公开(公告)号：US07902579B2

公开(公告)日：2011-03-08

申请号：US11505969

申请日：2006-08-18

申请人： Chee-kheng Lim ,  Eun-sik Kim ,  Yong-su Kim

发明人： Chee-kheng Lim ,  Eun-sik Kim ,  Yong-su Kim

IPC分类号： G11C11/02

CPC分类号： G11C11/15 ,  G11C11/5607 ,  G11C19/0808 ,  H01L27/228

摘要： A magnetic memory device includes a memory region, an input and a sensor. The memory region includes a free layer, a pinned layer and a non-magnetic layer. The free layer has adjacent sectors and a magnetic domain wall. The pinned layer corresponds to the sectors and has a fixed magnetization direction. The non-magnetic layer is formed between the free layer and the pinned layer. The memory region includes a magnetic domain wall stopper for stopping the magnetic domain wall formed at each boundary of the sectors. The input is electrically connected to one end of the free layer for inputting a signal for magnetic domain dragging. The sensor measures a current flowing through the memory region.

摘要翻译： 磁存储器件包括存储区域，输入端和传感器。 存储区包括自由层，钉扎层和非磁性层。 自由层具有相邻扇区和磁畴壁。 被钉扎层对应于扇区并且具有固定的磁化方向。 非磁性层形成在自由层和被钉扎层之间。 存储区域包括用于停止形成在扇区的每个边界处的磁畴壁的磁畴壁塞。 输入电连接到自由层的一端，用于输入用于磁畴拖动的信号。 传感器测量流过存储器区域的电流。

公开(公告)号：US07710756B2

公开(公告)日：2010-05-04

申请号：US11655927

申请日：2007-01-22

申请人： Chee-kheng Lim ,  Yong-su Kim

发明人： Chee-kheng Lim ,  Yong-su Kim

IPC分类号： G11C19/00

CPC分类号： G11C19/0808 ,  G11C11/14 ,  G11C19/0841 ,  Y10S977/933

摘要： A semiconductor device includes a magnetic wire having a plurality of magnetic domains, wherein the magnetic wire comprises a magnetic domain wall that is moved by either a pulse field or a pulse current. The magnetic wire of the semiconductor device does not require an additional notch since the magnetic wire includes a magnetic domain wall, the moving distance of which is controlled by a pulse field or a pulse current.

摘要翻译： 半导体器件包括具有多个磁畴的磁线，其中，所述磁线包括通过脉冲场或脉冲电流移动的磁畴壁。 半导体器件的磁线不需要额外的凹口，因为磁线包括磁畴壁，其移动距离由脉冲场或脉冲电流控制。

公开(公告)号：US07684233B2

公开(公告)日：2010-03-23

申请号：US11347228

申请日：2006-02-06

申请人： Chee-kheng Lim ,  Yong-su Kim

发明人： Chee-kheng Lim ,  Yong-su Kim

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/16 ,  G11C11/5607 ,  H01L27/228

摘要： A multi-bit magnetic memory device using a spin-polarized current and methods of manufacturing and operating the same. The magnetic memory device includes a switching device and a magnetic storage node connected to the switching device, wherein the magnetic storage node includes a first magnetic layer, a second magnetic layer and a free magnetic layer which are vertically and separately disposed from one another. The first and second magnetic layer have transmission characteristics opposite to each other for spin-polarized electrons, and have magnetic polarizations that are opposite to each other. The free magnetic layer may include first and second free magnetic layers, which are separately disposed from each other. The magnetic storage node may further include third and fourth magnetic layers that are separately disposed between the first and second free magnetic layers.

摘要翻译： 使用自旋极化电流的多位磁存储器件及其制造和操作方法。 磁存储器件包括连接到开关器件的开关器件和磁存储节点，其中磁存储节点包括彼此垂直且分开设置的第一磁性层，第二磁性层和自由磁性层。 第一和第二磁性层对于自旋极化电子具有彼此相反的传输特性，并且具有彼此相反的磁极化。 自由磁性层可以包括彼此分开设置的第一和第二自由磁性层。 磁存储节点还可以包括分开设置在第一和第二自由磁性层之间的第三和第四磁性层。

