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51 条记录 (耗时 0.028 秒)

    Aromatic enediyne derivatives, organic semiconductor thin films using the same and manufacturing methods thereof, and electronic devices incorporating such films
    24.
    发明授权
    Aromatic enediyne derivatives, organic semiconductor thin films using the same and manufacturing methods thereof, and electronic devices incorporating such films 有权
    芳香族烯衍生物，使用该衍生物的有机半导体薄膜及其制造方法以及包含这种膜的电子器件

    公开(公告)号：US07534899B2

    公开(公告)日：2009-05-19

    申请号：US11583085

    申请日：2006-10-19

    申请人： Eun Jeong Jeong ,  Hyun Sik Moon ,  Kook Min Han

    发明人： Eun Jeong Jeong ,  Hyun Sik Moon ,  Kook Min Han

    IPC分类号： C07D409/14

    CPC分类号： H01L51/0545 ,  C07D333/18 ,  H01L51/0003 ,  H01L51/0068 ,  Y02E10/549 ,  Y02P70/521

    摘要： Disclosed are aromatic enediyne derivatives, methods of manufacturing organic semiconductor thin films from such aromatic enediyne derivatives, and methods of fabricating electronic devices incorporating such organic semiconductor thin films. Aromatic enediyne derivatives according to example embodiments provide improved chemical and/or electrical stability which may improve the reliability of the resulting semiconductor devices. Aromatic enediyne derivatives according to example embodiments may also be suitable for deposition on various substrates via solution-based processes, for example, spin coating, at temperatures at or near room temperature to form a coating film that is then heated to form an organic semiconductor thin film. The availability of this reduced temperature processing allows the use of the aromatic enediynes derivatives on large substrate surfaces and/or on substrates not suitable for higher temperature processing. Accordingly, the organic semiconductor thin films according to example embodiments may be incorporated in thin film transistors, electroluminescent devices, solar cells, and memory devices.

    摘要翻译： 公开了芳族烯二炔衍生物，从这种芳族烯二炔衍生物制造有机半导体薄膜的方法，以及制造并入这种有机半导体薄膜的电子器件的方法。 根据示例性实施方案的芳族烯二炔衍生物提供改善的化学和/或电稳定性，其可以提高所得半导体器件的可靠性。 根据示例性实施方案的芳族烯二炔衍生物还可适用于通过基于溶液的方法例如旋涂，在室温或接近室温的温度下沉积在各种基材上，以形成涂膜，然后将其加热形成有机半导体薄膜 电影。 这种降低温度处理的可用性允许在大衬底表面上和/或不适于较高温度处理的衬底上使用芳族烯二炔衍生物。 因此，根据示例性实施例的有机半导体薄膜可以结合在薄膜晶体管，电致发光器件，太阳能电池和存储器件中。

    Organic semiconductor thin films using aromatic enediyne derivatives and manufacturing methods thereof, and electronic devices incorporating such films
    26.
    发明申请
    Organic semiconductor thin films using aromatic enediyne derivatives and manufacturing methods thereof, and electronic devices incorporating such films 有权
    使用芳香族烯二炔衍生物的有机半导体薄膜及其制造方法以及包含这种膜的电子器件

    公开(公告)号：US20090263932A1

    公开(公告)日：2009-10-22

    申请号：US12382033

    申请日：2009-03-06

    申请人： Eun Jeong Jeong ,  Hyun Sik Moon ,  Kook Min Han

    发明人： Eun Jeong Jeong ,  Hyun Sik Moon ,  Kook Min Han

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0545 ,  C07D333/18 ,  H01L51/0003 ,  H01L51/0068 ,  Y02E10/549 ,  Y02P70/521

