公开(公告)号：US10578982B2

公开(公告)日：2020-03-03

申请号：US16323849

申请日：2017-07-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Hans Van Der Laan ,  Mir Homayoun Shahrjerdy

IPC: G03B27/52 ,  G03F7/20

Abstract: A method including computing, in accordance with one or more parameters of a substrate measurement recipe, measurement with a latent image of a target and measurement with a post-development image corresponding to the latent image, to evaluate a characteristic determined from the computed measurement with the latent image of the target and determined from the computed measurement with the post-development image corresponding to the latent image; and adjusting the one or more parameters of the substrate measurement recipe and re-performing the computing, until a certain termination condition is satisfied with respect to the characteristic.

公开(公告)号：US10962886B2

公开(公告)日：2021-03-30

申请号：US16067303

申请日：2016-12-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Hans Van Der Laan ,  Wim Tjibbo Tel ,  Marinus Jochemsen ,  Stefan Hunsche

IPC: G03F7/20 ,  G06F30/398 ,  H01L21/66

Abstract: Provided is a process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.

公开(公告)号：US11681229B2

公开(公告)日：2023-06-20

申请号：US17214456

申请日：2021-03-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Hans Van Der Laan ,  Wim Tjibbo Tel ,  Marinus Jochemsen ,  Stefan Hunsche

IPC: G03F7/20 ,  G06F30/398 ,  H01L21/66 ,  G03F7/00

CPC classification number: G03F7/705 ,  G03F7/7065 ,  G03F7/70608 ,  G03F7/70616 ,  G03F7/70625 ,  G06F30/398 ,  H01L22/20 ,  H01L22/12

Abstract: A process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.

公开(公告)号：US10551750B2

公开(公告)日：2020-02-04

申请号：US16393055

申请日：2019-04-24

Applicant: ASML Netherlands B.V.

Inventor： Adam Jan Urbanczyk ,  Hans Van Der Laan ,  Grzegorz Grzela ,  Alberto Da Costa Assafrao ,  Chien-Hung Tseng ,  Jay Jianhui Chen

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956

Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus. The method comprises: obtaining measured target response sequence data relating to a measurement response of a target formed on a substrate by a lithographic process to measurement radiation comprising multiple measurement profiles, wherein the measured target response sequence data describes a variation of the measurement response of the target in response to variations of the measurement profiles; obtaining reference target response sequence data relating to a measurement response of the target as designed to the measurement radiation, wherein the reference target response sequence data describes an optimal measurement response of the target in response to designed measurement profiles without un-designed variation; comparing the measured target response sequence data and the reference target response sequence data; and determining values for variations in stack parameters of the target from the measured target response sequence data based on the comparison.

公开(公告)号：US10310388B2

公开(公告)日：2019-06-04

申请号：US15874972

申请日：2018-01-19

Applicant: ASML Netherlands B.V.

Inventor： Adam Urbanczyk ,  Hans Van Der Laan ,  Grzegorz Grzela ,  Alberto Da Costa Assafrao ,  Chien-Hung Tseng ,  Jay Jianhui Chen

IPC: G03F7/20 ,  G01N21/47 ,  G06F7/20 ,  G01N21/956

Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus. The method comprises: comparing measured target response spectral sequence data relating to the measurement response of actual targets to equivalent reference target response sequence data relating to a measurement response of the targets as designed; and performing a process monitoring action based on the comparison of said measured target response sequence data and reference target response sequence data. The method may also comprise determining stack parameters from the measured target response spectral sequence data and reference target response spectral sequence data.

公开(公告)号：US20180129139A1

公开(公告)日：2018-05-10

申请号：US15808874

申请日：2017-11-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Aiqin JIANG ,  Arie Jeffrey Den Boef ,  Kaustuve Bhattacharyya ,  Hans Van Der Laan ,  Bart Visser ,  Martin Jacobus Johan Jak

IPC: G03F7/20 ,  G05B19/406

CPC classification number: G03F7/70516 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/70633 ,  G03F7/70683 ,  G05B19/406 ,  G05B2219/45028 ,  H01L22/12 ,  H01L22/20

Abstract: A method including obtaining a fit of data for overlay of a metrology target for a patterning process as a function of a stack difference parameter of the metrology target; and using, by a hardware computer, a slope of the fit (i) to differentiate a metrology target measurement recipe from another metrology target measurement recipe, or (ii) calculate a corrected value of overlay, or (iii) to indicate that an overlay measurement value obtained using the metrology target should be used, or not be used, to configure or modify an aspect of the patterning process, or (iv) any combination selected from (i)-(iii).

公开(公告)号：US09958789B2

公开(公告)日：2018-05-01

申请号：US15186031

申请日：2016-06-17

Applicant: ASML Netherlands B.V.

Inventor： Peter Hanzen Wardenier ,  Frank Staals ,  Jean-Pierre Agnes Henricus Marie Vaessen ,  Hans Van Der Laan

IPC: G03F7/20 ,  G01B11/03

CPC classification number: G03F7/70591 ,  G01B11/03 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633

Abstract: Disclosed is a method of determining a correction for measured values of radiation diffracted from a target comprising a plurality of periodic structures, subsequent to measurement of the target using measurement radiation defining a measurement field. The correction acts to correct for measurement field location dependence in the measured values. The method comprises performing a first and second measurements of the periodic structures; and determining a correction from said first measurement and said second measurement. The first measurement is performed with said target being in a normal measurement location with respect to the measurement field. The second measurement is performed with the periodic structure in a shifted location with respect to the measurement field, said shifted location comprising the location of another of said periodic structures when said target is in said normal measurement location with respect to the measurement field.

公开(公告)号：US12228862B2

公开(公告)日：2025-02-18

申请号：US18207732

申请日：2023-06-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Hans Van Der Laan ,  Wim Tjibbo Tel ,  Marinus Jochemsen ,  Stefan Hunsche

IPC: G03F7/00 ,  G06F30/398 ,  H01L21/66

Abstract: A process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.

公开(公告)号：US20180217508A1

公开(公告)日：2018-08-02

申请号：US15874972

申请日：2018-01-19

Applicant: ASML Netherlands B.V.

Inventor： Adam URBANCZYK ,  Hans Van Der Laan ,  Grzegorz Grzela ,  Alberto Da Costa Assafrao ,  Chien-Hung Tseng ,  Jay Jianhui Chen

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G01N21/47 ,  G01N2021/95615 ,  G03F7/70516 ,  G03F7/70525 ,  G03F7/70633

Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus. The method comprises: comparing measured target response spectral sequence data relating to the measurement response of actual targets to equivalent reference target response sequence data relating to a measurement response of the targets as designed; and performing a process monitoring action based on the comparison of said measured target response sequence data and reference target response sequence data. The method may also comprise determining stack parameters from the measured target response spectral sequence data and reference target response spectral sequence data.