公开(公告)号：US07486478B2

公开(公告)日：2009-02-03

申请号：US11247305

申请日：2005-10-12

申请人： Chee-kheng Lim ,  Yong-su Kim

发明人： Chee-kheng Lim ,  Yong-su Kim

IPC分类号： G11B5/147

CPC分类号： G11B5/3116 ,  G11B5/3143

摘要： Provided is a magnetic head having a magnetic thin film structure that reduces the effect of a stray field and generates a magnetization reversal at a high speed. The magnetic head includes a first pole, a second pole spaced apart from the first pole, and an induction coil that induces a magnetic field in the first and second poles, wherein the first and second poles include a pole tip in which a leakage flux for recording is generated, and a head yoke that guides the flux flowing in the poles, and at least one implant for controlling a magnetic domain, the implant formed in at least one of the first and second poles. The magnetic thin film can effectively reduce the effect of a stray field entering from the outside, and can control a domain wall motion so that high speed magnetic recording is possible, by generating a magnetization reversal at a high speed corresponding to a magnetic field applied by an induction coil.

摘要翻译： 本发明提供一种具有磁性薄膜结构的磁头，其能够降低杂散磁场的影响并产生高速的磁化反转。 磁头包括第一极，与第一极分开的第二极和感应线圈，其在第一和第二极中引起磁场，其中第一和第二极包括极尖，其中漏极通量用于 产生记录，以及引导磁极在磁极中流动的磁头磁轭，以及用于控制磁畴的至少一个注入，形成在第一和第二磁极中的至少一个上的注入。 磁性薄膜可以有效地降低从外部进入的杂散场的影响，并且可以控制畴壁运动，从而可以通过相应于由磁场施加的磁场产生高速磁化反转，从而实现高速磁记录 感应线圈。

公开(公告)号：US20060256473A1

公开(公告)日：2006-11-16

申请号：US11413000

申请日：2006-04-28

申请人： Chee-kheng Lim ,  Yong-su Kim ,  Hoo-san Lee

发明人： Chee-kheng Lim ,  Yong-su Kim ,  Hoo-san Lee

IPC分类号： G11B5/147

CPC分类号： G11B5/1278 ,  G11B5/11

摘要： A perpendicular magnetic recording head including: a data recording module comprising a main pole, a return pole, and a coil wrapped around the main pole; and a data reproduction module including magnetic shield layers and a reading device located between the magnetic shield layers, wherein the width of a lower end of the main pole is gradually reduced in a downward direction thereof, and the lower end of the main pole comprises a first part and a second part extending from the first part, the first part having a curved surface of a first curvature and the second part having a curved surface of a second curvature. The first curvature can be equal to or different from the second curvature, and magnetic shield devices can be further disposed on both sides of the lower end of the main pole.

摘要翻译： 一种垂直磁记录头，包括：数据记录模块，包括主极，返回极和缠绕在主极上的线圈; 以及包括磁屏蔽层和位于磁屏蔽层之间的读取装置的数据再现模块，其中主极的下端的宽度在其向下的方向上逐渐减小，并且主极的下端包括 第一部分和第二部分从第一部分延伸，第一部分具有第一曲率的曲面，第二部分具有第二曲率的曲面。 第一曲率可以等于或不同于第二曲率，并且磁屏蔽装置可以进一步设置在主极的下端的两侧。

公开(公告)号：US08349527B2

公开(公告)日：2013-01-08

申请号：US13113534

申请日：2011-05-23

申请人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

发明人： Hae-sung Kim ,  Hyoung-soo Ko ,  Seung-bum Hong ,  Jin-seung Sohn ,  Sung-hoon Choa ,  Chee-kheng Lim

IPC分类号： G03F1/00

CPC分类号： G03F1/14 ,  B29C59/002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24917

摘要： A nano imprint master and a method of manufacturing the same are provided. The method includes: implanting conductive metal ions into a substrate including quartz to form a conductive layer inside the quartz substrate; coating a resist on the quartz substrate in which the conductive layer is formed, to form a resist coating layer; exposing the resist coating layer to an electron beam to form micropatterns; etching the quartz substrate by using the resist coating layer, in which the micropatterns are formed, as a mask; and removing the resist coating layer to obtain a master in which micropatterns are formed.