    摘要： Disclosed are organic semiconductor thin films using aromatic enediyne derivatives, manufacturing methods thereof, and methods of fabricating electronic devices incorporating such organic semiconductor thin films. Aromatic enediyne derivatives according to example embodiments provide improved chemical and/or electrical stability which may improve the reliability of the resulting semiconductor devices. Aromatic enediyne derivatives according to example embodiments may also be suitable for deposition on various substrates via solution-based processes, for example, spin coating, at temperatures at or near room temperature to form a coating film that is then heated to form an organic semiconductor thin film. The availability of this reduced temperature processing allows the use of the aromatic enediynes derivatives on large substrate surfaces and/or on substrates not suitable for higher temperature processing. Accordingly, the organic semiconductor thin films according to example embodiments may be incorporated in thin film transistors, electroluminescent devices, solar cells, and memory devices.

    摘要翻译： 公开了使用芳族烯二炔衍生物的有机半导体薄膜，其制造方法，以及制造结合有机半导体薄膜的电子器件的制造方法。 根据示例性实施方案的芳族烯二炔衍生物提供改善的化学和/或电稳定性，其可以提高所得半导体器件的可靠性。 根据示例性实施方案的芳族烯二炔衍生物还可适用于通过基于溶液的方法例如旋涂，在室温或接近室温的温度下沉积在各种基材上，以形成涂膜，然后将其加热形成有机半导体薄膜 电影。 这种降低温度处理的可用性允许在大衬底表面上和/或不适于较高温度处理的衬底上使用芳族烯二炔衍生物。 因此，根据示例性实施例的有机半导体薄膜可以结合在薄膜晶体管，电致发光器件，太阳能电池和存储器件中。

    Organic semiconductor thin films using aromatic enediyne derivatives and manufacturing methods thereof, and electronic devices incorporating such films
    27.
    发明授权
    Organic semiconductor thin films using aromatic enediyne derivatives and manufacturing methods thereof, and electronic devices incorporating such films 有权
    使用芳香族烯二炔衍生物的有机半导体薄膜及其制造方法以及包含这种膜的电子器件

    公开(公告)号：US08097694B2

    公开(公告)日：2012-01-17

    申请号：US12382033

    申请日：2009-03-06

    申请人： Eun Jeong Jeong ,  Hyun Sik Moon ,  Kook Min Han

    发明人： Eun Jeong Jeong ,  Hyun Sik Moon ,  Kook Min Han

    IPC分类号： C08F38/00 ,  H01L51/40 ,  C08G83/00

    CPC分类号： H01L51/0545 ,  C07D333/18 ,  H01L51/0003 ,  H01L51/0068 ,  Y02E10/549 ,  Y02P70/521

    摘要： Disclosed are organic semiconductor thin films using aromatic enediyne derivatives, manufacturing methods thereof, and methods of fabricating electronic devices incorporating such organic semiconductor thin films. Aromatic enediyne derivatives according to example embodiments provide improved chemical and/or electrical stability which may improve the reliability of the resulting semiconductor devices. Aromatic enediyne derivatives according to example embodiments may also be suitable for deposition on various substrates via solution-based processes, for example, spin coating, at temperatures at or near room temperature to form a coating film that is then heated to form an organic semiconductor thin film. The availability of this reduced temperature processing allows the use of the aromatic enediynes derivatives on large substrate surfaces and/or on substrates not suitable for higher temperature processing. Accordingly, the organic semiconductor thin films according to example embodiments may be incorporated in thin film transistors, electroluminescent devices, solar cells, and memory devices.

    摘要翻译： 公开了使用芳族烯二炔衍生物的有机半导体薄膜，其制造方法，以及制造结合有机半导体薄膜的电子器件的制造方法。 根据示例性实施方案的芳族烯二炔衍生物提供改善的化学和/或电稳定性，其可以提高所得半导体器件的可靠性。 根据示例性实施方案的芳族烯二炔衍生物还可适用于通过基于溶液的方法例如旋涂，在室温或接近室温的温度下沉积在各种基材上，以形成涂膜，然后将其加热形成有机半导体薄膜 电影。 这种降低温度处理的可用性允许在大衬底表面上和/或不适于较高温度处理的衬底上使用芳族烯二炔衍生物。 因此，根据示例性实施例的有机半导体薄膜可以结合在薄膜晶体管，电致发光器件，太阳能电池和存储器件中。

    Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same
    28.
    发明授权
    Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same 有权
    星形低聚噻吩 - 亚芳基衍生物和使用其的有机薄膜晶体管

    公开(公告)号：US08058457B2

    公开(公告)日：2011-11-15

    申请号：US12656831

    申请日：2010-02-17

    申请人： Kook Min Han ,  Eun Jeong Jeong ,  Chang Ju Kim ,  Eun Kyung Lee

    发明人： Kook Min Han ,  Eun Jeong Jeong ,  Chang Ju Kim ,  Eun Kyung Lee

    IPC分类号： C07D409/14 ,  C07D417/14 ,  C07D413/14 ,  H01L51/00

    CPC分类号： H01L51/0068 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0062 ,  H01L51/0067 ,  H01L51/0069 ,  H01L51/007 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0545

    摘要： A star-shaped oligothiophene-arylene derivative in which an oligothiophene having p-type semiconductor characteristics is bonded to an arylene having n-type semiconductor characteristics positioned in the central moiety of the molecule and forms a star shape with the arylene, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative. The star-shaped oligothiophene-arylene derivative can be spin-coated at room temperature, leading to the fabrication of organic thin film transistors simultaneously satisfying the requirements of high charge carrier mobility and low off-state leakage current.

    摘要翻译： 具有p型半导体特性的低聚噻吩与具有位于分子的中心部分的n型半导体特性的亚芳基键合并形成具有亚芳基的星形的星形低聚噻吩 - 亚芳基衍生物，从而同时显示两者 p型和n型半导体特性。 另外，使用低聚噻吩 - 亚芳基衍生物的有机薄膜晶体管。 星形低聚噻吩 - 亚芳基衍生物可在室温下旋涂，导致同时满足高电荷载流子迁移率和低截止状态漏电流要求的有机薄膜晶体管的制造。

    Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same
    29.
    发明授权
    Star-shaped oligothiophene-arylene derivatives and organic thin film transistors using the same 有权
    星形低聚噻吩 - 亚芳基衍生物和使用其的有机薄膜晶体管

    公开(公告)号：US07692029B2

    公开(公告)日：2010-04-06

    申请号：US11116326

    申请日：2005-04-28

    申请人： Kook Min Han ,  Eun Jeong Jeong ,  Chang Ju Kim ,  Eun Kyung Lee

    发明人： Kook Min Han ,  Eun Jeong Jeong ,  Chang Ju Kim ,  Eun Kyung Lee

    IPC分类号： C07D409/14 ,  C07D417/14 ,  C07D413/14 ,  H01L51/00

    CPC分类号： H01L51/0068 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0062 ,  H01L51/0067 ,  H01L51/0069 ,  H01L51/007 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0545

    摘要： A star-shaped oligothiophene-arylene derivative in which an oligothiophene having p-type semiconductor characteristics is bonded to an arylene having n-type semiconductor characteristics positioned in the central moiety of the molecule and forms a star shape with the arylene, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative. The star-shaped oligothiophene-arylene derivative can be spin-coated at room temperature, leading to the fabrication of organic thin film transistors simultaneously satisfying the requirements of high charge carrier mobility and low off-state leakage current.

    摘要翻译： 具有p型半导体特性的低聚噻吩与具有位于分子的中心部分的n型半导体特性的亚芳基键合并形成具有亚芳基的星形的星形低聚噻吩 - 亚芳基衍生物，从而同时显示两者 p型和n型半导体特性。 另外，使用低聚噻吩 - 亚芳基衍生物的有机薄膜晶体管。 星形低聚噻吩 - 亚芳基衍生物可在室温下旋涂，导致同时满足高电荷载流子迁移率和低截止状态漏电流要求的有机薄膜晶体管的制造。