focus value derived from measurement of a substrate having a topography; and determining a value of the topography from the first and second focus values.
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公开(公告)号：US10459345B2
公开(公告)日：2019-10-29
申请号：US15553106
申请日：2016-02-23
Applicant: ASML Netherlands B.V.
Inventor： Stefan Hunsche , Chiou-Hung Jang , Marinus Jochemsen , Vito Tomasello
Abstract: A method to improve a lithographic process of processing a portion of a design layout onto a substrate using a lithographic apparatus, the method including: adjusting a first processing parameter among processing parameters of the lithographic process to cause the processing to be more tolerant to perturbations of at least one of the processing parameters during processing; and adjusting a second processing parameter among processing parameters of the lithographic process to cause the processing to be more tolerant to perturbations of at least one of the processing parameters during processing.
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公开(公告)号：US09990451B2
公开(公告)日：2018-06-05
申请号：US14616905
申请日：2015-02-09
Applicant: ASML NETHERLANDS B.V.
Inventor： Stefan Hunsche , Venu Vellanki
CPC classification number: G06F17/5009 , G03F7/705 , G03F7/70525 , H01L22/20
Abstract: Disclosed herein is a computer-implemented defect prediction method for a device manufacturing process involving processing a pattern onto a substrate, the method comprising: identifying a processing window limiting pattern (PWLP) from the pattern; determining a processing parameter under which the PWLP is processed; and determining or predicting, using the processing parameter, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the PWLP with the device manufacturing process.
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Patent Agency Ranking
公开(公告)号：US12228862B2
公开(公告)日：2025-02-18
申请号：US18207732
申请日：2023-06-09
Applicant: ASML NETHERLANDS B.V.
Inventor： Hans Van Der Laan , Wim Tjibbo Tel , Marinus Jochemsen , Stefan Hunsche
IPC: G03F7/00 , G06F30/398 , H01L21/66
Abstract: A process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.
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公开(公告)号：US12189307B2
公开(公告)日：2025-01-07
申请号：US17268863
申请日：2019-08-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Fuming Wang , Stefan Hunsche , Wei Fang
IPC: G03F7/00 , G06F18/214 , G06T7/00 , G06T7/73 , H01J37/28
Abstract: A method for correcting metrology data of a patterning process. The method includes obtaining (i) metrology data of a substrate subjected to the patterning process and (ii) a quality metric (e.g., a focus index) that quantifies a quality of the metrology data of the substrate; establishing a correlation between the quality metric and the metrology data; and determining a correction to the metrology data based on the correlation between the quality metric and the metrology data.
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公开(公告)号：US20220277116A1
公开(公告)日：2022-09-01
申请号：US17744091
申请日：2022-05-13
Applicant: ASML NETHERLANDS B.V.
Inventor： Jing SU , Yi Zou , Chenxi Lin , Stefan Hunsche , Marinus Jochemsen , Yen-Wen Lu , Lin Lee Cheong
Abstract: Methods of identifying a hot spot from a design layout or of predicting whether a pattern in a design layout is defective, using a machine learning model. An example method disclosed herein includes obtaining sets of one or more characteristics of performance of hot spots, respectively, under a plurality of process conditions, respectively, in a device manufacturing process; determining, for each of the process conditions, for each of the hot spots, based on the one or more characteristics under that process condition, whether that hot spot is defective; obtaining a characteristic of each of the process conditions; obtaining a characteristic of each of the hot spots; and training a machine learning model using a training set including the characteristic of one of the process conditions, the characteristic of one of the hot spots, and whether that hot spot is defective under that process condition.
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公开(公告)号：US11238189B2
公开(公告)日：2022-02-01
申请号：US15996899
申请日：2018-06-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Stefan Hunsche , Venugopal Vellanki
Abstract: A defect prediction method for a device manufacturing process involving processing a pattern onto a substrate, the method comprising: identifying a processing window limiting pattern (PWLP) from the pattern; determining a processing parameter under which the PWLP is processed; and determining or predicting, using the processing parameter, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the PWLP with the device manufacturing process.
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公开(公告)号：US20220026811A1
公开(公告)日：2022-01-27
申请号：US17497207
申请日：2021-10-08
Applicant: ASML Netherlands B.V.
Inventor： Scott Anderson MIDDLEBROOKS , Markus Gerardus Martinus Maria Van Kraaij , Adrianus Cornelis Matheus Koopman , Stefan Hunsche , Willem Marie Julia Marcel Coene
Abstract: A method and apparatus of detection, registration and quantification of an image is described. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.
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