Lamp infrared radiation profile control by lamp filament design and positioning

    公开(公告)号:US11057963B2

    公开(公告)日:2021-07-06

    申请号:US16129879

    申请日:2018-09-13

    Abstract: Methods and apparatus disclosed herein generally relate to lamp heating of process chambers used to process semiconductor substrates. More specifically, implementations disclosed herein relate to arrangement and control of lamps for heating of semiconductor substrates. In some implementations of the present disclosure, fine-tuning of temperature control is achieved by dividing different lamps within an array of lamps into various subgroups or lamp assemblies defined by a specific characteristic. These various subgroups may be based on characteristics such as lamp design and/or lamp positioning within the processing chamber.

    Liner for processing chamber
    22.
    发明授权

    公开(公告)号:US11021790B2

    公开(公告)日:2021-06-01

    申请号:US16521826

    申请日:2019-07-25

    Abstract: Embodiments herein relate to chamber liners with a multi-piece design for use in processing chambers. The multi-piece design can have an inner portion and an outer portion. A portion of the inner surface of the outer portion may be designed to be in contact with the outer surface of the inner portion at a single junction point, creating a thermal barrier between the inner portion and outer portion, thus reducing heat transfer from the inner portion and outer portion. The thermal barrier creates higher temperatures at the chamber liner inner surface and therefore leads to shorter heat up times within the chamber. Additionally, the thermal barrier also creates lower temperatures near the base ring and outer surface of the outer ring, thereby protecting the chamber walls and requiring less thermal regulation/dissipation at the chamber walls.

    Susceptor support shaft with uniformity tuning lenses for EPI process
    23.
    发明授权
    Susceptor support shaft with uniformity tuning lenses for EPI process 有权
    受体支撑轴具有用于EPI过程的均匀性调焦镜头

    公开(公告)号:US09532401B2

    公开(公告)日:2016-12-27

    申请号:US14181035

    申请日:2014-02-14

    CPC classification number: H05B1/0227 H05B2203/032

    Abstract: Embodiments of the invention generally relate to susceptor support shafts and process chambers containing the same. A susceptor support shaft supports a susceptor thereon, which in turn, supports a substrate during processing. The susceptor support shaft reduces variations in temperature measurement of the susceptor and/or substrate by providing a consistent path for a pyrometer focal beam directed towards the susceptor and/or substrate, even when the susceptor support shaft is rotated. The susceptor support shafts also have a relatively low thermal mass which increases the ramp up and ramp down rates of a process chamber. In some embodiments, a custom made refractive element can be removably placed on the top of the solid disc to redistribute secondary heat distributions across the susceptor and/or substrate for optimum thickness uniformity of epitaxy process.

    Abstract translation: 本发明的实施例通常涉及承载支撑轴和包含该基座的处理室。 基座支撑轴支撑在其上的基座,其在处理期间又支撑基板。 基座支撑轴通过为指向基座和/或基板的高温计光束提供一致的路径来减小基座和/或基板的温度测量的变化,即使基座支撑轴旋转。 基座支撑轴还具有相对较低的热质量,这增加了处理室的斜坡上升和下降速率。 在一些实施例中,定制的折射元件可以可移除地放置在固体盘的顶部上,以重新分布穿过基座和/或衬底的二次热分布,以获得外延工艺的最佳厚度均匀性。

    SUSCEPTOR SUPPORT SHAFT WITH UNIFORMITY TUNING LENSES FOR EPI PROCESS
    24.
    发明申请
    SUSCEPTOR SUPPORT SHAFT WITH UNIFORMITY TUNING LENSES FOR EPI PROCESS 有权
    SUSEEPTOR支持轴与EPI过程的均匀调谐镜头

    公开(公告)号:US20140263268A1

    公开(公告)日:2014-09-18

    申请号:US14181035

    申请日:2014-02-14

    CPC classification number: H05B1/0227 H05B2203/032

    Abstract: Embodiments of the invention generally relate to susceptor support shafts and process chambers containing the same. A susceptor support shaft supports a susceptor thereon, which in turn, supports a substrate during processing. The susceptor support shaft reduces variations in temperature measurement of the susceptor and/or substrate by providing a consistent path for a pyrometer focal beam directed towards the susceptor and/or substrate, even when the susceptor support shaft is rotated. The susceptor support shafts also have a relatively low thermal mass which increases the ramp up and ramp down rates of a process chamber. In some embodiments, a custom made refractive element can be removably placed on the top of the solid disc to redistribute secondary heat distributions across the susceptor and/or substrate for optimum thickness uniformity of epitaxy process.

    Abstract translation: 本发明的实施例通常涉及承载支撑轴和包含该基座的处理室。 基座支撑轴支撑在其上的基座,其在处理期间又支撑基板。 基座支撑轴通过为指向基座和/或基板的高温计光束提供一致的路径来减小基座和/或基板的温度测量的变化,即使基座支撑轴旋转。 基座支撑轴还具有相对较低的热质量,这增加了处理室的斜坡上升和下降速率。 在一些实施例中,定制的折射元件可以可移除地放置在固体盘的顶部上,以重新分布穿过基座和/或衬底的二次热分布,以获得外延工艺的最佳厚度均匀性。

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