公开(公告)号：US20060076623A1

公开(公告)日：2006-04-13

申请号：US11270708

申请日：2005-11-09

申请人： Brent Anderson ,  MeiKei Leong ,  Edward Nowak

发明人： Brent Anderson ,  MeiKei Leong ,  Edward Nowak

IPC分类号： H01L27/12 ,  H01L29/788

CPC分类号： H01L21/76251 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823878 ,  H01L21/845 ,  H01L27/1203 ,  H01L27/1207 ,  H01L27/1211 ,  H01L29/66795 ,  H01L29/785 ,  Y10S438/982

摘要： Disclosed is an integrated circuit structure that has a substrate having at least two types of crystalline orientations. First-type transistors (e.g., NFETs) are formed on first portions of the substrate having a first type of crystalline orientation, and second-type transistors (e.g., PFETs) are formed on second portions of the substrate having a second type of crystalline orientation. Some of the first portions of the substrate comprise non-floating substrate portions, and the remaining ones of the first portions and all of the second portions of the substrate comprise floating substrate portions.

公开(公告)号：US20050275045A1

公开(公告)日：2005-12-15

申请号：US10710007

申请日：2004-06-11

申请人： Brent Anderson ,  Andres Bryant ,  William Clark ,  Edward Nowak

发明人： Brent Anderson ,  Andres Bryant ,  William Clark ,  Edward Nowak

IPC分类号： H01L21/336 ,  H01L29/10 ,  H01L29/76 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/7833 ,  H01L29/1045 ,  H01L29/66537 ,  H01L29/6656 ,  H01L29/66583 ,  H01L29/7835 ,  H01L29/785

摘要： A field effect transistor (FET) has underlap regions adjacent to the channel doping region. The underlap regions have very low dopant concentrations of less than 1×1017/cc or 5×1016/cc and so tend to have a high resistance. The underlap regions reduce overlap capacitance and thereby increase switching speed. High resistance of the underlap regions is not problematic at subthreshold voltages because the channel doping region also has a high resistance at subthreshold voltages. Consequently, the present FET has low capacitance and high speed and is particularly well suited for operation in the subthreshold regime.

摘要翻译： 场效应晶体管（FET）具有与沟道掺杂区域相邻的底部区域。 底层区域具有小于1×10 17 / cc或5×10 16 / cc的非常低的掺杂剂浓度，因此倾向于具有高电阻。 下层区域减少重叠电容，从而提高开关速度。 欠电压区域的高电阻在亚阈值电压下是没有问题的，因为沟道掺杂区域在亚阈值电压下也具有高电阻。 因此，本FET具有低电容和高速度，并且特别适合于在亚阈值状态下操作。

公开(公告)号：US06854887B2

公开(公告)日：2005-02-15

申请号：US10225026

申请日：2002-08-20

申请人： Brent Anderson

发明人： Brent Anderson

IPC分类号： B65D33/25 ,  B65D33/16

CPC分类号： B65D33/2591 ,  Y10T24/2532

摘要： The present invention provides a recloseable bag having a mouth and including a zippered closure at the mouth. The zippered closure has a first end and a second end. The bag also includes a slider having a body with having a first edge and a second edge. The slider is movable along the zippered closure. An arm extends from one of the first edge or second edge of the slider body. The arm includes a distal end.

摘要翻译： 本发明提供了一种具有嘴巴的可再封闭的袋子，并且在嘴部包括一个拉链封闭物。 拉链封闭件具有第一端和第二端。 该袋还包括具有主体的滑块，该主体具有第一边缘和第二边缘。 滑块可沿着拉链封闭件移动。 臂从滑块体的第一边缘或第二边缘中的一个延伸。 手臂包括一个远端。

公开(公告)号：US20140074264A1

公开(公告)日：2014-03-13

申请号：US14082020

申请日：2013-11-15

申请人： Brent Anderson ,  Douglas E. Nichols

发明人： Brent Anderson ,  Douglas E. Nichols

IPC分类号： A63B24/00

CPC分类号： A63B24/0075 ,  A63B24/00 ,  A63B2225/15 ,  A63B2225/20 ,  A63B2225/50 ,  G06F19/3481

摘要： A multiple exercise activity recording system in which each piece of equipment, exercise movement exercise area, fitness activity or biometric in a facility where exercises are preformed is assigned to an exercise identification module. Each exercise identification module is linked or coupled to a terminal with a display and a manual input device. Each user is assigned a personal identification device that is presented or inputted into the terminal before or after the exercise equipment or exercise area is used. After exercising, the user activates the exercise identification module assigned to the exercise equipment or to the exercise area. Upon activation, one or more sub-routines automatically run in the terminal. Prompts presented on the display then request user input of information pertinent to the exercise activity. The inputted information may be stored in the terminal or immediately transmitted to a permanent member data file on a local or remote server.