摘要翻译： 提供了纳米压印母版及其制造方法。 该方法包括：将导电金属离子注入包括石英的衬底中，以在石英衬底内形成导电层; 在其上形成导电层的石英基板上涂覆抗蚀剂，以形成抗蚀剂涂层; 将抗蚀剂涂层暴露于电子束以形成微图案; 通过使用其中形成有微图案的抗蚀剂涂层作为掩模来蚀刻石英基板; 并除去抗蚀剂涂层以获得形成微图案的母版。

公开(公告)号：US07652906B2

公开(公告)日：2010-01-26

申请号：US11851049

申请日：2007-09-06

申请人： Chee-kheng Lim ,  Eun-sik Kim ,  Sung-chul Lee

发明人： Chee-kheng Lim ,  Eun-sik Kim ,  Sung-chul Lee

IPC分类号： G11C19/00

CPC分类号： G11C11/14 ,  G11C19/0808 ,  G11C19/0816 ,  G11C19/0841 ,  Y10S977/933

摘要： Provided is a memory device employing magnetic domain wall movement. The memory device includes a first track, an interconnecting layer, and a second track. The first track including a magnetic material is formed in a first direction. The interconnecting layer is formed on the first track. The second track including a magnetic material is formed in a second direction on the interconnecting layer.

摘要翻译： 提供了采用磁畴壁运动的存储器件。 存储器件包括第一轨道，互连层和第二轨道。 包括磁性材料的第一轨迹形成在第一方向上。 互连层形成在第一轨道上。 包括磁性材料的第二轨道在互连层上沿第二方向形成。

公开(公告)号：US20080144217A1

公开(公告)日：2008-06-19

申请号：US11861348

申请日：2007-09-26

申请人： Myung-bok LEE ,  Jin-seung Sohn ,  Chee-kheng Lim

发明人： Myung-bok LEE ,  Jin-seung Sohn ,  Chee-kheng Lim

IPC分类号： G11B5/74 ,  G11B23/00

CPC分类号： G11B5/82 ,  B82Y10/00 ,  G11B5/656 ,  G11B5/66 ,  G11B5/743 ,  G11B5/855 ,  G11B5/858

摘要： Provided are a patterned magnetic recording medium and a method of manufacturing the same. The patterned magnetic recording medium include: a substrate; and a plurality of magnetic recording layers arranged at predetermined intervals, wherein the magnetic recording layers are formed of an alloy including Co, Pt, and Ni. The patterned medium having the magnetic recording layers have an excellent read/write characteristic and high corrosion resistance and recording density.

摘要翻译： 提供图案化的磁记录介质及其制造方法。 图案化的磁记录介质包括：基底; 以及以预定间隔布置的多个磁记录层，其中磁记录层由包括Co，Pt和Ni的合金形成。 具有磁记录层的图案化介质具有优异的读/写特性和高耐蚀性和记录密度。

公开(公告)号：US08231987B2

公开(公告)日：2012-07-31

申请号：US12000243

申请日：2007-12-11

申请人： Chee-kheng Lim

发明人： Chee-kheng Lim

IPC分类号： G11B5/66

CPC分类号： G11C19/0808 ,  G11C11/14

摘要： Example embodiments may provide data storage devices using movement of magnetic domain walls including a first magnetic layer having at least two magnetic domains with determinable magnetization directions, and/or a soft second magnetic layer formed on a lower surface of the first magnetic layer. Magnetic domain walls may be moved even in curved regions of the first magnetic layer.

摘要翻译： 示例性实施例可以使用包括具有至少两个具有可确定的磁化方向的磁畴的第一磁性层和/或形成在第一磁性层的下表面上的软的第二磁性层的磁畴壁的移动来提供数据存储装置。 即使在第一磁性层的弯曲区域中，也可以移动磁畴壁。

公开(公告)号：US08054666B2

公开(公告)日：2011-11-08

申请号：US11980553

申请日：2007-10-31

申请人： Chee-kheng Lim

发明人： Chee-kheng Lim

IPC分类号： G11C19/00

CPC分类号： G11C11/14 ,  G11C19/0808 ,  Y10S977/933 ,  Y10S977/935

摘要： In an information storage device, a writing magnetic layer is formed on a substrate and has a magnetic domain wall. A connecting magnetic layer is formed on the writing magnetic layer, and an information storing magnetic layer is formed on an upper portion of side surfaces of the connecting magnetic layer. A reader reads information stored in the information storing magnetic layer.

摘要翻译： 在信息存储装置中，写入磁性层形成在基板上并具有磁畴壁。 在写入磁性层上形成连接磁性层，在连接磁性层的侧面上部形成信息存储磁性层。 读取器读取存储在信息存储磁性层中的信息。