公开(公告)号：US20070051955A1

公开(公告)日：2007-03-08

申请号：US11594950

申请日：2006-11-09

申请人： Soon Yoo ,  Youn Chang ,  Heung Cho

发明人： Soon Yoo ,  Youn Chang ,  Heung Cho

IPC分类号： H01L29/04 ,  H01L27/12

CPC分类号： H01L27/124 ,  G02F1/13458 ,  G02F1/136213 ,  G02F1/136227 ,  G02F2001/136236 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/1288 ,  Y10S438/942

摘要： A thin film transistor array substrate has a gate electrode of the thin film transistor, a gate line connected to the gate electrode, and a gate pad connected to the gate line; a source/drain pattern including a source electrode and a drain electrode of the thin film transistor, a data line connected to the source electrode, a data pad connected to the data line, a storage electrode formed and superimposed with the gate line; a semiconductor pattern formed in low part of the substrate; a transparent electrode pattern including a pixel electrode connected to the drain electrode and the storage electrode, a gate pad protection electrode covering the gate pad, and a data pad protection electrode covering the data pad; and a protection pattern and a gate insulation pattern stacked in a region other than the region where the transparent electrode pattern is formed.

摘要翻译： 薄膜晶体管阵列基板具有薄膜晶体管的栅电极，连接到栅电极的栅极线和连接到栅极线的栅极焊盘; 源极/漏极图案，包括薄膜晶体管的源电极和漏电极，连接到源电极的数据线，连接到数据线的数据焊盘，形成并与栅极线重叠的存储电极; 形成在基板的低部分的半导体图案; 包括连接到漏电极和存储电极的像素电极的透明电极图案，覆盖栅极焊盘的栅极焊盘保护电极和覆盖数据焊盘的数据焊盘保护电极; 以及层叠在除了形成透明电极图案的区域之外的区域中的保护图案和栅极绝缘图案。

公开(公告)号：US20060285050A1

公开(公告)日：2006-12-21

申请号：US11256092

申请日：2005-10-24

申请人： Soon Yoo ,  Youn Chang ,  Heung Cho

发明人： Soon Yoo ,  Youn Chang ,  Heung Cho

IPC分类号： G02F1/1343

CPC分类号： G02F1/134363 ,  G02F2001/134372 ,  G02F2001/13629

摘要： A fringe field switching type thin film transistor substrate includes a double layered structure gate line; a data line crossing the gate line, wherein a gate insulating film is formed therebetween; a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode opposing the source electrode; a double layered structure common line parallel to the gate line; a common electrode plate integrated with the transparent conductive layer of the common line and formed in a pixel area defined by the crossing of the gate line and the data line; a pixel electrode slit covering the drain electrode of the thin film transistor and overlapping the common electrode plate, wherein the gate insulating film is formed therebetween in the pixel area; and a data protection pattern covering the data line and the source electrode.

摘要翻译： 条纹场开关型薄膜晶体管基板包括双层结构栅极线; 与栅极线交叉的数据线，其间形成有栅极绝缘膜; 薄膜晶体管，具有连接到栅极线的栅电极，连接到数据线的源电极和与源电极相对的漏电极; 平行于栅极线的双层结构公共线; 与公共线的透明导电层集成并形成在由栅极线与数据线的交叉限定的像素区域中的公共电极板; 覆盖所述薄膜晶体管的漏电极且与所述公共电极板重叠的像素电极狭缝，其中，在所述像素区域中形成所述栅极绝缘膜; 以及覆盖数据线和源电极的数据保护图案。

公开(公告)号：US20050099579A1

公开(公告)日：2005-05-12

申请号：US10981542

申请日：2004-11-05

申请人： Soon Yoo ,  Youn Chang ,  Heung Cho

发明人： Soon Yoo ,  Youn Chang ,  Heung Cho

IPC分类号： G02F1/136 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1362 ,  G02F1/1368 ,  G03F7/20 ,  H01L21/00 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L27/1288 ,  G02F1/133707 ,  G02F1/13394 ,  G02F1/13458 ,  G02F2001/136231 ,  H01L27/1214

摘要： A liquid crystal display (LCD) panel is fabricated in a simplified process. The LCD panel includes a thin film transistor (TFT) array substrate with a gate and data lines crossing each other to define a pixel area, a TFT at the crossings of the gate and data lines, a protective film, and a pixel electrode connected to the TFT and formed within a pixel opening that is arranged at the pixel area and formed through the protective film and a gate insulating film. A color filter array substrate is joined to the TFT array substrate. A pattern spacer is between the TFT and color filter array substrate and overlaps at least one of the gate line, the data line, and the thin film transistor. A rib is formed from the same layer as the pattern spacer and overlaps the pixel electrode. Liquid crystal material is provided within the LCD panel.