摘要翻译： 运动锻炼记录系统，其中每个设备，锻炼运动锻炼区域，健身活动或锻炼所进行的设施中的生物特征分配给运动识别模块。 每个运动识别模块通过显示器和手动输入装置连接或连接到终端。 每个用户被分配一个个人识别装置，其在使用锻炼设备或运动区域之前或之后呈现或输入到终端。 运动后，用户激活分配到运动器材或锻炼区域的运动识别模块。 激活后，一个或多个子程序在终端中自动运行。 显示屏上提示的提示要求用户输入与运动活动相关的信息。 输入的信息可以存储在终端中，或者立即发送到本地或远程服务器上的永久成员数据文件。

公开(公告)号：USD677856S1

公开(公告)日：2013-03-19

申请号：US29367117

申请日：2010-08-03

申请人： Lynn Krumholz ,  Brent Anderson

设计人： Lynn Krumholz ,  Brent Anderson

公开(公告)号：USD613029S1

公开(公告)日：2010-04-06

申请号：US29290330

申请日：2007-11-20

申请人： Lynn Krumholz ,  Brent Anderson

设计人： Lynn Krumholz ,  Brent Anderson

公开(公告)号：US07507183B2

公开(公告)日：2009-03-24

申请号：US10819052

申请日：2004-04-06

申请人： Brent Anderson ,  Douglas E. Nichols

发明人： Brent Anderson ,  Douglas E. Nichols

IPC分类号： A63B15/02

CPC分类号： A63B24/00 ,  A63B2225/15 ,  A63B2225/20 ,  A63B2225/50 ,  G06F19/00 ,  G06F19/3481

摘要： A health club exercise records system in which members to the health club are given a handheld device that is pre-programmed by the trainer or health club operator to record different exercise activities. The handheld device includes a built-in numeric keypad, a display monitor, and optical reader designed to communicate with a compatible ID tag located on or in the vicinity of the exercise activity data source. Loaded into the working memory of the handheld device is a pre-programmed exercise data collection program. The exercise data collection program displays one or more sub-routines to the member requesting the member to input information regarding the exercise. The sub-routines are specific to the exercise activity data source and present one or more prompts requiring the member to input information. The inputted information is stored in a temporary data file located on the handheld device or transmitted immediately to a permanent member data file on a local server located in the health club. The system may also include an uplink terminal for transmitting the data in the temporarily data file to a remote server connected to a network operations center. A fitness tools software program is loaded into the server for collecting and processing the data in the member's permanent data file which may be reviewed by the trainer and/or member.

摘要翻译： 一个健康俱乐部运动记录系统，其中健康俱乐部的成员被给予由训练者或健康俱乐部操作者预先编程以记录不同运动活动的手持装置。 手持设备包括内置的数字小键盘，显示监视器和设计用于与位于运动活动数据源附近或附近的兼容ID标签通信的光学读取器。 加载到手持设备的工作存储器中的是预编程的运动数据收集程序。 锻炼数据收集程序向成员显示一个或多个子程序，请求成员输入关于锻炼的信息。 这些子程序特定于运动活动数据源，并呈现要求成员输入信息的一个或多个提示。 输入的信息存储在位于手持设备上的临时数据文件中，或者立即发送到位于健康俱乐部的本地服务器上的永久性成员数据文件。 该系统还可以包括用于将临时数据文件中的数据发送到连接到网络操作中心的远程服务器的上行链路终端。 将健身工具软件程序加载到服务器中，用于收集和处理会员的永久数据文件中的数据，该文件可由培训者和/或成员审核。

公开(公告)号：US20090057781A1

公开(公告)日：2009-03-05

申请号：US11846825

申请日：2007-08-29

申请人： Brent Anderson ,  Andres Bryant ,  Edward J. Nowak

发明人： Brent Anderson ,  Andres Bryant ,  Edward J. Nowak

IPC分类号： H01L29/94 ,  H01L29/76

CPC分类号： H01L27/0629 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/66795 ,  H01L29/785

摘要： A semiconductor structure includes active multi-gate fin-type field effect transistor (MUGFET) structures and inactive MUGFET fill structures between the active MUGFET structures. The active MUGFET structures comprise transistors that change conductivity depending upon voltages within gates of the active MUGFET structures. Conversely, the inactive MUGFET fill structures comprise passive devices that do not change conductivity irrespective of voltages within gates of the inactive MUGFET fill structures. The gates of the active MUGFET structures are parallel to the gates of the inactive MUGFET fill structures, and the fins of the active MUGFET structures are the same size as the fins of the inactive MUGFET fill structures. The active MUGFET structures have the same pitch as the gates of the inactive MUGFET fill structures. The gates of the active MUGFET structures comprise active doping agents, but the inactive MUGFET fill structures do not contain the active doping agents.

