公开(公告)号：US20050189499A1

公开(公告)日：2005-09-01

申请号：US11119061

申请日：2005-04-28

Applicant: Burn Lin

Inventor： Burn Lin

IPC: G03F7/20 ,  G21G5/00 ,  A61N5/00

CPC classification number: G03F7/7065 ,  G03F7/2051 ,  G03F7/70383 ,  G03F7/70675

Abstract: A method and an apparatus for repairing resist latent image on a wafer are disclosed. In the method, an image scanner equipped with a first and a second wafer carrier, and a primary imaging column and a secondary imaging column is utilized to conduct the processes of imaging a resist latent image on a first wafer and repairing a defect in a resist latent image on a second wafer positioned on a second wafer carrier simultaneously. The primary imaging column and the secondary imaging column may be situated in the same vacuum chamber to facilitate operation.

公开(公告)号：US20050100745A1

公开(公告)日：2005-05-12

申请号：US10702664

申请日：2003-11-06

Applicant: Burn Lin ,  David Lu

Inventor： Burn Lin ,  David Lu

IPC: B32B9/00 ,  B32B9/04 ,  G02B1/10 ,  G02B13/14 ,  G03F7/00 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F7/70983 ,  G02B1/105 ,  G02B1/111 ,  G02B1/113 ,  G02B1/115 ,  G02B1/14 ,  G02B13/143 ,  G03F7/70341

Abstract: Disclosed is an objective lens adapted for use in liquid immersion photolithography and a method for making such a lens. In one example, the objective lens has multiple lens elements, one of which includes a transparent substrate and a layer of anti-corrosion coating (ACC). The ACC is formed proximate to the transparent substrate and is positioned between a liquid used during the liquid immersion photolithography and the transparent substrate to protect the transparent substrate from the liquid.

Abstract translation: 公开了适用于液浸光刻的物镜和制造这种透镜的方法。 在一个示例中，物镜具有多个透镜元件，其中之一包括透明基板和一层防腐涂层（ACC）。 ACC形成在透明基板附近，并且位于液浸光刻期间使用的液体和透明基板之间，以保护透明基板免于液体。

公开(公告)号：US20050046816A1

公开(公告)日：2005-03-03

申请号：US10965421

申请日：2004-10-14

Applicant: Burn Lin

Inventor： Burn Lin

IPC: G03F7/20 ,  G03F9/00 ,  G03B27/42

CPC classification number: G03F7/70283 ,  G03F7/70358 ,  G03F7/70466 ,  G03F9/7076

Abstract: A new optical lithographic exposure apparatus is described. The apparatus may comprise, for example, a lithographic stepper or scanner. A wafer stage comprises a means of supporting a semiconductor wafer. A mask stage comprises a means of holding a first mask and a second mask and maintaining a fixed relative position between the first mask and the second mask. The mask stage may further comprise an independent means of aligning each mask. A light source comprises a means to selectively shine actinic light through one of the first mask and the second mask. An imaging lens is capable of focusing the actinic light onto the semiconductor wafer. A step and scan method using the mask stage is provided. A first mask and a second mask are loaded into a mask stage of an optical lithographic exposure apparatus. The first mask and the second mask are aligned. The first mask is scanned. The wafer is then stepped. The second mask is scanned. By repeating this sequence across the wafer twice, the patterns of the first mask and the second mask are thereby superimposed in every field. The photoresist layer is developed to thereby create the patterning in the manufacture of the integrated circuit device.