摘要翻译： 以简化的工艺制造液晶显示器（LCD）面板。 LCD面板包括薄膜晶体管（TFT）阵列基板，栅极和数据线彼此交叉以限定像素区域，在栅极和数据线的交叉处的TFT，保护膜和连接到 TFT形成在像素区域内，并形成在像素区域并形成在保护膜和栅极绝缘膜上的像素开口内。 滤色器阵列基板连接到TFT阵列基板。 图案间隔物位于TFT和滤色器阵列基板之间，并与栅极线，数据线和薄膜晶体管中的至少一个重叠。 肋由与图案间隔物相同的层形成，并与像素电极重叠。 液晶材料设置在LCD面板内。

公开(公告)号：US20060138422A1

公开(公告)日：2006-06-29

申请号：US11345370

申请日：2006-02-02

申请人： Byung Ahn ,  Oh Kwon ,  Heung Cho

发明人： Byung Ahn ,  Oh Kwon ,  Heung Cho

IPC分类号： H01L29/04

CPC分类号： H01L27/124 ,  G02F1/134363 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2001/136295 ,  H01L27/1288

摘要： A thin film transistor substrate of horizontal electric field type includes: a gate line and a first common line formed on a substrate to be in parallel to each other; a data line crossing the gate line and the first common line with a gate insulating film therebetween to define a pixel area; a second common line crossing the first common line having the gate insulating film therebetween; a thin film transistor connected to the gate line and the data line; a common electrode extending from the second common line in said pixel area; a pixel electrode that is parallel to the common electrode and the second common line; a protective film for covering the thin film transistor; a gate pad having a lower gate pad electrode connected to an upper gate pad electrode through a first contact hole; a common pad having a lower common pad electrode connected to an upper common pad electrode through a second contact hole; and a data pad having a lower data pad electrode connected to an upper data pad electrode provided within a third contact hole.

公开(公告)号：US20050078254A1

公开(公告)日：2005-04-14

申请号：US10960545

申请日：2004-10-08

申请人： Byoung Ho Lim ,  Soon Yoo ,  Youn Chang ,  Heung Cho

发明人： Byoung Ho Lim ,  Soon Yoo ,  Youn Chang ,  Heung Cho

IPC分类号： G02F1/1337 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/00 ,  H01L29/786

CPC分类号： G02F1/134336 ,  G02F1/133707

摘要： A thin film transistor array substrate for a liquid crystal display panel includes a gate line formed on a substrate. A data line crosses the gate line, thus defining a pixel region. A gate insulating film is positioned between the data line and the gate line. A thin film transistor is formed at a crossing of the gate line and the data line. A passivation film pattern exposes a portion of a drain electrode of the thin film transistor. At least one protrusion is provided to divide the pixel region into a plurality of regions, each of the regions having a different liquid crystal alignment from the other regions. A pixel electrode is connected to the thin film transistor to cover the pixel region excluding the passivation film pattern and the at least one protrusion.

摘要翻译： 用于液晶显示面板的薄膜晶体管阵列基板包括形成在基板上的栅极线。 数据线与栅极线交叉，从而限定像素区域。 栅极绝缘膜位于数据线和栅极线之间。 在栅极线和数据线的交叉处形成薄膜晶体管。 钝化膜图案暴露薄膜晶体管的漏电极的一部分。 提供至少一个突起以将像素区域划分成多个区域，每个区域与其他区域具有不同的液晶取向。 像素电极连接到薄膜晶体管以覆盖除了钝化膜图案和至少一个突起之外的像素区域。

公开(公告)号：US20050092991A1

公开(公告)日：2005-05-05

申请号：US10979096

申请日：2004-11-02

申请人： Byung Ahn ,  Oh Kwon ,  Heung Cho

发明人： Byung Ahn ,  Oh Kwon ,  Heung Cho

IPC分类号： G02F1/133 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G03F7/20 ,  H01L21/00 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L31/20

CPC分类号： H01L27/124 ,  G02F1/134363 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2001/136295 ,  H01L27/1288

摘要： A thin film transistor substrate of horizontal electric field type includes: a gate line and a first common line formed on a substrate to be in parallel to each other; a data line crossing the gate line and the first common line with a gate insulating film therebetween to define a pixel area; a second common line crossing the first common line having the gate insulating film therebetween; a thin film transistor connected to the gate line and the data line; a common electrode extending from the second common line in said pixel area; a pixel electrode that is parallel to the common electrode and the second common line; a protective film for covering the thin film transistor; a gate pad having a lower gate pad electrode connected to an upper gate pad electrode through a first contact hole; a common pad having a lower common pad electrode connected to an upper common pad electrode through a second contact hole; and a data pad having a lower data pad electrode connected to an upper data pad electrode provided within a third contact hole.