摘要翻译： 半导体结构包括有源多栅极鳍型场效应晶体管（MUGFET）结构和在活性MUGFET结构之间的无活性MUGFET填充结构。 活性MUGFET结构包括根据活性MUGFET结构的门内的电压改变导电性的晶体管。 相反，无活性的MUGFET填充结构包括不影响无活性MUGFET填充结构的门内的电压的电导率的无源器件。 活动MUGFET结构的门平行于非活性MUGFET填充结构的门，并且活动MUGFET结构的翅片与非活性MUGFET填充结构的翅片的尺寸相同。 活动的MUGFET结构具有与非活性MUGFET填充结构的门相同的间距。 活性MUGFET结构的栅极包含活性掺杂剂，但是不活泼的MUGFET填充结构不含活性掺杂剂。

公开(公告)号：US20080090361A1

公开(公告)日：2008-04-17

申请号：US11866435

申请日：2007-10-03

申请人： Brent Anderson ,  Andres Bryant ,  Jeffrey Johnson ,  Edward Nowak

发明人： Brent Anderson ,  Andres Bryant ,  Jeffrey Johnson ,  Edward Nowak

IPC分类号： H01L21/336

CPC分类号： H01L29/785 ,  H01L29/42384 ,  H01L29/66795

摘要： Disclosed are embodiments of a trigate field effect transistor that comprises a fin-shaped semiconductor body with a channel region and source/drain regions on either side of the channel region. Thick gate dielectric layers separate the top surface and opposing sidewalls of the channel region from the gate conductor in order to suppress conductivity in the channel planes. A thin gate dielectric layer separates the upper corners of the channel region from the gate conductor in order to optimize conductivity in the channel corners. To further emphasize the current flow in the channel corners, the source/drain regions can be formed in the upper corners of the semiconductor body alone. Alternatively, source/drain extension regions can be formed only in the upper corners of the semiconductor body adjacent to the gate conductor and deep source/drain diffusion regions can be formed in the ends of the semiconductor body.

摘要翻译： 公开了一种触发场效应晶体管的实施例，其包括具有沟道区的鳍状半导体本体和沟道区两侧的源极/漏极区。 厚栅电介质层将沟道区的顶表面和相对的侧壁与栅极导体分开，以便抑制沟道平面中的导电性。 薄栅极电介质层将沟道区的上角与栅极导体分开，以便优化沟道角中的导电性。 为了进一步强调通道角中的电流流动，源极/漏极区域可以单独形成在半导体主体的上角部。 或者，源极/漏极延伸区域仅可以形成在与栅极导体相邻的半导体本体的上角处，并且可以在半导体本体的端部形成深的源极/漏极扩散区域。

公开(公告)号：US20080036000A1

公开(公告)日：2008-02-14

申请号：US11876830

申请日：2007-10-23

申请人： Brent Anderson ,  Andres Bryant ,  Edward Nowak

发明人： Brent Anderson ,  Andres Bryant ,  Edward Nowak

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66772 ,  H01L29/665 ,  H01L29/78645 ,  H01L29/78648

摘要： A semiconductor structure and the associated method for fabricating the same. The semiconductor structure includes (a) a semiconductor substrate, (b) a back gate region on the semiconductor substrate, (c) a back gate dielectric region on the back gate region, (d) a semiconductor region on the back gate dielectric region comprising a channel region disposed between first and second source/drain (S/D) regions, (e) a main gate dielectric region on the semiconductor region, (f) a main gate region on the main gate dielectric region, (g) a first contact pad adjacent to the first S/D region and electrically insulated from the back gate region, and (h) a first buried dielectric region that physically and electrically isolates the first contact pad and the back gate region, and wherein the first buried dielectric region has a first thickness in the first direction at least 1.5 times a second thickness of the back gate region.

摘要翻译： 半导体结构及其制造方法。 半导体结构包括（a）半导体衬底，（b）半导体衬底上的背栅区，（c）背栅区上的背栅电介质区，（d）背栅电介质区上的半导体区，包括 设置在第一和第二源极/漏极（S / D）区域之间的沟道区域，（e）半导体区域上的主栅极电介质区域，（f）主栅极电介质区域上的主栅极区域，（g） 接触垫，其与所述第一S / D区相邻并且与所述背栅区电绝缘，以及（h）物理地和电隔离所述第一接触焊盘和所述背栅区的第一掩埋介电区，并且其中所述第一掩埋介电区 在第一方向上具有至少1.5倍于后栅极区域的第二厚度的第一厚度。