公开(公告)号：US20230075471A1

公开(公告)日：2023-03-09

申请号：US17470624

申请日：2021-09-09

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Herng Yau Yoong ,  Vibhu Jindal

IPC: G03F1/24 ,  G03F1/54 ,  H01L21/033

Abstract: Extreme ultraviolet (EUV) mask blanks, methods of forming EUV mask blanks and production systems therefor are disclosed. The EUV mask blanks comprise a multilayer reflective stack on a substrate. The multilayer reflective stack comprises a trilayer film including a first film, a second film, and a third film. Some EUV mask blanks include an interface layer on one or more of the first film, the second film and the third film. EUV mask blanks described herein have low Zeff and high reflectance over large bandwidth of reflection angle, thereby minimizing the M3D effect, especially for high-NA EUV scanners.

公开(公告)号：US11556053B2

公开(公告)日：2023-01-17

申请号：US17157088

申请日：2021-01-25

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Wen Xiao ,  Vibhu Jindal ,  Azeddine Zerrade

IPC: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising an antimony-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.

公开(公告)号：US20220221786A1

公开(公告)日：2022-07-14

申请号：US17708593

申请日：2022-03-30

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Vibhu Jindal ,  Weimin Li ,  Shuwei Liu

IPC: G03F1/24 ,  G02B5/08 ,  G03F7/20

Abstract: A multilayer stack in the form of a Bragg reflector comprising a graded interfacial layer and a method of manufacturing are disclosed. The graded interfacial layer eliminates the formation of low-reflectivity interfaces in a multilayer stack and reduces roughness of interfaces in a multilayer stack.

公开(公告)号：US11366379B2

公开(公告)日：2022-06-21

申请号：US16877990

申请日：2020-05-19

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Vibhu Jindal

IPC: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer embedded in the multilayer stack of reflective layers.

公开(公告)号：US20210382398A1

公开(公告)日：2021-12-09

申请号：US16893538

申请日：2020-06-05

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Vibhu Jindal ,  Huajun Liu ,  Herng Yau Yoong

IPC: G03F7/20 ,  G03F1/22 ,  G03F1/54 ,  G03F1/00

Abstract: Apparatus, methods and are disclosed for measuring refractive index of an absorber material used in EUV phase shift masks. The method and apparatus utilize a reference measurement and as series of reflectance measurements at a range of EUV wavelengths and thickness values for the absorber material to determine the refractive index of the absorber material.

公开(公告)号：US11194244B2

公开(公告)日：2021-12-07

申请号：US16720520

申请日：2019-12-19

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Chang Ke ,  Wen Xiao ,  Vibhu Jindal

IPC: G03F1/22 ,  G03F1/54

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from amorphous tantalum nitride formed by non-reactive sputtering.

公开(公告)号：US20210232039A1

公开(公告)日：2021-07-29

申请号：US17152068

申请日：2021-01-19

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Wen Xiao ,  Vibhu Jindal ,  Azeddine Zerrade

IPC: G03F1/24 ,  G03F1/54 ,  H01L21/033

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from tantalum and ruthenium.

公开(公告)号：US20200371431A1

公开(公告)日：2020-11-26

申请号：US16877990

申请日：2020-05-19

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Vibhu Jindal

IPC: G03F1/54 ,  G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer embedded in the multilayer stack of reflective layers.

公开(公告)号：US20200335331A1

公开(公告)日：2020-10-22

申请号：US16850670

申请日：2020-04-16

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Vibhu Jindal ,  Sanjay Bhat

IPC: H01L21/02 ,  H01L21/687 ,  H01L21/68

Abstract: A physical vapor deposition chamber comprising a tilting substrate support is described. Methods of processing a substrate are also provided comprising tilting at least one of the substrate and the target to improve the uniformity of the layer on the substrate from the center of the substrate to the edge of the substrate. Process controllers are also described which comprise one or more process configurations causing the physical deposition chamber to perform the operations of rotating a substrate support within the physical deposition chamber and tilting the substrate support at a plurality of angles with respect to a horizontal axis.

公开(公告)号：US11782337B2

公开(公告)日：2023-10-10

申请号：US17470624

申请日：2021-09-09

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Herng Yau Yoong ,  Vibhu Jindal

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods of forming EUV mask blanks and production systems therefor are disclosed. The EUV mask blanks comprise a multilayer reflective stack on a substrate. The multilayer reflective stack comprises a trilayer film including a first film, a second film, and a third film. Some EUV mask blanks include an interface layer on one or more of the first film, the second film and the third film. EUV mask blanks described herein have low Zeff and high reflectance over large bandwidth of reflection angle, thereby minimizing the M3D effect, especially for high-NA EUV scanners.