摘要翻译： 水平电场型薄膜晶体管基板包括：形成在彼此平行的基板上的栅极线和第一公共线; 跨越所述栅极线和所述第一公共线的数据线，其间具有栅极绝缘膜，以限定像素区域; 第二公共线与其间具有栅绝缘膜的第一公共线交叉; 连接到栅极线和数据线的薄膜晶体管; 在所述像素区域中从所述第二公共线延伸的公共电极; 平行于公共电极和第二公共线的像素电极; 用于覆盖薄膜晶体管的保护膜; 栅极焊盘，其具有通过第一接触孔连接到上部栅极焊盘电极的下部栅极焊盘电极; 公共焊盘，其具有通过第二接触孔连接到上公共焊盘电极的下公共焊盘电极; 以及数据焊盘，其具有连接到设置在第三接触孔内的上数据焊盘电极的下数据焊盘电极。

公开(公告)号：US20060274231A1

公开(公告)日：2006-12-07

申请号：US11208487

申请日：2005-08-19

申请人： Oh Kwon ,  Heung Cho ,  Seung Nam

发明人： Oh Kwon ,  Heung Cho ,  Seung Nam

IPC分类号： G02F1/1335

CPC分类号： G02F1/133516 ,  G02F1/133512

摘要： A color filter substrate for an LCD device and a method for manufacturing the same, in which process steps are simplified and the manufacturing cost is reduced. The color filter substrate for an LCD device includes a substrate defined by a plurality of color filter regions and a black matrix region, R, G and B color filters respectively formed in the color filter regions of the substrate, a trench formed in the black matrix region of the substrate at a predetermined depth, and a black matrix formed inside the trench by overlapping the color filters.

摘要翻译： 一种用于LCD装置的滤色器基板及其制造方法，其中简化了工艺步骤并降低了制造成本。 用于LCD装置的彩色滤光片基板包括由多个滤色器区域限定的基板和分别形成在基板的滤色器区域中的黑矩阵区域，R，G和B滤色器，形成在黑矩阵中的沟槽 区域，以及通过重叠滤色器而形成在沟槽内的黑色矩阵。

公开(公告)号：US20050046776A1

公开(公告)日：2005-03-03

申请号：US10962461

申请日：2004-10-13

申请人： Byung Ahn ,  Youn Chang ,  Heung Cho

发明人： Byung Ahn ,  Youn Chang ,  Heung Cho

IPC分类号： G02F1/1343 ,  G02F1/1362

CPC分类号： G02F1/1333 ,  G02F1/134363 ,  G02F1/13458 ,  G02F1/136227

摘要： A liquid crystal display (LCD) device of a horizontal electric field type is disclosed. The LCD device is fabricated by a three-mask process, and has gate pad, common pad and data pad electrodes, each including a upper electrode formed of a transparent conductive material. With a lift-off process, these upper electrodes are formed within contact holes.

摘要翻译： 公开了一种水平电场型液晶显示器（LCD）装置。 LCD装置由三掩模工艺制造，并具有栅极焊盘，公共焊盘和数据焊盘电极，每个包括由透明导电材料形成的上电极。 通过剥离处理，这些上部电极形成在接触孔内。

公开(公告)号：US20070056456A1

公开(公告)日：2007-03-15

申请号：US11474364

申请日：2006-06-26

申请人： Oh Kwon ,  Heung Cho ,  Seung Nam

发明人： Oh Kwon ,  Heung Cho ,  Seung Nam

IPC分类号： B41C3/08

CPC分类号： B41C1/02

摘要： A method for manufacturing a printing plate includes forming first trenches having a first depth into an insulative substrate, forming an organic film over the insulative substrate including the first trenches, and forming second trenches having a width smaller than that of the first trenches into the organic film, the second trenches formed at positions corresponding to the first trenches by selectively removing the organic film.

摘要翻译： 制造印版的方法包括：将具有第一深度的第一沟槽形成到绝缘基板中，在包括第一沟槽的绝缘基板上形成有机膜，并且形成宽度小于第一沟槽宽度的第二沟槽进入有机层 通过选择性地除去有机膜而形成在与第一沟槽对应的位置处的第二沟槽。

公开(公告)号：US20070164331A1

公开(公告)日：2007-07-19

申请号：US11713046

申请日：2007-03-02

申请人： Byung Aiin ,  Soon Yoo ,  Heung Cho

发明人： Byung Aiin ,  Soon Yoo ,  Heung Cho

IPC分类号： H01L31/113

CPC分类号： G02F1/136227 ,  G02F1/136213 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288

摘要： A thin film transistor (TFT) substrate is fabricated in three mask processes. In a first mask process, a gate line and a gate electrode are formed. In a second mask process, a data line, a source electrode, a drain electrode, a semiconductor layer, and a first upper storage electrode overlapping the gate line are formed from a gate insulating film, undoped and doped amorphous silicon layers, and a data metal layer. In a third mask process, a pixel hole is formed through protective and gate insulating films within and outside a pixel area, the first upper storage electrode is partially removed, a pixel electrode contacts a side of the drain electrode within the pixel hole at the pixel area, and a second upper storage electrode contacts a side of the first upper storage electrode in the pixel hole outside the pixel area.

摘要翻译： 在三个掩模工艺中制造薄膜晶体管（TFT）衬底。 在第一掩模工艺中，形成栅极线和栅电极。 在第二掩模处理中，从栅极绝缘膜，未掺杂和掺杂的非晶硅层形成数据线，源电极，漏极，半导体层和与栅极线重叠的第一上部存储电极，以及数据 金属层。 在第三掩模处理中，通过像素区域内和外部的保护栅极绝缘膜形成像素孔，部分地去除第一上部存储电极，像素电极在像素的像素孔内接触漏电极的一侧 并且第二上部存储电极接触像素区域外的像素孔中的第一上部存储电极的一侧。